SPICE Device Model Si2399DS

Vishay Siliconix

P-Channel 20 V (D-S) MOSFET

DESCRIPTION

CHARACTERISTICS

The attached SPICE model describes the typical electrical

characteristics of the p-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 C
to + 125 C temperature ranges under the pulsed 0 V to 5 V
gate drive. The saturated output impedance is best fit at the
gate bias near the threshold voltage. A novel gate-to-drain
feedback capacitance network is used to model the gate
charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter
values are optimized to provide a best fit to the measured
electrical data and are not intended as an exact physical
interpretation of the device.

P-Channel Vertical DMOS

Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the - 55 C to + 125 C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics

SUBCIRCUIT MODEL SCHEMATIC

CGD

R1
3

M2
Gy

G
RG

+
ETCV

Gx
CGS

DBD

M1

Note
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Document Number: 67605
S11-0398-Rev. A, 14-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPICE Device Model Si2399DS

Vishay Siliconix
SPECIFICATIONS (TJ = 25 C, unless otherwise noted)
PARAMETER

SYMBOL

TEST CONDITIONS

SIMULATED MEASURED
DATA
DATA

UNIT

Static
Gate-Source Threshold Voltage
Drain-Source On-State Resistancea

VGS(th)
RDS(on)

VDS = VGS, ID = - 250 A

0.83

VGS = - 10 V, ID = - 5.1 A

0.029

0.028

VGS = - 4.5 V, ID = - 4.5 A

0.035

0.037

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 4.6 A

13

15

Diode Forward Voltage

VSD

IS = - 4.1 A

- 0.81

- 0.80

834

835

Dynamicb
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = - 10 V, VGS = 0 V, f = 1 MHz

181

180

154

155

VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A

10

6.4

VDS = - 10 V, VGS = - 2.5 V, ID = - 5.1 A

1.7

1.7

3.4

3.4

pF

nC

Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.

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Document Number: 67605

S11-0398-Rev. A, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPICE Device Model Si2399DS

Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 C, unless otherwise noted)
5

20

VGS = 5 V, 3.5 V, 3 V, 2.5 V

ID - Drain Current (A)

ID - Drain Current (A)

15

10
VGS = 2 V

TJ = 125 C
3

5
1

0
0.0

0.5

1.0

1.5

2.0

0.0

0.5

VDS - Drain-to-Source Voltage (V)

0.08

1400

0.06

1050

0.04

VGS = 2.5 V

0.02

VGS = 4.5 V

1.0

1.5

2.0

VGS - Gate-to-Source Voltage (V)

C - Capacitance (pF)

RDS(on) - On-Resistance ()

TJ = 25 C

TJ = - 55 C

VGS = 1.5 V

Ciss
700

350
Coss
Crss

0.00

0
0

10

15

20

ID - Drain Current (A)

15

20

VDS - Drain-to-Source Voltage (V)

100

5
ID = 5.1 A

VDS = 10 V

4
TJ = 150 C

VDS = 16 V

IS - Source Current (A)

VGS - Gate-to-Source Voltage (V)

10

10
TJ = 25 C

0.1

0
0

Qg - Total Gate Charge (nC)

12

0.2

0.4

0.6

0.8

1.2

VSD - Source-to-Drain Voltage (V)

Note
Dots and squares represent measured data.
Document Number: 67605
S11-0398-Rev. A, 14-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 91000

Revision: 18-Jul-08

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