PD-95438A

IRF1503PbF
Typical Applications

HEXFET Power MOSFET

l Industrial Motor Drive

VDSS = 30V

Features
l
l
l
l
l

Advanced Process Technology

Ultra Low On-Resistance
175C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

RDS(on) = 3.3m

ID = 75A

Description
This design of HEXFET Power MOSFETs utilizes
the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features
of this HEXFET power MOSFET are a 175C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
TO-220AB

Absolute Maximum Ratings

Parameter
ID @ TC = 25C
ID @ TC = 100C
ID @ TC = 25C
IDM
PD @TC = 25C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG

Max.

Continuous Drain Current, VGS @ 10V (Silicon limited)

Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds

Units

240
170
75
960
330
2.2
20
510
980
See Fig.12a, 12b, 15, 16

W
W/C
V
mJ
A
mJ

-55 to + 175
C
300 (1.6mm from case )

Thermal Resistance
Parameter
RJC
RCS
RJA

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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

0.50

0.45

62

C/W

1
07/14/10

IRF1503PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

RDS(on)
VGS(th)
gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

Qg
Qgs
Qgd
td(on)
tr
td(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
30

2.0
75

Typ.

0.028
2.6

130
36
41
17
130
59
48

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

5.0

LS

Internal Source Inductance

13

Ciss
Coss
Crss
Coss
Coss
Coss eff.

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance

5730
2250
290
7580
2290
3420

V(BR)DSS
V(BR)DSS/TJ

IGSS

Max. Units
Conditions

V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
3.3
m VGS = 10V, ID = 140A
4.0
V
VDS = 10V, ID = 250A

S
VDS = 25V, ID = 140A
20
VDS = 30V, VGS = 0V
A
250
VDS = 30V, VGS = 0V, TJ = 125C
200
VGS = 20V
nA
-200
VGS = -20V
200
ID = 140A
54
nC
VDS = 24V
62
VGS = 10V

VDD = 15V

ID = 140A
ns

RG = 2.5

VGS = 10V
D
Between lead,

6mm (0.25in.)
nH
G
from package

and center of die contact

S

VGS = 0V

pF
VDS = 25V

= 1.0MHz, See Fig. 5

VGS = 0V, VDS = 1.0V, = 1.0MHz

VGS = 0V, VDS = 24V, = 1.0MHz

VGS = 0V, VDS = 0V to 24V

Source-Drain Ratings and Characteristics

IS
ISM

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

VSD
trr
Qrr
ton
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25C, L = 0.049mH
RG = 25, IAS = 140A. (See Figure 12).
Pulse width 400s; duty cycle 2%.

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
240
showing the
A
G
integral reverse
960
S
p-n junction diode.
1.3
V
TJ = 25C, IS = 140A, VGS = 0V
71 110
ns
TJ = 25C, IF = 140A, VDD = 15V
110 170
nC di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.

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IRF1503PbF
1000

1000

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

100

TOP

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

TOP

4.5V
10

20s PULSE WIDTH

Tj = 25C
1

100

4.5V

20s PULSE WIDTH

Tj = 175C

10
0.1

10

100

0.1

VDS, Drain-to-Source Voltage (V)

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

200

1000

Gfs, Forward Transconductance (S)

T J = 25C

ID, Drain-to-Source Current ()

10

T J = 175C

100

VDS = 25V
20s PULSE WIDTH

10
4.0

5.0

6.0

7.0

8.0

9.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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T J = 175C
160

120

TJ = 25C

80

40

VDS = 25V
20s PULSE WIDTH

0
10.0

40

80

120

160

200

ID, Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

Vs. Drain Current

IRF1503PbF
10000

Crss
Coss

ID= 140A

VGS , Gate-to-Source Voltage (V)

8000

C, Capacitance (pF)

20

VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
= Cgd
= Cds + Cgd

Ciss

6000

4000

Coss
2000

Crss

16

12

0
1

10

100

10000

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

1000.0

100.0
T J = 175C
10.0

T J = 25C
VGS = 0V

0.1
0.0

0.4

0.8

1.2

80

120

160

200

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1.6

VSD, Source-toDrain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

40

Q G Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

1.0

VDS= 24V

1000

100sec

100

1msec
10

2.0

OPERATION IN THIS AREA

LIMITED BY RDS(on)

10msec

Tc = 25C
Tj = 175C
Single Pulse
1

10

100

VDS , Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

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IRF1503PbF
2.0

240

I D = 240A

LIMITED BY PACKAGE

160

120

80

40

0
25

50

75

100

125

TC , Case Temperature

150

1.5

(Normalized)

RDS(on) , Drain-to-Source On Resistance

ID , Drain Current (A)

200

1.0

0.5

V GS = 10V

0.0
-60

175

-40

-20

20

40

60

80

100 120 140 160 180

( C)

TJ, Junction Temperature

( C)

Fig 10. Normalized On-Resistance

Vs. Temperature

Fig 9. Maximum Drain Current Vs.

Case Temperature

(Z thJC)

D = 0.50

0.1

0.20

Thermal Response

0.10
0.05
0.02
0.01

SINGLE PULSE
(THERMAL RESPONSE)

P DM

0.01

t1
t2
Notes:
1. Duty factor D =
2. Peak T

0.001
0.00001

0.0001

0.001

t1/ t 2

J = P DM x Z thJC

+T C

0.01

0.1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1503PbF
1000

ID

15V

TOP

20V
VGS

+
V
- DD

IAS

0.01

tp

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
tp

EAS , Single Pulse Avalanche Energy (mJ)

D.U.T

RG

800

DRIVER

VDS

59A
100A
140A

BOTTOM

600

400

200

0
25

50

75

100

125

Starting T , JJunction Temperature

I AS

150

175

( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

QG
QGS

QGD

4.0

VG

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator
Same Type as D.U.T.

50K
12V

.2F
.3F

D.U.T.

+
V
- DS

VGS

VGS(th) Gate threshold Voltage (V)

10 V

3.0

ID = 250A

2.0

1.0
-75 -50 -25

25

50

75 100 125 150 175 200

T J , Temperature ( C )

3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 14. Threshold Voltage Vs. Temperature

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IRF1503PbF
10000

Avalanche Current (A)

Duty Cycle = Single Pulse

1000

Allowed avalanche Current vs

avalanche pulsewidth, tav
assuming Tj = 25C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax

0.01
100

0.05
0.10
10

1
1.0E-07

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

EAR , Avalanche Energy (mJ)

600

TOP
Single Pulse
BOTTOM 50% Duty Cycle
ID = 140A

500

400

300

200

100

0
25

50

75

100

125

150

Starting T J , Junction Temperature (C)

Fig 16. Maximum Avalanche Energy

Vs. Temperature

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Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC
Iav = 2DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav

IRF1503PbF
D.U.T

Driver Gate Drive

D.U.T. ISD Waveform

Reverse
Recovery
Current

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

P.W.
Period

RG

D=

VGS=10V

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

Period

P.W.

VDD

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
ISD

Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs

VDS
VGS
RG

RD

D.U.T.
+

-V DD

10V
Pulse Width 1 s
Duty Factor 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on)

tr

t d(off)

tf

Fig 18b. Switching Time Waveforms

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IRF1503PbF
TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

E XAMP L E : T H IS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 2000
IN T H E AS S E MB L Y L INE "C"
Note: "P " in as s embly line pos ition
indicates "L ead - F ree"

INT E R NAT IONAL

R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE

P AR T NU MB E R

DAT E CODE
YE AR 0 = 2000
WE E K 19
L INE C

TO-220AB package is not recommended for Surface Mount Application.

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010

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