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Journal of Crystal Growth 275 (2005) e2367e2369

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Growth and characterization of gallium nitride nanowire

Vipul Srivastavaa, V. Sureshkumarb, P. Puviarasub, K. Thangarajub,
R. Thangavelb, J. Kumarb,
a

Department of Ceramic Engineering, Banaras Hindu University, Varanasi, India

b
Crystal Growth Centre, Anna University, Chennai-600 025, India
Available online 22 December 2004

Abstract
The present-day trend towards the development of nanostructures has resulted in several interesting material systems
with unique and, in some cases, novel properties. Gallium nitride nanowires and nanodimensional structures have been
realized using a simpler approach of vapour phase-assisted deposition.
GaN nanodimensional structures have been realized on (0 0 0 1) sapphire substrates by suitable surface treatment
procedure using ferrous salt. Growth has been carried out at the substrate temperature of 950 1C. A separate synthesis boat
was kept close to the growth substrate and the reaction of Ga to GaN was made in the close proximity of the substrate.
Experiments were carried out at different growth temperatures and also by varying the proximity conditions of the substrate.
The surface features reveal excellent distribution of nanostructures which are correlated with the growth conditions.
r 2004 Elsevier B.V. All rights reserved.
PACS: 81.05.Ea; 81.10.Bk; 81.07.De; 81.15.Gh; 97.64.Dz
Keywords: B1. Boron trioxide; B1. Gallium; B1. Gallium nitride (GAN); B1. Ferrous sulphate

1. Introduction
Gallium nitride is one of the most promising
semiconductors for optical devices in the blue to
ultraviolet region [1]. GaN nanomaterials have
interesting and potentially important applications
as exemplary materials to new theoretical concepts
and for practical applications [2]. The promise of
UV photoconducting devices for optical/electronic
nanoscale switching devices has been fullled.
Corresponding author. Tel./fax: +91 44 235 2774.

E-mail address: marsjk@annauniv.edu (J. Kumar).

Such devices would be wonderful test beds for

studying quantum effects in one-dimensional
structures. On the other hand, the growth of
larger diameter rods could be very useful for
optical devices and electronic applications [3].

2. Experiment
Nanowire synthesis has been reported by He
et al. [4]. One gram of pure metal gallium, 1 g of
gallium nitride powder and 10 g of B2O3 are mixed

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doi:10.1016/j.jcrysgro.2004.11.338

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V. Srivastava et al. / Journal of Crystal Growth 275 (2005) e2367e2369

temperature of 950 1C, and the growth was carried

out for 1 h. At 32.4, 36.9, 48.2, 57.9 (2y values) we
obtained the XRD peak corresponding to gallium
nitride.
From these 2y values the lattice parameter was
calculated as a 3.1852 A and c 5.1874 A,
which are in good agreement with the already
reported values [3]. Gallium nitride has crystallized
in the hexagonal structure. Fig. 2 shows the XRD
spectrum of gallium nitride nanowire sample

Intensity

in an alumina boat and it was placed in a quartz

reactor. The quartz reactor is kept inside the
double zone furnace. Sapphire (0 0 0 1) substrate
was initially cleaned using ferrous sulphate and
placed near the alumina boat. The furnace was
heated to 950 1C. Nitrogen gas was allowed to ow
over the gallium surface from the start of the
experiment. After reaching a temperature of
950 1C, liquid ammonia was placed in a bubbler
across the nitrogen gas tube from the inlet of the
quartz reactor. Nitrogen gas was used as the
carrier gas to allow the ammonia molecule into the
reaction zone. The outgoing ammonia was passed
through a bubbler containing dilute sulphuric acid
in order to neutralize the outlet gas species before
they were released into the atmosphere [3].

3. Results and discussions

Once the temperature in the system exceeds
30 1C, the solid gallium metal becomes liquid and
begins to diffuse over the surface of the alumina
boat. At higher temperatures, the gallium vapour
pressure becomes signicant. During growth, some
NH3 molecules adsorbed on the gallium surface
dissociate into N atoms and react with gallium to
form GaN molecules on the sapphire substrate [5].
N atoms can also recombine into N2 gas which will
desorb. Fig. 1 shows the XRD pattern of gallium
nitride nanowire sample grown at the substrate

2
(102)

e2368

0
10

20

30

40
2 Theta

50

60

Fig. 2. XRD spectrum of gallium nitride nanowire grown at

950 1C (growth duration is 2 h).

(110)

(102)

(100)

(101)

Intensity

0
10

20

30
40
2 theta

50

60

Fig. 1. XRD spectrum of gallium nitride nanowire grown at

950 1C (growth duration is 1 h).

Fig. 3. AFM analysis of GaN nanowire grown at temperature

950 1C (magnication is 1.084 mm).

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V. Srivastava et al. / Journal of Crystal Growth 275 (2005) e2367e2369

e2369

Fig. 5. AFM analysis of GaN nanowire grown at temperature

950 1C (magnication is 213.50 nm).

Fig. 4. AFM analysis of GaN nanowire grown at temperature

950 1C (magnication is 282.58 nm).

4. Conclusions
Gallium nitride nanowire was successfully
grown using a simpler technique and was characterized using XRD and AFM.

grown at a temperature of 950 1C and the growth

was carried out for 2 h.
AFM analysis was carried out on the gallium
nitride nanowire sample grown at a temperature of
950 1C for 1 h. Fig. 3 shows the AFM image of
gallium nitride nanowire. From this gure, we
observed some surface irregularity. The dimension
of the nanowire varies depending upon the
ammonia ow rate. Figs. 4 and 5 are the AFM
images of GaN nanowires. From these gures the
length of the GaN nanowire is found to be
2000 nm and the width is 40 nm.

References
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