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I. I NTRODUCTION
region into the p-GaN cap layer. In 1986, Iga et al. proposed a multiquantum barrier (MQB) structure to enhance the
electron blocking capability [21]. MQB structure consists of
alternating layers of narrow and wide bandgap semiconductor
materials. Similar to crystal lattice, such an arrangement forms
allowed and forbidden carrier states over a very shorter range.
By properly design the MQB structure, it is possible to achieve
an effective barrier height which is much larger than classical
barrier [22]. Previous works had also demonstrated the use of
MQB as a mechanism to improve the effective barrier height
in InGaP-based red LEDs and laser diodes, which results in
suppression of carrier leakage [23][28].
Similarly, we should be able to apply MQB structure to
GaN-based LDs and LEDs. It has been shown that one
can achieve much lower threshold current and higher slope
efficiency from GaN-based LDs with MQB structure, as
compared to GaN-based LDs with a p-AlGaN EBL [29]. For
GaN-based LEDs, it has also been shown experimentally
that MQB structure can successfully reduce the leakage current [30]. This should also result in reduced efficiency droop
at high injection current. However, only very few reports
on GaN-based LEDs with MQB structure can be found in
the literature. On the other hand, it has been shown that
chirped MQB (CMQB) structure can provide an even larger
electron blocking efficiency for AlInGaP-based LEDs, as
compared to uniform MQB (UMQB) [31]. Very recently, Lin
et al. reported experimentally that such CMQB can indeed
further improve the performances of GaN-based LEDs [32].
In this study, we numerically simulated the performance of
GaN-based LEDs with either conventional EBL, UMQB structure or CMQB structure by using the Advance Physical Model
of Semiconductor Devices (APSYS) program developed by
the Crosslight Software Inc [33]. This program can simulate
optical and electrical properties of LEDs by solving Poissons equation, current continuity equations, carrier transport
equation, quantum mechanical wave equation, and photon rate
equation. Using the simulation program, the performance of
the LEDs will be compared and discussed. The simulated
results will also be compared to the properties of the experimentally fabricated LEDs.
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Fig. 4.
(a)
Fig. 3.
Simulated energy band diagrams for GaN-based LEDs with
conventional EBL, UMQB structure, and CMQB structure, injected with
130-mA dc current.
(b)
Fig. 5. Calculated radiative recombination rate in each well layer for three
MQW LEDs injected. (a) 20-mA dc current. (b) 130-mA dc current.
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(a)
(a)
(b)
Fig. 6. (a) Simulated and (b) experimental LI characteristics for these three
LEDs.
(b)
Fig. 7.
LEDs.
(a) Simulated IQE and (b) experimental EQE curves for these three
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