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Chen Zhao, Bingbing Chen, Xianfeng Qiao, Lin Luan, Kai Lu, and Bin Hu*
Organicinorganic halide perovskites are becoming attractive
candidates for developing photovoltaic solar cells.[15] Materials processing and device engineering have led to high power
conversion efficiencies based on the intense light absorption,
superior charge diffusion length, long charge carrier lifetimes,
and low exciton binding energy.[612] It is noted that perovskite
solar cells often exhibit light soaking effects and hysteresis phenomena under operating condition: a continuous light illumination can gradually change the device performance.[2,13,14] The
experimental studies have shown that the light soaking and
hysteresis phenomena are related to the electrode interfaces
in planar-heterojunction perovskite solar cells.[2] In general,
the light soaking and hysteresis effects can be attributed to the
reorientation of ferroelectric organic cations,[1517] lattice distortion-induced polarization,[14] trapping/detrapping of charge
carriers,[18] and ion migration in perovskite solar cells.[18] Furthermore, optical measurements have found that bulk trapping
can strongly influence the photoconductivity response and consequently generates photocurrent hysteresis phenomena.[1921]
In addition, the impedance and ultraviolet photoemission spectroscopy (UPS) studies indicate that energy level alignment and
trap filling action can also cause light soaking behaviors.[2228]
However, it still demands further in-depth investigations to
understand how bulk and interface parameters are internally
coupled in light soaking and hysteresis phenomena to control
the useful and nonuseful photovoltaic processes in perovskite
solar cells.
Here, we investigate the mutually connected bulk and interface parameters involved in light soaking effects and hysteresis phenomena by using capacitancevoltage (CV), timedependent photoluminescence (PL), and frequency-dependent
capacitance (Cf) measurements based on indium tin oxide
(ITO)/poly(3,4-ethylenedioxythiophene) poly(styrene-sulfonate)
(PEDOT:PSS)/CH3NH3PbI3xClx/[6,6]-phenyl C61-butyric acid
methyl ester (PCBM)/aluminum (Al) devices. We observe that
the perovskite solar cells can exhibit reversible light soaking
phenomena: the open-circuit voltage (VOC) and fill factor (FF)

C. Zhao, B. Chen, Dr. X. Qiao, L. Luan,

K. Lu, Prof. B. Hu
Wuhan National Laboratory for Optoelectronics
and School of Optical and Electronic Information
Huazhong University of Science and Technology
Wuhan 430074, China
E-mail: bhu@utk.edu
Prof. B. Hu
Department of Materials Science and Engineering
University of Tennessee
Knoxville, TN 37996, USA

DOI: 10.1002/aenm.201500279

Adv. Energy Mater. 2015, 1500279

continuously increase with light illumination while the shortcircuit current (JSC) experiences a quick increase and then a
decrease upon light exposure. The CV measurements find
that light soaking can decrease the charge accumulation at the
electrode interfaces. Essentially, the light soaking-decreased
charge accumulation at electrode interface can be attributed
to following two possible processes. First, the photogenerated
carriers can neutralize the interfacial defects at electrode interface upon light illumination. Second, the migration of ions can
change the built-in electric field and then affects the charge
accumulation at electrode interfaces. In particular, these two
processes can largely increase the VOC by increasing interfacial
potential barrier at electrode interfaces during light illumination. The time-dependent PL and frequency-dependent capacitance (Cf) find that the bulk defects within perovskite film are
mainly positively charged and can be neutralized by photogenerated electrons upon light illumination. In particular, our frequency-dependent capacitance provides the first direct evidence
that light soaking can decrease bulk-electrical polarization
within organo-metal halide perovskites. Especially, decreasing
the bulk-electrical polarization causes a decrease on JSC in light
soaking. However, neutralizing the defects at electrode interfaces and bulk perovskite film can enhance the transport of the
dissociated charge carriers to respective electrodes, increasing
the FF during light illumination. Clearly, our experimental
studies provide an in-depth understanding on internal coupling
between electrode and bulk parameters in light soaking and
hysteresis phenomena in perovskite solar cells under deviceoperating condition.
Figure 1 shows the light soaking effects on device performance for perovskite solar cells. On initial light exposure the
device shows a lower photovoltaic performance with VOC =
0.51 V, JSC = 18.34 mA cm2, FF = 53.1%, and power conversion efficiency (PCE) = 4.97%. With continuous light exposure, device performance is significantly improved over time.
After 20 min of light soaking, the enhanced VOC = 0.83 V,
JSC = 18.18 mA cm2, FF = 69.5% are obtained, resulting in a
PCE = 10.49%. As we know, a continuous light illumination
can cause heating and charge trapping in the development of
light soaking and hysteresis effects. Here, our studies indicate
that the light soaking and hysteresis effects come from charge
trapping rather than heating. Specifically, we observe that the
surface temperature of device can be increased from 26 to
42 C when the cells are continuously exposed to light illumination. However, the device performance only slightly decreases,
according to the JV characteristics (inset in Figure 2), when
the temperature increased to 42 C equivalent to the temperature produced by continuous light illumination. After removing
the heating and cooling the device to room temperature, we
can see that the device performance is again significantly

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Revealing Underlying Processes Involved in Light Soaking

Effects and Hysteresis Phenomena in Perovskite Solar Cells

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Figure 1. Light soaking effects on photovoltaic performance for ITO/

PEDOT:PSS/perovskite/PCBM/Al device under illumination.

enhanced with continuous light exposure. This confirms that

light soaking effects are responsible for enhancement of device
performance rather than heating effects in perovskite solar cells
upon light illumination.
In order to determine whether the light soaking effects are
reversible phenomena, we perform the test at different times,
separately, on the same device. We can see in Figure 3 that
the three-cycle tests performed at different times give similar
light soaking effects: t0 (initial time), t1 (1 h), and t2 (24 h).
The reversible and irreversible effects are about 95% and 5%,
respectively. This confirms that light soaking effects are reversible phenomena. The small portion of irreversible component
(5%) can be attributed to the structural changes caused by light
illumination. In light soaking effects we can see that the VOC
and FF values increase first and then saturate with light illumination, while the JSC value experiences a quick increase and
then a decrease upon light exposure. To understand the light
soaking effects on device performance based on mutually connected bulk and interface parameters, the CV, time-dependent
PL, and Cf measurements are performed for perovskite solar
cells. Figure 4a shows the CV characteristics for perovskite
solar cells at dark condition and under illumination of 30 min.

Figure 2. Effects of heating and light soaking on device performance

for ITO/PEDOT:PSS/perovskite/PCBM/Al device. The inset shows the
heating effects on device performance.

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The CV measurement, usually used to reflect the interface

parameters, can characterize the surface accumulation of photogenerated charge carriers and investigate the effect of surface charge accumulation on VOC.[29,30] Here, we discuss four
detailed information from the CV characteristics. First, the
device capacitance increases as the applied bias changes from
negative bias toward Vpeak under photoexcitation. Changing
the applied bias toward the Vpeak provides an external electric
field (Eex) against the built-in electric field (Ebt), leading to a
decrease on effective field to drift photogenerated carriers to
respective electrodes. In this case, the photogenerated charge
carriers become more accumulated at electrode interfaces,
showing an increased capacitance as the applied bias increase
to Vpeak. Second, the device capacitance reaches a maximum
value at Vpeak and then quickly decreases as the applied bias further increases beyond Vpeak. In this case, the charge injection
and recombination can occur, leading to a reduced capacitance.
Third, the initial photoexcitation generates Vpeak value of 0.58 V
relative to the dark Vpeak value of 0.60 V. Vpeak shift between dark
and photoexcitation conditions indicates that photogenerated
charges are accumulated on the electrode interfaces under
photoexcitation.[31,32] Fourth, Vpeak value increases from 0.58 to
0.85 V under the light illumination of 30 min, generating a
Vpeak shift of 0.27 V (Figure 4b). At the same time, the capacitance value continuously increases with light illumination. It is
known that Vpeak value is determined by the condition in which
the external electric field (Eex) completely cancels the built-in
electric field (Ebt) under photoexcitation. We should note that
Ebt consists of two components: (i) the dark field (Edark) caused
mainly by the workfunction difference between two electrodes
and (ii) the electric field developed by the surface accumulation,
namely surface accumulation-induced field (Eac), as shown in
Equation (1).
E bt = E dark E ac

(1)

It should be further noted that Eac is in the opposite direction

to Edark. Increasing Eac can essentially decrease the overall Ebt,
decreasing Vpeak (Figure 4c). Therefore, Vpeak value can reflect
the amount of charge accumulation at electrode interfaces. The
larger and smaller Vpeak values correspond to less and more
interfacial accumulation of photogenerated charge carriers at
electrode interfaces, respectively. As a result, the increase of
Vpeak value indicates that light soaking can decrease the charge
accumulation at electrode interfaces. In general, the charge
accumulation at electrode interfaces can be decreased in two
possible ways in light soaking effects. First, the photogenerated
carriers can neutralize the surface defects at electrode interfaces
and consequently reduce the density of surface defects upon
light illumination. Second, the recent studies have found that
the ion migration can occur in organo-metal halide perovskites
toward respective electrodes driven by an electric field.[33] These
migrated ions can consequently generate space charges.[34]
The space charges can form local electric fields, decreasing the
accumulation-induced field (Eac). This can essentially lead to
a decrease on the charge accumulation at electrode interfaces.
Furthermore, decreasing the charge accumulation can lead to
an increase on Ebt, according to Equation (1). This can cause
an increase on VOC when the photocurrent is balanced by the

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Figure 3. The reversibility of photovoltaic parameters (VOC, JSC, FF, and PCE) upon light illumination. Three-cycle tests on the same device measured
at different times: initial time (black symbols), after 1 h dark condition (red symbols), and after 24 h dark condition (blue symbols).

injection current upon applying Eex, as shown in Figure 4c. The

increase of VOC due to reduction on the charge accumulation
can be further discussed as follows. VOC is essentially related to
the effective potential barrier for charge injection at electrode
interfaces when the photocurrent is counteracting the injection
current. The dark injection barrier in the metalsemiconductor
contact can be described by the following equation
i
n i = N t exp
kBT

(2)

where ni and Nt are surface charge density and volume density of molecular sites, respectively. i is the potential barrier
at the interface between the active medium and the electrode.
Obviously, the lower surface charge density will result in a
higher potential barrier i. It is noted that, at VOC condition,
the surface charge density contains both dark carriers (the carriers injected from electrodes) and photogenerated carriers
(the carriers accumulated at electrode interfaces). As a result,
decreasing the accumulation of photogenerated charge carriers
during light soaking can increase the interfacial potential barrier at electrode interfaces and then lead to an increase on VOC
when the photocurrent is canceled by the injection current.
Nevertheless, our CV analysis indicates that the light soaking
can decrease the surface charge accumulation by neutralizing
the charged surface defects and consequently leads to a large
increase on VOC with increasing interfacial potential barrier at
electrode interfaces in perovskite solar cells.
To study light soaking effects in bulk perovskites, we have
measured the time-dependent PL for perovskite, perovskite/
PCBM, perovskite/spiro-MeOTAD films on quartz substrates

Adv. Energy Mater. 2015, 1500279

(Figure 5). We can see that the PL intensity gradually increases

with light illumination, showing light soaking effects. It is
noted that the perovskites can have bulk defects.[18,3537] On the
other hand, a photoexcitation can generate a large number of
free electrons and holes due to the low-binding energy and fast
dissociation.[5,10,38,39] As a result, the photogenerated charge carriers can occupy the bulk defects, decreasing the density of bulk
defects under continuous light illumination. As the density of
bulk defects is decreased upon light illumination, more photogenerated charge carriers become available to recombine into
excitons to increase the PL in the perovskite layer, as shown in
Figure 5a. Nevertheless, the increase of PL intensity indicates
that the density of bulk traps can be decreased by light illumination due to the charge occupation in the perovskite film. In
order to determine the type of bulk traps existed in the perovskite film, we select two different materials: electron-extracting
PCBM layer and hole-extracting spiro-MeOTAD layer, to study
the light soaking effects on PL (Figure 5b). We can see that the
PL intensity is quenched with different degrees in the doublelayer perovskite/PCBM and perovskite/spiro-MeOTAD structures (Figure 5c,d). The PL lifetime measurements have also
shown the existence of bulk defects in perovskite films.[40]
Furthermore, the Stark spectroscopy studies indicate that the
oriented dipoles are formed at the mesoporous oxide/perovskite interface due to specific interactions between the perovskite and the mesoporous oxide.[41] It has been also found that
the PL quenching is mainly due to the oriented dipoles at the
mesoporous oxide/perovskite interface.[41] Here, we use the
PL quenching separately with electron-extracting PCBM and
hole-extracting spiro-MeOTAD based on double-layer structures to determine the type of bulk traps. In our design the

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Figure 4. a) CV characteristics for ITO/PEDOT:PSS/perovskite/PCBM/Al device under illumination of 30 min as compared to dark condition and.
b) The change of Vpeak as a function of light illumination time. c) Schematic diagram to show overall electric field in perovskite solar cells. The effective
built-in field Ebt consists of the dark field (Edark) and surface accumulation-induced field (Eac). Eex represents an external electric field.

photogenerated electrons and holes become majority charge

carriers, respectively, in the double-layer perovskite/spiroMeOTAD and perovskite/PCBM structures. Therefore, we can
use the PL quenching to investigate whether the photogenerated electrons or holes are responsible for occupying the
bulk traps in light soaking effects. In particular, because the PL
mainly comes from the bulk perovskite film, studying the PL
quenching can indeed show the properties of bulk traps in the
perovskite film. It can be seen in Figure 5c that the double-layer
perovskite/PCBM, where the photogenerated holes are kept in
the bulk perovskite, exhibits negligible light soaking effects on
PL. On contrast, the double-layer perovskite/spiro-MeOTAD
structure, where the photogenerated electrons are kept in the
bulk perovskite, shows clear light soaking effects on PL. This
comparison indicates that the photogenerated electrons can
effectively occupy the bulk traps and consequently leads to
a PL enhancement upon light illumination. As a result, we
can show that the bulk traps are essentially the p-type defects
in the bulk perovskite film. This is consistent with the presence of positively charged traps in both solid and mesosuperstructured perovskite films investigated by photoconductivity
studies.[19] We should also note that both bulk and interfacial
traps can be involved in photoconductivity measurements in
solar cells. Here, our PL studies can eliminate the interfacial
effect and provide a direct method to show positively charged
bulk defects within perovskite film. We should further note that
reducing the density of charged bulk traps can generate more
effective channels in the perovskite film for dissociated charge

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carriers to transport to respective electrodes. Combining the

decreased charge accumulation at electrode interfaces and the
reduced density of bulk traps, we can expect that continuous
light illumination can lead to an increase on the FF, as shown
in Figure 3.
In general, occupying the bulk defects can inevitably influence the local electrical polarizations within the perovskite film
in perovskite solar cells. Here, we use the Cf measurements to
directly explore the light soaking effects on local polarizations in
bulk perovskite film under light illumination. We can see from
Figure 6 that the Cf characteristics can be divided into two
zones, namely zone I (<4 103 Hz) and zone II (>4 103 Hz).
The Cf results show two interesting phenomena upon light
illumination. First, in the zone I, the capacitance increases with
light exposure time at low frequencies (<4 103 Hz). We estimate the RC constant of the device to be about 600 s. Therefore, the low-frequency zone I can be attributed to the polarizations at electrode interfaces. From our CV results shown in
Figure 4 we can see that the light illumination can decrease the
surface accumulation at electrode interfaces. This can lead to
a reduction on Eac, consequently increasing the effective Ebt,
according to Equation (1). As a con sequence, the light illumination can increase the surface polarization in the perovskite
solar cells. Second, in the zone II, the capacitance decreases at
high frequencies with light illumination. This high-frequency
capacitance is essentially related to the bulk polarizations in
the perovskite layer. Clearly, the capacitance reduction at high
frequency provides a direct evidence that the light illumination

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Figure 5. The time-dependent PL measured at 780 nm for a) perovskite, c) perovskite/PCBM, and d) perovskite/spiro-MeOTAD films by using the
500 nm excitation. Each cycle was measured for 20 min under photoexcitation and subsequently placed in dark condition for 30 min. b) Schematic
diagram of energy levels for double-layer perovskite/PCBM and perovskite/spiro-MeOTAD structures.

can decrease the bulk polarizations in the perovskite film.

We should note that decreasing bulk polarizations can cause
two possible effects: weakening the charge dissociation and
increasing the charge recombination. This can consequently
decrease JSC in the perovskite solar cells upon light illumination. Combining with time-dependent PL and CV results we
can see that the interface and bulk parameters are coupled
in light soaking effects and hysteresis phenomena. Specifically, our results indicate that light soaking can decrease the
charge accumulation at electrode interfaces which can occur by

Figure 6. Cf characteristics measured as a function of illumination time

for ITO/PEDOT:PSS/perovskite/PCBM/Al device.

Adv. Energy Mater. 2015, 1500279

neutralizing the charged surface defects or migrating ions. The

charge accumulation at electrode interfaces can directly change
the built-in electric field and consequently affect the charge
trapping in the bulk. On the other hand, the charge trapping in
the bulk can indirectly change the built-in field and then modifies the charge accumulation at electrode interfaces. Clearly, the
interfacecharge accumulation at electrode interfaces and the
bulk charge trapping are internally coupled in light soaking and
hysteresis phenomena in perovskite solar cells.
In summary, mutually connected bulk and interface parameters involved in light soaking effects and hysteresis phenomena are studied by using CV, time-dependent PL, and
Cf measurements. The CV measurements find that light
soaking can decrease the surface accumulation of photogenerated charge carriers at the electrode interfaces. This suggests
that the photogenerated carriers can neutralize the interfacial
defects and consequently increases VOC. On the other hand,
the time-dependent PL studies suggest that continuous light
illumination can reduce the density of charged bulk defects
within the perovskite layer through charge trapping effects.
Our time-dependent PL studies on the double-layer perovskite/
PCBM and perovskite/spiro-MeOTAD structures show that
photogenerated electrons can more effectively occupy the bulk
defects upon continuous light illumination, leading to a reduction on the density of bulk defects. This provides a direct evidence that the bulk traps are mainly positively charged defects.
In particular, light soaking can decrease the density of charged
bulk defects through charge trapping. This can enhance the

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transport of dissociated charge carriers to respective electrodes,

causing an increase on the FF. Furthermore, our Cf results
indicate that light soaking decreases the bulk polarizations
within the perovskite film. Decreasing bulk polarizations can
reduce charge dissociation and increase the charge recombination, consequently generating a decrease on JSC. Clearly,
our CV, time-dependent PL and Cf measurements provide
new understanding on the light soaking effects and hysteresis
phenomena in generating photovoltaic processes in perovskite
solar cells.

Experimental Section
Device Fabrication: The CH3NH3I and PbCl2 were purchased from
1-Material and Alfa Aesar, respectively. The solar cells were fabricated
with the architecture of ITO/PEDOT:PSS/CH3NH3Pb3xClx/PCBM/Al.
The ITO glass substrates were cleaned sequentially by using detergent,
deionized water, acetone, and ethanol in ultrasonic bath, followed by
drying in vacuum oven. The PEDOT:PSS films with the thickness of
35 nm were spin-coated on the oxygen plasma-treated ITO substrates
and then annealed at 150 C for 30 min. For the perovskite layer, the
CH3NH3I and PbCl2 (molar ratio of 3:1) were mixed in anhydrous
dimethylformamide (Aldrich) with the concentration of 30 wt%.
This solution was spin coated with the thickness of 200 nm onto the
PEDOT:PSS layer and then annealed at 80 C for 2 h. Afterward, the
20 mg mL1 PCBM in chlorobenzene (Aldrich) was coated with the
thickness of 40 nm onto the perovskite layer. Then the aluminum (Al)
electrodes were thermally deposited with the thickness of 100 nm under
the vacuum of 2 106 Torr to fabricate perovskite solar cells.
Device Characterizations and Measurements: The IV characteristics
were recorded by using Keithley 2400 source meter under illumination
of AM 1.5G 100 mW cm2 from Newport solar simulator calibrated by
a silicon reference cell. The CV and Cf measurements were performed
by using a dielectric spectrometer (Agilent, 4294A) with alternating
voltage of 50 mV. All devices were measured with encapsulation. The
PL measurements were measured by a fluorescence spectrometer
(Edinburgh Instruments FLS920). The samples were encapsulated
before the measurements to avoid reaction with air atmosphere.

Acknowledgements
This research was supported by National Significant Program
(2014CB643506 and 2013CB922104). The authors also acknowledge the
support from photovoltaic Project (Gant No. 61475051) funded by the
National Natural Science Foundation of China.
Received: February 6, 2015
Revised: March 27, 2015
Published online:

[1] M. Liu, M. B. Johnston, H. J. Snaith, Nature 2013, 501, 395.

[2] P. Docampo, J. M. Ball, M. Darwich, G. E. Eperon, H. J. Snaith, Nat.
Commun. 2013, 4, 2761.
[3] J. You, Z. Hong, Y. M. Yang, Q. Chen, M. Cai, T.-B. Song, C.-C. Chen,
S. Lu, Y. Liu, H. Zhou, Y. Yang, ACS Nano 2014, 8, 1674.
[4] P. Gao, M. Grtzel, M. K. Nazeeruddin, Energy Environ. Sci. 2014, 7, 2448.
[5] T. C. Sum, N. Mathews, Energy Environ. Sci. 2014, 7, 2518.
[6] H. Zhou, Q. Chen, G. Li, S. Luo, T.-B. Song, H.-S. Duan, Z. Hong,
J. You, Y. Liu, Y. Yang, Science 2014, 345, 542.
[7] Best Research-Cell Efficiencies, www.nrel.gov/ncpv/images/efficiency_chart.jpg (accessed: May 2015).

1500279 (6 of 6)

wileyonlinelibrary.com

[8] S. D. Stranks, G. E. Eperon, G. Grancini, C. Menelaou,

M. J. P. Alcocer, T. Leijtens, L. M. Herz, A. Petrozza, H. J. Snaith,
Science 2013, 342, 341.
[9] G. Xing, N. Mathews, S. Sun, S. S. Lim, Y. M. Lam, M. Grtzel,
S. Mhaisalkar, T. C. Sum, Science 2013, 342, 344.
[10] C. Wehrenfennig, G. E. Eperon, M. B. Johnston, H. J. Snaith,
L. M. Herz, Adv. Mater. 2014, 26, 1584.
[11] S. Sun, T. Salim, N. Mathews, M. Duchamp, C. Boothroyd, G. Xing,
T. C. Sum, Y. M. Lam, Energy Environ. Sci. 2014, 7, 399.
[12] A. Marchioro, J. Teuscher, D. Friedrich, M. Kunst, R. van de Krol,
T. Moehl, M. Grtzel, J.-E. Moser, Nat. Photonics 2014, 8, 250.
[13] A. T. Barrows, A. J. Pearson, C. K. Kwak, A. D. F. Dunbar,
A. R. Buckley, D. G. Lidzey, Energy Environ. Sci. 2014, 7, 2944.
[14] E. L. Unger, E. T. Hoke, C. D. Bailie, W. H. Nguyen, A. R. Bowring,
T. Heumller, M. G. Christoforo, M. D. McGehee, Energy Environ.
Sci. 2014, 7, 3690.
[15] J. Wei, Y. Zhao, H. Li, G. Li, J. Pan, D. Xu, Q. Zhao, D. Yu, J. Phys.
Chem. Lett. 2014, 5, 3937.
[16] H.-S. Kim, N.-G. Park, J. Phys. Chem. Lett. 2014, 5, 2927.
[17] R. S. Sanchez, V. Gonzalez-Pedro, J.-W. Lee, N.-G. Park, Y. S. Kang,
I. Mora-Sero, J. Bisquert, J. Phys. Chem. Lett. 2014, 5, 2357.
[18] H. J. Snaith, A. Abate, J. M. Ball, G. E. Eperon, T. Leijtens,
N. K. Noel, S. D. Stranks, J. T.-W. Wang, K. Wojciechowski,
W. Zhang, J. Phys. Chem. Lett. 2014, 5, 1511.
[19] X. Wu, M. T. Trinh, D. Niesner, H. Zhu, Z. Norman, J. S. Owen,
O. Yaffe, B. J. Kudisch, X. Zhu, J. Am. Chem. Soc. 2015, 137, 2089.
[20] T. Leijtens, S. D. Stranks, G. E. Eperon, R. Lindblad,
E. M. J. Johansson, I. J. McPherson, H. Rensmo, J. M. Ball,
M. M. Lee, H. J. Snaith, ACS Nano 2014, 8, 7147.
[21] Y. Shao, Z. Xiao, C. Bi, Y. Yuan, J. Huang, Nat. Commun. 2014, 5, 5784.
[22] L. Cabau, L. Pellej, J. N. Clifford, C. V. Kumar, E. Palomares, J.
Mater. Chem. A 2013, 1, 8994.
[23] T. Kobayashi, H. Yamaguchi, T. Nakada, Prog. Photovolt: Res. Appl.
2014, 22, 115.
[24] P. Tiwana, P. Docampo, M. B. Johnston, L. M. Herz, H. J. Snaith,
Energy Environ. Sci. 2012, 5, 9566.
[25] L. Yang, B. Xu, D. Bi, H. Tian, G. Boschloo, L. Sun, A. Hagfeldt,
E. M. J. Johansson, J. Am. Chem. Soc. 2013, 135, 7378.
[26] C. E. Small, S. Chen, J. Subbiah, C. M. Amb, S.-W. Tsang, T.-H. Lai,
J. R. Reynolds, F. So, Nat. Photonics 2012, 6, 115.
[27] J. Kim, G. Kim, Y. Choi, J. Lee, S. H. Park, K. Lee, J. Appl. Phys. 2012,
111, 114511.
[28] S. Trost, K. Zilberberg, A. Behrendt, A. Polywka, P. Grrn, P. Reckers,
J. Maibach, T. Mayer, T. Riedl, Adv. Energy Mater. 2013, 3, 1437.
[29] H. Zang, Y. Liang, L. Yu, B. Hu, Adv. Energy Mater. 2011, 1, 923.
[30] H. Zang, Z. Xu, B. Hu, J. Phys. Chem. B 2010, 114, 5704.
[31] C. Zhao, X. Qiao, B. Chen, B. Hu, Org. Electron. 2013, 14, 2192.
[32] H. Zang, Y.-C. Hsiao, B. Hu, Phys. Chem. Chem. Phys. 2014, 16, 4971.
[33] W. Tress, N. Marinova, T. Moehl, S. M. Zakeeruddin,
M. K. Nazeeruddin, M. Grtzel, Energy Environ. Sci. 2015, 8, 995.
[34] Z. Xiao, Y. Yuan, Y. Shao, Q. Wang, Q. Dong, C. Bi, P. Sharma,
A. Gruverman, J. Huang, Nat. Mater. 2015, 14, 193.
[35] H.-S. Kim, I. Mora-Sero, V. Gonzalez-Pedro, F.-S. Francisco,
E. J. Juarez-Perez, N.-G. Park, J. Bisquert, Nat. Commun. 2013, 4, 2242.
[36] W.-J. Yin, T. Shi, Y. Yan, Appl. Phys. Lett. 2014, 104, 063903.
[37] I. A. Shkrob, T. W. Marin, J. Phys. Chem. Lett. 2014, 5, 1066.
[38] W. Zhang, M. Saliba, S. D. Stranks, Y. Sun, X. Shi, U. Wiesner,
H. J. Snaith, Nano Lett. 2013, 13, 4505.
[39] V. Roiati, S. Colella, G. Lerario, L. De Marco, A. Rizzo, A. Listorti,
G. Gigli, Energy Environ. Sci. 2014, 7, 1889.
[40] Y. Yamada, M. Endo, A. Wakamiya, Y. Kanemitsu, J. Phys. Chem.
Lett. 2015, 6, 482.
[41] V. Roiati, E. Mosconi, A. Listorti, S. Colella, G. Gigli, F. De Angelis,
Nano Lett. 2014, 14, 2168.

2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Adv. Energy Mater. 2015, 1500279