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I. INTRODUCTION
Manuscript received June 25, 2001; revised July 26, 2001. The work was
supported by the Office of Naval Research through the IMPACT MURI program
(contact monitor: Dr. J. Zolper) and the Air Force Office of Scientific Research
(contact monitor: Dr. G. Witt). The review of this letter was arranged by Editor
D. Ueda.
L. Shen, S. Heikman, R. Coffie, N.-Q. Zhang, D. Buttari, I. P. Smorchkova,
S. Keller, and U. K. Mishra are with the Department of Electrical and Computer
Engineering, University of California, Santa Barbara, CA 93106 USA (e-mail:
lkshen@engineering.ucsb.edu).
B. Moran and S. P. DenBaars are with the Materials Department, University
of California, Santa Barbara, CA 93106 USA.
Publisher Item Identifier S 0741-3106(01)08860-7.
458
IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 10, OCTOBER 2001
0 7 2 75
01
-mm.
Small-signal RF measurements yielded current-gain and
, respectively)
power-gain cutoff frequencies ( and
of 28 GHz and 56 GHz for 0.7- m gate-length device at
V and
V.
An ATN load-pull system was used for the large signal continuous-wave (CW) measurements at 8 GHz. Fig. 4 shows the
uncooled on-wafer measurement results. The device was biased
V and
mA/mm and
in class-AB mode at
tuned for maximum power. Output power density of 8.4 W/mm
was obtained. The associated power gain and PAE are about 7.5
IV. CONCLUSION
In conclusion, a novel heterojunction AlGaN/AlN/GaN was
used to make a HEMT. The insertion of the 1-nm AlN interfa, accial layer generates a dipole to increase the effective
companied by a small increase in 2DEG density. The structure
also decreases the alloy disorder scattering, thus improving the
electron mobility. The device based on this structure exhibited
good DC and RF performance. The high peak current 1 A/mm at
V was obtained and high-power density of 8.4 W/mm
with a PAE 28% at 8 GHz was achieved.
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