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MJE15028, MJE15030 (NPN),

MJE15029, MJE15031 (PNP)


Complementary Silicon
Plastic Power Transistors
These devices are designed for use as highfrequency drivers in
audio amplifiers.
Features

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8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
120150 VOLTS, 50 WATTS

High Current Gain Bandwidth Product


TO220 Compact Package
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating

Symbol

Value

Unit

NPN

COLLECTOR
2,4

COLLECTOR
2,4

CollectorEmitter Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G

VCEO

CollectorBase Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G

VCB

EmitterBase Voltage

VEB

5.0

Vdc

IC

8.0

Adc

3
EMITTER

ICM

16

Adc

Base Current

IB

2.0

Adc

Total Device Dissipation


@ TC = 25_C
Derate above 25C

PD
50
0.40

W
W/_C

Total Device Dissipation


@ TA = 25_C
Derate above 25C

PD
2.0
0.016

W
W/_C

65 to +150

_C

120
150

Operating and Storage Junction


Temperature Range

Vdc
120
150

Collector Current Continuous


Collector Current Peak

Vdc

PNP

TJ, Tstg

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1
BASE

1
BASE
3
EMITTER

TO220
CASE 221A
STYLE 1
1

MARKING DIAGRAM

THERMAL CHARACTERISTICS
Symbol

Max

Unit

MJE150xxG

Thermal Resistance, JunctiontoCase

RqJC

2.5

_C/W

AY WW

Thermal Resistance, JunctiontoAmbient

RqJA

62.5

_C/W

Characteristics

MJE150xx = Device Code


x = 28, 29, 30, or 31
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2014

November, 2014 Rev. 7

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

Publication Order Number:


MJE15028/D

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)


ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS
VCEO(sus)

CollectorEmitter Sustaining Voltage (Note 1)


(IC = 10 mAdc, IB = 0)
MJE15028, MJE15029
MJE15030, MJE15031

Vdc
120
150

Collector Cutoff Current


(VCE = 120 Vdc, IB = 0)
MJE15028, MJE15029
(VCE = 150 Vdc, IB = 0)
MJE15030, MJE15031

ICEO

Collector Cutoff Current


(VCB = 120 Vdc, IE = 0)
MJE15028, MJE15029
(VCB = 150 Vdc, IE = 0)
MJE15030, MJE15031

ICBO

Emitter Cutoff Current


(VBE = 5.0 Vdc, IC = 0)

IEBO

mAdc

0.1

0.1
mAdc

10

10

10

40
40
40
20

mAdc

ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)

hFE

DC Current Gain Linearity


(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)
(NPN to PNP)

hFE

CollectorEmitter Saturation Voltage


(IC = 1.0 Adc, IB = 0.1 Adc)

VCE(sat)

BaseEmitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)

VBE(on)

Typ
2
3
Vdc

0.5

1.0

30

Vdc

DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

fT

MHz

PD, POWER DISSIPATION (WATTS)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT = hfe ftest.

TA

TC

3.0

60

2.0

40
TC

1.0

20

TA

20

40

60

80

100

120

T, TEMPERATURE (C)

Figure 1. Power Derating

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2

140

160

r(t), TRANSIENT THERMAL


RESISTANCE (NORMALIZED)

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)


1.0
0.7
0.5

D = 0.5

0.3

0.2

0.2

0.1

0.1

0.02

0.03
0.02

0.01
SINGLE PULSE

0.01
0.01

0.02

0.05

P(pk)

ZqJC(t) = r(t) RqJC


RqJC = 1.56C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)

0.05

0.07
0.05

0.1

0.2

0.5

1.0

2.0
5.0
t, TIME (ms)

10

20

t1
t2
DUTY CYCLE, D = t1/t2
50

100

200

500

1.0 k

IC, COLLECTOR CURRENT (AMP)

Figure 2. Thermal Response

20
16
10

There are two limitations on the power handling ability of


a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 3 and 4 is based on T J(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

100 ms
5ms
dc

1.0
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25C

0.1

0.02
2.0

MJE15028
MJE15029
MJE15030
MJE15031

5.0
10
50
20
120 150
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. Forward Bias Safe Operating Area

1000

8.0

Cib (NPN)
Cib (PNP)

C, CAPACITANCE (pF)

IC, COLLECTOR CURRENT (AMP)

500

5.0
IC/IB = 10
TC = 25C

3.0

VBE(off) = 9 V

2.0

100

Cob (PNP)

50
30

5V
3V

1.0

200

Cob (NPN)

20

1.5 V
0V
100 110 120 130 140 150
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10
1.5

3.0

5.0 7.0 10
30
50
VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitances

Figure 4. ReverseBias Switching


Safe Operating Area

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3

100 150

fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)

hfe , SMALL SIGNAL CURRENT GAIN

100

50
30
VCE = 10 V
IC = 0.5 A
TC = 25C

20

PNP
NPN

10

5.0
0.5

2.0
3.0
f, FREQUENCY (MHz)

1.0

0.7

5.0

7.0

10

100
90

(PNP)
(NPN)

60
50

20
10
0
0.1

0.2

NPN MJE15028 MJE15030


1K
500
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

VCE = 2 V

VCE = 2.0 V

500
TJ = 150C
TJ = 25C
TJ = -55C

30
20
10
0.1

10

PNP MJE15029 MJE15031

1K

100
70
50

5.0

Figure 7. Current GainBandwidth Product

Figure 6. SmallSignal Current Gain

200
150

1.0
0.5
2.0
IC, COLLECTOR CURRENT (AMP)

TJ = 150C
200
TJ = 25C

100

TJ = -55C

50

20

0.2

0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)

5.0

10
0.1

10

0.2

0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)

5.0

10

Figure 8. DC Current Gain


NPN

PNP

TJ = 25C

1.8

TJ = 25C

V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

1.6

1.2
1.0
VBE(sat) @ IC/IB = 10
0.6

VBE(on) @ VCE = 2.0 V

1.4

1.0
VBE(sat) @ IC/IB = 10

0.8

VBE(on) @ VCE = 2.0 V


0.4

VCE(sat) = IC/IB = 20

0.2

VCE(sat) = IC/IB = 20

IC/IB = 10
0.1

0.2

0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)

5.0

0
0.1

10

Figure 9. On Voltage

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4

0.2

0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)

IC/IB = 10
5.0

10

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)


10

1.0
VCC = 80 V
IC/IB = 10
TJ = 25C

0.5

VCC = 80 V
IC/IB = 10, IB1 = IB2
ts (NPN) TJ = 25C

5.0

t, TIME (s)

t, TIME (s)

3.0
td (NPN, PNP)

tr (PNP)

0.2
0.1

ts (PNP)

1.0
0.5

0.05

tf (PNP)

tr (NPN)

0.03
0.02
0.01
0.1

2.0

0.2

0.2

0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)

5.0

0.1
0.1

10

tf (NPN)
0.2

0.3
0.5
2.0
IC, COLLECTOR CURRENT (AMP)

Figure 11. TurnOff Times

Figure 10. TurnOn Times

ORDERING INFORMATION
Device

Package

Shipping

MJE15028G

TO220
(PbFree)

50 Units / Rail

MJE15029G

TO220
(PbFree)

50 Units / Rail

MJE15030G

TO220
(PbFree)

50 Units / Rail

MJE15031G

TO220
(PbFree)

50 Units / Rail

http://onsemi.com
5

5.0

10

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)


PACKAGE DIMENSIONS

TO220
CASE 221A09
ISSUE AH

T
B

SEATING
PLANE

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

G
D
N

INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

STYLE 1:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

BASE
COLLECTOR
EMITTER
COLLECTOR

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION


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MJE15028/D