51.

3: ChemFET Arrays for Chemical Sensing Microsystems

Brian J. Polk
School of Chemishy and Biochemistry
Georgia Institute of Technology.
Atlanta, Georgia, USA
gt0058b@prism.gatech.edu

Abstract

power requirements, andor integration of system components. One chemical sensor that lends itself to all of these
miniaturization considerations is the chemically sensitive
field-effect transistor (ChemFET). The purpose of this
paper is to describe ChemFETs and ChemFET arrays in
relation to sensor microsystems and to discuss options for
tuning devices within an array.

Chemically sensitive field-effect transistors (ChemFETs).

among the smallest chemical sensors available to-date, are
attractive for use in integrated systems. Favorable attributes of the ChemFET array include inherent compatibility
with microfabricated electronics, small size of only 400 Fm
by 500 pm, low noise, and simple support circuitry.
ChemFET structure is similar to other insulated gatefieldeffect transistors except that the usual metal or polysilicon
gate conductor is replaced with a semiconducting polymer
or other chemically sensitive material. In this work, an
array of eight ChemFETs utilizing dxerent partially selective gate materials on each unit was constructed utilizing
mainly standard microfabrication techniques. Although
support electronics are currently housed off-chip, a prototype array format designed to allow forflip-chip bonding
of an ASIC service chip was also fabricated. Selectivity of
an individual sensor can be improved but, in practical
terms, the ensemble response of an array of devices is
needed to reliably identrfi a chemical vapor. In the case of
ChemFETs, the detection transduction mechanism is a
chemical modulation of the workfirnction (WF) of the gate
material by the analyte gas. Selectivity may be enhanced
by adjusting the initial WF of the conductingpolymer layer
relative to the electronegativity of an analyte gas. It is
shown in this work that solid-state WF adjustment ofpolyaniline, a semiconducting polymer, may be achieved
through proton dopingfrom photogenerated acid.

CHEMFET STRUCTURE
An idealized schematic cross section of a ChemFET is
shown in Figure 1. The device is essentially a large feature
size insulated gate field-effect transistor. The gate length is
typically -20 microns. The large feature size is dictated by
the need to have a minimum amount of chemically active
material in order to obtain sufficient signal. The essential
difference hetween a ChemFET and a typical FET for electronic applications is that the gate conductor material is
chosen such that its properties can be modulated by an extemal chemical stimulant. For example, an FET that can he

-c-- Current flow

Keywords
ChemFET, sensor array, work function, polyaniline, photo. doping
INTRODUCTION
Janata defines a chemical sensor as a device that provides
continuous information about its [chemical] environment[4]. Its purpose is to transduce changes in a chemical
environment into electrical signals. Sensor transduction
principles fall into four main categories - thermal, mass,
electrochemical, and optical[5]. Within each category,
devices which fit the general definition of chemical sensor
range widely in size and operational parameters. The
phrase chemical sensor microsystems overtly implies a
major goal of the technology is miniaturization. Size reduction may take the form of smaller physical size, lower

0-7803-7454-1/02/$17.00 02002 IEEE

p - T w Silicon Substnte

I
-

Figure 1. Idealized ChemFET cross section

schematic
used for detection of hydronium ion (i.e. pH) is one with a
bare insulator[5]. Ions will partition into the gate insulator
and modulate current flow between source and drain. This
configuration, however, requires an extemal refexence electrode. One of the first ChemFETs was the palladium gate
design investigated by Lundstrom[lO]. This devices uses
Pd metal as the gate conductor. Hydrogen is catalytically
dissociated at the metal surface then diffuses to the metal /
insulator interface where the H atom polarizes to induces

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modulations in the gate field effect. Many modem ChemFET structures utilize conducting polymers such as
polypyrrole or polyaniline as the gate conductors[2] and
are used as vapor sensors.

Fabrication
Fabrication of ChemFETs requires slightly different processing steps than a standard n-channel FET. One major
difference is that noble metals must be used for contact

ChemFET Transduction
The transduction principle for the modem ChemFET is a
chemical modulation of the electron work function of the
conducting polymer gate material[6]. The device threshold
voltage, Vr, is dependant on the difference between the
work function of the polymer, Opolyand that of silicon, Osi:

a Si - @ P o l y

Gate (20 pn length

The threshold voltage is determined from the drain current,

IDS vs. gate voltage, V, relationship for non-degenerate, nchannel devices in saturation:

I,

= Const(v, -

Impedahce Conlecl

vT1

$io, Surface Passivation

where Const is a constant governed by the fabrication parameters[l2]. Figure 2 gives an example of a measurement
circuit for measuring changes in the threshold voltage of
the gate conductor.

Figure 2. ChemFET top down view

leads to ensure chemical inertness. Another difference is
that the gate requires a low stress silicon nitride insulator.
This is deposited in a high temperature chemical vapor
deposition process and reduces the chance for pin hole defects. One last difference is that the surfaces of the devices
must be isolated from each other with a tall, inert polymeric
material. These wells are filled with solution during gate
conductor casting and electrochemical modification.

ADVANTAGES OF CHEMFETS FOR

MICROSYSTEMS
The ChemFET for detection of chemical vapors may he
compared with the competing technologies of surface
acoustic wave (SAW) devices and chemiresistors, both of
which and have utilized polymer active materials[l,l3,14].
SAW devices are mass sensor transducers that monitor the
change in frequency and phase angle of an acoustic wave
moving across the surface of a piezoelectric substrate. Active materials are coated over the device surface and the
acoustic signature changes as the layer absorbs vapors an
increases in mass. Chemiresistors are very simple devices
in which active materials are coated onto interdigitated
electrodes. The resistance between the digits is monitored.
The resistance of the loaded polymer is modulated by the
swelling of the polymer as it absorbs gases.
Different sensor technologies may compared with a number of parameters including size, sensitivity, noise, stability, and cost. Some factors are greatly influenced by the
choice of chemically active material while others tend to be
a function of the transducer.
A major objective of chemical sensor technology is to
miniaturize the size of the entire system - transducer,
power supply, interface, etc. ChemFETs are among the

-Figure 3. Measurement circuit for ChemFET

work function
Design
The FET design used in this work is shown in a top down
micrograph in Figure 3. The metallization layout is designed to allow simultaneous detection of work function
and impedance changes.. Potentials are applied at a single
gold lead which contacts both the drain and the gate. Thus,
the device is hard-wired in the source-follower configuration The source and substrate are grounded. 10s is kept
constant and gate voltage is monitored. A symmetrical
lead on top of, but not connected to the source provides a
contact point for monitoring the impedance of the chemically active layer.

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smallest chemical sensor transducers available. A conservative size estimate for a single device is 400 by 500 microns. Further, ChemFETs typically draw milliwatts or
less of power, reducing the need for a large power source.
ChemFETs are inherently compatible with silicon electronics. This suggests the possibility for greater system
integration by fabricating both interfacing and support circuits with the sensor on the same substrate. Such integration could lead to further gains in size and power needs.
ChemFET sensitivity is a logarithmic function of vapor
concentration[6]. This means a much broader dynamic
range than that of SAW devices or chemiresistors, both of
which have linear response curves[l,5,13]. Detection limits for some ChemFET systems in parts per billion @ph)
range have been reported; well helow the limit of most
chemical sensors[S].
A ChemFET designed to provide, both work function and
impedance, offers another advantage for microsystems.
Work function data gives information about the electron
affinity of the active layer, while impedance data yields
information on the charge carrier density and mobility.
This multidimensional information moves the ChemFET
into higher-order sensors with can provide several chemically orthogonal signals. Chemiresistors, in contrast, has
only impedance capability. SAW do have frequency and
phase shift information which can also be used to obtain
multidimensional data.

selectivity and dynamic range, and the number of simultaneous analytes. A simple illustration of array utility is the
pH test strip. Single component acid-base indicators m i cally can only response to pH changes over l or 2 pH units.
In contrast, the test strip, with many indicators on a single
sampling tool can resolve pH to within one unit or better.
This is possible. by analyzing the panern of colors generated. In fact, much of the current development of sensor
array technology comes from improving pattem recognition algorithms[9].
Arrays can improve signal to noise by averaging response
from many sensors. The optimum number of sensors has
been investigated[9,14]. It was found to be between 6 and
10.

ARRAY LAYOUT
The ChemFET has been used in an array format. This was
first done simply by using FETs on several different
chips[2]. A step towards system miniaturization was taken
when the array was fabricated on a single chip. In a simple
application, the chip contained only FETs. A more integrated design allows for flip-chip bonding of support electronics[ 111. Two integrated ChemFET array layouts are
shown in Figure 4.
IMPROVING CHEMICAL ORTHOGONALITY IN A
COMPACT ARRAY
The arrays shown in Figure 4 are just transduction platforms for chemical sensing. In order to make the device
function as intended, each element must he made chemically orthogonal to the others. The small overall dimensions of the array cause several engineering challenges to
tuning the properties of each individual device. It is desirable to fabricate ChemFETs at the wafer level for as many
processing steps as possible. For this reason, it is hener to
deposit the same gate conducting polymer on the whole
wafer, rather than deposit several different materials after
dicing.
The material of choice for ChemFET gate conductor is
polyaniline (PANI). The major property of interest for
ChemFETs is initial work function of PANI. Several
methods for adjusting the work function are known including electrochemical anion exchange[3] and exposure of dry
film to dopant solution[7].

ADVANTAGES OF AN ARRAY
There is no such thing as perfect selectivity for a single
sensor/analyte system. Even if perfect selectivity were
possible, then a single device could only provide i n f o m tion ahout a single analyte, and would not guarantee a
broad dynamic range. Because real world samples are mixtures, it is necessary to use an array of sensors to increase

A novel approach recently demonstrated was the use of

photochemistry to dope PANI and change its work function[l2]. In this method, polyaniline in the emeraldine
base form is cast from a solution along with triphenylsulfonium salts. When the polymer film is dry, it is exposed to
ultraviolet light, the Ph$ decomposes to release an acidic
proton. The photogenerated acid then protonates the PANI
into a different doping level and changes the work function.

Flip-chip bonde
electronic servica c

The photochemical tuning method offers the chance of

depositing the same gate conductor material on all devices,

Figure 4. ChemFET array design. A) design for

off-chip support electronics, B) design for integrated support electronics

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then tuning the initial threshold voltage of the device with

light. It is a much more precise method than others mentioned above and could be adapted for use at the wafer
level of fabrication.

[5] Janata, J., Principles afChemical Sensors, Plenum

Press, New York, NY (1989).
[6] Janata, J., and Josowicz, M., Chemical Modulation of
Work Function as a Transduction Mechanism for
Chemical Sensors, Acc. Chem. Res., vol. 31, pp. 241248, (1998).

SUMMARY
This paper described chemically sensitive field-effect transistors and pointed out some advantages for their use in
chemical sensing microsystems. Advantages include small
size, low power requirements, large dynamic range, and
compatibility with microfabricated electronics. The devices are best used in an array format. The array improves
signal to noise, selectivity, and dynamic range. Photochemical tuning of the gate material on individual devices
ensures chemical orthogonality

[7] Jung, J. H., Kim, B. H., Moon, B. W., Joo, J., Chang,
S. H., and Ryu, K. S., Charge Transport of LithiumSalt-Doped Polyaniline, Phys. Rev. B, vol. 64, pp.
035101-1 -8, (2001).
[SI Li, J., Janata, J., and Josowicz, M., Application of
Poly(cyc1ophosphazene) for Potentiometric Detection
of Tribuytl Phosphate Vapor, Electroanalysis, vol. 8,
pp. 778-783, (1996).
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Frye, G . C., Visual-Empirical Region-of-Influence
Pattern Recognition Applied to Chemical Microsensor
Array Selection and Chemical Analysis, Acc. Chem.
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A palladium-MOS structure as a hydrogen sensor in
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[ 131Ricco, A. J., SAW Chemical Sensors, Inferface,vol.
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Acknowledgments
Funding was provided by National Science Foundation
Grant No. CHE-9816017. The author wishes to thank Prof.
Denise Wilson of the University of Washington, Seattle for
providing the ChemFET measurement electronics.

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