Sie sind auf Seite 1von 4

[ /Title

(RFM6

N45,

RFP6N4

5,

RFP6N5

0)

/Subject

(6A,

450V

and

500V,

1.250

Ohm, N-

Channel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

204AA,

TO-

220AB)

/Creator

()

/DOCIN

Semiconductor September 1998
Semiconductor
September 1998

RFM6N45, RFP6N45,

RFP6N50

6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs

Features

• 6A, 450V and 500V

• r DS(ON) = 1.250

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedence

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFM6N45

TO-204AA

RFM6N45

RFP6N45

TO-204AA

RFP6N45

RFP6N50

TO-220AB

RFP6N50

NOTE: When ordering, include the entire part number.

Description

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for appli- cations such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipo- lar switching transistors requiring high speed and low gate drive power. These types can be operated directly from inte- grated circuits.

Formerly developmental type TA17425.

Symbol

G

D

circuits. Formerly developmental type TA17425. Symbol G D S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN

S

Packaging

JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2)
JEDEC TO-204AA
DRAIN
(FLANGE)
SOURCE (PIN 2)

GATE (PIN 1)

DRAIN

(FLANGE)

JEDEC TO-220AB

SOURCE DRAIN GATE
SOURCE
DRAIN
GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1998

5--1

File Number

1494.2

RFM6N45, RFP6N45, RFP6N50

Absolute Maximum Ratings

T C = 25 o C, Unless Otherwise Specified

Drain to Source Voltage (Note 1)

Drain to Gate Voltage (RGS = 20kW) (Note

V DS

V DGR

Continuous

Drain

Current.

.

.

.

.

.

.

Pulsed Drain Current (Note 3)

.

.

.

Gate to Source Voltage

.

.

.

.

.

.

.

.

Maximum Power Dissipation

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

I D

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

I DM

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

V GS

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.P D

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.

.T J , T STG

T L

T pkg

. Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 (for TO-220)

Linear Derating Factor

RFM6N45

RFP6N45

RFP6N50

UNITS

450

450

500

V

450

450

500

V

666A

15

15

15

A

o

±20

±20

±20

V

100

75

75

W

0.8

0.6

0.6

W/ o C

-55 to 150

-55 to 150

-55 to 150

C

300

300

300

260

260

260

o

o

C

C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. T J = 25 o C to 125 o C.

Electrical Specifications

T C = 25 o C, Unless Otherwise Specified

 

PARAMETER

SYMBOL

 

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

 

BV DSS

I

D = 250 A, V GS = 0V

       
 

RFM6N45, RFP6N45

   

450

-

-

 

V

RFP6N50

500

-

-

 

V

Gate Threshold Voltage

 

V

GS(TH)

V GS = V DS , I D = 250 A (Figure 8)

2

-

4

 

V

Zero-Gate Voltage Drain Current

 

I DSS

V DS = Rated BV DSS , V GS = 0V

-

-

1

 

A

 

V DS = 0.8 x Rated BV DSS , V GS = 0V, T C = 125 o C

-

-

25

 

A

Gate to Source Leakage Current

 

I GSS

V GS = ±20V, V DS = 0V

-

-

±100

 

nA

Drain to Source On Resistance(Note 2 )

 

r

DS(ON)

I D = 6A, V GS = 10V, (Figures 6, 7)

-

-

1.250

 

Drain to Source On-Voltage (Note 2)

V

DS(ON)

I D = 6A, V GS = 10V

-

-

7.50

 

V

Turn-On Delay Time

 

t

d(ON)

I D = 3A, V DD = 250V, R G = 50 ,

-

15

45

 

ns

Rise Time

 

t

 

V GS = 10V, R L = 81

-

40

80

 

ns

r

(Figures 10, 11, 12)

Turn-Off Delay Time

 

t

d(OFF)

-

190

300

 

ns

Fall Time

 

t

f

-

60

100

 

ns

Input Capacitance

 

C

ISS

V GS = 0V, V DS = 25V

-

-

1500

 

pF

Output Capacitance

 

C OSS

f

= 1MHz, (Figure 9)

-

-

250

 

pF

Reverse Transfer Capacitance

 

C RSS

 

-

-

200

 

pF

Thermal Resistance Junction to Case

 

R JC

RFM6N45

-

-

1.25

o

C/W

 

RFP6N45, RFP6N50

   

1.67

o

C/W

Source to Drain Diode Specifications

 
 

PARAMETER

SYMBOL

 

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

 

V

SD

 

I SD = 3A

-

-

1.4

 

V

Diode Reverse Recovery Time

 

t

rr

 

I SD = 4A, dI SD /dt = 100A/ s

-

800

-

 

ns

NOTES:

2. Pulsed test: Pulse width 300 s duty cycle 2%

3. Repetitive rating: pulse width limited by maximum junction temperature.

5-2

RFM6N45, RFP6N45, RFP6N50

Typical Performance Curves

1.2 1.0 0.8 0.6 0.4 0.2 0 0 50 100 150 POWER DISSIPATION MULTIPLIER
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
POWER DISSIPATION MULTIPLIER

T C , CASE TEMPERATURE ( o C)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

7 6 5 4 3 2 1 0 25 50 75 100 125 150 I
7
6
5
4
3
2
1
0
25
50
75
100
125
150
I D , DRAIN CURRENT (A)

T C , CASE TEMPERATURE ( o C)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

10 T C = 25 o C DC OPERATION 75W 100W OPERATION IN THIS AREA
10
T C = 25 o C
DC
OPERATION
75W
100W
OPERATION
IN THIS AREA
1
MAY BE LIMITED BY r DS(ON)
V DSS (Max)
450V
RFM6N45,
RFP6N45
(MAX) 500V
RFP6N50
V DSS
0.1
1
10
100
1000
I D , DRAIN CURRENT (A)
12 V GS = 7 V to 10V PULSE DURATION = 80 s V GS
12
V GS = 7 V to 10V
PULSE DURATION =
80 s
V GS = 6V
DUTY CYCLE 2%
10
T C = 25 o C
V GS = 5V
8
6
4
2
V GS = 4V
0
I D, DRAIN CURRENT (A)

0

2.4

2.0

1.6

1.2

0.8

0.4

0

2

4

6

8

10

12

14

V DS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. SATURATION CHARACTERISTICS 10V V GS = PULSE DURATION = 80 s DUTY CYCLE
FIGURE 4. SATURATION CHARACTERISTICS
10V
V GS =
PULSE DURATION = 80 s
DUTY
CYCLE
2%
125 o C
25 o C
-40 o C
0
2
4
6
8
10
12
14

V DS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

14 V DS = 20V 80 s PULSE TEST DUTY CYCLE 2% 10 6 25
14
V DS = 20V
80 s PULSE TEST
DUTY CYCLE 2%
10
6
25
o C
125
o C
2
-40 o C
0
02
4
6
I D(ON) , DRAIN TO SOURCE CURRENT (A)
r DS(ON) , DRAIN TO SOURCE
ON RESISTANCE ( )

V GS , GATE TO SOURCE VOLTAGE (V)

I D, DRAIN CURRENT (A)

FIGURE 5. TRANSFER CHARACTERISTICS

FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT

5-3

RFM6N45, RFP6N45, RFP6N50

Typical Performance Curves (Continued)

3.5 6A I D = = 10V V GS 2.5 1.5 0.5 -50 0 50
3.5
6A
I D =
= 10V
V GS
2.5
1.5
0.5
-50
0
50
100
150
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE

T J , JUNCTION TEMPERATURE ( o C)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

1.5 V GS = V DS I D = 250 A 1.0 0.5 0 -50
1.5
V GS = V DS
I D = 250 A
1.0
0.5
0
-50
0
50
100
150
NORMALIZED GATE
THRESHOLD VOLTAGE

T C , JUNCTION TEMPERATURE ( o C)

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE

500 10 V GS = 0V, f = 1MHz 1400 C ISS = C GS
500
10
V GS = 0V, f = 1MHz
1400
C ISS = C GS + C GD
C RSS =
C OSS
C GD
GATE
8
C
C DS +
GS
375
V DD = BV DSS
SOURCE
VOLTAGE
V DD = BV DSS
1000
C
ISS
R L = 83
6
250
I G(REF) = 1.1mA
V GS = 10V
4
600
0.75
BV
DSS
125
0.50
BV
DSS
0.25
BV
DSS
2
C
OSS
200
C
DRAIN SOURCE VOLTAGE
RSS
0
0
0
0
10
20
30
40
50
I
I
G(REF)
G(REF)
20
t, TIME ( s)
80
V DS, DRAIN TO SOURCE VOLTAGE (V)
I
I
G(ACT)
G(ACT)
C, CAPACITANCE (pF)
V DS, DRAIN TO SOURCE VOLTAGE (V)
V GS, GATE TO SOURCE VOLTAGE (V)

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

NOTE: Refer to Harris Applications Notes AN7254 and AN7260

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

Test Circuits and Waveforms R L + R G - DUT V GS
Test Circuits and Waveforms
R L
+
R G
-
DUT
V GS

V DD

FIGURE 11. SWITCHING TIME TEST CIRCUIT

t ON t OFF t d(ON) t d(OFF) t r t f V DS 90%
t ON
t OFF
t d(ON)
t d(OFF)
t r
t f
V DS
90%
90%
10%
10%
0
90%
V GS
50%
50%
PULSE WIDTH
10%
0
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

5-4