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Lovely Professional University, Punjab

Course Code

Course Title

Course Planner

Lectures

Tutorials

Practicals

Credits

ECE206

ELECTRONIC DEVICES AND CIRCUITS

15699::Manjit

3.0

0.0

0.0

3.0

Course Category

Courses with conceptual focus

 

TextBooks

Sr No

Title

Author

Edition

Year

Publisher Name

T-1

Integrated Electronics: Analog & Digital Circuit Systems

Jacob Millman & Halkias

2nd

2005

Mc

graw Hill

 

Reference Books

   

Sr No

Title

Author

Edition

Year

Publisher Name

R-1

Electronic Devices & Circuits Theory

Robert L. Boylestad

9th

2008

Pearson

R-2

Semiconductor Physics and Devices (IRWIN)

D. A. Neamen

3rd

1997

Times Mirror High Education Group

R-3

Microelectronic Devices

E.S. Yang

4th

1988

Mc

graw Hill

R-4

Solid State Electronic Devices

B.G. Streetman

3rd

1995

 

Prentice Hall

R-5

Microelectronics

J. Millman and A. Grabel

4th

1987

 

McGraw-Hill

R-6

Microelectronic Circuits

A.S. Sedra and K.C. Smith

3rd

1991

Saunders College Pub.

 

Other Reading

Sr No

Journals articles as Compulsary reading (specific articles, complete reference)

 

OR-1

http://forum.jntuworld.com/showthread.php?3988-Electronics-devices-and-Circuits(EDC)-Notes-All-8-Units ,

 

OR-2

http://freedownloadpdfonlinesoftcopy.blogspot.in/2012/12/electronic-devices-and-circuits-by.html ,

 

OR-3

http://www.kinindia.com/university/electric-circuits-and-electron-devices-notes-ec2151-eced/ ,

 

OR-4

http://ebookcut.com/search/ebook/pdf/electronics-circuits-and-electronics-devices-lecture-notes.html ,

 

OR-5

http://engineeringppt.blogspot.in/2011/08/electronic-devices-and-circuits.html ,

 

OR-6

http://www.vidyarthiplus.com/vp/attachment.php?aid=7577 ,

 

OR-7

http://eng.upm.edu.my/~mariam/KKK%203201/notes_kkk3201.html ,

 
 

Relevant Websites

Sr No

(Web address) (only if relevant to the course)

 

Salient Features

 

RW-1

http://www.sli.ece.ufl.edu/eel6383/Chapter11.pdf

 

PN homo and hetro junction

 

RW-2

http://en.wikipedia.org/wiki/Capacitance_voltage_profiling

 
  • CV Characterstics

 

RW-3

http://www.home.agilent.com/upload/cmc_upload/All/59536939.pdf?&cc=IN&lc=eng

  • CV Characterstics

 

RW-4

http://www.ecse.rpi.edu/~schubert/2006-Course-ECSE-2210-Microelectronics-

Transient response

Technology/MT-21-Ch12-2.pdf

RW-5

http://solar.njit.edu/~leej/lecture/ph641/Ch04_summary.pdf

FERMI DIRAC

RW-6

http://whites.sdsmt.edu/classes/ee320/notes/320lecture4.pdf

Small signal diode model

RW-7

http://ee.eng.usm.my/eeacad/arjuna/Electronic%20device%20lecture3.pdf

Application of diodes

RW-8

http://www.prenhall.com/howe3/microelectronics/pdf_folder/lectures/mwf/lecture12.fm

MOSFET characteristics and small signal models

5.pdf

RW-9

http://www.ece.cmu.edu/~ee321/spring99/LECT/lect22apr9.pdf

Common source amplifier

RW-10

http://whites.sdsmt.edu/classes/ee320/notes/320lecture18.pdf

Common Emitter Amplifier

LTP week distribution: (LTP Weeks)

Weeks before MTE

7

Weeks After MTE

7

Spill Over

3

Detailed Plan For Lectures

Week

Lecture

Broad Topic(Sub Topic)

Chapters/Sections

Other Readings,

Lecture Description

Learning Outcomes

Pedagogical Tool

Number

Number

of Text/reference

Relevant

Demonstration/ Case

books

Websites, Audio

Study / Images /

Visual Aids,

animation / ppt etc.

software and

Planned

Virtual Labs

Week 1

Lecture 1

Modeling Devices(Static

T-1:3.4

OR-2

The lecture explains DC

A Student will come to

 

characteristics of ideal two terminal and three terminal devices)

R-1:1.8

OR-4

or Static characteristics of ideal two terminal and three terminal devices

know about basic two terminal and three terminal device and its static chracterstics

Lecture 2

Modeling Devices(Static

T-1:3.4

OR-2

The lecture explains DC

A Student will come to

 

characteristics of ideal two terminal and three terminal devices)

R-1:1.8

OR-4

or Static characteristics of ideal two terminal and three terminal devices

know about basic two terminal and three terminal device and its static chracterstics

Lecture 3

Modeling Devices(Static

T-1:3.4

OR-2

The lecture explains DC

A Student will come to

 

characteristics of ideal two terminal and three terminal devices)

R-1:1.8

OR-4

or Static characteristics of ideal two terminal and three terminal devices

know about basic two terminal and three terminal device and its static chracterstics

Week 2

Lecture 4

Modeling Devices(Small signal

T-1:3.13

 

The lecture describes

A Student will learn

discussion

models of non-linear devices)

R-2:8.2

Small signal models of nonlinear devices

about Small signal models of nonlinear devices

Week 2

Lecture 5

Modeling Devices(Small signal

T-1:3.13

 

The lecture describes

A Student will learn

discussion

models of non-linear devices)

R-2:8.2

Small signal models of nonlinear devices

about Small signal models of nonlinear devices

Lecture 6

Introduction to Semiconductor

T-1:3.1 2.10

OR-1

Poissons and continuity

A Student will learn

 

Equations and Carrier Statistics (Poisson's and continuity equations)

R-2:6.2.1

OR-3

equations

about Semiconductor Equations

Week 3

Lecture 7

Introduction to Semiconductor

T-1:3.1 2.10

OR-1

Poissons and continuity

A Student will learn

 

Equations and Carrier Statistics (Poisson's and continuity equations)

R-2:6.2.1

OR-3

equations

about Semiconductor Equations

Lecture 8

Introduction to Semiconductor

T-1:19.2

RW-5

FermiDirac statistics and

A Student will learn

animation for the fermi

Equations and Carrier Statistics (Fermi-Dirac statistics and Boltzmann approximation to the Fermi-Dirac statistics)

R-2:3.5.2-3.5.3 3.3

Boltzmann approximation to the FermiDirac statistics

about FermiDirac statistics and Boltzmann approximation

dirac stastics

Lecture 9

Introduction to Semiconductor

T-1:19.2

RW-5

FermiDirac statistics and

A Student will learn

animation for the fermi

Equations and Carrier Statistics (Fermi-Dirac statistics and Boltzmann approximation to the Fermi-Dirac statistics)

R-2:3.5.2-3.5.3 3.3

Boltzmann approximation to the FermiDirac statistics

about FermiDirac statistics and Boltzmann approximation

dirac stastics

Week 4

Lecture 10

     

Quiz,Test 1

   

Lecture 11

Semiconductor Diode(Barrier

T-1:3.1-3.3

 

Barrier formation in

A student will learn

discussion

formation in metal-semiconductor

R-1:1.1-1.2

metalsemiconductor

basic construction of

junctions)

R-2:7.1-7.2

junctions

semiconductor diodes and its junction formation

Lecture 12

Semiconductor Diode(Barrier

T-1:3.1-3.3

 

Barrier formation in

A student will learn

discussion

formation in metal-semiconductor

R-1:1.1-1.2

metalsemiconductor

basic construction of

junctions)

R-2:7.1-7.2

junctions

semiconductor diodes and its junction formation

Week 5

Lecture 13

Semiconductor Diode(PN homo- and hetero- junctions)

R-2:9.3

RW-1

PN homo and hetero junctions

A student will learn junctions of semiconductor diode

 

Lecture 14

Semiconductor Diode(PN homo- and hetero- junctions)

R-2:9.3

RW-1

PN homo and hetero junctions

A student will learn junctions of semiconductor diode

 

Lecture 15

Semiconductor Diode(CV

T-1:3.9

RW-2

CV characteristics and

A student will learn CV

 

characteristics and dopant profiling)

R-1:1.11

RW-3

dopant profiling

chracterstics of smiconductor diode

Week 6

Lecture 16

Semiconductor Diode(IV

T-1:3.4-3.5

 

IV characteristics of

A student will learn IV

Animations of the VI

characteristics)

R-1:1.3

Semiconductor Diodes

characterstics of

characteristics of diode

R-2:8.1

semiconductor iode

Week 6

Lecture 17

Semiconductor Diode(Small signal

T-1:4.3

RW-6

Small signal models of

A student will learn

 

models of diodes)

R-1:1.9

diodes

small signal model of

R-2:8.2

semiconductor diodes

Lecture 18

Semiconductor Diode(Small signal

T-1:4.3

RW-6

Small signal models of

A student will learn

 

models of diodes)

R-1:1.9

diodes

small signal model of

R-2:8.2

semiconductor diodes

Week 7

Lecture 19

     

Quiz,Test 2

   

Lecture 20

Semiconductor Diode(Some

T-1:3.12-3.13

RW-7

Applications of diodes to

A student will learn

Discussion

Applications of diodes)

R-1:2.7-2.11

be taught in Lecture 20

some basic application

R-2:14.3-14.5 8.6

of diodes and their uses

Lecture 21 Reserved for contingency plan

In Lecture 21 students will be able to do the revision of the course before MTE

Lecture 21

Semiconductor Diode(Some

T-1:3.12-3.13

RW-7

Applications of diodes to

A student will learn

Discussion

Applications of diodes)

R-1:2.7-2.11

be taught in Lecture 20

some basic application

R-2:14.3-14.5 8.6

of diodes and their uses

Lecture 21 Reserved for contingency plan

In Lecture 21 students will be able to do the revision of the course before MTE

   

MID-TERM

 

Week 8

Lecture 22

Field Effect Devices(JFET/HFET)

T-1:10.1-10.3

OR-5

Basic introduction to

A student will learn

animations of the

R-1:5.1-5.2

OR-6

JFET HFET

basic construction of

diagram of JFET

R-2:13.1

OR-7

JFET

Lecture 23

Field Effect Devices(MIS

T-1:10.5

 

MIS structures and

A student will learn

 

structures and MOSFET operation)

R-2:11.1-11.3

MOSFET operation

basic construction AND operation of MOSFET

Lecture 24

Field Effect Devices(MIS

T-1:10.5

 

MIS structures and

A student will learn

 

structures and MOSFET operation)

R-2:11.1-11.3

MOSFET operation

basic construction AND operation of MOSFET

Week 9

Lecture 25

Field Effect Devices(JFET

T-1:10.4

 

JFET characteristics and

A student will learn

animations of the

characteristics and small signal models)

R-2:13.4

small signal models

JFET characteristics and small signal models

characteristics of small signal model

Lecture 26

Field Effect Devices(JFET

T-1:10.4

 

JFET characteristics and

A student will learn

animations of the

characteristics and small signal models)

R-2:13.4

small signal models

JFET characteristics and small signal models

characteristics of small signal model

Lecture 27

Field Effect Devices(MOS capacitor CV and concept of accumulation)

R-2:11.2

 

MOS capacitor CV and concept of accumulation

A student will understand the concept of accumulation and CV characterstics of MOS

brainstorming

Week 10

Lecture 28

Field Effect Devices(MOS capacitor CV and concept of accumulation)

R-2:11.2

 

MOS capacitor CV and concept of accumulation

A student will understand the concept of accumulation and CV characterstics of MOS

brainstorming

Lecture 29

Field Effect Devices(Depletion and

T-1:10.5-10.7

 

Depletion and inversion

A student will learn

 

inversion)

R-1:5.7

mode

basi operational modes

R-2:11.3-11.4

of MOSFET

Lecture 30

Field Effect Devices(MOSFET

T-1:10.5-10.7

RW-8

MOSFET characteristics

A student will learn

Discussion

characteristics and small signal

R-1:9.10 -9.11

and small signal models

MOSFET

models)

R-2:11.3-11.4

characteristics and small signal models

Week 11

Lecture 31

Field Effect Devices(MOSFET

T-1:10.5-10.7

RW-8

MOSFET characteristics

A student will learn

Discussion

characteristics and small signal

R-1:9.10 -9.11

and small signal models

MOSFET

models)

R-2:11.3-11.4

characteristics and small signal models

Lecture 32

Bipolar transistors(IV

T-1:5.1-5.6 5.12

 

IV characteristics and

A student will learn

 

characteristics and elers-Moll

R-1:3.1-3.3

elersMoll model

BJT IV characteristics

model)

R-2:10.5.1

and elersMoll model

Lecture 33

Bipolar transistors(IV

T-1:5.1-5.6 5.12

 

IV characteristics and

A student will learn

 

characteristics and elers-Moll

R-1:3.1-3.3

elersMoll model

BJT IV characteristics

model)

R-2:10.5.1

and elersMoll model

Week 12

Lecture 34

     

Quiz,Test 3

   

Lecture 35

Bipolar transistors(Small signal models)

T-1:8.3-8.5

 

Small signal models of Bipolar transistors

A student will learn Small signal models of BJT

animations containing the small signal model

Lecture 36

Bipolar transistors(Small signal models)

T-1:8.3-8.5

 

Small signal models of Bipolar transistors

A student will learn Small signal models of BJT

animations containing the small signal model

Week 13

Lecture 37

Bipolar transistors(Charge storage and transient response)

T-1:5.5

RW-4

Charge storage and transient response

A student will learn transient response and charge storage of BJTs

 

Lecture 38

Bipolar transistors(Charge storage and transient response)

T-1:5.5

RW-4

Charge storage and transient response

A student will learn transient response and charge storage of BJTs

 

Lecture 39

Discrete transistor amplifiers

T-1:5.6-5.10 10.7

RW-9

Common emitter and

A student will learn

brainstorming

(Common emitter and common

R-1:8.5 9.6

RW-10

common source

basic configuration of

source amplifiers)

R-2:10.1-10.2

amplifiers

BJT and FET

Week 14

Lecture 40

Discrete transistor amplifiers

T-1:5.6-5.10 10.7

RW-9

Common emitter and

A student will learn

brainstorming

(Common emitter and common

R-1:8.5 9.6

RW-10

common source

basic configuration of

source amplifiers)

R-2:10.1-10.2

amplifiers

BJT and FET

Week 14

Lecture 41

Discrete transistor amplifiers

T-1:5.6-5.10 10.7

 

Emitter and source

A student will learn

Discussion

(Emitter and source followers)

R-1:9.6 8.5

followers to be taught in

basic configuration of

R-2:10.1-10.2

lecure no 41

BJT and FET

Lecture 42 will be reserved for contingency

In Lecture 42 the students will be able to do the revision of all the course taught after MTE

Lecture 42

Discrete transistor amplifiers

T-1:5.6-5.10 10.7

 

Emitter and source

A student will learn

Discussion

(Emitter and source followers)

R-1:9.6 8.5

followers to be taught in

basic configuration of

R-2:10.1-10.2

lecure no 41

BJT and FET

Lecture 42 will be reserved for contingency

In Lecture 42 the students will be able to do the revision of all the course taught after MTE

   

SPILL OVER

 

Week 15

Lecture 43

     

Spill Over

   

Lecture 44

     

Spill Over

   

Lecture 45

     

Spill Over

   

Scheme for CA:

Component

Frequency

Out Of

Each Marks

Total Marks

Quiz,Test

2

3

 
  • 10 20

 

Total :-

 
  • 10 20

Details of Academic Task(s)

AT No.

Objective

Topic of the Academic Task

Nature of Academic Task

Evaluation Mode

Allottment /

(group/individuals/field work

submission Week

Test 2

To test the students knowledge regarding the course

JFET/HFET, MIS structures and MOSFET operation, JFET characteristics and small signal models, MOS capacitor CV and concept of accumulation, Depletion and inversion, MOSFET characteristics and small signal models,IV characteristics and elers-Moll model

Individual

Each question carry 5 marks or multiple of 5.

10 / 11

Quiz,Test 1

To test the student graasping nd learning capability in class

Unit-1 and Unit-2 to be covered in the test

Individual

The test is of 30 marks and each question carries 5 marks or multiple of 5 .The test should be conceptual and numerical based

  • 2 / 4

Quiz,Test 2

To prepare student for higher competitive exams

UNIT-3

Individual

The total quiz is of 30 marks .Each question carries one marks and negative marking is also their by deduction of 25% marks after each wrong answer

  • 5 / 6