Thin Film Evaporation Material Source Reference

Temp (C) at Vap.

Press.
Melting
Density
Point (C) (g/cm3)

10-8
Torr

10-6
Torr

10-4
Torr

Electron
Beam

Crucible

Coil

Boat

Remarks
(n = index
of refraction)

677

821

1010

Xlnt.

TiB2-BN
ZrB2
BN

TiB2
W

Alloys and wets;

tungsten-stranded superior

Name

Symbol

Aluminum

Al

660

2.7

AlSb

1080

4.3

AlAs

1600

3.7

~1300

AlBr3

97

3.01

~50

Al4C3

1400

2.36

~800

Al2%Cu

640

2.82

AlF3

1257
Subl.

3.07

AlN

Subl.

Al2O3
Al2%Si

Aluminum
Antimonide
Aluminum
Arsenide
Aluminum
Bromide
Aluminum
Carbide
Aluminum
2% Copper
Aluminum
Fluoride
Aluminum
Nitride
Aluminum
Oxide
(alumina)
Alumnium
2% Silicon

Evaporation
Techniques

Graphite
Fair

n=2.7
Wire feed and flash. Difficult from dual sources.

700
Subl.

Poor

3.26

~1750

Fair

2045

3.97

1550

Xlnt.

640

2.69

1010

TiB2-BN

425
Subl.

BN
C
Al2O3

Antimony

Sb

630

6.68

Antimony
Telluride

Sb2Te3

619

6.5

Antimony
Trioxide

Sb2O3

656

5.2
or
5.76

Antimony
Triselenide

Sb2Se3

611

Mo

410
490
Subl. Subl.

279
345
Subl. Subl.

Poor

600
Subl. Subl.

~300
Subl.

Graphite

Mo, W

Decomposes. Reactice evaporate in 10-3 N2 with glow discharge.

W

Sapphire xlnt in EB, forms smooth hard films. N=1.66

Wire feed and flash. Difficult from dual sources.

Mo
Ta

Mo
Ta
Al2O3
Coated

Carbon
Good

n=1.38 at 0.55

Toxic. Evaporates well. Film structure is rate-dependent.

Decomposes over 750 degrees C.

BN
Al2O3

Pt

Toxic. Decomposes on W. n=2.05

Carbon

Ta

Stoichiometry variable.

Antimony
Trisulphide

Sb2S3

550

4.64

Arsenic

As

814

5.73

As2Se3

360

4.75

As2S3

300

3.43

As2Te3

362

Ba

710

3.78

BaCl2

962

3.86

BaF2

1280

4.83

Barium
Oxide

BaO

1923

Barium
Sulphide

BaS

Barium
Titanate
Beryllium

Arsenic
Selenide
Arsenic
Trisulphide
Arsenic
Telluride
Barium
Barium
Chloride
Barium
Fluoride

Beryllium
Chloride
Beryllium
Fluoride
Beryllium
Oxide

150
107
Subl. Subl.

~200

Good

210
Subl.

Poor

~400

Fair

Al2O3
Al2O3
BeO
Vit. Carbon
Al2O3
Quartz
Al2O3
Quartz

Mo
Ta

n=3.01 at 0.55. No decomposition.

Toxic. Sublimes rapidly at low temperature.

n=2.41 at 3.8.

Mo

n=2.8

Flash
545

627

735

Fair

Good

5.72
or
5.32

~1300

Poor

2200

4.25

1100

BaTiO3

Decomposes

Dec.

Dec.

Dec.

Be

1278

1.85

710

878

1000

BeCl2

440

1.9

BeF2

800

1.99

BeO

2530

3.01

Bi

271

9.8

Bismuth
Fluoride

BiF3

727

8.75

~650
~700
Subl.

Bismuth

Metals

Subl. Subl.

Al2O3

W
Ta
Mo

Wets w/o alloying - reacts with ceramics

Ta, Mo

Use gentle preheat to outgas

Mo

n=1.29 at 5. Density Rate Dependent.

Pt

Decomposes slightly. n=1.98

Mo

n=2.16
Decomposes, yields free Ba from single source;
sputtering preferred;
or co-evaporate from 2 sources

Xlnt.

BeO
C
Vit. Carbon

W
Ta

Wets W/Mo/Ta. Metal powder and oxides are toxic.

Evaporates easily.

~150
Subl. Subl.

330

410

Subl. Subl.

~200
Subl.

Good

Toxic.

1900

Good

Powders toxic. No decomposition from EB guns. n=1.72

520
~300
Subl.

Xlnt.

Al2O3
Vit. Carbon
Graphite

W
Mo
Al2O3
Ta

Vapors are toxic. High Resistivity. No shorting of baskets.

n=1.74 at 1. 1.64 at 10

Bismuth
Oxide
Bismuth
Selenide
Bismuth
Telluride
Bismuth
Titanate
Bismuth
Trisulphide

Bi2O3

820

8.9

~1400

Poor

Bi2Se3

710

7.66

~650

Good

Bi2Te3

585

7.85

~600

Bi2Ti2O7

Dec.

Dec.

Pt
Graphite
Quartz
Graphite
Quartz

Vapors are toxic. n=2.55

Sputtering preferred; or co-evaporate from 2 sources.

W
Mo

Sputtering preferred; or co-evaporate from 2 sources.

Decomposes. Sputtering preferred; or co-evaporate from 2
sources in 10-2O2

Dec.

Bi2S3

685

7.39

Boron

2100

2.36

1278 1548
Subl. Subl.

1797
Subl.

Xlnt.

Boron
Carbide

B4C

2350

2.5

2500

2580

2650

Xlnt.

Similar to chromium.

Boron
Nitride

BN

2300

2.2

Subl. Subl.

~1600
Subl.

Poor

Sputtering preferred; Decomposes.

B2O3

460

1.82

~1400

Good

B2S3

310

1.55

800

Graphite

180

Al2O3
Quartz

Boron
Oxide
Boron
Trisulphide
Cadmium
Cadmium
Antimonide
Cadmium
Arsenide
Cadmium
Bromide
Cadmium
Chloride
Cadmium
Fluoride
Cadmium
Iodide
Cadmium
Oxide
Cadmium
Selenide

n = 1.5 (approx.)

Cd

321

8.64

64

120

CdSb

456

6.92

Cd3As2

721

6.21

CdBr2

567

5.19

~300

CdCl2

570

4.05

~400

CdF2

1070

6.64

~500

CdI2

400

5.3

~250

CdO

900

6.95

~530

CdSe

1264

5.81

Poor

C
Vit. Carbon

Material explodes with rapid cooling.

Forms carbide with container.

Pt
Mo

n=1.46

W
Cb
Mo
Ta

Poisons vacuum systems, low sticking coefficient

Quartz

Subl. Subl.

540
Subl.

n=1.56

Disproportionates. n=2.49
Good

Al2O3
Quartz

Mo
Ta

Evaporates easily. n=2.4 at 0.6

Cadmium
Silicide

CdSiO2

Cadmium
Sulphide

CdS

1750

4.82

Cadmium
Telluride

CdTe

1098

6.2

Calcium

Ca

842

1.55

Calcium
Fluoride

CaF2

1360

CaO

~600
Subl. Subl.

550
Subl.

n=1.69
Fair

W
Mo
Ta

Sticking coefficient strongly affected by substrate temperature.

n=2.4, JVST 12, 188 (1975)

W
Mo
Ta

Stoichiometry depends on substrate temperature. n=2.6

Corrodes in air.

Al2O3
Quartz

450
459
Subl.

Poor

Al2O3
Quartz

3.18

~1100

Xlnt.

Quartz

W
Mo
Ta

2580

3.35

~1700

W
Mo
Ta
W
Mo

CaO-SiO2

1540

2.9

CaS

Subl.

2.18

CaTiO3

1975

4.1

CaWO4

1620

6.06

Carbon

Subl.

1.8 - 2.3

Cerium

Ce

795

8.23

Ceric
Oxide

CeO2

2600

7.3

Cerium
Fluoride

CeF3

1418

6.16

Ce2O3

1692

6.87

Cs

28

1.87

CsBr

636

4.44

~400

n=1.70

CsCl

646

3.97

~500

n=1.64 Hygroscopic

CsF

684

3.59

~500

Calcium
Oxide
Calcium
Silicate
Calcium
Sulphide
Calcium
Titanate
Calcium
Tungstate

Cerium
Oxide
Cesium
Cesium
Bromide
Cesium
Chloride
Cesium
Fluoride

272
357
Subl. Subl.

ZrO2
Good

Quartz

1600

1690

Mo
Poor

2137
Subl.

Xlnt.

1150

1380

Good

1890 2000
Subl. Subl.

2310
Subl.
~900

970

-16

22

30

Decomposes. n=2.14
Disproportionates except in sputtering.

Good
1657 1867
Subl. Subl.

Forms volatile oxides with W and Mo. n=1.84

n=1.61

1100
1490

Rate control important. Use gentle preheat to outgas. n=1.2 - 1.4

n=1.92
EB preferred. Arc evaporation. Poor film adhesion.
Vitreous carbon n=1.47

Al2O3
BeO
Vit. Carbon

W
Ta

Films oxidize easily.

Good

Use 250-300 C substrate temperature. n=2.2-2.4.

Reacts with W.

Good

W
Mo
Ta

Use gentle preheat to outgas. n=1.63 at 0.55

Fair

Alloys with source; use 0.015-0.020 W boat. n=1.95

Quartz

S.S.

Cesium
Hydroxide
Cesium
Iodide

CsOH

272

3.67

550

CsI

621

4.51

~500

2.9

~800

Chiolote

Na5Al3F14

Chromium

Cr

1890

7.2

CrB

2760

6.17

CrB2

842

4.36

550

Cr3C2

1890

6.68

~2000

CrCl2

824

2.75

550

Cr2O3

2435

5.21

~2000

Cr3Si

1710

6.51

Chromium
Boride
Chromium
Bromide
Chromium
Carbide
Chromium
Chloride
Chromium
Oxide
Chromium
Silicide
Chromium
Silicon
Monoxide
Cobalt
Cobalt
Bromide
Cobalt
Chloride
Cobalt
Oxide
Copper

837
977
Subl. Subl.

1157
Subl.

Influenced by composition

Cr-SiO
Co

1495

8.9

CoBr2

678

4.91

Subl. Subl.

CoCl2

740

3.36

Subl. Subl.

CoO

1935

5.68

Cu

1083

8.92

Copper
Chloride
Copper
Oxide
Copper
Sulphide

CuCl

422

3.53

Cu2O

1235

CuS

1113

6.75

Cryolite

Na3AlF6

1000

2.9

850

990

1200

Pt
Pt
Quartz

Good

Vit. Carbon

W
Pt
Mo
W
Cr-plated
rod or
strip

n=1.79
n=1.33
Films very adherent. High rates possible.

Inconel
Fair

W
Fe
Inconel

Sublimes easily.

Good

W, Mo

Disproportionates to lower oxides,

reoxidizes at 600 C in air. n=2.4

Good

Flash.

W
Cb

Alloys with refractory metals.

Xlnt.

Al2O3
BeO

400
Subl.
472
Subl.

Inconel
Inconel
Sputtering preferred.

727

857

1017

Xlnt.

Al2O3
Mo, Ta

Mo

~600

Subl. Subl.

~600
Subl.
~500
Subl.

1020

1480

Subl. Subl.

1260

Films do not adhere well. Use intermediate layer, e.g.

chromium. Evaporates from any source materials.
n=1.93

Good

Al2O3

Ta

Evaporate in 10-2 - 10-4 of O2; n=2.70

J. Electrochem. Soc. 110, 119 (1967)
n=1.45

Xlnt.

Vit. Carbon

W, Mo, Ta

Large chunks reduce spitting. Little decomposition.

n=2.34 at 6330A.

Dysprosium
Dysprosium
Fluoride
Dysprosium
Oxide
Erbium
Erbium
Fluoride
Erbium
Oxide
Europium
Europium
Fluoride
Europium
Oxide
Europium
Sulphide
Gadolinium
Gadolinium
Oxide

Dy

1409

DyF3

1360

Dy2O3

2340

7.81

Er

1497

9.06

ErF3

1350

7.81

~750

Mo

Er2O3

2400

8.64

~1600

Ir

Loses oxygen.

Eu

822

5.26

W, Ta

Low tantalum solubility.

EuF2

1380

6.5

~950

Eu2O3

2056

7.42

~1600

EuS

8.54

625

750

Subl. Subl.

900
~800
Subl.

Good

Ta

Good

Ta

~1400
650
775
Subl. Subl.

280
360
Subl. Subl.

930
Subl.

480
Subl.

5.75

Ir
Good

Fair

Good

7.89

Gd2O3

2310

7.41

Ga

30

5.9

GaSb

710

5.6

Fair

GaAs

1238

5.3

Good

GaN

Subl.

6.1

Gallium Oxide

Ga2O3

1900

5.88

Gallium
Phosphide

GaP

1540

4.1

Germanium

Ge

937

5.35

Ge3N2

450

5.2

GeO2

1086

6.24

Germanium
Nitride
Germanium
Oxide

Al2O3

ThO2

Ir, Ta, W

Loses oxygen; films clear and hard.

Al2O3

Ta

High Ta solubility.

Ir

Loses oxygen. n=1.8 at 0.55

Good

1312

Gallium
Antimonide
Gallium
Arsenide
Gallium
Nitride

W, Ta

Mo

Gd

Gallium

Loses oxygen.

760

900

1175

Xlnt.
Fair

619

742

907

Good

920

957

1167

Subl. Subl.

~650
Subl.

812

~625

Carbon

Alloys with refractory metals. Use EB gun.

W, Ta

Flash evaporate.

W, Ta

Flash evaporate. n=5.64 at 10.6

Evaporate Ga in 10-3 N2.

Al2O3

~200

770

Al2O3
BeO
Quartz

Xlnt.

Pr, W

Loses oxygen.

Quartz

W, Ta

Decomposes vapor mostly P.

Quartz
Al2O3

W, C, Ta

Excellent filsm from EB sources. Use 0.040 W. n=4.01

Sputtering preferred.

Good

Quartz
Al2O3

Ta, Mo

Similar to SiO, film predominantly GeO.

Germanium
Telluride
Glass, Schott
8329

GeTe

725

6.2
2.2

Gold

Au

1062

19.32

Hafnium
Hafnium
Boride

Hf

2230

13.09

HfB2

3250

10.5

HfC

4160

12.2

Hafnium
Carbide

807

947

1132

Xlnt.

2160 2250 3090

Good

Subl. Subl.

HfN

2852

13.8

HfO2

2812

9.68

HfSi2

1750

7.2

Holmium

Ho

1470

8.8

HoF3

1143

7.64

Ho2O3

2370

8.41

Inconel

Ni/Cr/Fe

1425

8.5

Indium

In

157

7.3

487

InSb

535

5.8

500

InAs

943

5.7

780

In2O3

1565

7.18

Subl. Subl.

InP

1058

4.8

630

In2Se3

890

5.7

Indium
Antimonide
Indium
Arsenide
Indium Oxide
Indium
Phosphide
Indium
Selenide

W, Mo

Xlnt.

Hafnium
Nitride
Hafnium
Oxide
Hafnium
Silicide

Holmium
Fluoride
Holmium
Oxide

Quartz
Al2O3

381

650
770
Subl. Subl.

Evaporable alkali glass. Melt in air before evaporating. N=1.47

Al2O3
BN
Vit. Carbon

~2500

Fair

950
Subl.

Good

Films soft, not very adherent.

Film HfO n=2.0 at 0.5

742

W, Ta

Quartz

Good

870

W, Mo
Coated
Al2O3

~2600
Subl.

~800

597

Xlnt.;
Mo Liner
req'd

Graphite
Al2O3

Ir

Loses oxygen.

Use fnie wire pre-wrapped on W. Low rate req'd for

smooth films.

W, Mo

Wets W and Cu; use Mo liner in guns.

~400

970

~1200
Subl.
730

Good

Toxic, Decomposes; sputtering preferred; or

co-evaporate from 2 sources; flash. n=4.3 at 1
Toxic, Sputtering preferred; or co-evaporate from
2 sources; flash. n=4.5 at 1

Al2O3

W, Pt

Film In2O; transparent conductor.

Graphite

W, Ta

Deposits P rich. Flash evaporate.

Sputtering preferred; or co-evaporate from 2 sources.
Flash.

Indium
Sesquisulphide
Indium
Sulphide
Indium
Telluride
Iridium

850
Subl.

Graphite

650

Graphite

In2S3

1050

4.9

In2S

653

5.87

In2Te3

667

5.8

Ir

2459

22.65

1850

2080

2380

Fair

Iron

Fe

1535

7.86

858

998

1180

Xlnt.

Iron Bromide

Fe Br2

689

4.64

Iron Chloride

FeCl2

670

2.98

Subl. Subl.

561
300
Subl.
400

Subl. Subl.

Sputtering preferred; or co-evaporate from 2 sources;

flash.
ThO2
Al2O3
BeO
Fe

Attacks W. Films hard, smooth. Use gentle preheat to

outgas.

Disproportionates to Fe3O4 at 1530 C, n=3.0

Fe

Iron Iodide

FeI2

592

5.31

Iron Oxide

FeO
Fe2O3

1425

5.7

Poor

1565

5.24

Good

Iron Sulphide

FeS

1195

4.84

Kanthal

FeCrAl

1500

7.1

Lanthanum
Lanthanum
Boride
Lanthanum
Bromide
Lanthanum
Fluoride
Lanthanum
Oxide

La

920

6.17

LaB6

2210

2.61

LaBr3

783

5.06

LaF3

1490

La2O3

2250

5.84

Lead

Pb

328

11.34

Lead Bromide

PbBr2

373

6.66

~300

Lead Chloride

PbCl2

501

5.85

~325

Lead Fluoride

PbF2

822

8.24

Lead Iodide

PbI2

502

6.16

~400
Subl.
~500

Lead Oxide

PbO

890

9.53

~550

Lead
Stannate

PbSnO3

1115

8.1

Iron Oxide

Film In2S

Fe
Decomposes; sputtering preferred.
Al2O3

990

~1150
1212 1388

Decomposes.
W

Xlnt.

Al2O3

W
W, Ta

Films will burn in air if scraped.

Good
n=1.94 Hygroscopic
Subl. Subl.

342

427

Subl. Subl.

670

780

900
Subl.

Good

Ta, Mo

No decomposition. n=1.59 at 0.55

1400

Good

W, Ta

Loses oxygen. n=1.9 at 0.5

497

Xlnt.

W, Mo

Toxic. Carefully controlled rates req'd for superconductors.

Al2O3

Pt

Little decomposition. n=2.2

BeO

W, Pt, Mo

Toxic. n=1.75 at 0.3

Quartz
Quartz
Al2O3

Pt

n=2.7

Pt

No decomposition. n=2.55

Al2O3

Pt

Disproportionates.

905

Poor

Al2O3
Quartz

Graphite
Al2O3
Quartz
Al2O3
Al2O3
Graphite

~500
Subl.
550
Subl.

Lead Selenide

PbSe

1065

8.1

Lead Sulphide

PbS

1114

7.5

Lead Telluride

PbTe

917

8.16

Lead Titanate

PbTiO3

Lithium

Li

179

0.53

LiBr

547

3.46

LiCl

613

2.07

LiF

870

2.6

Lithium Iodide

LiI

446

4.06

400

Mo, W

Lithium Oxide

Li2O

1427

2.01

850

Pt, Ir

Lithium
Bromide
Lithium
Chloride
Lithium
Fluoride

Subl. Subl.
Subl. Subl.
780

910

1050

W, Mo

7.52

Little decomposition. n=3.91

Mo, Pt, Ta

Vapors toxic. Deposits Te rich. Sputtering preferred,

or co-evaporate from sources. n=5.6 at 5

Ta
227

875

307

1020

Al2O3
BeO

Ta, S.S.

Metal reacts violently in air.

~500

Ni

n=1.78

400

Ni

Use gentle preheat for outgas. n=1.66

Ni, Ta,
Mo, W

Rate control important for optical films. Use gentle preheat

for outgas. n=1.36

407

1180

Good

Good

Xlnt.

Al2O3

Al2O3

n=1.64

Lutetium

Lu

1652

9.84

1300

Lutetium
Oxide

Lu2O3

2489

9.41

1400

Magnesium

Mg

651

1.74

MgAl2O4

2135

3.6

MgBr2

700

3.72

~450

Ni

Decomposes.

MgCl2

708

2.32

400

Ni

Decomposes. n=1.6

MgF2

1266

2.9-3.2

1000

Mo, Ta

Rate control and substrate heat important for optical films.

n=1.38

MgI2

700

4.24

200

MgO

2800

3.58

1300

Good

Manganese

Mn

1244

7.2

647
Subl.

Good

Manganese
Bromide

MnBr2

695

4.38

Magnesium
Aluminate
Magnesium
Bromide
Magnesium
Chloride
Magnesium
Fluoride
Magnesium
Iodide
Magnesium
Oxide

185
247
Subl. Subl.

327
Subl.

Good

Al2O3
Vit. Carbon

Ta

Ir

Decomposes.

W, Mo
Ta, Cb

Extremely high rates possible.

Good

507
572
Subl. Subl.

500

Xlnt.

Natural spinel.

Al2O3

Ir
Carbon
Al2O3
Al2O3
BeO

W produces volatile oxides. n=1.7.

W

W, Ta, Mo
Inconel

Manganese
Chloride
Manganese
Oxide
Manganese
Sulphide
Mercury
Mercury
Sulphide
Molybdenum
Molybdenum
Boride
Molybdenum
Carbide
Molybdenum
Disulphide
Molybdenum
Silicide
Molybdenum
Trioxide
Neodymium
Neodymium
Fluoride
Neodymium
Oxide

MnCl2

650

2.98

Mn3O4

1705

4.86

MnS

1615

3.99

Hg

-39

13.55

HgS

Subl.

8.1

Mo

2610

10.22

MoB2

2100

7.12

Poor

Mo2C

2687

9.18

Fair

MoS2

1185

4.8

MoSi2

2050

6.3

MoO3

795

4.7

Nd

1024

NdF3

1410

Nd2O3

Nichrome IV

450

Inconel
W

1300
-68

-42

Subl. Subl.
1592 1822

-6
250
Subl.
2117

Mo

Al2O3

Decomposes. n=2.7.

Decomposes.

Xlnt.

Films smooth, hard. Careful degas req'd.

Evaporation of Mo(CO)6 yields Mo2C.

~50
W

Decomposes.

Mo, Pt

Slight O2 loss. n=1.9

Ta

Low Ta solubility.

1062

Xlnt.

Al2O3
BN
Al2O3

6.5

~900

Good

Al2O3

Mo, W

Very little decomposition. n=1.61 at 0.55

2272

7.24

~1400

Good

ThO2

Ta, W

Loses oxygen, films clear, EB preferred. Hygroscopic n=1.79

n varies with substrate temp.

Ni/Cr

1395

8.5

847

987

1217

Xlnt.

Al2O3
Coated

Alloys with refractory metals.

Nickel

Ni

1453

8.9

927

1072

1262

Xlnt.

Alloys with refractory metals. Forms smooth adherent films.

Nickel
Bromide

NiBr2

963

4.64

Subl. Subl.

362
Subl.

Nickel
Chloride

NiCl2

1001

3.55

Nickel Oxide
Niobium
(Columbium)
Niobium
Boride

~900
731

871

Subl.

Subl.
NiO

1990

7.45

Nb

2468

8.55

NbB2

3050

6.97

Inconel

444
Subl.

Inconel
Al2O3

~1470
1728

1977

Al2O3
Vit. Carbon
BeO
Al2O3
BeO
Vit. Carbon

2287

Xlnt.

Dissociates upon heating. n=2.18

W

Attacks W source.

Niobium
Carbide
Niobium
Nitride
Niobium
Oxide
Niobium
Pentoxide
Niobium
Telluride
Niobium-Tin
Niobium
Trioxide
Osmium
Palladium
Palladium
Oxide
Parylene
(Union
Carbide)
Permalloy

NbC

3800

7.82

NbN

2573

8.4

NbO
Nb2O5

Fair
Reactive, evaporate Nb in 10-3 N2.

6.27
1530

NbTeX

1100

Pt

4.47

7.6

n=2.3
Composition variable.

Nb3Sn

Xlnt.

Nb2O3

1780

7.5

Os

1700

22.5

2170

2340

2760

Fair

Pd

1550

12.4

842

992

1192

Xlnt.

PdO

870

8.31

C8H8

300-400

1.1

Ni/Fe

1395

8.7

Co-evaporate from 2 sources.

W

Al2O3
BeO

Al2O3

575

Alloys with refractory metals; rapid evaporation suggested.

Spits in EB.
Decomposes.
Vapor depositable plastic

947

1047

1307

Phosphorus

41.4

1.82

327

361

402

Platinum

Pt

1769

21.45

1292

1492

1747

Good

Xlnt.

Al2O3
Vit. Carbon
Al2O3
C, ThO2

Film low in Ni content. Use 84% Ni source.

Alloys with metals. Films soft, poor adhesion.

Toxic, radioactive.

Metal reacts violently in air.

W

Plutonium

Pu

635

19

Polonium

Po

254

9.4

117

170

244

Quartz

Potassium
Potassium
Bromide
Potassium
Chloride
Potassium
Fluoride
Potassium
Hydroxide
Potassium
Iodide
Praseodymium

64

0.86

23

60

125

Quartz

Mo

Metal reacts violently in air. Use gentle preheat to outgas.

KBr

730

2.75

~450

Quartz

Ta, Mo

Use gentle preheat to outgas. n=1.56

KCl

776

1.98

510

Good

Ta, Ni

Use gentle preheat to outgas. n=1.49

KF

880

2.48

~500

Poor

KOH

360

2.04

~400

Pt

Use gentle preheat to outgas.

KI

723

3.13

~500

Ta

Use gentle preheat to outgas. n=1.68

Pr

931

6.78

800

950

1150

Good

Radioactive

Quartz

Use gentle preheat to outgas. n=1.35

Ta

Praseodymium
Oxide

Pr2O3

2125

6.88

1400

Good

ThO2

Radium

Ra

700

246

320

416

Rhenium
Rhenium
Oxide

Re

3180

20.53

1928

2207

2571

Re2O7

297

8.2

Rhodium

Rh

1966

12.41

1277

1472

1707

Rubidium
Rubidium
Chloride
Rubidium
Iodide
Ruthenium

Rb

38.5

1.47

-3

37

111

ThO2
Vit. Carbon
Quartz

RbCl

715

2.76

~550

Quartz

RbI

642

3.55

~400

Quartz

Ir

Poor

Loses oxygen. n=2.0

Fine wire will self-evaporate.

~100
Good

EB gun preferred.

n=1.49

Ru

2700

12.45

1780

1990

2260

Poor

Sm

1072

7.54

373

460

573

Good

Al2O3

Ta

Sm2O3

2350

7.43

Good

ThO2

Ir

Loses O2. Films smooth, clear.

Sm2S3

1900

5.72

Good

Scandium

Sc

1539

2.99

Al2O3
BeO

Alloys with Ta

Scandium
Oxide

Sc2O3

2300

3.86

Selenium

Se

217

4.79

89

Silicon

Si

1410

2.42

992

Silicon Boride

SiB6

Samarium
Samarium
Oxide
Samarium
Sulphide

714

837

1002

Xlnt.

~400

Fair

125

170

Good

1147

1337

Fair

2.47

Spits violently in EB. Requires degas.

Loses oxygen. n=1.88 at 0.5

Al2O3
Vit. Carbon
BeO
Ta
Vit. Carbon

W
Mo

W, Mo

Toxic. Poisons vacuum systems.

W
Ta

Alloys with W; use heavy W boat. SiO produced above

4 x 10-6 Torr. EB best. n=3.42

Poor

Silicon
Carbide
Silicon
Dioxide
Silicon
Monoxide

SiC

2700

3.22

1000

SiO2

16101710

2.2-2.7

~1025

Xlnt.

Al2O3

SiO

1702

2.1

850
Subl.

Fair

Ta

Silicon Nitride

Si3N4

Subl.

3.44

Silicon
Selenide

SiSe

Subl. Subl.

Sputtering preferred.

~800
550

Quartz excellent in EB. n=1.47

W

Ta

Baffle box source best for resistance evaporation.

Low rate suggested. n=1.6
n=2.1

Quartz

Silicon
Sulphide
Silicon
Telluride
Silver
Silver
Bromide
Silver
Chloride
Silver Iodide
Sodium
Sodium
Bromide
Sodium
Chloride
Sodium
Cyanide
Sodium
Fluoride
Sodium
Hydroxide

SiS

Subl.

SiTe2

1.85

450

Quartz

4.39

550

Quartz
Evaporates well from any source.

Quartz

Ta

n=2.25

Quartz

Mo, Pt

n=2.07

Ta

n=2.21

192

Quartz

Ta, S.S.

Use gentle preheat to outgas. Metal reacts violently in air.

3.2

~400

Quartz

2.16

530

961

10.49

AgBr

432

6.47

~380

AgCl

455

5.56

~520

AgI

558

5.67

Na

97

0.97

NaBr

755

NaCl

801

NaCN

563

NaF

988

2.79

~700

NaOH

318

2.13

~470

MgO3
5Al2O3

Strontium

Sr

769

2.6

SrF2

1190

4.24

SrO

2460

4.7

958

1105

Xlnt.

~500
74

124

S8

Above
2000
115

Supermalloy

Ni/Fe/Mo

1410

8.9

Tantalum
Tantalum
Boride
Tantalum
Carbide
Tantalum
Nitride

Ta

2996

16.6

TaB2

3000

12.38

TaC

3880

14.65

TaN

3360

16.3

SrS

847

Good

Use gentle preheat to outgas. n=1.64

Quartz

~550

Spinel

Strontium
Fluoride
Strontium
Oxide
Strontium
Sulphide
Sulphur

Al2O3
Mo

Ta
Mo

Ag

Good

BeO

Cu ovens, little decomposition. Use gentle preheat to outgas.

n=1.54

Ag

Use gentle preheat to outgas. n=1.45

Mo, Ta, W

Use gentle preheat to outgas. No decomposition.

n=1.30 at 0.55.

Pt

Use gentle preheat to outgas. n=1.36

Good
239

309

Subl. Subl.

403

Poor

n=1.72
Vit. Carbon

~1000

Al2O3

1500
Subl.

Al2O3

3.7
2

Ta, W, Mo

13

19

57

Poor
Good

1960

2240

2590

Xlnt.

Quartz

W, Ta, Mo

Wets but does not alloy with refractory metals. May react
violently in air.
n=1.44

Mo

Reacts with Mo and W; n=1.87

Mo

Decomposes. n=2.11

Poisons vacuum system.

Sputtering preferred; or co-evaporate from 2 sources,
Permalloy and Mo.
Forms good films.

~2500
Reactive; evaporate Ta in 10-3 N2.

Tantalum
Pentoxide
Tantalum
Sulphide
Technetium
Teflon

Ta2O5

1800

TaS2

1300

Tc
PTFE

8.74

1550

1780

1920

2200

11.5

1570

1800

2090

330

2.9

Good

Tellurium

Te

452

6.25

157

207

277

Poor

Terbium
Terbium
Fluoride
Terbium
Oxide
Terbium
Oxide

Tb

1357

8.27

800

950

1150

Xlnt.

TbF3

1176

Tb2O3

2387

Thallium
Thallium
Bromide
Thallium
Chloride
Thallium
Iodide (B)
Thallium
Oxide
Thorium
Thorium
Bromide
Thorium
Carbide
Thorium
Dioxide
Thorium
Fluoride
Thorium
Oxyfluoride
Thorium
Sulphide

Vit. Carbon

Al2O3
Quartz
Al2O3

7.87

1300

302

11.85

TlBr

480

7.56

TlCl

430

TlI

440

7.09

Tl2O3

717

9.65

Th

1875

11.7

1430

1660

1925

5.67

Subl. Subl.

Subl.

280

360

Subl. Subl.
Subl. Subl.
Subl. Subl.

470

Poor

~250
Subl.
~150
Subl.
~250
Subl.

Ir

Partially decomposes.

Ta

Films TbO.

Al2O3
Quartz

W, Ta

Wets freely, very toxic.

Quartz

Ta

Toxic. n=2.3

Quartz

Ta

Toxic. n=2.25

Xlnt.

~2300

ThO2

3050

10.03

~2100

Good

ThF4

1110

6.3

~750

Fair

ThOF2

900

9.1

Tm2O3

Wets w/o alloying. Toxic.

Toxic. n=2.78
Toxic, Goes to Tl2O at 850 C

8.96

Thulium Oxide

W, Ta

350

2773

Tm

Baffled Source. Film structure doubtful.

Quartz

ThC2

Thulium

~800

Tl

ThS2

Slight decomposition; evaporate in 10-3 Torr of O2.

n=2.0 at 1.5

Ta

Tb4O7

ThBr4

Ta

W, Ta, Mo

Toxic, radioactive.

Mo

Toxic, n=2.47 at 5

Carbon

Vit. Carbon

Radioactive
W

Radioactive. n=1.86 at 2.2 microns

Mo

Radioactive. n=1.52. Heat substrate to above 150C.

Mo, Ta

Radioactive, n=1.52

6.8
1545

9.32
8.9

Sputtering preferred; or co-evaporate from 2 sources.

461
554
Subl. Subl.

680
Subl.
1500

Good

Al2O3

Ta
Ir

Decomposes.

Tin

Sn

232

7.75

Tin Oxide

SnO2

1127

6.95

682

807

Subl. Subl.

997

Xlnt.

Al2O3

Mo

Wets Mo; use a Ta liner in EB guns.

~1000
Subl.

Xlnt.

Quartz
Al2O3

Films from W oxygen deficient, oxidize in air. n=2.0

Good

Quartz

Alloys with refractory metals; evolves gas on first heating.

W, Mo

Evaporate in 10-4 of O2 onto 350 substrates. n=2.4

Tin Selenide

SnSe

861

6.18

~400

Tin Sulphide

SnS

882

5.08

~450

Tin Telluride

SnTe

780

6.44

~450

Titanium
Titanium
Boride
Titanium
Carbide

Ti

1675

4.5

TiB2

2980

4.5

TiC

3140

4.93

~2300

Titanium
Dioxide (rutile)

TiO2

1640

4.29

~1300

Fair

Titanium
Monoxide

TiO

1750

4.93

~1500

Good

TiN

2930

5.43

Good

Mo

Sputtering preferred. Decomposes with thermal evaporation.

Ti2O3

2130

4.6

Good

Decomposes.

3410

19.3

WB 2

2900

12.75

W 2C

2860

17.15

Titanium
Nitride
Titanium
Sesquioxide
Tungsten
Tungsten
Boride
Tungsten
Carbide
Tungsten
Telluride
Tungsten
Trioxide
Uranium
Uranium
Carbide
Uranium
Dioxide
Uranium
Fluoride
Uranium
Oxide
Uranium
Phosphide

WTe 3

1235

1453

Quartz
Xlnt.

1473

7.16

1132

19.07

UC2

2260

11.28

UO2

2176

10.9

UF4

~1000

U3O8

Dec

2117

2407

2757

Vit. Carbon

W, Mo

Good

Use gentle preheat to outgas. Films TiO2 if evaporated like

TiO2; n=2.2

Forms volatile oxides. Films hard & adherent.

Poor
1480

1720

2120

Xlnt.

C
Quartz

Subl. Subl.
1132 1327

980
Subl.
1582
2100

Good

W, Pt

Good

Mo, W

Carbon

8.3
1200

Use gentle preheat to outgas. W reduces oxide slightly.

n=1.68
Films oxidize.
Decomposes.

W
300

8.57

TiC

Poor

9.49

WO 3

UP2

1067

Quartz

Ta causes decomposition

Ni
W

Decomposes at 1300C to UO2

Ta

Decomposes

Uranium
Sulphide
Vanadium
Vanadium
Boride
Vanadium
Carbide
Vanadium
Dioxide
Vanadium
Nitride
Vanadium
Pentoxide
Vanadium
Silicide

U2S3

1400

1890

5.96

VB2

2400

5.1

VC

2810

5.77

VO2

1967

4.34

VN

2320

6.13

V2O5

690

3.36

VSi2

1700

4.42

Ytterbium

Yb

824

6.98

Ytterbium
Fluoride

YbF3

1157

8.17

Ytterbium
Oxide

Yb2O3

2346

9.17

Yttrium

1509

4.48

Y3Al5O12

1990

YF3

1387

4.01

Yttrium Oxide

Y2O3

2680

4.84

Zinc

Zn

419

7.14

Zinc
Antimonide

Zn3Sb2

546

6.3

Zinc Bromide

ZnBr2

394

4.22

~300

Zinc Fluoride

ZnF2

872

4.84

~800

Zinc Nitride

Zn3N2

Zinc Oxide

ZnO

1975

5.61

~1800

Zinc Selenide

ZnSe

1526

5.42

660

Yttrium
Aluminum
Oxide
Yttrium
Fluoride

1162

1332

1547

Xlnt.

Slight decomposition

W, Mo

Wets Mo. EB evaporated films preferred.

~1800
Subl. Subl.

~575
Subl.

Deposit metal in 1 x 10-3 O2

~500

520
590
Subl. Subl.

Subl. Subl.
830
973

690
Subl.

Quartz

Good

Ta

~800

Mo

n=1.57 at 3.8

~1500
Subl.

Ir

Loses oxygen.

W, Ta

High Ta solubility.

1157

Xlnt.

Al2O3

Good

Subl. Subl.
127

177

W
W

~2000
Subl.

Good

250

Xlnt.

Al2O3
Quartz

Films not ferroelectric

Loses oxygen, films smooth and clear. n=1.79 at 1

Mo, W, Ta

Evaporates well under wide range of conditions.

Carbon

Decomposes.

Quartz

Pt, Ta

6.22

Mo
Fair

Decomposes.
Anneal in air at 450C to reoxidize; n=2.0

Quartz

W
Mo

Ta, W, Mo

Use gentle preheat to outgas. Evaporates well, n=2.6

Zinc Sulphide

ZnS

1830

4.09

Zinc Telluride

ZnTe

1238

6.34

Zircon

ZrSiO4

2550

4.56

Zirconium
Zirconium
Boride
Zirconium
Carbide
Zirconium
Nitride
Zirconium
Oxide
Zirconium
Silicide

Zr

1852

6.4

ZrB2

3040

6.08

ZrC

3540

6.73

ZrN

2980

7.09

ZrO2

2700

5.49

ZrSi2

1700

4.88

Subl. Subl.

~800
Subl.

Good

~600

1477

1702

1987

Xlnt.

Ta, Mo

Use gentle preheat to outgas. Films partially decompose.

Sticking coefficient varies with substrate temperature.
n=2.3 at 0.5

Mo, Ta

Use gentle preheat to outgas. n=2.85 at 0.5

Alloys with W. Films oxidize readily.

Good
~2500
Reactively evaporate in 10-3 N2 atmosphere.
~2200

Good

Films oxygen deficient, clear, and hard.

n=2.05 at 0.75