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OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
OPAx835 Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp
2 Applications
3 Description
The OPA835 and OPA2835 devices are single and
dual ultra-low power, rail-to-rail output, negative rail
input,
voltage-feedback
operational
amplifiers
designed to operate over a power supply range of
2.5-V to 5.5-V single supply or 1.25-V to 2.75-V
dual supply. Consuming only 250 A per channel and
a unity gain bandwidth of 56 MHz, these amplifiers
set an industry-leading performance-to-power ratio for
rail-to-rail amplifiers.
OPA2835
PACKAGE
SOT-23 (6)
2.90 mm 1.60 mm
WQFN (10)
2.00 mm 2.00 mm
SOIC (8)
4.90 mm 3.91 mm
VSSOP (10)
3.00 mm 3.00 mm
UQFN (10)
2.00 mm 2.00 mm
WQFN (10)
2.00 mm 2.00 mm
-50
VS = 5 V,
G = 1,
VOUT = 2 Vpp,
-60
RL = 2 kW
-40
1 Features
RF = 0 W,
-70
-80
-90
HD2
-100
-110
HD3
-120
-130
-140
10k
100k
1M
10M
f - Frequency - Hz
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
OPA835-Related Devices ......................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
1
1
1
2
4
4
6
8.1
8.2
8.3
8.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
25
25
25
28
43
43
43
43
43
4 Revision History
Changes from Revision E (July 2013) to Revision F
Page
Added Pin Configuration and Functions section, ESD Ratings table, Switching Characteristics tables, Feature
Description section, Device Functional Modes, Application and Implementation section, Power Supply
Recommendations section, Layout section, Device and Documentation Support section, and Mechanical,
Packaging, and Orderable Information section ..................................................................................................................... 1
Moved the switching parameters from the Electrical Characteristics tables into Switching Characteristics tables. ............ 11
Page
Page
Changed Quiescent operating current To: Quiescent operating current per amplifier........................................................... 9
Changed Quiescent operating current To: Quiescent operating current per amplifer.......................................................... 11
OPA835, OPA2835
www.ti.com
Page
Removed Product Preview from all devices except OPA835IRUNT and OPA835IRUNR .................................................... 4
Changed - Channel to channel crosstalk (OPA2835) Typ value From: TBD To: 120 dB .................................................... 7
Changed the Common-mode rejection ratio Min value From: 91 dB To: 88 dB .................................................................... 8
Changed the Quiescent operating current (TA = 25C) Min value From: 190 A To: 175 A ............................................... 9
Changed the Power supply rejection (PSRR) Min value From: 91 dB To: 88 dB ................................................................ 9
Changed the Power-down pin bias current CONDITIONS From: PD = 0.7 V To: PD = 0.5 V .............................................. 9
Changed the Power-down quiescent current CONDITIONS From: PD = 0.7 V To: PD = 0.5 V ........................................... 9
Changed - Channel to channel crosstalk (OPA2835) Typ value From: TBD To: -120 dB..................................................... 9
Changed the Common-mode rejection ratio MIN value From: 94 dB To: 91 dB ................................................................. 10
Changed the Quiescent operating current (TA = 25C) Min value From: 215 A To: 200 A ............................................. 11
Changed the Power supply rejection (PSRR) Min value From: 93 dB To: 90 dB .............................................................. 11
Changed the Power-down quiescent current CONDITIONS From: PD = 0.7 V To: PD = 0.5 V ......................................... 11
Changed the Power-down quiescent current CONDITIONS From: PD = 0.7 V To: PD = 0.5 V ......................................... 11
Page
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
5 OPA835-Related Devices
BW (AV = 1)
MHz
SLEW RATE
V/sec
Iq (+5 V)
mA
INPUT NOISE
nV/Hz
RAIL-TO-RAIL IN/OUT
DUALS
OPA2835
30
110
0.25
9.3
VS/Out
OPA2835
OPA365
50
25
4.5
In/Out
OPA2365
THS4281
95
35
0.75
12.5
In/Out
LMH6618
140
45
1.25
10
In/Out
LMH6619
OPA836
205
560
4.6
VS/Out
OPA2836
OPA830
310
600
3.9
9.5
VS/Out
OPA2830
PART NUMBER
OPA2835 D Package
8-Pin SOIC
Top View
VOUT
VS+
VS-
PD
VIN+
+ 4
VIN-
VOUT1
VIN1-
VIN1+
VS-
10
FB1
FB2
2.4k
VIN-
- +
2
VOUT1
VIN1-
VIN1+
VS-
PD1
1.8k
VIN+
FB3
FB4
600
PD
VS+
VOUT2
VIN2-
VIN2+
VS+
VOUT
10
+
+
VS+
VOUT2
VIN2-
VIN2+
PD2
VS-
OPA835, OPA2835
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VS+
VOUT1
VIN1-
VIN1+
PD1
10
VOUT2
VIN2-
VIN2+
PD2
+ -
- +
VS-
Pin Functions
PIN
OPA835
NAME
SOT-23
OPA2835
WQFN
SOIC
VSSOP
TYPE
DESCRIPTION
WQFN,
UQFN
FB1
I/O
FB2
I/O
I/O
I/O
FB3
FB4
PD
PD1
PD2
VIN+
VIN
VIN1+
VIN1
VIN2+
VIN2
VOUT
VOUT1
Amplifier output
Amplifier 1 output
Amplifier 2 output
VS+
10
10
10
POW
VS
POW
VOUT2
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
5.5
VS+ + 0.7
VS to VS+
Supply voltage
VI
Input voltage
VID
II
0.85
mA
IO
60
mA
VS 0.7
See Thermal
Information: OPA835
and Thermal
Information: OPA2835
150
TA
40
125
Tstg
Storage temperature
65
150
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1)
(2)
Electrostatic discharge
(1)
UNIT
6000
1000
Machine model
200
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
NOM
MAX
VS+
2.5
5.5
UNIT
V
TA
Ambient temperature
40
25
125
(1)
DBV
(SOT23-6)
RUN
(WQFN)
6 PINS
10 PINS
194
UNIT
RJA
145.8
C/W
RJCtop
129.2
75.1
C/W
RJB
39.4
38.9
C/W
JT
25.6
13.5
C/W
JB
38.9
104.5
C/W
(1)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application report,
SPRA953.
OPA835, OPA2835
www.ti.com
D
(SOIC)
DGS
(VSSOP)
(MSOP)
RUN
(WQFN)
RMC
(UQFN)
UNIT
8 PINS
10 PINS
10 PINS
10 PINS
RJA
150.1
206
145.8
143.2
C/W
RJCtop
83.8
75.3
75.1
49.0
C/W
RJB
68.4
96.2
38.9
61.9
C/W
JT
33.0
12.9
13.5
3.3
C/W
JB
67.9
94.6
104.5
61.9
C/W
(1)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application report,
SPRA953.
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TEST
LEVEL (1)
MHz
AC PERFORMANCE
Small-signal bandwidth
51
22.5
7.2
Gain-bandwidth product
30
MHz
Large-signal bandwidth
VOUT = 1 VPP, G = 1
24
MHz
VOUT = 1 VPP, G = 2
MHz
dBc
dBc
133
110
73
137
125
78
75
dBc
81
dBc
f = 100 kHz
f = 1 MHz
9.3
nV/Hz
147
Hz
0.45
pA/Hz
14.7
kHz
f = 100 kHz
0.028
Channel-to-channel crosstalk
(OPA2835)
f = 10 kHz
120
dB
(1)
Test levels (all values set by characterization and simulation): (A) 100% tested at 25C; over temperature limits by characterization and
simulation. (B) Not tested in production; limits set by characterization and simulation. (C) Typical value only for information.
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TEST
LEVEL (1)
dB
DC PERFORMANCE
Open-loop voltage gain (AOL)
100
120
TA = 25C
500
100
TA = 0C to 70C
880
880
TA = 40C to 85C
1040
1040
TA = 40C to 125C
1850
1850
TA = 0C to 70C
Input offset voltage drift (2)
8.5
1.4
1.5
13.5
2.25
13.5
TA = 25C
50
200
400
TA = 0C to 70C
47
410
TA = 40C to 85C
45
425
TA = 40C to 125C
45
530
TA = 40C to 85C
TA = 40C to 125C
TA = 0C to 70C
Input bias current drift (2)
500
A
V
8.5
1.4
0.25
1.4
TA = 40C to 85C
1.05
0.175
1.05
TA = 40C to 125C
1.1
0.185
1.1
TA = 25C
100
13
100
TA = 0C to 70C
100
13
100
TA = 40C to 85C
100
13
100
TA = 40C to 125C
100
13
100
TA = 0C to 70C
1.230
0.205
1.230
TA = 40C to 85C
0.940
0.155
0.940
TA = 40C to 125C
0.940
0.155
0.940
0.2
0.2
V/C
A
nA
nA/C
A
nA
nA/C
INPUT
Common-mode input range low
1.5
1.6
1.5
1.6
88
110
dB
200 || 1.2
k || pF
200 || 1
k || pF
TA = 25C, G = 5
TA = 40C to 125C, G = 5
0.15
0.2
0.15
0.2
TA = 25C, G = 5
2.45
2.5
TA = 40C to 125C, G = 5
2.45
2.5
45/13
mV
35
mA
mA
TA = 25C, G = 5
TA = 25C
25
TA = 40C to 125C
20
DC resistance
2376
2400
2424
DC resistance
1782
1800
1818
DC resistance
594
600
606
Resistor tolerance
DC resistance
1%
DC resistance
PPM
(2)
(3)
1%
<10
Input Offset Voltage Drift, Input Bias Current Drift, and Input Offset Current Drift are average values calculated by taking data at the end
points, computing the difference, and dividing by the temperature range.
Current is considered positive out of the pin.
OPA835, OPA2835
www.ti.com
TEST CONDITIONS
MIN
UNIT
TEST
LEVEL (1)
5.5
340
dB
TYP
MAX
245
345
POWER SUPPLY
Specified operating voltage
Quiescent operating current per
amplifier
2.5
TA = 25C
175
TA = 40C to 125C
135
88
105
1.4
PD = 0.5 V
20
500
nA
PD = 0.5 V
0.5
1.5
0.7
2.1
1.4
CONDITIONS
MIN
TYP
MAX
UNIT
TEST
LEVEL (1)
MHz
AC PERFORMANCE
Small-signal bandwidth
56
22.5
7.4
3.1
Gain-bandwidth product
31
MHz
Large-signal bandwidth
VOUT = 2 VPP, G = 1
31
MHz
VOUT = 2 VPP, G = 2
14.5
MHz
f = 10 kHz
135
f = 100 kHz
105
dBc
dBc
f = 1 MHz
70
f = 10 kHz
139
f = 100 kHz
122
f = 1 MHz
-73
Second-order intermodulation
distortion
70
dBc
83
dBc
f = 100 kHz
f = 1 MHz
0.00015%
116.4
dBc
0.00003%
130
C
C
dBc
9.3
nV/Hz
147
Hz
0.45
pA/Hz
14.7
Hz
f = 100 kHz
0.028
f = 10 kHz
120
dB
(1)
Test levels (all values set by characterization and simulation): (A) 100% tested at 25C; over temperature limits by characterization and
simulation. (B) Not tested in production; limits set by characterization and simulation. (C) Typical value only for information.
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
CONDITIONS
MIN
TYP
MAX
UNIT
TEST
LEVEL (1)
dB
DC PERFORMANCE
Open-loop voltage gain (AOL)
100
120
TA = 25C
500
100
TA = 0C to 70C
880
880
TA = 40C to 85C
1040
1040
TA = 40C to 125C
1850
1850
TA = 0C to 70C
Input offset voltage drift (2)
8.5
1.4
1.5
13.5
2.25
13.5
TA = 25C
50
200
400
TA = 0C to 70C
47
410
TA = 40C to 85C
45
425
TA = 40C to 125C
45
530
TA = 40C to 85C
TA = 40C to 125C
TA = 0C to 70C
Input bias current drift (2)
500
A
V
8.5
1.4
0.25
1.4
TA = 40C to 85C
1.05
0.175
1.05
TA = 40C to 125C
1.1
0.185
1.1
TA = 25C
100
13
100
TA = 0C to 70C
100
13
100
TA = 40C to 85C
100
13
100
TA = 40C to 125C
100
13
100
TA = 0C to 70C
1.23
0.205
1.23
TA = 40C to 85C
0.94
0.155
0.94
TA = 40C to 125C
0.94
0.155
0.94
0.2
0.2
V/C
A
nA
nA/C
A
nA
nA/C
INPUT
Common-mode input range low
3.8
3.9
3.8
3.9
91
113
dB
200 || 1.2
k || pF
200 || 1
k || pF
TA = 25C, G = 5
TA = 40C to 125C, G = 5
0.15
0.2
0.15
0.2
TA = 25C, G = 5
4.75
4.8
TA = 40C to 125C, G = 5
4.75
4.8
70/25
mV
40
mA
mA
TA = 25C, G = 5
TA = 25C
30
TA = 40C to 125C
25
DC resistance
2376
2400
2424
DC resistance
1782
1800
1818
DC resistance
594
600
606
Resistor tolerance
DC resistance
1%
DC resistance
PPM
(2)
(3)
10
1%
<10
Input Offset Voltage Drift, Input Bias Current Drift, and Input Offset Current Drift are average values calculated by taking data at the end
points, computing the difference, and dividing by the temperature range.
Current is considered positive out of the pin.
OPA835, OPA2835
www.ti.com
CONDITIONS
MIN
UNIT
TEST
LEVEL (1)
5.5
350
dB
TYP
MAX
250
365
POWER SUPPLY
Specified operating voltage
Quiescent operating current per
amplifier
2.5
TA = 25C
200
TA = 40C to 125C
150
90
110
1.4
PD = 0.5 V
20
500
nA
PD = 0.5 V
0.5
1.5
0.7
2.1
1.4
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TEST
LEVEL (1)
AC PERFORMANCE
Slew rate, rise
VOUT = 1 VSTEP, G = 2
110
V/s
VOUT = 1 VSTEP, G = 2
130
V/s
Rise time
VOUT = 1 VSTEP, G = 2
9.5
ns
Fall time
VOUT = 1 VSTEP, G = 2
ns
VOUT = 1 VSTEP, G = 2
35
ns
VOUT = 1 VSTEP, G = 2
30
ns
VOUT = 1 VSTEP, G = 2
60
ns
VOUT = 1 VSTEP, G = 2
65
ns
VOUT = 1 VSTEP, G = 2
120
ns
VOUT = 1 VSTEP, G = 2
90
ns
Overshoot/Undershoot
VOUT = 1 VSTEP, G = 2
0.5%/0.2%
140/125
ns
250
ns
50
ns
(1)
Test levels (all values set by characterization and simulation): (A) 100% tested at 25C; over temperature limits by characterization and
simulation. (B) Not tested in production; limits set by characterization and simulation. (C) Typical value only for information.
11
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TEST
LEVEL (1)
AC PERFORMANCE
Slew rate, rise
160
V/s
260
V/s
Rise time
10
ns
Fall time
ns
45
ns
45
ns
50
ns
55
ns
82
ns
85
ns
Overshoot/Undershoot
2.5%/1.5%
Overdrive = 0.5 V
195/135
ns
200
ns
60
ns
(1)
12
Test levels (all values set by characterization and simulation): (A) 100% tested at 25C; over temperature limits by characterization and
simulation. (B) Not tested in production; limits set by characterization and simulation. (C) Typical value only for information.
OPA835, OPA2835
www.ti.com
FIGURE LOCATION
Figure 1
Figure 2
Figure 3
Figure 4
Slew Rate
Figure 5
Figure 6
Harmonic Distortion
vs Frequency
Figure 7
Harmonic Distortion
vs Load Resistance
Figure 8
Harmonic Distortion
vs Output Voltage
Figure 9
Harmonic Distortion
vs Gain
Figure 10
vs Load Resistance
Figure 11
vs Load Current
Figure 12
Output Impedance
vs Frequency
Figure 13
Figure 14
vs Capacitive Load
Figure 15
vs Frequency
Figure 16
Open-Loop Gain
vs Frequency
Figure 17
vs Frequency
Figure 18
Crosstalk
vs Frequency
Figure 19
Figure 20
Figure 21
vs Free-Air Temperature
Figure 22
Figure 23
Figure 24
vs Free-Air Temperature
Figure 25
Figure 26
13
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
21
21
VS = 2.7 V,
VOUT = 100 mVpp,
G = 10
18
15
G=5
12
G=5
Gain Magnitude - dB
9
6
G=2
3
0
12
9
6
G=2
G=1
3
0
-3
G=1
-3
G = -1
-6
-6
-9
100k
1M
10M
f - Frequency - Hz
G = -1
-9
100k
100M
100M
2.5
VS = 2.7 V,
G = 1,
RF = 0 W
VS = 2.7 V,
G = -1,
RF = 2 kW
2.5
RL = 2 kW
VO - Output Voltage - V
2 R = 2 kW
L
1.5
VOUT = 1.5 Vpp
1
0.5
0
0
VOUT = 2 Vpp
2
1.5
0.5
0
500
t - Time - ns
1000
500
t - Time - ns
1000
140
VS = 2.7 V,
G = 2,
120 R = 2 kW
F
3.75
VS = 2.7 V,
G = 5,
RF = 2 kW,
RL = 2 kW
0.5
100
Falling
VI - Input Voltage - V
10M
f - Frequency - Hz
VO - Output Voltage - V
1M
80
Rising
60
VIN
3.25
VOUT
2.75
RL = 2 kW
2.25
1.75
1.25
0.25
0.75
0.25
40
VO - Output Voltage - V
Gain Magnitude - dB
RL = 2 kW
RL = 2 kW
15
VS = 2.7 V,
VOUT = 1 Vpp,
G = 10
18
0
-0.25
20
-0.75
0
0.5
0.6
0.7
0.8
Output Voltage Step - V
0.9
14
-0.25
0
500
1000
t - Time - ns
1500
-1.25
2000
OPA835, OPA2835
www.ti.com
-30
VS = 2.7 V,
G = 1,
VOUT = 1 Vpp,
-40
RF = 0 W,
RL = 2 kW
-60
-70
-80
-90
HD2
-100
HD3
-110
-60
-50
VS = 2.7 V,
G = 1,
f = 1 MHz,
RF = 0 W
VOUT = 1 Vpp
-55
-65
HD2
-70
-75
HD3
-80
-120
-85
-130
-90
100
-140
f - Frequency - Hz
1k
RLOAD - Load Resistance - W
10k
1M
100k
10M
-30
-40
VS = 2.7 V,
G = 1,
f = 1 MHz,
RF = 0 W,
-40
VS = 2.7 V,
G = 1,
f = 1 MHz,
VOUT = 1 Vpp,
-45
-50
RL = 2 kW
10k
-50
-60
HD2
-70
-80
RL = 2 kW
-55
-60
HD3
-65
-70
HD2
-75
-80
HD3
-85
-90
0
1
VO - Output Voltage - Vpp
-90
1
5
6
Gain - V/V
10
VOUT = High
VO - Output Voltage - V
VS = 2.7 V,
G = 5,
RF = 2 kW
2.5
1.5
0.1
VOUT = High
VOUT = Low
0.01
0.5
VOUT = Low
0
10
100
1k
10k
0.001
0.1
RL - Load Resistance - W
10
IL - Load Current - mA
100
15
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
1000
VS = 2.7 V,
G=1
100
CL = 10 pF
Gain Magnitude - dB
ZO - Output Impedance - W
10
RO = 0 W
CL = 100 pF
CL = 22 pF
RO = 40.2 W
RO = 76.8 W
CL = 220 pF
-3
CL = 1 pF
RO = 24.9 W
RO = 0 W
CL = 560 pF
RO = 13 W
-6
VS = 2.7 V,
G = 1,
RF = 0 W
CL = 1000 pF
0.1
RO = 10 W
RL = 2 kW
0.01
10k
1M
10M
f - Frequency - Hz
100k
100M
-9
100k
1G
10M
f - Frequency - Hz
1M
100M
100
Voltage Noise
Current Noise
VS = 2.7 V
VS = 2.7 V,
G = 1,
RF = 0 W,
RO - Output Resistor - W
RL = 2 kW
10
1
10
100
1000
10
0.1
10
100
1k
100
-90
80
-135
60
-180
40
-225
20
-270
0
Open Loop Gain Phase
Open Loop Gain Magnitude
-20
-40
1
10
100
1k
10k
100k 1M
Frequency (Hz)
10M 100M
-20
PSRR
-30
-40
CMRR
-50
-60
-360
-70
-80
10k
D001
D007
16
-10
-315
-405
1G
10M
VS = 2.7 V
-45
CMRR/PSRR - dB
120
1M
VS = 2.7 V
10k
100k
Frequency (Hz)
1G
100k
1M
f - Frequency - Hz
10M
100M
OPA835, OPA2835
www.ti.com
OPA2835 only
80
VS = 2.7 V,
G = 2,
RF = 2 kW
2.5
VPD
RL = 2 kW
90
VOUT / VPD
Crosstalk (dB)
100
110
1.5
VOUT
1
120
0.5
130
140
20
100
1k
10k
100k
Frequency (Hz)
1M
10M
50M
500
t - Time - ns
1600
800
4800 units tested
1412
1400
600
1143
1200
962
1000
Count
1000
800
582
600
395
400
400
200
0
-200
-400
-800
-40
>692
-600
<484.4
17 2 1 0 0 0 0
<553.6
<622.8
<692
<138.4
<207.6
<0
<69.2
<-138.4
<-69.2
<-276.8
<-207.6
<-415.2
<-346
<-553.6
<-484.4
<-692
<-622.8
<276.8
52
0 0 0 1 4 13 26
0
<346
<415.2
158
112
200
-20
40
60
80
100
120
1200
3.5
20
TA - Free-Air Temperature - C
0C to 70C
-40C to 85C
-40C to 125C
967
904
1000
772
2.5
800
695
Count
Count
600
1.5
402
369
400
213
174
200
36
9 3 13 16 32
<-45
<-40.5
80
0.5
81
37 24 14
31
4 4
<45
>45
<36
<40.5
<27
<31.5
<22.5
<13.5
<18
<0
<4.5
<9
<-9
<-4.5
<-13.5
-5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VOS - Drift - mV/C
<-36
<-31.5
<-27
<-22.5
<-18
17
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
7
100
80
0C to 70C
-40C to 85C
-40C to 125C
40
20
Count
60
-20
-40
-60
1
-80
-100
-40
-20
20
40
60
80
100
120
0
-250 -200-150-100-50 0
TA - Free-Air Temperature - C
18
50 100 150 200 250 300 350 400 450 500 550
IOS - Drift - pA/C
OPA835, OPA2835
www.ti.com
FIGURE LOCATION
Figure 27
Figure 28
Figure 29
Figure 30
vs Output Voltage Step
Figure 31
Figure 32
Harmonic Distortion
vs Frequency
Figure 33
Harmonic Distortion
vs Load Resistance
Figure 34
Harmonic Distortion
vs Output Voltage
Figure 35
Harmonic Distortion
vs Gain
Figure 36
vs Load Resistance
Figure 37
vs Load Current
Figure 38
Output Impedance
vs Frequency
Figure 39
Figure 40
vs Capacitive Load
Figure 41
vs Frequency
Figure 42
vs Frequency
Figure 43
vs Frequency
Figure 44
Crosstalk
vs Frequency
Figure 45
Figure 46
Figure 47
vs Free-Air Temperature
Figure 49
Figure 48
Figure 50
vs Free-Air Temperature
Figure 51
Figure 52
19
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
21
21
VS = 5 V,
VOUT = 100 mVpp,
G = 10
18
RL = 2 kW
G=5
12
9
6
G=2
G=1
9
6
G=2
3
0
-3
-3
1M
G = -1
G=1
-6
G = -1
-9
100k
G=5
12
-6
RL = 2 kW
15
Gain Magnitude - dB
10M
-9
100k
100M
1M
VS = 5 V,
4.5 G = -1,
RF = 2 kW
4 R = 2 kW
4.5
4
3.5
VOUT = 4 Vpp
VOUT = 4 Vpp
VO - Output Voltage - V
VO - Output Voltage - V
100M
VS = 5 V,
G = 1,
RF = 0 W
3
2.5
RL = 2 kW
2
1.5
1
3.5
3
2.5
2
1.5
1
0.5
0.5
VOUT = 0.5 Vpp
500
t - Time - ns
1000
250
500
t - Time - ns
1000
6.25
1.25
VS = 5 V,
G = 2,
RF = 2 kW
Falling
VS = 5 V,
G = 5,
RF = 2 kW,
VIN
5.75
VOUT
5.25
4.75
RL = 2 kW
RL = 2 kW
4.25
VI - Input Voltage - V
10M
f - Frequency - Hz
f - Frequency - Hz
200
Rising
150
100
3.75
0.75
3.25
2.75
0.5
2.25
1.75
1.25
0.25
VO - Output Voltage - V
Gain Magnitude - dB
15
VS = 5 V,
VOUT = 2 Vpp,
G = 10
18
0.75
0.25
50
0
0
2
Output Voltage Step - V
20
-0.25
0
-0.25
500
1000
t - Time - ns
1500
-0.75
-1.25
2000
OPA835, OPA2835
www.ti.com
-30
-50
-50
VS = 5 V,
G = 1,
VOUT = 2 Vpp,
-60
RL = 2 kW
VS = 5 V,
G = 1,
f = 1 MHz,
RF = 0 W
VOUT = 2 Vpp
-55
RF = 0 W,
Harmonic Distortion - dBc
-40
-70
-80
-90
HD2
-100
-110
HD3
-120
-60
-65
HD2
-70
HD3
-75
-80
-85
-130
-90
100
-140
10k
100k
1M
1k
10M
-40
VS = 5 V,
G = 1,
f = 1 MHz,
RF = 0 W,
-45
VS = 5 V,
-45 G = 1,
f = 1 MHz,
-50 V
OUT = 2 Vpp,
RL = 2 kW
-55
-50
HD3
-60
HD2
-65
-70
-75
-80
RL = 2 kW
-55
HD3
-60
-65
HD2
-70
-75
-80
-85
-85
-90
0
2
VO - Output Voltage - Vpp
-90
1
VS = 5 V,
G = 5,
RF = 2 kW
VOUT = High
5
6
Gain - V/V
10
VO - Output Voltage - V
10k
f - Frequency - Hz
VS = 5 V,
G = 5,
RF = 2 kW
VOUT = High
0.1
VOUT = Low
VOUT = Low
0
10
100
1k
10k
0.01
0.1
RL - Load Resistance - W
10
IL - Load Current - mA
100
21
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
3
VS = 5 V,
G=1
100
ZO - Output Impedance - W
www.ti.com
VS = 5 V,
G = 1,
RF = 0 W
RL = 2 kW
Gain Magnitude - dB
10
CL = 100 pF
CL = 10 pF
RO = 40.2 W
RO = 0 W
CL = 220 pF
-3
RO = 0 W
CL = 560 pF
CL = 22 pF
RO = 13 W
RO = 76.8 W
CL = 1000 pF
-6
0.1
CL = 1 pF
RO = 24.9 W
RO = 10 W
0.01
10K
100K
1M
10M
f - Frequency - Hz
100M
-9
100k
1G
10M
f - Frequency - Hz
1M
100M
100
Voltage Noise
Current Noise
VS = 5 V
VS = 5 V,
G = 1,
RF = 0 W,
RO - Output Resistor - W
RL = 2 kW
10
1
10
100
10
0.1
10
1000
100
1k
100
-90
60
-180
40
-225
20
-270
-315
Open Loop Gain Phase
Open Loop Gain Magnitude
-360
100
1k
10k 100k 1M
Frequency (Hz)
10M 100M
-405
1G
CMRR/PSRR - dB
-135
-30
CMRR
-40
-50
-60
-70
-80
10k
D002
D007
22
PSRR
-20
80
10
D001
D007
-10
-45
10M
VS = 5 V
120
-40
1M
VS = 5 V
-20
10k
100k
Frequency (Hz)
140
1G
100k
1M
f - Frequency - Hz
10M
100M
OPA835, OPA2835
www.ti.com
OPA2835 only
4.5
80
VPD
RL = 2 kW
3.5
VOUT / VPD
Crosstalk (dB)
90
100
110
VOUT
2.5
2
1.5
120
130
0.5
140
20
100
1k
10k
100k
Frequency (Hz)
1M
10M
0
0
50M
500
t - Time - ns
800
4800 units tested
1404
1400
600
1156
1200
965
Count
1000
800
590
600
377
400
400
200
0
-200
-400
170
-600
-800
-40
>692
0 0 0 0
<484.4
13 2 1
<553.6
<622.8
<692
<276.8
<138.4
<207.6
<0
<69.2
<-138.4
<-69.2
<-276.8
<-207.6
<-415.2
<-346
<-553.6
<-484.4
<-692
53
0 0 1 3 11 26
<-622.8
<346
<415.2
108
200
0
-20
20
40
80
60
100
120
TA - Free-Air Temperature - C
3.5
1000
0C to 70C
-40C to 85C
-40C to 125C
948
895
900
800
754
715
700
Count
Count
2.5
600
500
397
400
1.5
300
205
188
200
94
100
0.5
75
37 7 5 9 20 34
36 26 14 5 3 31
<45
>45
<36
<40.5
<27
<31.5
<22.5
<13.5
<18
<0
<4.5
<9
<-9
<-4.5
<-13.5
<-36
<-31.5
<-27
<-22.5
<-18
-5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VOS - Drift - mV/C
<-45
<-40.5
23
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
100
80
8
7
40
6
20
Count
60
0C to 70C
-40C to 85C
-40C to 125C
5
4
-20
3
-40
-60
-80
-100
-40
-20
20
40
60
80
100
120
0
-250 -200-150-100-50 0
TA - Free-Air Temperature - C
24
50 100 150 200 250 300 350 400 450 500 550
IOS - Drift - pA/C
OPA835, OPA2835
www.ti.com
8 Detailed Description
8.1 Overview
The OPAx835 family of bipolar-input operational amplifiers offer excellent bandwidth of 56 MHz with ultra-low
THD of 0.00003% at 1 kHz. It can swing to within 200 mV of the supply rails while driving a 2-k load. The input
common mode of the amplifier can swing to 200 mV below the negative supply rail. This level of performance is
achieved at 250 A of quiescent current per amplifier channel.
VREF
VIN
RG
OPA 835
VOUT
GVSIG
VREF
VS-
VREF
RF
VSIG
VREF
VS+
VREF
RG
OPA 835
VIN
VS-
VOUT
GVSIG
VREF
RF
25
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
26
OPA835, OPA2835
www.ti.com
Gain Magnitude - dB
VS = 5 V,
18 VOUT = 100 Vpp,
G = 2,
15 RL = 2 kW
RF = 100 kW
RF = 10 kW
12
9
RF = 2 kW
6
RF = 100 kW
CF = 1 pF
3
0
RF = 10 kW
CF = 1 pF
-3
-6
-9
0
10
100
f - Frequency - MHz
Figure 55. Frequency Response With Various Gain Setting Resistor Values
As expected, larger value gain resistors cause lower bandwidth and peaking in the response (peaking in
frequency response is synonymous with overshoot and ringing in pulse response). Adding 1 pF capacitors in
parallel with RF helps compensate the phase margin and restores flat frequency response. Figure 56 shows the
test circuit used.
VIN
RG
VOUT
OPA 835
2 kW
RF
CF
Figure 56. G = 2 Test Circuit for Various Gain Setting Resistor Values
8.3.5 Driving Capacitive Loads
The OPA835 and OPA2835 can drive up to a nominal capacitive load of 10 pF on the output with no special
consideration. When driving capacitive loads greater than this, it is recommended to use a small resister (RO) in
series with the output as close to the device as possible. Without RO, capacitance on the output will interact with
the output impedance of the amplifier causing phase shift in the loop gain of the amplifier that will reduce the
phase margin. This will cause peaking in the frequency response and overshoot and ringing in the pulse
response. Interaction with other parasitic elements may lead to instability or oscillation. Inserting RO will isolate
the phase shift from the loop gain path and restore the phase margin; however it can also limit the bandwidth
slightly.
Figure 57 shows the test circuit and Figure 41 shows the recommended values of RO versus capacitive loads,
CL. See Figure 40 for frequency response with various values.
RO
VIN
VOUT
OPA835
CL
2 kW
27
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
VSIG
RG
VOUT
OPA 835
Load
-2.5 V
RF
VSIG
RG
VOUT
OPA 835
Load
RF
2.5 V
28
OPA835, OPA2835
www.ti.com
RG
2.5 V
REF
VOUT
GVSIG
2.5 V
C
RF
5V
RO
OPA 835
RG
VOUT
GVSIG
2.5 V
RG
RF
29
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
R1
2.5 V
REF
RO
VOUT
OPA 835
GVSIG
2.5 V
RG
RF
VSIG
2.5 V
Signal and bias
from previous stage
R1
RO
R2
OPA 835
VOUT
GVSIG
2.5 V
RG
VSIG
RF
2.5 V
Signal and bias
from previous stage
30
OPA835, OPA2835
www.ti.com
RF
V
= VSIG 1 +
+ VREF
OUT
RG
(1)
RF
RG , and V
The signal gain of the circuit is set by:
REF provides a reference around which the input and
output signals swing. Output signals are in-phase with the input signals.
G= 1 +
The OPA835 and OPA2835 devices are designed for the nominal value of RF to be 2 k in gains other than +1.
This gives excellent distortion performance, maximum bandwidth, best flatness, and best pulse response. RF = 2
k must be used as a default unless other design goals require changing to other values All test circuits used to
collect data for this data sheet had RF = 2 k for all gains other than +1. A gain of +1 is a special case where RF
is shorted and RG is left open.
9.1.2 Inverting Amplifier
The OPA835 and OPA2835 devices can be used as inverting amplifiers with signal input to the inverting input,
VIN, through the gain setting resistor RG. A basic block diagram of the circuit is shown in Figure 54.
If VIN = VREF + VSIG, then the output of the amplifier may be calculated according to Equation 2.
-R
VOUT = VSIG F
RG
+ VREF
(2)
G=
-RF
RG , and V
The signal gain of the circuit is set by:
REF provides a reference point around which the input
and output signals swing. Output signals are 180 out-of-phase with the input signals. The nominal value of RF
must be 2 k for inverting gains.
(VIN+ - VIN- )
2RF1 RF2
1 +
+ VREF
RG1 RG2
(3)
31
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
2R F1 R F2
G = 1 +
R G 1 R G2
VSIG-
RF2
VCM
RG2
RF1
RG1
RG2
VOUT
OPA 835
RF1
G[(VSIG+)-(VSIG-)]
VSIG+
RF2
VCM
OPA2835
VREF
VREF
VIN+
(4)
The differential signal gain of the circuit is 2 G, and VREF provides a reference around which the output signal
swings. The differential output signal is in-phase with the single-ended input signal.
RO
G x V SIG
VOUT+ VREF
R1
VSIG
VREF
VIN
OPA2835
2R
2R
+
VREF
VREF
-G x V SIG
RO
VOUT+
RG
RF
VREF
OPA2835
OPA835, OPA2835
www.ti.com
G x V SIG
VOUT +
VSIG
VREF
OPA2835
V IN
Rf
2 k
V REF
Rf
2 k
R0
49.9
V REF
-G x V SIG
VOUT -
V REF
+
OPA2835
RF
RG , V is rejected, and V
The signal gain of the circuit is set by:
CM
REF provides a level shift around which
the output signal swings. The single-ended output signal is in-phase with the differential input signal.
VSIG-
RF
VCM
VINVIN+
VSIG+
VCM
RG
VOUT
OPA835
RG
G[(VSIG+)-(VSIG-)]
RF
VREF
VREF
33
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
2RF
V
= VIN 1 +
+ VCM
OUT
RG
G= 1 +
(6)
2RF
VSIG-
VOUTGVSIGVCM
VCM
RF
RG
RF
VSIG+
GVSIG+
VCM
VCM
OPA2835
VOUT+
VIN+
34
OPA835, OPA2835
www.ti.com
FB2
FB3
FB4
2.4 k
1.8 k
600
800 1.25 pF
INVERTING GAIN
(Figure 54)
SHORT PINS
SHORT PINS
SHORT PINS
SHORT PINS
1 V/V (0 dB)
1 to 9
1 V/V (0 dB)
1 to 9
2 to 8
6 to GND
1 to 9
2 to 8
7 to GND
1 to 8
2 to 7
6 to GND
1 to 9
2 to 7 or 8
7 to 8
6 to GND
1 to 9
2 to 6 or 8
6 to 8
7 to GND
1 to 9
2 to 7
6 to GND
SHORT PINS
SHORT PINS
SHORT PINS
SHORT PINS
1 to 7
2 to 8
9 to GND
1 to 6
2 to 7
8 to GND
1 to 6
2 to 7 or 8
7 to 8
9 to GND
1 to 7
2 to 6 or 8
6 to 8
9 to GND
1 to 6
2 to 7
9 to GND
5V
R1
RO
VOUT
OPA 835
GVSIG
RG
0V
RF
35
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
If the input signal pulses negative from ground, an inverting amplifier is more appropriate as shown in Figure 71.
A key consideration in both noninverting and inverting cases is that the input and output voltages are kept within
the limits of the amplifier, and because the VICR of the OPA835 device includes the negative supply rail, the op
amp lends itself well to this application.
5V
R1
OPA 835
RO
VOUT
GVSIG
RG
Signal and bias
from previous stage
0V
VSIG
0V
RF
VSIG
2.7V
4.02 k
2k
1.35 V
5V
VS+
VIN
2.5 V
100
OPA835
4.02 k
VS-
2.2 nF
2k
2k
36
OPA835, OPA2835
www.ti.com
-20
AIN - dBc
-40
-60
-80
-100
-120
-140
20
40
60
80
f - Frequency - Hz
100
120
SIGNAL (dBFS)
SNR (dBc)
THD (dBc)
SINAD (dBc)
SFDR (dBc)
10k
0.85
81.9
87.5
80.8
89.9
37
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
VIN
From AP
VOUT
To AP
100 pF OPA 835
10 W
-2.5 V
The 100-pF capacitor to ground on the input helped to decouple noise pick up in the lab and improved noise
performance.
INPUT
EXCITATION
PERFORMANCE
TARGET
RLoad
38
OPA835, OPA2835
www.ti.com
VS = 5 V,
VOUT = 1 VRMS,
-95 G = 1,
RF = 0 W,
BW = 80 kHz
-100
-20
-30
No weighting
RL = 300 W,
-40
RL = 100 kW
-105
A-weighting
RL = 300 W,
-110
VS = 5 V,
VOUT = 1 VRMS,
G = 1,
RF = 0 W
-10
FFT - dBV
-90
-50
-60
-70
-80
-90
RL = 100 kW
-100
Gen Mon - 100k
-110
-115
-120
RL = 100k
-130
-120
10
-140
100
1k
f - Frequency - Hz
10k
100k
2k
4k
6k
8k
10k
12k
f - Frequency - Hz
14
16k
18k
20k
VS = 5 V,
VOUT = 1 VRMS,
G = 1,
RF = 0 W
-10
-20
-30
-40
FFT - dBV
-50
-60
-70
-80
-90
Gen Mon - 300
-100
-110
RL = 300
-120
-130
-140
0
2k
4k
6k
8k
10k
12k
f - Frequency - Hz
14
16k
18k
20k
39
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
4.22 kW
OPA 835
1.5 nF
562 W
6.19 kW
330 pF
OPA835
Gain Magnitude - dB
MFB
-10
-20
Sallen-Key
-30
-40
1k
10k
100k
1M
f - Frequency - Hz
Figure 80. MFB and Sallen-Key Second-Order Low-Pass Butterworth Filter Response
40
OPA835, OPA2835
www.ti.com
11 Layout
11.1 Layout Guidelines
The OPA835 EVM (SLOU314) must be used as a reference when designing the circuit board. It is recommended
to follow the EVM layout of the external components near to the amplifier, ground plane construction, and power
routing as closely as possible. General guidelines are:
1. Signal routing must be direct and as short as possible into an out of the op amp.
2. The feedback path must be short and direct avoiding vias if possible especially with G = +1.
3. Ground or power planes must be removed from directly under the negative input and output pins of the
amplifier.
4. A series output resistor is recommended to be placed as near to the output pin as possible. See
Recommended Series Output Resistor vs Capacitive Load (Figure 41) for recommended values given
expected capacitive load of design.
5. A 2.2-F power supply decoupling capacitor must be placed within 2 inches of the device and can be shared
with other op amps. For spit supply, a capacitor is required for both supplies.
6. A 0.1-F power supply decoupling capacitor must be placed as near to the power supply pins as possible.
Preferably within 0.1 inch. For split supply, a capacitor is required for both supplies.
7. The PD pin uses TTL logic levels. If not used, it must tied to the positive supply to enable the amplifier. If
used, it must be actively driven. A bypass capacitor is not necessary, but can be used for robustness in noisy
environments.
41
OPA835, OPA2835
SLOS713F JANUARY 2011 REVISED JUNE 2015
www.ti.com
42
OPA835, OPA2835
www.ti.com
PRODUCT FOLDER
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
OPA835
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OPA2835
Click here
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12.3 Trademarks
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
43
www.ti.com
2-Apr-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Eco Plan
Lead/Ball Finish
(2)
(6)
(3)
Op Temp (C)
Device Marking
(4/5)
OPA2835ID
ACTIVE
SOIC
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2835
OPA2835IDGS
ACTIVE
VSSOP
DGS
10
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
2835
OPA2835IDGSR
ACTIVE
VSSOP
DGS
10
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
2835
OPA2835IDR
ACTIVE
SOIC
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2835
OPA2835IRMCR
ACTIVE
UQFN
RMC
10
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2835
OPA2835IRMCT
ACTIVE
UQFN
RMC
10
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2835
OPA2835IRUNR
ACTIVE
QFN
RUN
10
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2835
OPA2835IRUNT
ACTIVE
QFN
RUN
10
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2835
OPA835IDBVR
ACTIVE
SOT-23
DBV
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
QUM
OPA835IDBVT
ACTIVE
SOT-23
DBV
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
QUM
OPA835IRUNR
ACTIVE
QFN
RUN
10
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
835
OPA835IRUNT
ACTIVE
QFN
RUN
10
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
835
(1)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Addendum-Page 1
Samples
www.ti.com
2-Apr-2015
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
12-Nov-2014
Device
OPA2835IDGSR
DGS
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
10
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
OPA2835IDR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
OPA2835IRMCR
UQFN
RMC
10
3000
180.0
9.5
2.3
2.3
1.1
2.0
8.0
Q2
OPA2835IRMCT
UQFN
RMC
10
250
180.0
9.5
2.3
2.3
1.1
2.0
8.0
Q2
OPA2835IRUNR
QFN
RUN
10
3000
180.0
8.4
2.3
2.3
1.15
4.0
8.0
Q2
OPA2835IRUNT
QFN
RUN
10
250
180.0
8.4
2.3
2.3
1.15
4.0
8.0
Q2
OPA835IDBVR
SOT-23
DBV
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
OPA835IDBVT
SOT-23
DBV
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
OPA835IRUNR
QFN
RUN
10
3000
180.0
8.4
2.3
2.3
1.15
4.0
8.0
Q2
OPA835IRUNT
QFN
RUN
10
250
180.0
8.4
2.3
2.3
1.15
4.0
8.0
Q2
Pack Materials-Page 1
12-Nov-2014
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA2835IDGSR
VSSOP
DGS
10
2500
366.0
364.0
50.0
OPA2835IDR
SOIC
2500
340.5
338.1
20.6
OPA2835IRMCR
UQFN
RMC
10
3000
205.0
200.0
30.0
OPA2835IRMCT
UQFN
RMC
10
250
205.0
200.0
30.0
OPA2835IRUNR
QFN
RUN
10
3000
210.0
185.0
35.0
OPA2835IRUNT
QFN
RUN
10
250
210.0
185.0
35.0
OPA835IDBVR
SOT-23
DBV
3000
180.0
180.0
18.0
OPA835IDBVT
SOT-23
DBV
250
180.0
180.0
18.0
OPA835IRUNR
QFN
RUN
10
3000
210.0
185.0
35.0
OPA835IRUNT
QFN
RUN
10
250
210.0
185.0
35.0
Pack Materials-Page 2
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