Lovely Professional University, Punjab

Course Code

Course Title

Course Planner

ECE206

ELECTRONIC DEVICES AND CIRCUITS

15699::Manjit

Course Category

Courses with conceptual focus

Lectures
3.0

Tutorials Practicals Credits

0.0

TextBooks
Sr No

Title

Author

Edition

Year

Publisher Name

T-1

Integrated Electronics: Analog &

Digital Circuit Systems

Jacob Millman & Halkias

2nd

2005

Mc graw Hill

Author

Edition

Year

Publisher Name

Reference Books
Sr No

Title

R-1

Electronic Devices & Circuits Theory Robert L. Boylestad

9th

2008

Pearson

R-2

Semiconductor Physics and Devices

(IRWIN)

D. A. Neamen

3rd

1997

Times Mirror High Education Group

R-3

Microelectronic Devices

E.S. Yang

4th

1988

Mc graw Hill

R-4

Solid State Electronic Devices

B.G. Streetman

3rd

1995

Prentice Hall

R-5

Microelectronics

J. Millman and A. Grabel

4th

1987

McGraw-Hill

R-6

Microelectronic Circuits

A.S. Sedra and K.C. Smith 3rd

1991

Saunders College Pub.

Other Reading
Sr No

Journals articles as Compulsary reading (specific articles, complete reference)

OR-1

http://forum.jntuworld.com/showthread.php?3988-Electronics-devices-and-Circuits(EDC)-Notes-All-8-Units ,

OR-2

http://freedownloadpdfonlinesoftcopy.blogspot.in/2012/12/electronic-devices-and-circuits-by.html ,

OR-3

http://www.kinindia.com/university/electric-circuits-and-electron-devices-notes-ec2151-eced/ ,

OR-4

http://ebookcut.com/search/ebook/pdf/electronics-circuits-and-electronics-devices-lecture-notes.html ,

OR-5

http://engineeringppt.blogspot.in/2011/08/electronic-devices-and-circuits.html ,

OR-6

http://www.vidyarthiplus.com/vp/attachment.php?aid=7577 ,

OR-7

http://eng.upm.edu.my/~mariam/KKK%203201/notes_kkk3201.html ,

Relevant Websites
Sr No

(Web address) (only if relevant to the course)

Salient Features

RW-1

http://www.sli.ece.ufl.edu/eel6383/Chapter11.pdf

PN homo and hetro junction

RW-2

http://en.wikipedia.org/wiki/Capacitance_voltage_profiling

CV Characterstics

RW-3

http://www.home.agilent.com/upload/cmc_upload/All/59536939.pdf?&cc=IN&lc=eng

CV Characterstics

0.0

3.0

RW-4

http://www.ecse.rpi.edu/~schubert/2006-Course-ECSE-2210-MicroelectronicsTechnology/MT-21-Ch12-2.pdf

Transient response

RW-5

http://solar.njit.edu/~leej/lecture/ph641/Ch04_summary.pdf

FERMI DIRAC

RW-6

http://whites.sdsmt.edu/classes/ee320/notes/320lecture4.pdf

Small signal diode model

RW-7

http://ee.eng.usm.my/eeacad/arjuna/Electronic%20device%20lecture3.pdf

Application of diodes

RW-8

http://www.prenhall.com/howe3/microelectronics/pdf_folder/lectures/mwf/lecture12.fm MOSFET characteristics and small signal models

5.pdf

RW-9

http://www.ece.cmu.edu/~ee321/spring99/LECT/lect22apr9.pdf

Common source amplifier

RW-10

http://whites.sdsmt.edu/classes/ee320/notes/320lecture18.pdf

Common Emitter Amplifier

LTP week distribution: (LTP Weeks)

Weeks before MTE

Weeks After MTE

Spill Over

Detailed Plan For Lectures

Week
Number

Lecture
Number

Broad Topic(Sub Topic)

Week 1

Lecture 1

Modeling Devices(Static
characteristics of ideal two
terminal and three terminal
devices)

T-1:3.4
R-1:1.8

OR-2
OR-4

The lecture explains DC

or Static characteristics
of ideal two terminal and
three terminal devices

A Student will come to

know about basic two
terminal and three
terminal device and its
static chracterstics

Lecture 2

Modeling Devices(Static
characteristics of ideal two
terminal and three terminal
devices)

T-1:3.4
R-1:1.8

OR-2
OR-4

The lecture explains DC

or Static characteristics
of ideal two terminal and
three terminal devices

A Student will come to

know about basic two
terminal and three
terminal device and its
static chracterstics

Lecture 3

Modeling Devices(Static
characteristics of ideal two
terminal and three terminal
devices)

T-1:3.4
R-1:1.8

OR-2
OR-4

The lecture explains DC

or Static characteristics
of ideal two terminal and
three terminal devices

A Student will come to

know about basic two
terminal and three
terminal device and its
static chracterstics

Lecture 4

Modeling Devices(Small signal

models of non-linear devices)

T-1:3.13
R-2:8.2

The lecture describes

Small signal models of
nonlinear devices

A Student will learn

about Small signal
models of nonlinear
devices

Week 2

Chapters/Sections
of Text/reference
books

Other Readings, Lecture Description

Relevant
Websites, Audio
Visual Aids,
software and
Virtual Labs

Learning Outcomes

Pedagogical Tool
Demonstration/ Case
Study / Images /
animation / ppt etc.
Planned

discussion

Week 2

Week 3

Week 4

Week 5

Week 6

Lecture 5

Modeling Devices(Small signal

models of non-linear devices)

T-1:3.13
R-2:8.2

The lecture describes

Small signal models of
nonlinear devices

A Student will learn

about Small signal
models of nonlinear
devices

Lecture 6

Introduction to Semiconductor
Equations and Carrier Statistics
(Poisson's and continuity
equations)

T-1:3.1 2.10
R-2:6.2.1

Lecture 7

Introduction to Semiconductor
Equations and Carrier Statistics
(Poisson's and continuity
equations)

Lecture 8

Lecture 9

OR-1
OR-3

Poissons and continuity

equations

A Student will learn

about Semiconductor
Equations

T-1:3.1 2.10
R-2:6.2.1

OR-1
OR-3

Poissons and continuity

equations

A Student will learn

about Semiconductor
Equations

Introduction to Semiconductor
Equations and Carrier Statistics
(Fermi-Dirac statistics and
Boltzmann approximation to the
Fermi-Dirac statistics)

T-1:19.2
R-2:3.5.2-3.5.3 3.3

RW-5

FermiDirac statistics and

Boltzmann
approximation to the
FermiDirac statistics

A Student will learn

about FermiDirac
statistics and
Boltzmann
approximation

animation for the fermi

dirac stastics

Introduction to Semiconductor
Equations and Carrier Statistics
(Fermi-Dirac statistics and
Boltzmann approximation to the
Fermi-Dirac statistics)

T-1:19.2
R-2:3.5.2-3.5.3 3.3

RW-5

FermiDirac statistics and

Boltzmann
approximation to the
FermiDirac statistics

A Student will learn

about FermiDirac
statistics and
Boltzmann
approximation

animation for the fermi

dirac stastics

Lecture 10

discussion

Quiz,Test 1

Lecture 11

Semiconductor Diode(Barrier
formation in metal-semiconductor
junctions)

T-1:3.1-3.3
R-1:1.1-1.2
R-2:7.1-7.2

Barrier formation in
metalsemiconductor
junctions

A student will learn

basic construction of
semiconductor diodes
and its junction
formation

discussion

Lecture 12

Semiconductor Diode(Barrier
formation in metal-semiconductor
junctions)

T-1:3.1-3.3
R-1:1.1-1.2
R-2:7.1-7.2

Barrier formation in
metalsemiconductor
junctions

A student will learn

basic construction of
semiconductor diodes
and its junction
formation

discussion

Lecture 13

Semiconductor Diode(PN homoand hetero- junctions)

R-2:9.3

RW-1

PN homo and hetero

junctions

A student will learn

junctions of
semiconductor diode

Lecture 14

Semiconductor Diode(PN homoand hetero- junctions)

R-2:9.3

RW-1

PN homo and hetero

junctions

A student will learn

junctions of
semiconductor diode

Lecture 15

Semiconductor Diode(CV
characteristics and dopant
profiling)

T-1:3.9
R-1:1.11

RW-2
RW-3

CV characteristics and
dopant profiling

A student will learn CV

chracterstics of
smiconductor diode

Lecture 16

Semiconductor Diode(IV
characteristics)

T-1:3.4-3.5
R-1:1.3
R-2:8.1

IV characteristics of
Semiconductor Diodes

A student will learn IV Animations of the VI

characterstics of
characteristics of diode
semiconductor iode

Week 6

Week 7

Lecture 17

Semiconductor Diode(Small signal

models of diodes)

T-1:4.3
R-1:1.9
R-2:8.2

RW-6

Small signal models of

diodes

A student will learn

small signal model of
semiconductor diodes

Lecture 18

Semiconductor Diode(Small signal

models of diodes)

T-1:4.3
R-1:1.9
R-2:8.2

RW-6

Small signal models of

diodes

A student will learn

small signal model of
semiconductor diodes

Lecture 19

Quiz,Test 2

Lecture 20

Semiconductor Diode(Some
Applications of diodes)

T-1:3.12-3.13
R-1:2.7-2.11
R-2:14.3-14.5 8.6

RW-7

Applications of diodes to A student will learn

Discussion
be taught in Lecture 20 some basic application
of diodes and their uses
Lecture 21 Reserved for
contingency plan
In Lecture 21 students
will be able to do the
revision of the course
before MTE

Lecture 21

Semiconductor Diode(Some
Applications of diodes)

T-1:3.12-3.13
R-1:2.7-2.11
R-2:14.3-14.5 8.6

RW-7

Applications of diodes to A student will learn

Discussion
be taught in Lecture 20 some basic application
of diodes and their uses
Lecture 21 Reserved for
contingency plan
In Lecture 21 students
will be able to do the
revision of the course
before MTE

MID-TERM
Week 8

Week 9

Lecture 22

Field Effect Devices(JFET/HFET)

T-1:10.1-10.3
R-1:5.1-5.2
R-2:13.1

OR-5
OR-6
OR-7

Basic introduction to
JFET HFET

A student will learn

basic construction of
JFET

T-1:10.5
R-2:11.1-11.3

MIS structures and

MOSFET operation

A student will learn

basic construction AND
operation of MOSFET

T-1:10.5
R-2:11.1-11.3

MIS structures and

MOSFET operation

A student will learn

basic construction AND
operation of MOSFET

animations of the
diagram of JFET

Lecture 23

Field Effect Devices(MIS

structures and MOSFET operation)

Lecture 24

Field Effect Devices(MIS

structures and MOSFET operation)

Lecture 25

Field Effect Devices(JFET

characteristics and small signal
models)

T-1:10.4
R-2:13.4

JFET characteristics and A student will learn

animations of the
small signal models
JFET characteristics
characteristics of small
and small signal models signal model

Lecture 26

Field Effect Devices(JFET

characteristics and small signal
models)

T-1:10.4
R-2:13.4

JFET characteristics and A student will learn

animations of the
small signal models
JFET characteristics
characteristics of small
and small signal models signal model

Lecture 27

Field Effect Devices(MOS

capacitor CV and concept of
accumulation)

R-2:11.2

MOS capacitor CV and A student will

brainstorming
concept of accumulation understand the concept
of accumulation and
CV characterstics of
MOS

Week 10

Week 11

Week 12

Week 13

Week 14

Lecture 28

Field Effect Devices(MOS

capacitor CV and concept of
accumulation)

R-2:11.2

MOS capacitor CV and A student will

brainstorming
concept of accumulation understand the concept
of accumulation and
CV characterstics of
MOS

Lecture 29

Field Effect Devices(Depletion and

inversion)

T-1:10.5-10.7
R-1:5.7
R-2:11.3-11.4

Lecture 30

Field Effect Devices(MOSFET

characteristics and small signal
models)

T-1:10.5-10.7
R-1:9.10 -9.11
R-2:11.3-11.4

RW-8

MOSFET characteristics A student will learn

and small signal models MOSFET
characteristics and
small signal models

Discussion

Lecture 31

Field Effect Devices(MOSFET

characteristics and small signal
models)

T-1:10.5-10.7
R-1:9.10 -9.11
R-2:11.3-11.4

RW-8

MOSFET characteristics A student will learn

and small signal models MOSFET
characteristics and
small signal models

Discussion

Lecture 32

Bipolar transistors(IV
characteristics and elers-Moll
model)

T-1:5.1-5.6 5.12
R-1:3.1-3.3
R-2:10.5.1

IV characteristics and
elersMoll model

A student will learn

BJT IV characteristics
and elersMoll model

Lecture 33

Bipolar transistors(IV
characteristics and elers-Moll
model)

T-1:5.1-5.6 5.12
R-1:3.1-3.3
R-2:10.5.1

IV characteristics and
elersMoll model

A student will learn

BJT IV characteristics
and elersMoll model

Depletion and inversion

mode

Lecture 34

A student will learn

basi operational modes
of MOSFET

Quiz,Test 3

Lecture 35

Bipolar transistors(Small signal

models)

T-1:8.3-8.5

Small signal models of

Bipolar transistors

A student will learn

animations containing
Small signal models of the small signal model
BJT

Lecture 36

Bipolar transistors(Small signal

models)

T-1:8.3-8.5

Small signal models of

Bipolar transistors

A student will learn

animations containing
Small signal models of the small signal model
BJT

Lecture 37

Bipolar transistors(Charge storage

and transient response)

T-1:5.5

RW-4

Charge storage and

transient response

A student will learn

transient response and
charge storage of BJTs

Lecture 38

Bipolar transistors(Charge storage

and transient response)

T-1:5.5

RW-4

Charge storage and

transient response

A student will learn

transient response and
charge storage of BJTs

Lecture 39

Discrete transistor amplifiers

(Common emitter and common
source amplifiers)

T-1:5.6-5.10 10.7
R-1:8.5 9.6
R-2:10.1-10.2

RW-9
RW-10

Common emitter and

common source
amplifiers

A student will learn

basic configuration of
BJT and FET

brainstorming

Lecture 40

Discrete transistor amplifiers

(Common emitter and common
source amplifiers)

T-1:5.6-5.10 10.7
R-1:8.5 9.6
R-2:10.1-10.2

RW-9
RW-10

Common emitter and

common source
amplifiers

A student will learn

basic configuration of
BJT and FET

brainstorming

Week 14

Lecture 41

Discrete transistor amplifiers

(Emitter and source followers)

T-1:5.6-5.10 10.7
R-1:9.6 8.5
R-2:10.1-10.2

Emitter and source

A student will learn
followers to be taught in basic configuration of
lecure no 41
BJT and FET

Discussion

Lecture 42 will be
In Lecture 42 the
reserved for contingency students will be able to
do the revision of all
the course taught after
MTE
Lecture 42

Discrete transistor amplifiers

(Emitter and source followers)

T-1:5.6-5.10 10.7
R-1:9.6 8.5
R-2:10.1-10.2

Emitter and source

A student will learn
followers to be taught in basic configuration of
lecure no 41
BJT and FET

Discussion

Lecture 42 will be
In Lecture 42 the
reserved for contingency students will be able to
do the revision of all
the course taught after
MTE

SPILL OVER
Week 15

Lecture 43

Spill Over

Lecture 44

Spill Over

Lecture 45

Spill Over

Scheme for CA:

Component

Frequency

Quiz,Test

Out Of
2

Each Marks Total Marks

3

Total :-

10

20

10

20

Details of Academic Task(s)

AT No.

Test 2

Objective

Topic of the Academic Task

To test the students JFET/HFET, MIS structures and MOSFET operation, JFET
knowledge regarding characteristics and small signal models, MOS capacitor CV and
the course
concept of
accumulation, Depletion and inversion, MOSFET characteristics
and small signal models,IV characteristics and elers-Moll model

Nature of Academic Task

(group/individuals/field
work
Individual

Evaluation Mode

Allottment /
submission Week

Each question carry

5 marks or multiple
of 5.

10 / 11

Quiz,Test 1

To test the student

graasping nd
learning capability
in class

Unit-1 and Unit-2 to be covered in the test

Individual

The test is of 30
marks and each
question carries 5
marks or multiple of
5 .The test should
be conceptual and
numerical based

2/4

Quiz,Test 2

To prepare student
for higher
competitive exams

UNIT-3

Individual

The total quiz is of

30 marks .Each
question carries one
marks and negative
marking is also their
by deduction of
25% marks after
each wrong answer

5/6