Beruflich Dokumente
Kultur Dokumente
Insulated Cables
Bjrn Gustavsen
SINTEF Energy Research
N-7465 Trondheim, Norway
bjorn.gustavsen@energy.sintef.no
Keywords: Electromagnetic
Modeling, EMTP.
Transients,
Insulated
Cables,
I. INTRODUCTION
The modeling of insulated cables for the simulation of electromagnetic
transients requires
1) Calculation of cable parameters from geometrical data and material
properties [1],[2].
2) Conversion of the cable parameters into a new set of parameters
for usage by the transmission line/cable model.
Z () = R() + jL ()
(1)
Y () = G () + jC()
(2)
This paper deals with the first step in the procedure, namely the
calculation of cable parameters. All the commonly used programs for
simulation of electromagnetic transients (EMTP/ATP/EMTDC) have
dedicated support routines for this task. The routine(s) have very
similar features and will in this presentation be given the common
generic name Cable Constants (CC).
Data conversion is often needed by the user in order to bring the
available cable data into a form which can be used as input by CC. This
conversion is needed because
1) The data can have alternative representations with CC only
supporting one of the representations.
2) The CC routine does not consider certain cable features, such as
semiconducting screens and wire screens.
air
soil
g , g
r4
r3
c, c
core
sheath
r1
r2
1
s , s
V. CONVERSION PROCEDURES
A. Core
c = c
r12
Ac
(5)
where Ac is the efficient (nominal) cross sectional area of the core. The
resistivity c for to be used for annealed copper and hard drawn
aluminum at 20C is according to IEC 28 and IEC 889:
Copper:
1.7241E-8 m
Aluminum
2.8264E-8 m
Inner semiconductor
Outer semiconductor
Wire screen
Core
Insulation
C ln(r2 / r1 )
2 0
(7)
(4)
r1 = r ins
ln(r2 / r1 )
ln(b / a )
(8)
where a and b are the insulation inner and outer radius, respectively.
For XLPE rins equals 2.3.
The CC-routine takes into account the frequency dependent skin effect
in the conductors, but neglects the proximity effect between parallel
2
Justification
The inner and outer semiconducting screens have a relative permittivity
of the order of 1000, due to the high carbon content used in the
semiconducting screens. This implies that the capacitance of the
screens is much higher than that of the insulation and will tend to act as
a short circuit when calculating the shunt admittance between core and
sheath. A similar effect is caused by the ohmic conductivity of the
semiconducting screens, which is required by norm to be higher than
1E-3 S/m.
At the same time the conductivity of the semiconducting screens is
much lower than that of the core and the sheath conductors, implying
that the semiconducting screens do not contribute to the longitudinal
current conduction.
This implies that when entering the geometrical data in CC, the
user should let the XPLE insulation extend to the surface of the core
conductor and the sheath conductor, and increase the relative
permittivity to leave the capacitance unaltered. Note that this modeling
neglects the possible attenuation caused by the semiconducting
screens. The attenuation could have a strong impact on very high
frequency transients. This is discussed in Section X.
c = 3. 4643 10 8 /m
Insulation and insulation screens
r2 = r1 + (0 .8 + 14 + 0. 4) = 34 .7 mm
r 1 = 2 .486 (by (7))
Wire screen
The outer radius is calculated using (9):
r3 = 34 . 93 mm
s = 1 .718 E 8 /m (copper)
C. Wire screen
As
+ r22
The relevant cable norms (e.g. IEC 840, IEC 60502) puts limitations on
the minimum thickness of each cable layer (in relation to the nominal
thickness), but not on the maximum thickness. Therefore, the
manufacturer is free to use thicker layers than the nominal ones, e.g. to
account for dispersity in production and ageig effects. This situation is
prevalent for both the main insulation, the oversheath, and the
semiconducting screens.
By measurement on a specimen of the 66 kV cable it was found
that the insulation and in particular the semiconducting screens were
thicker than stated in the data sheets :
Thickness of inner insulation screen: 1.5 mm
(9)
Ac = 1000 mm2
C = 0 .24 nF/m
R DC = 2 .9 E 5 /m
r1 = 19 .5 mm
Thickness of inner insulation screen: 0.8 mm
r2 = 37 .8 mm
Thickness of insulation: 14 mm
2 0 r
ln(b / a )
(10)
3
VIII. SENSITIVITY
the surge admittance of the cable core-sheath loop, which is the inverse
of the surge impedance.
The inrush current was also simulated using EMTDC v3 with a
phase domain cable model [5],[6]. The CC routine was applied for the
three different cases defined in Section VIII. It is seen that using the
cable representation in case #3 gives a calculated response which is in
fairly close agreement with the measured response. The two other
representations have a much larger discrepancy. (The spike occurring
at about 50 s resulted because of long leads connecting the two cable
sections).
(11)
Zc =
L0 / C
(12)
ln(r2 / r1 )
(13)
where
L0 =
0
2
with 0 = 4 E 7
We will now compare the asymptotic propagation characteristics
as calculated by the following procedures:
Case #1:
Neglecting the semiconducting screens. Capacitance and inductance
calculated using (10) and (13) with a=r1=19.5 mm, b=r2=33.5 mm, and
r1=2.3.
Case #2:
Taking the semiconducting screens into account. Capacitance and
geometrical data from the manufacturer: r1=19.5 mm, r2=34.7 mm, and
r1=2.486.
Case #3:
Taking the semiconducting screens into account. Capacitance from the
manufacturer, geometrical data from cable specimen: r1=19.5 mm,
r2=37.8 mm, and r1=2.856.
Using the inductance calculated from (12), the velocity and
characteristic impedance are calculated as:
case #2
case #3
v [m/s]
197.7
190.1 (-3.8%)
177.4 (-10.3%))
Zc []
21.39
21.91 (+2.4%)
23.49 (+9.8%)
Reference [3] suggests to model the admittance between the core and
the sheath using the circuit in Figure 5, in which each semiconducting
screen is modeled by a conductance in parallel with a capacitor. With
component values obtained from measurements, they obtained a good
agreement between measured attenuation and calculated attenuation in
the range 1 MHz125 MHz. The attenuation effect of the
semiconducting screens was strong.
Reference [4] gives a systematic investigation of the effects of
semiconducting screens on propagation characteristics.
core
2.2 km
G1
15 m
Y
Negative
step voltage
C1
Main insulation
C
G2
C2
sheath
Figure 4 shows the measured initial inrush current flowing into the core
conductor in p.u. of the DC-voltage. The initial current corresponds to
4
XI. DISCUSSION
the carbon, and the type of base polymer. Very high carbon
concentrations are used (e.g. 35%). IEC 840 requires the resistivity to
be lower than 1000 m for the inner screen, and below 500 m for
the outer screen. One manufacturer stated that they use a much lower
resistivity, typically 0.1 m10 m. The relative permittivity is
very high, typically of the order of 1000. The permittivity and
conductivity can be strongly frequency dependent.
In order to investigate the possible attenuation effects of the
insulation screens of the cable considered in this paper, a
representation as in Figure 5 was employed assuming frequency
independent conductances and capacitances. The component values
were calculated as follows:
C = 0. 24 nF / m (from manufacturer)
C1 = 20 r / ln(r2 / b)
C 2 = 2 0 r / ln(a / r1 )
G1 = 2 / ln(r2 / b )
G 2 = 2 / ln(a / r1 )
where
a:
b:
r :
:
XIV. BIOGRAPHY
5
INPUT:
C
=0.24e-9;
Acore =1000e-6;
Asheath=50e-6;
tins
=14e-3;
tins1 =0.8e-3;
tins2 =0.4e-3;
r1
=19.5e-3;
RDC
=2.9e-5;
eps0
=8.854e-12;
OUTPUT:
rhoc=RDC*pi*r1^2
r2=r1+tins1+tins+tins2;
r3=sqrt(Asheath/pi+r2^2);
epsr1=C*log(r2/r1)/(2*pi*eps0);
%core resistivity
%sheath inner radius
%sheath outer radius
%effective rel. permittivity
%of core sheath layer