SWITCHMODEt Power Supplies

Reference Manual and Design Guide

SMPSRM/D
Rev. 3B, July-2002

SCILLC, 2007
Previous Edition 2002
All Rights Reserved''

SMPSRM

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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SMPSRM

Forward
Every new electronic product, except those that are battery powered, requires converting off-line
115 Vac or 230 Vac power to some dc voltage for powering the electronics. The availability of design
and application information and highly integrated semiconductor control ICs for switching power
supplies allows the designer to complete this portion of the system design quickly and easily.
Whether you are an experienced power supply designer, designing your first switching power
supply or responsible for a make or buy decision for power supplies, the variety of information
in the SWITCHMODE Power Supplies Reference Manual and Design Guide should prove
useful.
ON Semiconductor has been a key supplier of semiconductor products for switching power supplies
since we introduced bipolar power transistors and rectifiers designed specifically for switching
power supplies in the mid-70's. We identified these as SWITCHMODE products. A switching
power supply designed using ON Semiconductor components can rightfully be called a
SWITCHMODE power supply or SMPS.
This brochure contains useful background information on switching power supplies for those who
want to have more meaningful discussions and are not necessarily experts on power supplies. It also
provides real SMPS examples, and identifies several application notes and additional design
resources available from ON Semiconductor, as well as helpful books available from various
publishers and useful web sites for those who are experts and want to increase their expertise. An
extensive list and brief description of analog ICs, power transistors, rectifiers and other discrete
components available from ON Semiconductor for designing a SMPS are also provided. This
includes our newest GreenLine, Easy Switcher and very high voltage ICs (VHVICs), as well as
high efficiency HDTMOS and HVTMOS power FETs, and a wide choice of discrete products
in surface mount packages.
For the latest updates and additional information on analog and discrete products for power supply and
power management applications, please visit our website: (www.onsemi.com).

MEGAHERTZ, POWERTAP, SENSEFET, SWITCHMODE, and TMOS are trademarks of Semiconductor Components Industries,
LLC. HDTMOS and HVTMOS are registered trademarks of Semiconductor Components Industries, LLC.
GreenLine, SMARTMOS and Motorola are trademarks of Motorola Inc.

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SMPSRM

Table of Contents
Page

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Linear versus Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Switching Power Supply Fundamentals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
The Forward-Mode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
The Flyback-Mode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Common Switching Power Supply Topologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Interleaved Multiphase Converters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Selecting the Method of Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
The Choice of Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Power Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
The Bipolar Power Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
The Power MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Driving MOSFETs in Switching Power Supply Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
The Insulated Gate Bipolar Transistor (IGBT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
The Magnetic Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Laying Out the Printed Circuit Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Losses and Stresses in Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Techniques to Improve Efficiency in Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
The Synchronous Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Snubbers and Clamps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
The Lossless Snubber . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
The Active Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Quasi-Resonant Topologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Power Factor Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
SMPS Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Integrated Circuits for Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Suggested Components for Specific Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Literature Available from ON Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Notes, Brochures, Device Data Books and Device Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
References for Switching Power Supply Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Books . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Websites . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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56
58
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SMPSRM

Introduction

A low drop-out (LDO) regulator uses an improved

output stage that can reduce Vdrop to considerably less
than 1.0 V. This increases the efficiency and allows the
linear regulator to be used in higher power applications.
Designing with a linear regulator is simple and cheap,
requiring few external components. A linear design is
considerably quieter than a switcher since there is no
high-frequency switching noise.
Switching power supplies operate by rapidly switching
the pass units between two efficient operating states:
cutoff, where there is a high voltage across the pass unit
but no current flow; and saturation, where there is a high
current through the pass unit but at a very small voltage
drop. Essentially, the semiconductor power switch
creates an AC voltage from the input DC voltage. This
AC voltage can then be stepped-up or down by
transformers and then finally filtered back to DC at its
output. Switching power supplies are much more
efficient, ranging from 65 to 95 percent.
The downside of a switching design is that it is
considerably more complex. In addition, the output
voltage contains switching noise, which must be
removed for many applications.
Although there are clear differences between linear
and switching regulators, many applications require both
types to be used. For example, a switching regulator may
provide the initial regulation, then a linear regulator may
provide post-regulation for a noise-sensitive part of the
design, such as a sensor interface circuit.

The never-ending drive towards smaller and lighter

products poses severe challenges for the power supply
designer. In particular, disposing of excess heat
generated by power semiconductors is becoming more
and more difficult. Consequently it is important that the
power supply be as small and as efficient as possible, and
over the years power supply engineers have responded to
these challenges by steadily reducing the size and
improving the efficiency of their designs.
Switching power supplies offer not only higher
efficiencies but also greater flexibility to the designer.
Recent advances in semiconductor, magnetic and passive
technologies make the switching power supply an ever
more popular choice in the power conversion arena.
This guide is designed to give the prospective designer
an overview of the issues involved in designing
switchmode power supplies. It describes the basic
operation of the more popular topologies of switching
power supplies, their relevant parameters, provides
circuit design tips, and information on how to select the
most appropriate semiconductor and passive
components. The guide also lists the ON Semiconductor
components expressly built for use in switching power
supplies.

Linear versus Switching

Power Supplies
Switching and linear regulators use fundamentally
different techniques to produce a regulated output
voltage from an unregulated input. Each technique has
advantages and disadvantages, so the application will
determine the most suitable choice.
Linear power supplies can only step-down an input
voltage to produce a lower output voltage. This is done
by operating a bipolar transistor or MOSFET pass unit in
its linear operating mode; that is, the drive to the pass unit
is proportionally changed to maintain the required output
voltage. Operating in this mode means that there is
always a headroom voltage, Vdrop, between the input
and the output. Consequently the regulator dissipates a
considerable amount of power, given by (Vdrop Iload).
This headroom loss causes the linear regulator to only
be 35 to 65 percent efficient. For example, if a 5.0 V
regulator has a 12 V input and is supplying 100 mA, it
must dissipate 700 mW in the regulator in order to deliver
500 mW to the load , an efficiency of only 42 percent.
The cost of the heatsink actually makes the linear
regulator uneconomical above 10 watts for small
applications. Below that point, however, linear
regulators are cost-effective in step-down applications.

Switching Power Supply

Fundamentals
There are two basic types of pulse-width modulated
(PWM) switching power supplies, forward-mode and
boost-mode. They differ in the way the magnetic
elements are operated. Each basic type has its advantages
and disadvantages.
The Forward-Mode Converter
The forward-mode converter can be recognized by the
presence of an L-C filter on its output. The L-C filter
creates a DC output voltage, which is essentially the
volt-time average of the L-C filter's input AC
rectangular waveform. This can be expressed as:
Vout  Vin  dutycycle

(eq. 1)

The switching power supply controller varies the duty

cycle of the input rectangular voltage waveform and thus
controls the signal's volt-time average.
The buck or step-down converter is the simplest
forward-mode converter, which is shown in Figure 1.

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SMPSRM
LO

SW

Ion

INDUCTOR CURRENT
(AMPS)

DIODE VOLTAGE
(VOLTS)

Vin

Ioff

Cout

Rload

Vsat

Power
Switch
ON

Power
Switch
OFF

Power
Switch
ON

Power
Switch
OFF
TIME

Vfwd

Ipk
Iload
Imin
Power SW

Diode

Power SW

Diode
TIME

Figure 1. A Basic Forward-Mode Converter and Waveforms (Buck Converter Shown)

Its operation can be better understood when it is broken

into two time periods: when the power switch is turned
on and turned off. When the power switch is turned on,
the input voltage is directly connected to the input of the
L-C filter. Assuming that the converter is in a
steady-state, there is the output voltage on the filter's
output. The inductor current begins a linear ramp from an
initial current dictated by the remaining flux in the
inductor. The inductor current is given by:
iL(on) 

(Vin  Vout)
t  iinit
0  t  ton
L

clamped when the catch diode D becomes forward

biased. The stored energy then continues flowing to the
output through the catch diode and the inductor. The
inductor current decreases from an initial value ipk and is
given by:
V t
iL(off)  ipk  out 

0  t  toff
L

(eq. 3)

The off period continues until the controller turns the

power switch back on and the cycle repeats itself.
The buck converter is capable of over one kilowatt of
output power, but is typically used for on-board regulator
applications whose output powers are less than 100 watts.
Compared to the flyback-mode converter, the forward
converter exhibits lower output peak-to-peak ripple
voltage. The disadvantage is that it is a step-down
topology only. Since it is not an isolated topology, for
safety reasons the forward converter cannot be used for
input voltages greater than 42.5 VDC.

(eq. 2)

During this period, energy is stored as magnetic flux

within the core of the inductor. When the power switch
is turned off, the core contains enough energy to supply
the load during the following off period plus some
reserve energy.
When the power switch turns off, the voltage on the
input side of the inductor tries to fly below ground, but is

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SMPSRM
The Flyback-Mode Converter
The basic flyback-mode converter uses the same
components as the basic forward-mode converter, but in
a different configuration. Consequently, it operates in a

different fashion from the forward-mode converter. The

most elementary flyback-mode converter, the boost or
step-up converter, is shown in Figure 2.

L
D

Cout
Vin

SW
Ion

Ioff

Iload

Rload

SWITCH VOLTAGE
(VOLTS)

Vin
Vflbk
(Vout)

Power
Switch
ON

Vsat

Power
Switch
ON

Diode
ON

Power
Switch
ON

Diode
ON

INDUCTOR CURRENT
(AMPS)

TIME

Ipk

Iload
TIME

Figure 2. A Basic Boost-Mode Converter and Waveforms (Boost Converter Shown)

Again, its operation is best understood by considering the

on and off periods separately. When the power
switch is turned on, the inductor is connected directly
across the input voltage source. The inductor current then
rises from zero and is given by:
V t
iL(on)  in 


 t  0on
L

the output rectifier when its voltage exceeds the output

voltage. The energy within the core of the inductor is then
passed to the output capacitor. The inductor current
during the off period has a negative ramp whose slope is
given by:

(eq. 4)

iL(off) 

Energy is stored within the flux in the core of the inductor.

The peak current, ipk , occurs at the instant the power
switch is turned off and is given by:
V t
ipk  in on
L

(Vin  Vout)
L

(eq. 6)

The energy is then completely emptied into the output

capacitor and the switched terminal of the inductor falls
back to the level of the input voltage. Some ringing is
evident during this time due to residual energy flowing
through parasitic elements such as the stray inductances
and capacitances in the circuit.

(eq. 5)

When the power switch turns off, the switched side of

the inductor wants to fly-up in voltage, but is clamped by

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SMPSRM
When there is some residual energy permitted to
remain within the inductor core, the operation is called
continuous- mode. This can be seen in Figure 3.
Energy for the entire on and off time periods must be
stored within the inductor. The stored energy is defined
by:
EL  0.5L  ipk2

to a 50 percent duty cycle. There must be a time period

when the inductor is permitted to empty itself of its
energy.
The boost converter is used for board-level (i.e.,
non-isolated) step-up applications and is limited to less
than 100-150 watts due to high peak currents. Being a
non-isolated converter, it is limited to input voltages of
less than 42.5 VDC. Replacing the inductor with a
transformer results in a flyback converter, which may be
step-up or step-down. The transformer also provides
dielectric isolation from input to output.

(eq. 7)

SWITCH VOLTAGE
(VOLTS)

The boost-mode inductor must store enough energy to

supply the output load for the entire switching period (ton
+ toff). Also, boost-mode converters are typically limited

Vflbk
(Vout)
Vin
Power
Switch
ON

Power
Switch
ON

Diode
ON

Diode
ON

INDUCTOR CURRENT
(AMPS)

TIME
Vsat
Ipk

TIME

Figure 3. Waveforms for a Continuous-Mode Boost Converter

Common Switching
Power Supply Topologies

5. How much of the input voltage is placed across

the primary transformer winding or inductor?
Factor 1 is a safety-related issue. Input voltages above
42.5 VDC are considered hazardous by the safety
regulatory agencies throughout the world. Therefore,
only transformer-isolated topologies must be used above
this voltage. These are the off-line applications where the
power supply is plugged into an AC source such as a wall
socket.
Multiple outputs require a transformer-based
topology. The input and output grounds may be
connected together if the input voltage is below
42.5 VDC. Otherwise full dielectric isolation is required.

A topology is the arrangement of the power devices

and their magnetic elements. Each topology has its own
merits within certain applications. There are five major
factors to consider when selecting a topology for a
particular application. These are:
1. Is input-to-output dielectric isolation required for
the application? This is typically dictated by the
safety regulatory bodies in effect in the region.
2. Are multiple outputs required?
3. Does the prospective topology place a reasonable
voltage stress across the power semiconductors?
4. Does the prospective topology place a reasonable
current stress upon the power semiconductors?

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SMPSRM
Factors 3, 4 and 5 have a direct affect upon the
reliability of the system. Switching power supplies
deliver constant power to the output load. This power is
then reflected back to the input, so at low input voltages,
the input current must be high to maintain the output
power. Conversely, the higher the input voltage, the
lower the input current. The design goal is to place as
much as possible of the input voltage across the
transformer or inductor so as to minimize the input
current.
Boost-mode topologies have peak currents that are
about twice those found in forward-mode topologies.
This makes them unusable at output powers greater than
100-150 watts.

Cost is a major factor that enters into the topology

decision. There are large overlaps in the performance
boundaries between the topologies. Sometimes the most
cost-effective choice is to purposely design one topology
to operate in a region that usually is performed by
another. This, though, may affect the reliability of the
desired topology.
Figure 4 shows where the common topologies are used
for a given level of DC input voltage and required output
power. Figures 5 through 12 show the common
topologies. There are more topologies than shown, such
as the Sepic and the Cuk, but they are not commonly
used.

1000

DC INPUT VOLTAGE (V)

Half-Bridge

100

Flyback

Full-Bridge

42.5
Non-Isolated
10

Full-Bridge
Very High

Buck

Peak Currents

10

100

1000

OUTPUT POWER (W)

Figure 4. Where Various Topologies Are Used

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SMPSRM
L
+

+
D
Vin

Cin

VFWD

VD

Power Switch

IPK

Vout

+
Cout

Control

TIME

Vin

IL

Feedback

TIME

ILOAD

IMIN

Figure 5. The Buck (Step-Down) Converter

VFLBK

+
+

SW

Control

D
ON
SW ON

Cin

Vin

D
ON

VSAT

VSW

TIME
Vin

Vout

Cout

IPK

IL
-

ISW

ID

TIME

Figure 6. The Boost (Step-Up) Converter

Vin
VL

Control

TIME

SW
D

Vin

Cin

L
-

-Vout

Vout

Cout

Feedback

IL
ISW

ID

TIME

IPK

Figure 7. The Buck-Boost (Inverting) Converter

VFLBK

VSAT

SW
ON

VSW

TIME

0
+

Vin

D
N1

Cin
Control

Vin

N2

+
Cout

+
Vout

IPRI
0

SW

IPK

TIME

ISEC
Feedback

Figure 8. The Flyback Converter

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TIME

SMPSRM
+

LO

+
+

N2

N1

Vout

Cout

Cin

Vin

SW

Control
-

Feedback

SW
ON

VSW

TIME

0
VSAT

2Vin

IPRI
0

TIME
IMIN

IPK

Figure 9. The One-Transistor Forward Converter (Half Forward Converter)

SW1

D1

LO
+

D2

Cout

SW2
Vin
Cin

Control

Feedback

2Vin
SW2

Vin
VSW

SW1
TIME

0
VSAT
IPK

IPRI

Vout

TIME
IMIN

Figure 10. The Push-Pull Converter

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SMPSRM
LO
+

Ds
+
Cout

Vout
-

+
N2

XFMR
SW1

Cin
Control

Vin

N1

SW2

C
C

Feedback
Vin
SW1

V in
2
SW2

VSW2 0

TIME
VSAT
IPK

IPRI
TIME

0
IMIN

Figure 11. The Half-Bridge Converter

LO
Ds

+
Cout

+
Vout
-

+
XFMR

N2

SW1

Cin
Vin

N1

Control

SW3

XFMR

C
SW4

SW2
-

Vin
SW
V in
2

14

SW
23

VSW2 0

TIME
VSAT
IPK

ISW2
0

TIME
IMIN

Figure 12. The Full-Bridge Converter

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SMPSRM

Interleaved Multiphase Converters

The input and output capacitors are shared among the

phases. The input capacitor sees less RMS ripple current
because the peak currents are less and the combined duty
cycle of the phases is greater than it would experience
with a single phase converter. The output capacitor can
be made smaller because the frequency of current
waveform is n-times higher and its combined duty cycle
is greater. The semiconductors also see less current
stress.
A block diagram of an interleaved multiphase buck
converter is shown in Figure 13. This is a 2-phase
topology that is useful in providing power to a high
performance microprocessor.

One method of increasing the output power of any

topology and reducing the stresses upon the
semiconductors, is a technique called interleaving. Any
topology can be interleaved. An interleaved multiphase
converter has two or more identical converters placed in
parallel which share key components. For an n-phase
converter, each converter is driven at a phase difference
of 360/n degrees from the next. The output current from
all the phases sum together at the output, requiring only
Iout/n amperes from each phase.

+
+

VIN

CIN

SA1

SA2

VFDBK
Control

LA

GATEA1
GATEA2

+
+

GND
CFA
CFB

COUT

GATEB2
GATEB1

SB1

CS5308

LB

SB2

Current Feedback A
Current Feedback B
Voltage Feedback

Figure 13. Example of a Two-Phase Buck Converter with Voltage and Current Feedback

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13

VOUT
-

SMPSRM

Selecting the Method of Control

select the one that is wanted.

Table 1 summarizes the features of each of the popular
methods of control. Certain methods are better adapted to
certain topologies due to reasons of stability or transient
response.

There are three major methods of controlling a

switching power supply. There are also variations of
these control methods that provide additional protection
features. One should review these methods carefully and
then carefully review the controller IC data sheets to
Table 1. Common Control Methods Used in ICs
Control Method
Voltage-Mode

Current-Mode
Hysteric Voltage

OC Protection

Response Time

Preferred Topologies

Average OC

Slow

Forward-Mode

Pulse-by-Pulse OC

Slow

Forward-Mode

Intrinsic

Rapid

Boost-Mode

Hysteretic

Rapid

Boost & Forward-Mode

Average

Slow

Boost & Forward-Mode

Voltage-mode control (see Figure 14) is typically used

for forward-mode topologies. In voltage-mode control,
only the output voltage is monitored. A voltage error
signal is calculated by forming the difference between
Vout (actual) and Vout(desired). This error signal is then
fed into a comparator that compares it to the ramp voltage
generated by the internal oscillator section of the control
IC. The comparator thus converts the voltage error signal
into the PWM drive signal to the power switch. Since the
only control parameter is the output voltage, and there is
inherent delay through the power circuit, voltage-mode
control tends to respond slowly to input variations.
Overcurrent protection for a voltage-mode controlled
converter can either be based on the average output
current or use a pulse-by-pulse method. In average
overcurrent protection, the DC output current is
monitored, and if a threshold is exceeded, the pulse width
of the power switch is reduced. In pulse-by-pulse
overcurrent protection, the peak current of each power
switch on cycle is monitored and the power switch is

instantly cutoff if its limits are exceeded. This offers

better protection to the power switch.
Current-mode control (see Figure 15) is typically used
with boost-mode converters. Current-mode control
monitors not only the output voltage, but also the output
current. Here the voltage error signal is used to control
the peak current within the magnetic elements during
each power switch on-time. Current-mode control has a
very rapid input and output response time, and has an
inherent overcurrent protection. It is not commonly used
for forward-mode converters; their current waveforms
have much lower slopes in their current waveforms
which can create jitter within comparators.
Hysteretic control is a method of control which tries to
keep a monitored parameter between two limits. There
are hysteretic current and voltage control methods, but
they are not commonly used.
The designer should be very careful when reviewing a
prospective control IC data sheet. The method of control
and any variations are usually not clearly described on
the first page of the data sheet.

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SMPSRM
VCC

OSC

Charge
Clock Ramp
Verror
Discharge

Ct

Volt
Comp.
VFB

+
-

+
+

Pulsewidth
Comparator

Vref

Steering
Average
Overcurrent
Protection

Cur.
Comp.
Iout (lavOC)
or
ISW (P-POC)

Output
Gating
Logic

Verror Amp.

Current Amp.
+

RCS

Pulse-by-Pulse
Overcurrent
Protection

+
VOC

VSS

Figure 14. Voltage-Mode Control

VCC

OSC

Ct

Discharge

Volt
Comp.

Output
Gating
Logic
S

Verror Amp.

VFB

Verror

Output

+
-

Vref

Current
Comparator

+
ISW

Verror

RCS
VSS

Ipk
ISW

Figure 15. Turn-On with Clock Current-Mode Control

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SMPSRM

The Choice of Semiconductors

One should generate a gate drive voltage that is as close

to 0.7 volts as possible. This is to minimize any loss
created by dropping the base drive voltage at the required
base current to the level exhibited by the base.
A second consideration is the storage time exhibited by
the collector during its turn-off transition. When the base
is overdriven, or where the base current is more than
needed to sustain the collector current, the collector
exhibits a 0.3-2 s delay in its turn-off which is
proportional to the base overdrive. Although the storage
time is not a major source of loss, it does significantly
limit the maximum switching frequency of a
bipolar-based switching power supply. There are two
methods of reducing the storage time and increasing its
switching time. The first is to use a base speed-up
capacitor whose value, typically around 100 pF, is placed
in parallel with the base current limiting resistor
(Figure 16a). The second is to use proportional base drive
(Figure 16b). Here, only the amount of needed base
current is provided by the drive circuit by bleeding the
excess around the base into the collector.
The last consideration with BJTs is the risk of
excessive second breakdown. This phenomenon is
caused by the resistance of the base across the die,
permitting the furthest portions of the collector to turn off
later. This forces the current being forced through the
collector by an inductive load, to concentrate at the
opposite ends of the die, thus causing an excessive
localized heating on the die. This can result in a
short-circuit failure of the BJT which can happen
instantaneously if the amount of current crowding is
great, or it can happen later if the amount of heating is
less. Current crowding is always present when an
inductive load is attached to the collector. By switching
the BJT faster, with the circuits in Figure 15, one can
greatly reduce the effects of second breakdown on the
reliability of the device.

Power Switches
The choice of which semiconductor technology to use
for the power switch function is influenced by many
factors such as cost, peak voltage and current, frequency
of operation, and heatsinking. Each technology has its
own peculiarities that must be addressed during the
design phase.
There are three major power switch choices: the
bipolar junction transistor (BJT), the power MOSFET,
and the integrated gate bipolar transistor (IGBT). The
BJT was the first power switch to be used in this field and
still offers many cost advantages over the others. It is also
still used for very low cost or in high power switching
converters. The maximum frequency of operation of
bipolar transistors is less than 80-100 kHz because of
some of their switching characteristics. The IGBT is used
for high power switching converters, displacing many of
the BJT applications. They too, though, have a slower
switching characteristic which limits their frequency of
operation to below 30 kHz typically although some can
reach 100 kHz. IGBTs have smaller die areas than power
MOSFETs of the same ratings, which typically means a
lower cost. Power MOSFETs are used in the majority of
applications due to their ease of use and their higher
frequency capabilities. Each of the technologies will be
reviewed.

The Bipolar Power Transistor

The BJT is a current driven device. That means that the
base current is in proportion to the current drawn through
the collector. So one must provide:
IB  IC hFE

(eq. 8)

In power transistors, the average gain (hFE) exhibited at

the higher collector currents is between 5 and 20. This
could create a large base drive loss if the base drive circuit
is not properly designed.
VBB

VBB

100 pF
Control IC
100 pF

Control IC

VCE
+
VBE
-

Power Ground
Power Ground
(a) Fixed Base Drive Circuit

(b) Proportional Base Drive Circuit (Baker Clamp)

Figure 16. Driving a Bipolar Junction Transistor

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16

SMPSRM

The Power MOSFET

From the gate terminal, there are two capacitances the

designer encounters, the gate input capacitance (Ciss) and
the drain-gate reverse capacitance (Crss). The gate input
capacitance is a fixed value caused by the capacitance
formed between the gate metalization and the substrate.
Its value usually falls in the range of 800-3200 pF,
depending upon the physical construction of the
MOSFET. The Crss is the capacitance between the drain
and the gate, and has values in the range of 60-150 pF.
Although the Crss is smaller, it has a much more
pronounced effect upon the gate drive. It couples the
drain voltage to the gate, thus dumping its stored charge
into the gate input capacitance. The typical gate drive
waveforms can be seen in Figure 18. Time period t1 is
only the Ciss being charged or discharged by the
impedance of the external gate drive circuit. Period t2
shows the effect of the changing drain voltage being
coupled into the gate through Crss. One can readily
observe the flattening of the gate drive voltage during
this period, both during the turn-on and turn-off of the
MOSFET. Time period t3 is the amount of overdrive
voltage provided by the drive circuit but not really
needed by the MOSFET.

Power MOSFETs are the popular choices used as

power switches and synchronous rectifiers. They are, on
the surface, simpler to use than BJTs, but they have some
hidden complexities.
A simplified model for a MOSFET can be seen in
Figure 17. The capacitances seen in the model are
specified within the MOSFET data sheets, but can be
nonlinear and vary with their applied voltages.

CDG
Coss
CGS

Figure 17. The MOSFET Model

TURNON
t1

VDR
t3

TURN-OFF
t3

t2

t2

VGS

t1

Vpl
Vth
0

VDS
0

IG

+
0
-

Figure 18. Typical MOSFET Drive Waveforms (Top: VGS, Middle: VDG, Bottom: IG)

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SMPSRM
Driving MOSFETs in Switching
Power Supply Applications
There are three things that are very important in the
high frequency driving of MOSFETs: there must be a
totem-pole driver; the drive voltage source must be well
bypassed; and the drive devices must be able to source
high levels of current in very short periods of time (low
compliance). The optimal drive circuit is shown in
Figure 19.

The time needed to switch the MOSFET between on

and off states is dependent upon the impedance of the
gate drive circuit. It is very important that the drive circuit
be bypassed with a capacitor that will keep the drive
voltage constant over the drive period. A 0.1 F capacitor
is more than sufficient.

VG

VG

LOAD

LOAD

Ron

Roff

a. Passive Turn-ON

b. Passive Turn-OFF

VG

VG

LOAD

c. Bipolar Totem-pole

LOAD

d. MOS Totem-pole

Figure 19. Bipolar and FET-Based Drive Circuits (a. Bipolar Drivers, b. MOSFET Drivers)

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18

SMPSRM
Sometimes it is necessary to provide a
dielectrically-isolated drive to a MOSFET. This is
provided by a drive transformer. Transformers driven
from a DC source must be capacitively coupled from the
totem-pole driver circuit. The secondary winding must
be capacitively coupled to the gate with a DC restoration

VG

circuit. Both of the series capacitors must be more than

10 times the value of the Ciss of the MOSFET so that the
capacitive voltage divider that is formed by the series
capacitors does not cause an excessive attenuation. The
circuit can be seen in Figure 20.

RG

1k
C
1:1
C > 10
Ciss

Figure 20. Transformer-Isolated Gate Drive

Rectifiers
Rectifiers represent about 60 percent of the losses in
nonsynchronous switching power supplies. Their choice
has a very large effect on the efficiency of the power
supply.
The significant rectifier parameters that affect the
operation of switching power supplies are:
forward voltage drop (Vf), which is the voltage
across the diode when a forward current is flowing
the reverse recovery time (trr), which is how long it
requires a diode to clear the minority charges from
its junction area and turn off when a reverse voltage
is applied
the forward recovery time (tfrr) which is how long it
take a diode to begin to conduct forward current
after a forward voltage is applied.
There are four choices of rectifier technologies:
standard, fast and ultra-fast recovery types, and Schottky
barrier types.
A standard recovery diode is only suitable for
50-60 Hz rectification due to its slow turn-off
characteristics. These include common families such as
the 1N4000 series diodes. Fast-recovery diodes were
first used in switching power supplies, but their turn-off
time is considered too slow for most modern
applications. They may find application where low cost
is paramount, however. Ultra-fast recovery diodes turn
off quickly and have a forward voltage drop of 0.8 to
1.3 V, together with a high reverse voltage capability of
up to 1000 V. A Schottky rectifier turns off very quickly
and has an average forward voltage drop of between 0.35
and 0.8 V, but has a low reverse breakdown voltage and

The Insulated Gate Bipolar

Transistor (IGBT)
The IGBT is a hybrid device with a MOSFET as the
input device, which then drives a silicon-controlled
rectifier (SCR) as a switched output device. The SCR is
constructed such that it does not exhibit the latching
characteristic of a typical SCR by making its feedback
gain less than 1. The die area of the typical IGBT is less
than one-half that of an identically rated power MOSFET,
which makes it less expensive for high-power converters.
The only drawback is the turn-off characteristic of the
IGBT. Being a bipolar minority carrier device, charges
must be removed from the P-N junctions during a turn-off
condition. This causes a current tail at the end of the
turn-off transition of the current waveform. This can be a
significant loss because the voltage across the IGBT is
very high at that moment. This makes the IGBT useful
only for frequencies typically less than 20 kHz, or for
exceptional IGBTs, 100 kHz.
To drive an IGBT one uses the MOSFET drive circuits
shown in Figures 18 and 19. Driving the IGBT gate faster
makes very little difference in the performance of an
IGBT, so some reduction in drive currents can be used.
The voltage drop of across the collector-to-emitter
(VCE) terminals is comparable to those found in
Darlington BJTs and MOSFETs operated at high currents.
The typical VCE of an IGBT is a flat 1.5-2.2 volts.
MOSFETs, acting more resistive, can have voltage drops
of up to 5 volts at the end of some high current ramps. This
makes the IGBT, in high current environments, very
comparable to MOSFETs in applications of less than
5-30 kHz.

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19

SMPSRM
a high reverse leakage current. For a typical switching
power supply application, the best choice is usually a
Schottky rectifier for output voltages less than 12 V, and
an ultra-fast recovery diode for all other output voltages.
The major losses within output rectifiers are
conduction losses and switching losses. The conduction
loss is the forward voltage drop times the current flowing
through it during its conduction period. This can be
significant if its voltage drop and current are high. The
switching losses are determined by how fast a diode turns
off (trr) times the reverse voltage across the rectifier. This
can be significant for high output voltages and currents.

The characteristics of power rectifiers and their

applications in switching power supplies are covered in
great detail in Reference (5).
The major losses within output rectifiers are
conduction losses and switching losses. The conduction
loss is the forward voltage drop times the current flowing
through it during its conduction period. This can be
significant if its voltage drop and current are high. The
switching losses are determined by how fast a diode turns
off (trr) times the reverse voltage across the rectifier. This
can be significant for high output voltages and currents.

Table 2. Types of Rectifier Technologies

Rectifier Type

Average Vf

Reverse Recovery Time

Typical Applications

Standard Recovery
Fast Recovery

0.7-1.0 V

1,000 ns

50-60 Hz Rectification

1.0-1.2 V

150-200 ns

Output Rectification

UltraFast Recovery

0.9-1.4 V

25-75 ns

Output Rectification
(Vo > 12 V)

Schottky

0.3-0.8 V

< 10 ns

Output Rectification
(Vo < 12 V)

Table 3. Estimating the Significant Parameters of the Power Semiconductors

Bipolar Pwr Sw
Topology

IC

VDSS

Vin

Iout

Boost

Vout

(2.0Pout)
Vin(min)

Buck/Boost

Vin  Vout
1.7Vin(max)

Buck

Flyback

VCEO

MOSFET Pwr Sw

Rectifier

ID

VR

IF

Vin

Iout

Vin

Iout

Vout

(2.0Pout)
Vin(min)

Vout

Iout

(2.0Pout)
Vin(min)

Vin  Vout

(2.0Pout)
Vin(min)

Vin  Vout

Iout

(2.0Pout)
Vin(min)

1.5Vin(max)

(2.0Pout)
Vin(min)

5.0 Vout

Iout

1 Transistor
Forward

2.0 Vin

(1.5Pout)
Vin(min)

2.0 Vin

(1.5Pout)
Vin(min)

3.0 Vout

Iout

Push-Pull

2.0 Vin

(1.2Pout)
Vin(min)

2.0 Vin

(1.2Pout)
Vin(min)

2.0 Vout

Iout

Half-Bridge

Vin

(2.0Pout)
Vin(min)

Vin

(2.0Pout)
Vin(min)

2.0 Vout

Iout

Full-Bridge

Vin

(1.2Pout)
Vin(min)

Vin

(2.0Pout)
Vin(min)

2.0 Vout

Iout

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20

SMPSRM
Coiltronics, Division of Cooper Electronics
Technology

The Magnetic Components

The magnetic elements within a switching power
supply are used either for stepping-up or down a
switched AC voltage, or for energy storage. In
forward-mode topologies, the transformer is only used
for stepping-up or down the AC voltage generated by the
power switches. The output filter (the output inductor
and capacitor) in forward-mode topologies is used for
energy storage. In boost-mode topologies, the
transformer is used both for energy storage and to provide
a step-up or step-down function.
Many design engineers consider the magnetic
elements of switching power supplies counter-intuitive
or too complicated to design. Fortunately, help is at hand;
the suppliers of magnetic components have applications
engineers who are quite capable of performing the
transformer design and discussing the tradeoffs needed
for success. For those who are more experienced or more
adventuresome, please refer to Reference 2 in the
Bibliography for transformer design guidelines.
The general procedure in the design of any magnetic
component is as follows (Reference 2, p 42):
1. Select an appropriate core material for the
application and the frequency of operation.
2. Select a core form factor that is appropriate for
the application and that satisfies applicable
regulatory requirements.
3. Determine the core cross-sectional area
necessary to handle the required power
4. Determine whether an airgap is needed and
calculate the number of turns needed for each
winding. Then determine whether the accuracy
of the output voltages meets the requirements
and whether the windings will fit into the
selected core size.
5. Wind the magnetic component using proper
winding techniques.
6. During the prototype stage, verify the
component's operation with respect to the level
of voltage spikes, cross-regulation, output
accuracy and ripple, RFI, etc., and make
corrections were necessary.
The design of any magnetic component is a calculated
estimate. There are methods of stretching the design
limits for smaller size or lower losses, but these tend to
be diametrically opposed to one another. One should be
cautious when doing this.
Some useful sources for magnetics components are:

6000 Park of Commerce Blvd

Boca Raton, FL (USA) 33487
website: http://www.coiltronics.com
Telephone: 561-241-7876
Cramer Coil, Inc.

401 Progress Dr.

Saukville, WI (USA) 53080
website: http://www.cramerco.com
email: techsales@cramercoil.com
Telephone: 262-268-2150
Pulse, Inc.

San Diego, CA
website: http://www.pulseeng.com
Telephone: 858-674-8100
TDK

1600 Feehanville Drive

Mount Prospect, IL 60056
website: http://www.component.talk.com
Telephone: 847-803-6100

Laying Out the Printed Circuit Board

The printed circuit board (PCB) layout is the third
critical portion of every switching power supply design
in addition to the basic design and the magnetics design.
Improper layout can adversely affect RFI radiation,
component reliability, efficiency and stability. Every
PCB layout will be different, but if the designer
appreciates the common factors present in all switching
power supplies, the process will be simplified.
All PCB traces exhibit inductance and resistance.
These can cause high voltage transitions whenever there
is a high rate of change in current flowing through the
trace. For operational amplifiers sharing a trace with
power signals, it means that the supply would be
impossible to stabilize. For traces that are too narrow for
the current flowing through them, it means a voltage drop
from one end of the trace to the other which potentially
can be an antenna for RFI. In addition, capacitive
coupling between adjacent traces can interfere with
proper circuit operation.
There are two rules of thumb for PCB layouts: short
and fat for all power-carrying traces and one point
grounding for the various ground systems within a
switching power supply. Traces that are short and fat
minimize the inductive and resistive aspects of the trace,
thus reducing noise within the circuits and RFI.
Single-point grounding keeps the noise sources
separated from the sensitive control circuits.

CoilCraft, Inc.

1102 Silver Lake Rd.

Cary, IL (USA) 60013
website: http://www.coilcraft.com/
email: info@coilcraft.com
Telephone: 847-639-6400

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21

SMPSRM
Within all switching power supplies, there are four
major current loops. Two of the loops conduct the
high-level AC currents needed by the supply. These are
the power switch AC current loop and the output rectifier
AC current loop. The currents are the typical trapezoidal
current pulses with very high peak currents and very
rapid di/dts. The other two current loops are the input
source and the output load current loops, which carry low
frequency current being supplied from the voltage source
and to the load respectively.
For the power switch AC current loop, current flows
from the input filter capacitor through the inductor or
transformer winding, through the power switch and back
to the negative pin of the input capacitor. Similarly, the
output rectifier current loop's current flows from the
inductor or secondary transformer winding, through the

rectifier to the output filter capacitor and back to the

inductor or winding. The filter capacitors are the only
components that can source and sink the large levels of
AC current in the time needed by the switching power
supply. The PCB traces should be made as wide and as
short as possible, to minimize resistive and inductive
effects. These traces should be the first to be laid out.
Turning to the input source and output load current
loops, both of these loops must be connected directly to
their respective filter capacitor's terminals, otherwise
switching noise could bypass the filtering action of the
capacitor and escape into the environment. This noise is
called conducted interference. These loops can be seen
in Figure 21 for the two major forms of switching
power supplies, non-isolated (Figure 21a) and
transformer-isolated (Figure 21b).

Power Switch
Current Loop

Output Rectifier
Current Loop

Vout

SW

Input Current
Loop

Output Load
Current Loop
+
Vin
-

VFB

Control

Cin

Cout

Analog

GND C

A
Input Source
Ground

B
Power
Switch Ground

Join

Output Load
Ground

Output Rectifier
Ground
Join

Join
(a) The Non-Isolated DC/DC Converter

Input Current
Loop

Output Rectifier
Current Loop

Power Switch
Current Loop

Output Load
Current Loop
Vout

VFB
Cout
SW
+
Vin
-

Cin

Control

FB

RCS

Analog
GND

C
A
Input Source
Ground

B
Output Rectifier
Ground

Output Load
Ground
Join

Join

Power Switch Ground

Join

(b) The Transformer-Isolated Converter

Figure 21. The Current Loops and Grounds for the Major Converter Topologies

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SMPSRM
The grounds are extremely important to the proper
operation of the switching power supply, since they form
the reference connections for the entire supply; each
ground has its own unique set of signals which can
adversely affect the operation of the supply if connected
improperly.
There are five distinct grounds within the typical
switching power supply. Four of them form the return
paths for the current loops described above. The
remaining ground is the low-level analog control ground
which is critical for the proper operation of the supply.
The grounds which are part of the major current loops
must be connected together exactly as shown in
Figure 21. Here again, the connecting point between the
high-level AC grounds and the input or output grounds
is at the negative terminal of the appropriate filter
capacitor (points A and B in Figures 21a and 21b). Noise
on the AC grounds can very easily escape into the
environment if the grounds are not directly connected to
the negative terminal of the filter capacitor(s). The
analog control ground must be connected to the point
where the control IC and associated circuitry must
measure key power parameters, such as AC or DC
current and the output voltage (point C in Figures 21a and
21b). Here any noise introduced by large AC signals
within the AC grounds will sum directly onto the
low-level control parameters and greatly affect the
operation of the supply. The purpose of connecting the
control ground to the lower side of the current sensing
resistor or the output voltage resistor divider is to form a
Kelvin contact where any common mode noise is not
sensed by the control circuit. In short, follow the example
given by Figure 21 exactly as shown for best results.

The last important factor in the PCB design is the

layout surrounding the AC voltage nodes. These are the
drain of the power MOSFET (or collector of a BJT) and
the anode of the output rectifier(s). These nodes can
capacitively couple into any trace on different layers of
the PCB that run underneath the AC pad. In surface
mount designs, these nodes also need to be large enough
to provide heatsinking for the power switch or rectifier.
This is at odds with the desire to keep the pad as small as
possible to discourage capacitive coupling to other
traces. One good compromise is to make all layers below
the AC node identical to the AC node and connect them
with many vias (plated-through holes). This greatly
increases the thermal mass of the pad for improved
heatsinking and locates any surrounding traces off
laterally where the coupling capacitance is much smaller.
An example of this can be seen in Figure 22.
Many times it is necessary to parallel filter capacitors
to reduce the amount of RMS ripple current each
capacitor experiences. Close attention should be paid to
this layout. If the paralleled capacitors are in a line, the
capacitor closest to the source of the ripple current will
operate hotter than the others, shortening its operating
life; the others will not see this level of AC current. To
ensure that they will evenly share the ripple current,
ideally, any paralleled capacitors should be laid out in a
radially-symmetric manner around the current source,
typically a rectifier or power switch.
The PCB layout, if not done properly, can ruin a good
paper design. It is important to follow these basic
guidelines and monitor the layout every step of the
process.

Power Device

Via

PCB Top

Plated-Thru Hole

PCB Bottom

Figure 22. Method for Minimizing AC Capacitive Coupling and Enhancing Heatsinking

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SMPSRM

Losses and Stresses in Switching

Power Supplies

the circuitry, and some are controlled by simply selecting

a different part. Identifying the major sources for loss can
be as easy as placing a finger on each of the components
in search of heat, or measuring the currents and voltages
associated with each power component using an
oscilloscope, AC current probe and voltage probe.
Semiconductor losses fall into two categories:
conduction losses and switching losses. The conduction
loss is the product of the terminal voltage and current
during the power device's on period. Examples of
conduction losses are the saturation voltage of a bipolar
power transistor and the on loss of a power MOSFET
shown in Figure 23 and Figure 24 respectively.

SATURATION
VOLTAGE
STORAGE
TIME

CLEARING
RECTIFIERS

PINCHING OFF INDUCTIVE

CHARACTERISTICS OF THE
TRANSFORMER

TURNON
CURRENT

TURNOFF
CURRENT

SATURATION
LOSS
TURNON
LOSS

TURNOFF LOSS
SWITCHING LOSS

Figure 23. Stresses and Losses

within a Bipolar Power Transistor

IPEAK

PINCHING OFF INDUCTIVE

CHARACTERISTICS OF THE
TRANSFORMER
ON CURRENT
TURNON
CURRENT

CURRENT
TAIL

CURRENT
CROWDING
PERIOD

SECOND
BREAKDOWN
PERIOD

FALL
TIME

CLEARING
RECTIFIERS

IPEAK

SATURATION
CURRENT

ON VOLTAGE

RISE
TIME

INSTANTANEOUS ENERGY
LOSS (JOULES)

COLLECTOR CURRENT
(AMPS)

FALL
TIME

VPEAK

DRAIN CURRENT
(AMPS)

COLLECTORTOEMITTER
(VOLTS)

VPEAK

RISE
DYNAMIC
TIME SATURATION

INSTANTANEOUS ENERGY
LOSS (JOULES)

DRAINTOSOURCE VOLTAGE
(VOLTS)

Much of the designer's time during a switching power

supply design is spent in identifying and minimizing the
losses within the supply. Most of the losses occur in the
power components within the switching power supply.
Some of these losses can also present stresses to the
power semiconductors which may affect the long term
reliability of the power supply, so knowing where they
arise and how to control them is important.
Whenever there is a simultaneous voltage drop across
a component with a current flowing through, there is a
loss. Some of these losses are controllable by modifying

TURNOFF
CURRENT

ON LOSS
TURNON
LOSS

TURNOFF LOSS
SWITCHING LOSS

Figure 24. Stresses and Losses

within a Power MOSFET

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24

SMPSRM

DIODE VOLTAGE
(VOLTS)

The forward conduction loss of a rectifier is shown in

Figure 25. During turn-off, the rectifier exhibits a reverse
recovery loss where minority carriers trapped within the
P-N junction must reverse their direction and exit the
junction after a reverse voltage is applied. This results in
what appears to be a current flowing in reverse through
the diode with a high reverse terminal voltage.
The switching loss is the instantaneous product of the
terminal voltage and current of a power device when it is
transitioning between operating states (on-to-off and
off-to-on). Here, voltages are transitional between
full-on and cutoff states while simultaneously the current
is transitional between full-on and cut-off states. This

creates a very large V-I product which is as significant as

the conduction losses. Switching losses are also the major
frequency dependent loss within every PWM switching
power supply.
The loss-induced heat generation causes stress within
the power component. This can be minimized by an
effective thermal design. For bipolar power transistors,
however, excessive switching losses can also provide a
lethal stress to the transistor in the form of second
breakdown and current crowding failures. Care should be
taken in the careful analysis of each transistor's Forward
Biased-Safe Operating Area (FBSOA) and Reverse
Biased-Safe Operating Area (RBSOA) operation.

FORWARD VOLTAGE

REVERSE VOLTAGE

DIODE CURRENT
(AMPS)

IPK

FORWARD CONDUCTION CURRENT

DEGREE OF DIODE
RECOVERY
ABRUPTNESS

INSTANTANEOUS ENERGY
LOSS (JOULES)

FORWARD
RECOVERY
TIME (Tfr)

REVERSE
RECOVERY
TIME (Trr)

FORWARD CONDUCTION LOSS

SWITCHING
LOSS

Figure 25. Stresses and Losses within Rectifiers

Techniques to Improve Efficiency in

Switching Power Supplies

rectification is a technique to reduce this conduction loss

by using a switch in place of the diode. The synchronous
rectifier switch is open when the power switch is closed,
and closed when the power switch is open, and is
typically a MOSFET inserted in place of the output
rectifier. To prevent crowbar current that would flow if
both switches were closed at the same time, the switching
scheme must be break-before-make. Because of this, a
diode is still required to conduct the initial current during
the interval between the opening of the main switch and
the closing of the synchronous rectifier switch. A
Schottky rectifier with a current rating of 30 percent of

The reduction of losses is important to the efficient

operation of a switching power supply, and a great deal
of time is spent during the design phase to minimize these
losses. Some common techniques are described below.
The Synchronous Rectifier
As output voltages decrease, the losses due to the
output rectifier become increasingly significant. For
Vout = 3.3 V, a typical Schottky diode forward voltage of
0.4 V leads to a 12% loss of efficiency. Synchronous

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25

SMPSRM
the MOSFET should be placed in parallel with the
synchronous MOSFET. The MOSFET does contain a
parasitic body diode that could conduct current, but it is
lossy, slow to turn off, and can lower efficiency by 1% to
2%. The lower turn-on voltage of the Schottky prevents
the parasitic diode from ever conducting and exhibiting
its poor reverse recovery characteristic.
Using synchronous rectification, the conduction
voltage can be reduced from 400 mV to 100 mV or less.
An improvement of 1-5 percent can be expected for the

typical switching power supply.

The synchronous rectifier can be driven either actively,
that is directly controlled from the control IC, or
passively, driven from other signals within the power
circuit. It is very important to provide a non-overlapping
drive between the power switch(es) and the synchronous
rectifier(s) to prevent any shoot-through currents. This
dead time is usually between 50 to 100 ns. Some typical
circuits can be seen in Figure 26.

Vin

+ Vout

SW
Drive
GND
Direct

SR

RG

C
VG
C

1k

1:1
C > 10 Ciss
Transformer-Isolated
(a) Actively Driven Synchronous Rectifiers

LO
+ Vout
Primary
-

(b) Passively Driven Synchronous Rectifiers

Figure 26. Synchronous Rectifier Circuits

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26

SMPSRM
Snubbers and Clamps
Snubbers and clamps are used for two very different
purposes. When misapplied, the reliability of the
semiconductors within the power supply is greatly
jeopardized.
A snubber is used to reduce the level of a voltage spike
and decrease the rate of change of a voltage waveform.
This then reduces the amount of overlap of the voltage
and current waveforms during a transition, thus reducing
the switching loss. This has its benefits in the Safe
Operating Area (SOA) of the semiconductors, and it
reduces emissions by lowering the spectral content of any
RFI.
A clamp is used only for reducing the level of a voltage
spike. It has no affect on the dV/dt of the transition.

ZENER
CLAMP

SOFT
CLAMP

Therefore it is not very useful for reducing RFI. It is

useful for preventing components such as
semiconductors and capacitors from entering avalanche
breakdown.
Bipolar power transistors suffer from current crowding
which is an instantaneous failure mode. If a voltage spike
occurs during the turn-off voltage transition of greater
than 75 percent of its VCEO rating, it may have too much
current crowding stress. Here both the rate of change of
the voltage and the peak voltage of the spike must be
controlled. A snubber is needed to bring the transistor
within its RBSOA (Reverse Bias Safe Operating Area)
rating. Typical snubber and clamp circuits are shown in
Figure 27. The effects that these have on a representative
switching waveform are shown in Figure 28.

SNUBBER

SNUBBER

SOFT
CLAMP

ZENER
CLAMP

Figure 27. Common Methods for Controlling Voltage Spikes and/or RFI

VOLTAGE (VOLTS)

CLAMP
SNUBBER

ORIGINAL
WAVEFORM

t, TIME (sec)

Figure 28. The Effects of a Snubber versus a Clamp

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27

SMPSRM
The Lossless Snubber
A lossless snubber is a snubber whose trapped energy
is recovered by the power circuit. The lossless snubber is
designed to absorb a fixed amount of energy from the
transition of a switched AC voltage node. This energy is
stored in a capacitor whose size dictates how much
energy the snubber can absorb. A typical implementation
of a lossless snubber can be seen in Figure 29.
The design for a lossless snubber varies from topology
to topology and for each desired transition. Some
adaptation may be necessary for each circuit. The
important factors in the design of a lossless snubber are:
1. The snubber must have initial conditions that
allow it to operate during the desired transition
and at the desired voltages. Lossless snubbers
should be emptied of their energy prior to the
desired transition. The voltage to which it is
reset dictates where the snubber will begin to
operate. So if the snubber is reset to the input
voltage, then it will act as a lossless clamp which
will remove any spikes above the input voltage.

2. When the lossless snubber is reset, the

energy should be returned to the input
capacitor or back into the output power path.
Study the supply carefully. Returning the
energy to the input capacitor allows the supply
to use the energy again on the next cycle.
Returning the energy to ground in a boostmode supply does not return the energy for
reuse, but acts as a shunt current path around
the power switch. Sometimes additional
transformer windings are used.
3. The reset current waveform should be band
limited with a series inductor to prevent
additional EMI from being generated. Use of a
2 to 3 turn spiral PCB inductor is sufficient to
greatly lower the di/dt of the energy exiting the
lossless snubber.

Unsnubbed VSW

+
VSW

Snubbed VSW
ID

Drain Current (ID)

Figure 29. Lossless Snubber for a One Transistor Forward or Flyback Converter

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28

SMPSRM
The Active Clamp
An active clamp is a gated MOSFET circuit that allows
the controller IC to activate a clamp or a snubber circuit
at a particular moment in a switching power supply's
cycle of operation. An active clamp for a flyback
converter is shown in Figure 30.
In Figure 30, the active clamp is reset (or emptied of its

stored energy) just prior to the turn-off transition. It is

then disabled during the negative transition.
Obviously, the implementation of an active clamp is
more expensive than other approaches, and is usually
reserved for very compact power supplies where heat is
a critical issue.

Unclamped
Switch Voltage
(VSW)

Clamped Switch
Voltage (VSW)
Vin
Switch
Current (ISW)

+
ICL

VDR

ISW

VSW
-

GND

Drive
Voltage (VDR)
Discharge

Charge

Clamp
Current (ICL)

Figure 30. An Active Clamp Used in a One Transistor Forward or a Flyback Converter

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29

SMPSRM
Quasi-Resonant Topologies
A quasi-resonant topology is designed to reduce or
eliminate the frequency-dependent switching losses
within the power switches and rectifiers. Switching
losses account for about 40% of the total loss within a
PWM power supply and are proportional to the switching
frequency. Eliminating these losses allows the designer
to increase the operating frequency of the switching
power supply and so use smaller inductors and
capacitors, reducing size and weight. In addition, RFI
levels are reduced due to the controlled rate of change of
current or voltage.
The downside to quasi-resonant designs is that they
are more complex than non-resonant topologies due to
parasitic RF effects that must be considered when

switching frequencies are in the 100's of kHz.

Schematically, quasi-resonant topologies are minor
modifications of the standard PWM topologies. A
resonant tank circuit is added to the power switch section
to make either the current or the voltage ring through
a half a sinusoid waveform. Since the sinusoid starts at
zero and ends at zero, the product of the voltage and
current at the starting and ending points is zero, thus has
no switching loss.
There are two quasi-resonant methods: zero current
switching (ZCS) or zero voltage switching (ZVS). ZCS
is a fixed on-time, variable off-time method of control.
ZCS starts from an initial condition where the power
switch is off and no current is flowing through the
resonant inductor. The ZCS quasi-resonant buck
converter is shown in Figure 31.

ILR
LR

LO

CR

VSW

Vin
Cin

Cout

CONTROL

Vout

FEEDBACK

A ZCS Quasi-Resonant Buck Converter

V SW

SWITCH
TURNOFF
Vin
POWER SWITCH
ON

VD

I LR

IPK

Figure 31. Schematic and Waveforms for a ZCS QuasiResonant Buck Converter

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SMPSRM
In this design, both the power switch and the catch
diode operate in a zero current switching mode. Power is
passed to the output during the resonant periods. So to
increase the power delivered to the load, the frequency
would increase, and vice versa for decreasing loads. In
typical designs the frequency can change 10:1 over the
ZCS supply's operating range.
The ZVS is a fixed off-time, variable on-time method
control. Here the initial condition occurs when the power
switch is on, and the familiar current ramp is flowing
through the filter inductor. The ZVS quasi-resonant buck
converter is shown in Figure 32. Here, to control the

power delivered to the load, the amount of resonant off

times are varied. For light loads, the frequency is high.
When the load is heavy, the frequency drops. In a typical
ZVS power supply, the frequency typically varies 4:1
over the entire operating range of the supply.
There are other variations on the resonant theme that
promote zero switching losses, such as full resonant
PWM, full and half-bridge topologies for higher power
and resonant transition topologies. For a more detailed
treatment, see Chapter 4 in the Power Supply
Cookbook (Bibliography reference 2).

LR

LO

CR
Vin

Cin

VI/P

FEEDBACK

CONTROL

A ZVS Quasi-Resonant Buck Converter

V I/P

Vin
POWER SWITCH
TURNS ON

V
I SW

IPK

in

L
V
L

V

out

L

in
R

ILOAD

ID

Figure 32. Schematic and Waveforms for a

ZVS QuasiResonant Buck Converter

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31

Cout

Vout

SMPSRM

Power Factor Correction

requiring all electrical equipment connected to

a low voltage distribution system to minimize
current harmonics and maximize power factor.
2. The reflected power not wasted in the
resistance of the power cord may generate
unnecessary heat in the source (the local
step-down transformer), contributing to
premature failure and constituting a fire hazard.
3. Since the ac mains are limited to a finite current
by their circuit breakers, it is desirable to get
the most power possible from the given current
available. This can only happen when the
power factor is close to or equal to unity.
The typical AC input rectification circuit is a diode
bridge followed by a large input filter capacitor. During
the time that the bridge diodes conduct, the AC line is
driving an electrolytic capacitor, a nearly reactive load.
This circuit will only draw current from the input lines
when the input's voltage exceeds the voltage of the filter
capacitor. This leads to very high currents near the peaks
of the input AC voltage waveform as seen in Figure 33.
Since the conduction periods of the rectifiers are small,
the peak value of the current can be 3-5 times the average
input current needed by the equipment. A circuit breaker
only senses average current, so it will not trip when the
peak current becomes unsafe, as found in many office
areas. This can present a fire hazard. In three-phase
distribution systems, these current peaks sum onto the
neutral line, not meant to carry this kind of current, which
again presents a fire hazard.

Power Factor (PF) is defined as the ratio of real power

to apparent power. In a typical AC power supply
application where both the voltage and current are
sinusoidal, the PF is given by the cosine of the phase
angle between the input current and the input voltage and
is a measure of how much of the current contributes to
real power in the load. A power factor of unity indicates
that 100% of the current is contributing to power in the
load while a power factor of zero indicates that none of
the current contributes to power in the load. Purely
resistive loads have a power factor of unity; the current
through them is directly proportional to the applied
voltage.
The current in an ac line can be thought of as consisting
of two components: real and imaginary. The real part
results in power absorbed by the load while the imaginary
part is power being reflected back into the source, such
as is the case when current and voltage are of opposite
polarity and their product, power, is negative.
It is important to have a power factor as close as
possible to unity so that none of the delivered power is
reflected back to the source. Reflected power is
undesirable for three reasons:
1. The transmission lines or power cord will
generate heat according to the total current
being carried, the real part plus the reflected
part. This causes problems for the electric
utilities and has prompted various regulations

VOLTAGE

Power
not used

Power used
I
110/220
AC VOLTS IN

CURRENT

Clarge

IAV

Figure 33. The Waveforms of a Capacitive Input Filter

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32

DC To Power
Supply
-

SMPSRM
A Power Factor Correction (PFC) circuit is a switching
power converter, essentially a boost converter with a very
wide input range, that precisely controls its input current
on an instantaneous basis to match the waveshape and
phase of the input voltage. This represents a zero degrees
or 100 percent power factor and mimics a purely resistive
load. The amplitude of the input current waveform is
varied over longer time frames to maintain a constant
voltage at the converter's output filter capacitor. This
mimics a resistor which slowly changes value to absorb
the correct amount of power to meet the demand of the
load. Short term energy excesses and deficits caused by
sudden changes in the load are supplemented by a bulk
energy storage capacitor, the boost converter's output
filter device. The PFC input filter capacitor is reduced to
a few microfarads, thus placing a half-wave haversine
waveshape into the PFC converter.
The PFC boost converter can operate down to about
30 V before there is insufficient voltage to draw any more
significant power from its input. The converter then can
begin again when the input haversine reaches 30 V on the
next half-wave haversine. This greatly increases the
conduction angle of the input rectifiers. The drop-out
region of the PFC converter is then filtered (smoothed)
by the input EMI filter.
A PFC circuit not only ensures that no power is
reflected back to the source, it also eliminates the
high current pulses associated with conventional
rectifier-filter input circuits. Because heat lost in the
transmission line and adjacent circuits is proportional to
the square of the current in the line, short strong current

pulses generate more heat than a purely resistive load of

the same power. The active power factor correction
circuit is placed just following the AC rectifier bridge. An
example can be seen in Figure 34.
Depending upon how much power is drawn by the unit,
there is a choice of three different common control
modes. All of the schematics for the power sections are
the same, but the value of the PFC inductor and the
control method are different. For input currents of less
than 150 watts, a discontinuous-mode control scheme is
typically used, in which the PFC core is completely
emptied prior to the next power switch conduction cycle.
For powers between 150 and 250 watts, the critical
conduction mode is recommended. This is a method of
control where the control IC senses just when the PFC
core is emptied of its energy and the next power switch
conduction cycle is immediately begun; this eliminates
any dead time exhibited in the discontinuous-mode of
control. For an input power greater than 250 watts, the
continuous-mode of control is recommended. Here the
peak currents can be lowered by the use of a larger
inductor, but a troublesome reverse recovery
characteristic of the output rectifier is encountered,
which can add an additional 20-40 percent in losses to the
PFC circuit.
Many countries cooperate in the coordination of their
power factor requirements. The most appropriate
document is IEC61000-3-2, which encompasses the
performance of generalized electronic products. There
are more detailed specifications for particular products
made for special markets.

Switch Current
Input Voltage

Vout
Vsense

Csmall

+
Control

Conduction Angle

Voltage

Figure 34. Power Factor Correction Circuit

Current

IAVG

Figure 35. Waveform of Corrected Input

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Clarge

To Power
Supply
-

SMPSRM

Bibliography
1. Ben-Yaakov Sam, Gregory Ivensky, Passive Lossless Snubbers for High Frequency PWM Converters,
Seminar 12, APEC 99.
2. Brown, Marty, Power Supply Cookbook, Butterworth-Heinemann, 1994, 2001.
3. Brown, Marty, Laying Out PC Boards for Embedded Switching Supplies, Electronic Design, Dec. 1999.
4. Martin, Robert F., Harmonic Currents, Compliance Engineering - 1999 Annual Resources Guide, Cannon
Communications, LLC, pp. 103-107.
5. ON Semiconductor, Rectifier Applications Handbook, HB214/D, Rev. 2, Nov. 2001.

www.onsemi.com
34

SMPSRM

SWITCHMODE Power Supply Examples

This section provides both initial and detailed information to simplify the selection and design of a variety of
SWITCHMODE power supplies. The ICs for Switching Power Supplies figure identifies control, reference voltage,
output protection and switching regulator ICs for various topologies.
Page
ICs for Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Integrated circuits identified for various sections of a switching power supply.
Suggested Components for Specific Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
A list of suggested control ICs, power transistors and rectifiers for SWITCHMODE power supplies by application.
CRT Display System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC/DC Power Supply for CRT Displays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC/DC Power Supply for Storage, Imaging & Entertainment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC-DC Conversion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical PC Forward-Mode SMPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

38
39
39
40
41

Real SMPS Applications

80 W Power Factor Correction Controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Compact Power Factor Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Monitor Pulsed-Mode SMPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70 W Wide Mains TV SMPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100 W Wide Mains TV SMPS with 1.3 W Stand-by . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Low-Cost Off-line IGBT Battery Charger . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
110 W Output Flyback SMPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Efficient Safety Circuit for Electronic Ballast . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC-DC Battery Charger - Constant Current with Voltage Limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

42
43
44
46
48
50
51
53
55

Some of these circuits may have a more complete application note, spice model information or even an evaluation board
available. Consult ON Semiconductor's website (www.onsemi.com) or local sales office for more information.

www.onsemi.com
35

www.onsemi.com

36
STARTUP

MMSZ46xx

MMSZ52xx

MMBZ52xx

STARTUP

REF

CS3843
CS51021
CS51022
CS51023
CS51024
CS5106
CS51220
CS51221

CONTROL

OSC

PWM

SNUBBER/
CLAMP

CONTROL

CS51227
CS5124
MC33023
MC33025
MC33065
MC33067
MC33364
MC44603A

TRANSFORMERS

MC44604
MC44605
MC44608
NCP1200
NCP1205
UC384x

OUTPUT
FILTERS

MC33161
MC33164
MC3423
NCP30x
NCP803

OUTPUT
PROTECTION

MAX707
MAX708
MAX809
MAX810
MC33064

VOLTAGE
FEEDBACK

MC33275
MC33761
MC34268
MC78xx
MC78Bxx
MC78Fxx
MC78Lxx
MC78Mxx
MC78PCxx
MC78Txx
MC7905
MC7905.2

MC7905A
MC7906
MC7908
MC7908A
MC7912
MC7915
MC7918
MC7924
MC79Mxx
NCP1117
NCP50x
NCP51x
VOLTAGE REGULATION

L4949
LM2931
LM2935
LM317
LM317L
LM317M
LM337
LM350
LP2950
LP2951
MC33263
MC33269

V ref

VOLTAGE
REGULATION

CS51031 MC34063A
CS51033 MC34163
CS51411 MC34166
CS51412 MC34167
CS51413 NCP1400A
CS51414 NCP1402
CS5171
NCP1410
CS5172
NCP1411
NCP1417
CS5173
CS5174 NCP1450A
MC33463 NCP1550
MC33466

DC-DC CONVERSION

DC-DC
CONVERSION

OUTPUT PROTECTION

CS5101
NCP100
TL431/A/B
TLV431A

VOLTAGE
FEEDBACK

MBR1100
MBRS240L
MBR3100
MBRS360
MBR360 MURHF860CT
MBRD360
MURS360
MBRS1100

OUTPUT FILTERS

Figure 30. Integrated Circuits for Switching Power Supplies

POWER
SWITCH

POWER MOS
DRIVERS

MC33153

1N62xxA
1N63xxA
MUR160
MUR260
MURS160
MURS260
P6KExxxA
P6SMB1xxA

Figure 36. . Intergrated Ciruits

for Switching Power Supplies

HV SWITCHING
REGULATORS

MC33362
MC33363
MC33365
NCP100x
NCP105x

POWER FACTOR
CORRECTION

MC33260
MC33262
MC33368
MC34262
NCP1650
NCP1651

POWER FACTOR
CORRECTION

MC33152

MC33151

POWER MOS
DRIVERS

SNUBBER/
CLAMP

SMPSRM

USB HUB

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37

600V 8A
N-Ch
MOSFET

Sync
Signal

S.M.P.S
Controller

UC384x
MC44603/5
MC44608
NCP1200
NCP1205

PFC Devices
NCP1650
NCP1651
MC34262
MC33368
MC33260

Line
A.C.

RGB

or I2C

PWM

H_Sync

V_Sync

I2C BUS

MUR420
MUR440
MUR460

H_Sync

V_Sync

MC33363A/B
NCP100x
NCP105x
NCP1200

HC05
CPU
CORE MEMORY

USB & Auxiliary Standby

AC/DC
Power Supply

1280
x
1024

10101100101

RWM

Overlayed
RGB

Figure 31. 15 Monitor Power Supplies

Timebase Processor

IRF630 / 640 / 730 /740 / 830 / 840

Geometry Correction

RGB

On Screen Display
Generator

Figure 37.
. 15
Monitor
Power
Supplies

UP

DOWN

H_Sync

V_Sync

SYNC PROCESSOR

Monitor
MCU

Vertical
Driver

H-Driver TR

UC3842/3
MTP6P20E

H-Output TR

MTD6N10/15

RGB

Line Driver

H-Driver

DC TO DC
CONTROLLER

Video
Driver

MUR8100E
MUR4100E
MUR460

Damper Diode

CRT

SMPSRM

SMPSRM

Ultrafast
Rectifier

Start-up
Switch
Rectifier

Bulk
Storage
Capacitor

AC
Line

Load

PWM
Control
IC

MOSFET
n-outputs

PWM Switcher

Prog.
Prec.
Ref

Figure 38. AC/DC Power Supply for CRT Displays

Table 1.
Part #

Description

Key Parameters

Samples/Prod.

MC33262

PFC Control IC

Critical Conduction PFC Controller

Now/Now

MC33368

PFC Control IC

Critical Conduction PFC Controller + Internal Start-up

Now/Now

MC33260

PFC Control IC

Low System Cost, PFC with Synchronization

Capability, Follower Boost Mode, or Normal Mode

Now/Now

MC33365

PWM Control IC

Fixed Frequency Controller + 700 V Start-up, 1 A

Power Switch

Now/Now

MC33364

PWM Control IC

Variable Frequency Controller + 700 V Start-up Switch

Now/Now

MC44603A/604

PWM Control IC

GreenLine, Sync. Facility with Low Standby Mode

Now/Now

MC44605

PWM Control IC

GreenLine, Sync. Facility, Current-mode

Now/Now

MC44608

PWM Control IC

GreenLine, Fixed Frequency (40 kHz, 75 kHz and 100

kHz options), Controller + Internal Start-up, 8-pin

Now/Now

MSR860

Ultrasoft Rectifier

600 V, 8 A, trr = 55 ns, Ir max = 1 uA

Now/Now

Ultrafast Rectifier

MUR440

400 V, 4 A, trr = 50 ns, Ir max = 10 uA

Now/Now

MRA4006T3

Fast Recovery Rectifier

800 V, 1 A, Vf = 1.1 V @ 1.0 A

Now/Now

MR856

Fast Recovery Rectifier

600 V, 3 A, Vf = 1.25 V @ 3.0 A

Now/Now

NCP1200

PWM Current-Mode Controller

110 mA Source/Sink, O/P Protection, 40/60/110 kHz

Now/Now

NCP1205

Single-Ended PWM Controller

Quasi-resonant Operation, 250 mA Source/Sink,

8-36 V Operation

Now/Now

High Performance Current-Mode

Controllers

500 kHz Freq., Totem Pole O/P, Cycle-by-Cycle

Current Limiting, UV Lockout

Now/Now

UC3842/3/4/5

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38

SMPSRM

Ultrafast
Rectifier

Start-up
Switch
Rectifier

Bulk
Storage
Capacitor

AC
Line

Load

PWM
Control
IC

MOSFET
n-outputs

PWM Switcher

Prog.
Prec.
Ref

Figure 39. AC/DC Power Supply for Storage,

Imaging & Entertainment

Table 2.
Part #
MC33363A/B/65
MC33364
TL431B
MSRD620CT
MR856

Description

Key Parameters

Samples/Prod.

PWM Control IC

Controller + 700 V Start-up & Power Switch, < 15 W

Now/Now

PWM Control IC

Critical Conduction Mode, SMPS Controller

Now/Now

0.4% Tolerance, Prog. Output up to 36 V, Temperature

Compensated

Now/Now

200 V, 6 A, trr = 55 ns, Ir max = 1 uA

Now/Now

600 V, 3 A, Vf = 1.25 V @ 3.0 A

Now/Now

Program Precision Reference

Ultrasoft Rectifier
Fast Recovery Rectifier

NCP1200

PWM Current-Mode Controller

110 mA Source/Sink, O/P Protection, 40/60/110 kHz

Now/Now

NCP1205

Single-Ended PWM Controller

Quasi-resonant Operation, 250 mA Source/Sink,

8-36 V Operation

Now/Now

High Performance Current-Mode

Controllers

500 kHz Freq., Totem Pole O/P, Cycle-by-Cycle

Current Limiting, UV Lockout

Now/Now

UC3842/3/4/5

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39

SMPSRM
Lo
+
V in

Lo

Voltage
Regulation +

Co
Control IC

Vout

+
V in

Load

+
Control IC

Co

Vout

Load

Buck Regulator

Synchronous Buck Regulator

Figure 40. DC - DC Conversion

Table 3.
Part #

Description

MC33263

Low Noise, Low Dropout

Regulator IC

MC33269

Medium Dropout Regulator IC

MC33275/375
LP2950/51

Low Dropout Regulator

Low Dropout, Fixed Voltage IC

Key Parameters

Samples/Prod.

150 mA; 8 Outputs 2.8 V - 5 V; SOT 23L 6 Lead

Package

Now/Now

0.8 A; 3.3; 5, 12 V out; 1 V diff; 1% Tolerance

Now/Now

300 mA; 2.5, 3, 3.3, 5 V out

Now/Now

0.1 A; 3, 3.3, 5 V out; 0.38 V diff; 0.5% Tolerance

Now/Now

Iout = 150 mA, Available in 2.8 V, 3 V, 3.3 V, 5 V; SOT

23 - 5 Leads

Now/Now

MC78PC

CMOS LDO Linear Voltage

Regulator

MC33470

Synchronous Buck Regulator IC

Digital Controlled; Vcc = 7 V; Fast Response

Now/Now

NTMSD2P102LR2

P-Ch FET w/Schottky in SO-8

20 V, 2 A, 160 m FET/1 A, Vf = 0.46 V Schottky

Now/Now

NTMSD3P102R2

P-Ch FET w/Schottky in SO-8

20 V, 3 A, 160 m FET/1 A, Vf = 0.46 V Schottky

Now/Now

MMDFS6N303R2

N-Ch FET w/Schottky in SO-8

30 V, 6 A, 35 m FET/3 A, Vf = 0.42 V Schottky

Now/Now

NTMSD3P303R2

P-Ch FET w/Schottky in SO-8

30 V, 3 A, 100 m FET/3 A, Vf = 0.42 V Schottky

Now/Now

MBRM140T3

1A Schottky in POWERMITE
Package

40 V, 1 A, Vf = 0.43 @ 1 A; Ir = 0.4 mA @ 40 V

Now/Now

MBRA130LT3

1A Schottky in SMA Package

40 V, 1 A, Vf = 0.395 @ 1 A; Ir = 1 mA @ 40 V

Now/Now

MBRS2040LT3

2A Schottky in SMB Package

40 V, 2 A, Vf = 0.43 @ 2 A; Ir = 0.8 mA @ 40 V

Now/Now

MMSF3300
NTD4302

Single N-Ch MOSFET in SO-8

Single N-Ch MOSFET in DPAK

30 V, 11.5

A(1), 12.5

30 V, 18.3

A(1), 10

m @ 10 V

m @ 10 V

Now/Now
Now/Now

NTTS2P03R2

Single P-Ch MOSFET in

Micro8 Package

30 V, 2.7 A, 90 m @ 10 V

Now/Now

MGSF3454X/V

Single N-Ch MOSFET in

TSOP-6

30 V, 4.2 A, 65 m @ 10 V

Now/Now

NTGS3441T1

Single P-Ch MOSFET in

TSOP-6

20 V, 3.3 A, 100 m @ 4.5 V

Now/Now

Prog. O/P Voltage 1.0, 1.3, 1.5, 1.8 V

Now/Now

NCP1500

Dual Mode PWM Linear Buck

Converter

NCP1570

Low Voltage Synchronous Buck

Converter

UV Lockout, 200 kHz Osc. Freq., 200 ns Response

Now/Now

NCP1571

Low Voltage Synchronous Buck

Converter

UV Lockout, 200 kHz Osc. Freq., 200 ns Response

Now/Now

Dual Synchronous Buck

Converter

150 kHz-600 kHz Prog. Freq., UV Lockout, 150 ns

Transient Response

Now/Now

CS5422

(1) Continuous at TA = 25 C, Mounted on 1 square FR-4 or G10, VGS = 10 V t  10 seconds

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40

400
1000
400
1000
400
1000

1N5404RL
1N5406RL
1N5408RL

Axial
Axial
Axial

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41
V RRM (V)
600
1000
600
1000
600
1000
600

MUR180E, MUR1100E
MUR480E, MUR4100E
MR756RL, MR760RL
1N4937

DIP8/SO-8/SO-14
DIP14/SO-14
DIP16/SO-16
DIP16/SO-16
DIP16/SO-16
DIP8
DIP16/SO-16
DIP16/SO-16

U384X Series
MC34060
TL494
TL594
MC34023
MC44608
MC44603
MC44603A

Part No.

Package

5 V 0.1 A

Mains
230 Vac

3
3
3

I o (A) Package

Part No.

Voltage
Stand-by

V RRM (V)

Part No.

60

MBR160

Axial
Axial
Axial
Axial

I o (A)
Axial

MATRIX

Package

-12 V 0.8 A

-5 V 0.5 A

+12 V 6 A

+5 V 22 A

+3.3 V 14 A

Figure 35. Typical 200 W ATX Forward Mode SMPS

1
4
6
1

I o (A) Package

PWM
IC

V RRM (V)

Part No.

Package
TO-92

TL431

Part No.

100

MBR3100

I o (A)

40
40
30
40
40
V RRM (V)

Package

I o (A)
V RRM (V)

Part No.
MBRS340T3
MBRD340
1N5821
1N5822
MBR340
Part No.

TO-220
TO-220
TO-220
TO-220
TO-220
TO-220

20
20
20
16
16
16

60
100
200
200
200
200

Axial

Package

SMC
DPAK
Axial
Axial
Axial

Package

I o (A)
V RRM (V)

Part No.
MBR2060CT
MBR20100CT
MBR20200CT
MUR1620CT
MUR1620CTR
MURF1620CT

3
3
3
3
3

TO-220
TO-220
TO-220
TO-220
TO-218
TO-247

25
25
30
25
30
30

Package

TO-220

Package

35
45
45
45
45
45

Part No.
MBR2535CTL
MBR2545CT
MBR3045ST
MBRF2545CT
MBR3045PT
MBR3045WT

V RRM (V) I o (A)

V RRM (V) I o (A)

35
MBR2535CTL
25
Part No.

SMPSRM

Figure 41. . Typical 200 W

ATX Forward Mode SMPS

SMPSRM

Application: 80 W Power Factor Controller

1

100 k
R6
8

C5
MC33262

92 to
138 Vac

RFI
FILTER

D2

D4

ZERO CURRENT
DETECTOR
D1

36 V

1.2 V

D3

DRIVE
OUTPUT
10

DELAY
RS
LATCH

0.01
C2

7.5 k
R3

MUR130
D5

16 V

20 k
1.5 V OVERVOLTAGE

0.1
R7

10 pF

VO
230 V/
0.35 A
+

MULTIPLIER

ERROR AMP
+
10 A
Vref

QUICKSTART
2
0.68
C1

Figure 42. 80 W Power Factor Controller

Features:
Reduced part count, low-cost solution.
ON Semiconductor Advantages:
Complete semiconductor solution based around highly integrated MC33262.
Description

MC33262
MUR130

Power Factor Controller

Axial Lead Ultrafast Recovery Rectifier (300 V)

Transformer

Coilcraft N2881-A
Primary: 62 turns of #22 AWG
Secondary: 5 turns of #22 AWG
Core: Coilcraft PT2510
Gap: 0.072 total for a primary inductance (Lp) of 320 H

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42

220
C3

1.0 M
R2

+ 1.08 Vref

Devices:
Part Number

500 V/8 A
N-Ch
MOSFET
Q1

COMPARATOR

CURRENT
SENSE
COMPARATOR

22 k
R4

+ 13 V/
8.0 V

10

2.2 M
R5

100
C4

UVLO

2.5 V
REFERENCE

TIMER

6.7 V

1.6 V/
1.4 V

1N4934
D6

11 k
R1

SMPSRM

Application: Compact Power Factor Correction

Vcc
0.33 F

FUSE
1N5404
AC LINE 100 nF

L1

10 F/
16 V

MAINS
FILTER

Vout

MUR460

100 nF

8
MC33260

7
10 

500 V/8 A
N-Ch
MOSFET

6
5

12 k

1 M

120 pF
45 k

0.5 /3 W

1 M

Figure 43. Compact Power Factor Correction

Features :
Low-cost system solution for boost mode follower.
Meets IEC1000-3-2 standard.
Critical conduction, voltage mode.
Follower boost mode for system cost reduction - smaller inductor and MOSFET can be used.
Inrush current detection.
Protection against overcurrent, overvoltage and undervoltage.
ON Semiconductor advantages:
Very low component count.
No Auxiliary winding required.
High reliability.
Complete semiconductor solution.
Significant system cost reduction.
Devices:
Part Number
MC33260
MUR460
1N5404

Description
Power Factor Controller
Ultrafast Recovery Rectifier (600 V)
General Purpose Rectifier (400 V)

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43

100 F/
450 V

SMPSRM

Application: Monitor Pulsed-Mode SMPS

90 Vac to
270 Vac
22 H

1 nF/1 kV

RFI
FILTER

MR856
1 nF/500 V

4.7 M

1

1 nF/500 V

47 F

120 pF

150 F
400 V

3.9 k/6 W

4.7 k
1N4148

2W

1N4934 MCR22-6

100 nF
1N4934

22 k

SYNC

47 F

Vin

D1 - D4
1N5404

90 V/0.1 A

MR856

47 F
25 V

10

10 pF

47 k

45 V/
1A

15 V/
0.8 A

-10 V/
0.3 A

8 V/
1.5 A

1000 F

MR856

1 H

3.3 k
1.2 k

SMT31

2.2 nF

15

MR852

470 pF
6
MC44605P

4.7 F 2.2 k
11
+
8.2 k
12
22
470
1N4148
nF
k
13
2.2 nF
14
56 k

4.7 F +
10 V

4.7 F+
10 V

560 k
4

150 k
470 pF

MR852

Note 1

220 F

10 
1N4934

1 k

270 
16

1000 F

Lp

1
470 

56 k

MBR360

0.1 

10 k

4700 F
100 

MOC8107
1.8 M

10 k 96.8 k

Vin

100 nF
TL431
2.7 k

1N4742A
12 V

2.7 k

Note 1: 500 V/8 A N-Channel MOSFET

1 k
BC237B

100 nF
VP
FROM P
0: STAND-BY
1: NORMAL MODE

Figure 44. Monitor Pulsed-Mode SMPS

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44

SMPSRM
Features:
Off power consumption: 40 mA drawn from the 8 V output in Burst mode.
Vac (110 V)  about 1 watt
Vac (240 V)  about 3 watts
Efficiency (pout = 85 watts)
Around 77% @ Vac (110 V)
Around 80% @ Vac (240 V)
Maximum Power limitation.
Over-temperature detection.
Winding short circuit detection.
ON Semiconductor Advantages:
Designed around high performance current mode controller.
Built-in latched disabling mode.
Complete semiconductor solution.
Devices:
Part Number
MC44605P
TL431
MR856
MR852
MBR360
BC237B
1N5404
1N4742A
Transformer

Description
High Safety Latched Mode GreenLinet Controller
For (Multi) Synchronized Applications
Programmable Precision Reference
Fast Recovery Rectifier (600 V)
Fast Recovery Rectifier (200 V)
Axial Lead Schottky Rectifier (60 V)
NPN Bipolar Transistor
General-Purpose Rectifier (400 V)
Zener Regulator (12 V, 1 W)
G6351-00 (SMT31M) from Thomson Orega
Primary inductance = 207 H
Area = 190 nH/turns2
Primary turns = 33
Turns (90 V) = 31

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45

SMPSRM

Application: 70 W Wide Mains TV SMPS

95 Vac to
265 Vac
F1
FUSE 1.6 A

C30
100 nF
250 Vac
RFI
FILTER

LF1

C19
1 nF/1 kV

R21
4.7 M

D1-D4
1N4007

C1
220 F

3.8 M
C4-C5
1 nF/1 kV

R7
68 k/1 W

D13
1N4148
C16
100 F

D15
1N4148

9
C8 560 pF
10

C10 1 F
R18

12

5.6 k
R15
1 M

C7
10 nF

13
14

6
MC44603AP

11

5
4

15

D12
MR856 C20
47 F

C12
1 nF

16

L3
22 H
115 V/0.45 A

D23
47 F

15 V/1.5 A
D5
MR854

C21
1000 F

1 k
15 k

11 V/0.5 A

180 k

3
2

R8
1 k

D8
MR854

Q1
600 V/4 A
N-Ch
MOSFET

1
R33
0.31 

C14
220 pF

R13
10 k

Figure 45. 70 W Wide Mains TV SMPS

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46

C22
1000 F

OREGA TRANSFORMER
G6191-00
THOMSON TV COMPONENTS

R9 150

R5
2.2 k
R14
47 k

C26
4.7 nF

C11
100 pF R22

R20 47
R4
3.9 k

C15 220 pF

D7
1N4937

L1
1 H

R19
27 k

C9
100 nF

R3
22 k

R16
68 k/2 W

SMPSRM
Features:
70 W output power from 95 to 265 Vac.
Efficiency
@ 230 Vac = 86%
@ 110 Vac = 84%
Load regulation (115 Vac) =  0.8 V.
Cross regulation (115 Vac) =  0.2 V.
Frequency 20 kHz fully stable.
ON Semiconductor Advantages:
DIP16 or SO16 packaging options for controller.
Meets IEC emi radiation standards.
A narrow supply voltage design (80 W) is also available.
Devices:
Part Number
MC44603AP

Description

MR856
MR854
1N4007
1N4937

Enhanced Mixed Frequency Mode

GreenLinet PWM Controller
Fast Recovery Rectifier (600 V)
Fast Recovery Rectifier (400 V)
General Purpose Rectifier (1000 V)
General Purpose Rectifier (600 V)

Transformer

Thomson Orega SMT18

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47

SMPSRM

Application: Wide Mains 100 W TV SMPS with 1.3 W TV Stand-by

F1
C31
100 nF
47283900 R F6

C19
2N2F-Y

RFI
FILTER

C3
1 nF

R16 4.7 M/4 kV

D1-D4
1N5404

C11
220 pF/500 V
+

C4
1 nF
D5
1N4007
R5 100 k

C5
R1
220 F 22 k
400 V
5W

112 V/0.45 A

12

MC44608P75

Isense

2
3

C7
22 F
16 V

R2
10 
C8
100 nF

600 V/6 A
N-CH
MOSFET

C14 +
1000 F/35 V

10
C16
100 pF

R19
18 k

D13
1N4148

D14
MR856

D10
MR852
9

R17
2.2 k
5W

R4 3.9 k

8 V/1 A

D9 MR852

C9
470 pF
630 V

11

Vcc
6

DZ1
MCR22-6

R12
1 k

C15
1000 F/16 V

C18
100 nF

R3
0.27 
ON

R21 47 

OFF

R9
100 k

OPT1

R11
47 k

DZ3
10 V
1N4740A

C19
33 nF
DZ2
TL431CLP

R10
10 k

R8
2.4 k

Figure 46. Wide Mains 100 W TV SMPS with Secondary

Reconfiguration for 1.3 W TV Stand-by

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48

J3

3
1

7
+

16 V/1.5 A

R7 47 k C17 120 pF

D12
1N4934

C13
100 nF

C12
47 F/250 V

D7
1N4148
1

D18 MR856

C6
47 nF
630 V

D6
MR856

14

ON = Normal mode
OFF = Pulsed mode

J4

SMPSRM
Features:
Off power consumption: 300mW drawn from the 8V output in pulsed mode.
Pin = 1.3W independent of the mains.
Efficiency: 83%
Maximum power limitation.
Over-temperature detection.
Demagnetization detection.
Protection against open loop.
ON Semiconductor Advantages:
Very low component count controller.
Fail safe open feedback loop.
Programmable pulsed-mode power transfer for efficient system stand-by mode.
Stand-by losses independent of the mains value.
Complete semiconductor solution.
Devices:
Part Number

Description

MC44608P75
TL431
MR856
MR852
1N5404
1N4740A

GreenLinet Very High Voltage PWM Controller

Programmable Precision Reference
Fast Recovery Rectifier (600 V)
Fast Recovery Rectifier (200 V)
General Purpose Rectifier (400 V)
Zener Regulator (10 V, 1 W)

Transformer

SMT19 40346-29 (9 slots coil former)

Primary inductance: 181 mH
Nprimary: 40 turns
N 112 V: 40 turns
N 16 V: 6 turns
N 8 V: 3 turns

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49

SMPSRM

Application: Low-Cost Offline IGBT Battery Charger

+

130 to 350 V DC
C3
220 F/
10 V

D1

R1
150

1N4148

C2
220 F/
10 V

D3
R3
220 k

C10
1 nF

R13
100 k

R1

150

1N4148

M1
MMG05N60D

R11
113 k

120 k
C3
10 F/
350 V

R5

IC1
MOC8103

1k
MC14093
R5
1.2 k

+
1

D2
12 V

R9

Q1
MBT3946DW

C9
1 nF

C4
47 nF

470
C5
1 nF

R2
3.9

R9
100

Q5
R10

0V

Figure 47. Low-Cost Offline IGBT Battery Charger

Features:
Universal ac input.
3 Watt capability for charging portable equipment.
Light weight.
Space saving surface mount design.
ON Semiconductor Advantages:
Special-process IGBT (Normal IGBTs will not function properly in this application).
Off the shelf components.
SPICE model available for MC33341.
Devices:
Part Number
MMG05N60D
MC33341
MBT3946DW
MBRS240LT3
MC14093
1N4937

Description
Insulated Gate Bipolar Transistor in SOT-223 Package
Power Supply Battery Charger Regulator Control Circuit
Dual General Purpose (Bipolar) Transistors
Surface Mount Schottky Power Rectifier
Quad 2-Input NAND Schmitt Trigger
General-Purpose Rectifier (600 V)

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50

+
C8
1 F

MC33341

C7
10 F

MBRS240LT3
D5
R2

D4
1N4937

8 V at 400 mA

D4
12 V
R12
20 k

SMPSRM

Application: 110 W Output Flyback SMPS

180 VAC TO 280 VAC

RFI
FILTER

C3
1 nF / 1 KV

R1
1/5W

R3
4.7 k

C4-C7
1 nF / 1000 V

C32
C1
100 F

D1-D4
1N4007

120 V / 0.5 A

C10

820 pF
1 F

R15
10 k

10

11

12
13

C11
1 nF
R16
10 k

R18
27 k

MC44603P

C9

D7
L1
1 H MR856

15

16

R19
10 k

R5
1.2 k

C27
1000 F

R6
180 

C26

220 pF
15 V / 1 A

R10
10 

D10
MR852

R26
1 k

C25
1000 F

C23
R14
2 X 0.56 //

8V/1A
D11
MR852

R17
10 k

R24
270 

R21
C19
10 k 100 nF

C12
6.8 nF

TL431
Note 1: 600 V/ 6 A N-Channel MOSFET

Figure 48. 110 W Output Flyback SMPS

www.onsemi.com
51

C24
0.1 F

220 pF

C21
1000 F

R25
1 k

C28
0.1 F

LP
C14
4.7 nF

R8
15 k

C13
100 nF

220 pF

D9
MR852

Note 1
14

C31
0.1 F

28 V / 1 A

D6
1N4148

C15
1 nF
R7
180 k

C29

C30
100 F

Laux

R9
C16
100 pF 1 k

D8
MR856

C17
47 nF

R4
27 k

R20
22 k
5W

D5
1N4934

C2
220 F
R2
68 k / 2 W

220 pF

C22
0.1 F

R23
117.5 k

D14
1N4733

C20
33 nF
R22
2.5 k

SMPSRM
Features:
Off-line operation from 180 V to 280 Vac mains.
Fixed frquency and stand-by mode.
Automatically changes operating mode based on load requirements.
Precise limiting of maximum power in fixed frequency mode.
ON Semiconductor Advantages:
Built-in protection circuitry for current limitation, overvoltage detection, foldback, demagnetization and softstart.
Reduced frequency in stand-by mode.
Devices:
Part Number
MC44603P
MR856
MR852
TL431
1N4733A
1N4007

Description
Enhanced Mixed Frequency Mode GreenLinet PWM Controller
Fast Recovery Rectifier (600 V)
Fast Recovery Rectifier (200 V)
Programmable Precision Reference
Zener Voltage Regulator Diode (5.1 V)
General Purpose Rectifier (1000 V)

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52

SMPSRM

Application: Efficient Safety Circuit for Electronic Ballast

C13 100 nF

C14 100 nF
AGND

250 V

250 V

C12 22 nF

R18 PTC

C11 4.7 nF
1200 V
PTUBE =
55 W

T1A
FT063

L1 1.6 mH

Q3
MJE18004D2

Q2
MJE18004D2

R14
2.2 R

R13
2.2 R
R11
4.7 R

C9
2.2 nF

C8
2.2 nF

R12
4.7 R

DIAC
C6 10 nF

C7 10 nF

NOTES: * All resistors are 5%, 0.25 W

unless otherwise noted
* All capacitors are Polycarbonate, 63 V,
10%, unless otherwise noted

D4
R10
10 R

T1B
D3 1N4007

T1C
C5 0.22 F

R9
330 k

C4 47 F
+
450 V

R7 1.8 M

P1 20 k
C15 100 nF

D2 MUR180E

Q1
500 V/4 A N-Ch
R6 1.0 R
MOSFET
3

D9
C16
47 nF

R5 1.0 R

630 V
1N5407

AGND
5
+
C2
330 F
25 V

8
R3
100 k/1.0 W
R2 1.2 M

D7
1N5407

U1
MC34262

R4 22 k

D1
MUR120

1N5407

D8

1
2

T2

1N5407

D6

C3 1.0 F

FILTER

C17 47 nF

1
630 V
C1 10 nF
FUSE
LINE
220 V

R1 12 k

Figure 49. Efficient Safety Circuit for Electronic Ballast

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53

SMPSRM
Features:
Easy to implement circuit to avoid thermal runaway when fluorescent lamp does not strike.
ON Semiconductor Advantages:
Power devices do not have to be oversized - lower cost solution.
Includes power factor correction.
Devices:
Part Number

Description

MC34262
MUR120
MJE18004D2
1N4007
1N5240B
1N5407

Power Factor Controller

Ultrafast Rectifier (200 V)
High Voltage Planar Bipolar Power Transistor (100 V)
General Purpose Diode (1000 V)
Zener Voltage Regulator Diode (10 V)
Rectifier (3 A, 800 V)

*Other Lamp Ballast Options:

825 V
100 V
1200 V

1, 2 Lamps

3, 4 Lamps

BUL642D2
MJD18002D2
MJD18202D2

BUL642D2
MJB18004D2
MJB18204D2
MJE18204D2

ON Semiconductor's H2BIP process integrates a diode and bipolar transistor for a single package solution.

www.onsemi.com
54

SMPSRM

Application: AC-DC Battery Charger - Constant Current with

Voltage Limit
T0.2x
J1

D1

F1

250R
1N4140

1N4140

220

D3
4 k
D4

C2 20 F

BZX84/18V

1N4140
R3

Line

VCC

ICD

U1

MC33364
GND
Vref

C3
100 nF

22 k
1N4140

D5

R4

330

C3
FL

R2

+
D2

R5

D7

J2
1
2

C5

MURS320T3

47 k
R6
47 k
C4
1 nF
2
D6

R14
22 k
U2

7 6 5

MURS160T3

VSI

R1

D8 C5 + 4 k
D9
1 F
BZX84/5 V
100 F +

MC33341

Q1
600 V/1 A
N-Ch MOSFET
R7
2.7

GND

10 V

R8
100
T1
6

CMP

C1

10 F/350 V

5V

DO
VCC
CSI

LINE

R4

CTA

CSI

1 2 3 4
C7

1SO1
5

MOC0102
4

R10
100 R

33 nF
R11
0.25

Figure 50. AC-DC Battery Charger - Constant Current with Voltage Limit

Features:
Universal ac input.
9.5 Watt capability for charging portable equipment.
Light weight.
Space saving surface mount design.
ON Semiconductor Advantages:
Off the shelf components
SPICE model available for MC33341
Devices:
Part Number
MC33341
MC33364
MURS160T3
MURS320T3
BZX84C5V1LT1
BZX84/18V
Transformer

R13
12 k

Description
Power Supply Battery Charger Regulator Control Circuit
Critical Conduction SMPS Controller
Surface Mount Ultrafast Rectifier (600 V)
Surface Mount Ultrafast Rectifier (200 V)
Zener Voltage Regulator Diode (5.1 V)
Zener Voltage Regulator Diode (MMSZ18T1)
For details consult AN1600

www.onsemi.com
55

R12
10 k

SMPSRM

Literature Available from ON Semiconductor

Application Notes
These older Application Notes may contain part numbers that are no longer available, but the applications information
may still be helpful in designing an SMPS. They are available through the ON Semiconductor website at
www.onsemi.com.
AN873 - Understanding Power Transistor Dynamic Behavior: dv/dt Effects on Switching RBSOA
AN875 - Power Transistor Safe Operating Area: Special Consideration for Switching Power Supplies
AN913 - Designing with TMOS Power MOSFETs
AN915 - Characterizing Collector-to-Emitter and Drain-to-Source Diodes for Switchmode Applications
AN918 - Paralleling Power MOSFETs in Switching Applications
AN920 - Theory and Applications of the MC34063 and A78S40 Switching Regulator Control Circuits
AN929 - Insuring Reliable Performance from Power MOSFETs
AN952 - Ultrafast Recovery Rectifiers Extend Power Transistor SOA
AN1040 - Mounting Considerations for Power Semiconductors
AN1043 - SPICE Model for TMOS Power MOSFETs
AN1080 - External-Sync Power Supply with Universal Input Voltage Range for Monitors
AN1083 - Basic Thermal Management of Power Semiconductors
AN1090 - Understanding and Predicting Power MOSFET Switching Behavior
AN1320 - 300 Watt, 100 kHz Converter Utilizes Economical Bipolar Planar Power Transistors
AN1327 - Very Wide Input Voltage Range, Off-line Flyback Switching Power Supply
AN1520 - HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications
AN1541 - Introduction to Insulated Gate Bipolar Transistor
AN1542 - Active Inrush Current Limiting Using MOSFETs
AN1543 - Electronic Lamp Ballast Design
AN1547 - A DC to DC Converter for Notebook Computers Using HDTMOS and Synchronous Rectification
AN1570 - Basic Semiconductor Thermal Measurement
AN1576 - Reduce Compact Fluorescent Cost with Motorola's (ON Semiconductor) IGBTs for Lighting
AN1577 - Motorola's (ON Semiconductor) D2 Series Transistors for Fluorescent Converters
AN1593 - Low Cost 1.0 A Current Source for Battery Chargers
AN1594 - Critical Conduction Mode, Flyback Switching Power Supply Using the MC33364
AN1600 - AC-DC Battery Charger - Constant Current with Voltage Limit

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56

SMPSRM

Literature Available from ON Semiconductor (continued)

AN1601 - Efficient Safety Circuit for Electronic Ballast
AN1628 - Understanding Power Transistors Breakdown Parameters
AN1631 - Using PSPICE to Analyze Performance of Power MOSFETs in Step-Down, Switching Regulators
Employing Synchronous Rectification
AN1669 - MC44603 in a 110 W Output SMPS Application
AN1679 - How to Deal with Leakage Elements in Flyback Converters
AN1680 - Design Considerations for Clamping Networks for Very High Voltage Monolithic Off-Line PWM
Controllers
AN1681 - How to Keep a Flyback Switch Mode Supply stable with a Critical-Mode Controller
Brochures and Selector Guides
The following literature is available for downloading from the ON Semiconductor website at www.onsemi.com.
Master Components Selector Guide

SG388/D

Power Conversion Solutions Selector Guide

SGD510/D

Power Supply & Power Adapter Solutions

BRD8063/D

Device Models
Device models for SMPS circuits (MC33363 and MC33365), power transistors, rectifiers and other discrete products
are available through ON Semiconductor's website or by contacting your local sales office.

www.onsemi.com
57

SMPSRM

Reference Books Relating to Switching Power Supply Design

Baliga, B. Jayant,
Power Semiconductor Devices, PWS Publishing Co., Boston, 1996. 624 pages.
Brown, Marty,
Practical Switching Power Supply Design, Academic Press, Harcourt Brace Jovanovich, 1990. 240 pages.
Brown, Marty
Power Supply Cookbook, EDN Series for Design Engineers, ON Semiconductor Series in Solid State Electronics,
Butterworth-Heinmann, MA, 1994. 238 pages
Chrysiss, G. C.,
High Frequency Switching Power Supplies: Theory and Design, Second Edition, McGraw-Hill, 1989. 287 pages
Gottlieb, Irving M.,
Power Supplies, Switching Regulators, Inverters, and Converters, 2nd Edition, TAB Books, 1994. 479 pages.
Kassakian, John G., Martin F. Schlect, and George C. Verghese,
Principles of Power Electronics, Addison-Wesley, 1991. 738 pages.
Lee, Yim-Shu,
Computer-Aided Analysis and Design of Switch-Mode Power Supplies, Marcel Dekker, Inc., NY, 1993
Lenk, John D.,
Simplified Design of Switching Power Supplies, EDN Series for Design Engineers, Butterworth-Heinmann, MA,
1994. 221 pages.
McLyman, C. W. T.,
Designing Magnetic Components for High Frequency DC-DC Converters, KG Magnetics, San Marino, CA, 1993.
433 pages, 146 figures, 32 tables
Mitchell, Daniel,
Small-Signal MathCAD Design Aids, e/j Bloom Associates, 115 Duran Drive, San Rafael, Ca 94903-2317,
415-492-8443, 1992. Computer disk included.
Mohan, Ned, Tore M. Undeland, William P. Robbins,
Power Electronics: Converter, Applications and Design, 2nd Edition, Wiley, 1995. 802 pages
Paice, Derek A.,
Power Electronic Converter Harmonics, Multipulse Methods for Clean Power, IEEE Press, 1995. 224 pages.
Whittington, H. W.,
Switched Mode Power Supplies: Design and Construction, 2nd Edition, Wiley, 1996 224 pages.
Basso, Christophe,
Switch-Mode Power Supply SPICE Cookbook, McGraw-Hill, 2001. CD-ROM included. 255 pages.

www.onsemi.com
58

SMPSRM

Web Locations for Switching-Mode Power Supply Information

Ardem Associates (Dr. R. David Middlebrook)
http://www.ardem.com/
Applied Power Electronics Conference (APEC)
The power electronics conference for the practical aspects of power supplies.
http://www.apec-conf.org/
Dr. Vincent G. Bello's Home Page
SPICE simulation for switching-mode power supplies.
http://www.SpiceSim.com/
e/j BLOOM Associates
(Ed Bloom) Educational Materials & Services for Power Electronics.
http://www.ejbloom.com/
The Darnell Group
(Jeff Shepard) Contains an excellent list of power electronics websites, an extensive list of manufacturer's contact
information and more.
http://www.darnell.com/
Switching-Mode Power Supply Design by Jerrold Foutz
An excellent location for switching mode power supply information and links to other sources.
http://www.smpstech.com/
Institute of Electrical and Electronics Engineers (IEEE)
http://www.ieee.org/
IEEE Power Electronics Society
http://www.pels.org/pels.html
Power Control and Intelligent Motion (PCIM)
Articles from present and past issues.
http://www.pcim.com/
Power Corner
Frank Greenhalgh's Power Corner in EDTN
http://fgl.com/power1.htm
Power Designers
http://www.powerdesigners.com/
Power Quality Assurance Magazine
Articles from present and past issues.
http://powerquality.com/
Power Sources Manufacturers Association
A trade organization for the power sources industry.
http://www.psma.com/
Quantum Power Labs
An excellent hypertext-linked glossary of power electronics terms.
http://www.quantumpower.com/
Ridley Engineering, Inc.
Dr. Ray Ridley
http://www.ridleyengineering.com/

www.onsemi.com
59

SMPSRM

Web Locations for Switching-Mode Power Supply Information

(continued)
Springtime Enterprises - Rudy Severns
Rudy Severns has over 40 years of experience in switching-mode power supply design and static power conversion
for design engineers.
http://www.rudyseverns.com/
TESLAco
Dr. Slobodan Cuk is both chairman of TESLAco and head of the Caltech Power Electronics Group.
http://www.teslaco.com/
Venable Industries
http://www.venableind.com/

www.onsemi.com
60

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