TSUS540.

VISHAY

Vishay Semiconductors

Infrared Emitting Diode, 950 nm, GaAs

Description
TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear,
blue-grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and phototransistors.

Features

94 8389

Low cost emitter

Low forward voltage
High radiant power and radiant intensity

Suitable for DC and high pulse current operation

Standard T-1 ( 5 mm) package
Comfortable angle of half intensity = 22
Peak wavelength p = 950 nm
High reliability
Good spectral matching to Si photodetectors
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Applications
Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN
photodiodes or phototransistors.

Absolute Maximum Ratings

Tamb = 25 C, unless otherwise specified
Symbol

Value

Reverse Voltage

Parameter

Test condition

VR

Unit
V

Forward current

IF

150

mA
mA

Peak Forward Current

tp/T = 0.5, tp = 100 s

IFM

300

Surge Forward Current

tp = 100 s

IFSM

2.5

PV

210

mW

Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient

Document Number 81056

Rev. 1.4, 08-Apr-04

t 5 sec, 2 mm from case

Tj

100

Tamb

- 55 to + 100

Tstg

- 55 to + 100

Tsd

260

RthJA

375

K/W

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TSUS540.

VISHAY

Vishay Semiconductors
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter

Test condition

Forward Voltage

IF = 100 mA, tp = 20 ms

Temp. Coefficient of VF

IF = 100 mA

Symbol

Typ.

Max

VF

1.3

1.7

TKVF

- 1.3

Reverse Current

VR = 5 V

IR

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

Min

Unit
V
mV/K
A

100
30

pF

Optical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter
Temp. Coefficient of e

Test condition

Symbol

Min

Typ.

Max

Unit

IF = 20 mA

TKe

- 0.8

%/K

22

deg

Peak Wavelength

IF = 100 mA

950

nm

Spectral Bandwidth

IF = 100 mA

50

nm

Temp. Coefficient of p

IF = 100 mA

TKp

0.2

nm/K

Rise Time

IF = 100 mA

tr

800

ns

IF = 1.5 A

tr

400

ns

IF = 100 mA

tf

800

ns

IF = 1.5 A

tf

400

ns

2.9

mm

Angle of Half Intensity

Fall Time
Virtual Source Diameter

Type Dedicated Characteristics

Tamb = 25 C, unless otherwise specified
Parameter
Forward Voltage

Radiant Intensity

Test condition
IF = 1.5 A, tp = 100 s

IF = 100 mA, tp = 20 ms

IF = 1.5 A, tp = 100 s

Radiant Power

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IF = 100 mA, tp = 20 ms

Part

Symbol

Typ.

Max

Unit

TSUS5400

VF

Min

2.2

3.4

TSUS5401

VF

2.2

3.4

TSUS5402

VF

2.2

2.7

TSUS5400

Ie

14

35

mW/sr

TSUS5401

Ie

10

17

35

mW/sr

TSUS5402

Ie

15

20

35

mW/sr

TSUS5400

Ie

60

140

mW/sr

TSUS5401

Ie

85

160

mW/sr

TSUS5402

Ie

120

190

mW/sr

TSUS5400

13

mW

TSUS5401

14

mW

TSUS5402

15

mW

Document Number 81056

Rev. 1.4, 08-Apr-04

TSUS540.

VISHAY

Vishay Semiconductors
Typical Characteristics (Tamb = 25 C unless otherwise specified)
10 4
I F - Forward Current ( mA )

PV - Power Dissipation ( mW )

250
200

150
R thJA
100

50

20

40

60

80

100

Tamb - Ambient Temperature ( C )

94 7957

10 2
10 1
10 0
10 -1

0
0

10 3

Figure 1. Power Dissipation vs. Ambient Temperature

V Frel - Relative Forward Voltage

IF Forward Current ( mA)

150
100
RthJA
50

1.1
I F = 10 mA
1.0
0.9

0.8
0.7

0
0

20

40

60

80

100

Tamb Ambient Temperature ( C )

94 7988

20

40

60

80

100

T amb - Ambient Temperature ( C )

94 7990

Figure 2. Forward Current vs. Ambient Temperature

Figure 5. Relative Forward Voltage vs. Ambient Temperature

101

1000
I e Radiant Intensity ( mW/sr )

I F Forward Current (A)

1.2

200

I FSM = 2.5 A ( Single Pulse )

tp/T=0.01
0.05
0.1
0.5
1.0
101
102

94 7989

Figure 4. Forward Current vs. Forward Voltage

250

100

V F - Forward Voltage ( V )

94 7996

TSUS 5401
TSUS 5402

100

TSUS5400

10

1
101
100
101
tp Pulse Duration ( ms )

102

Figure 3. Pulse Forward Current vs. Pulse Duration

Document Number 81056

Rev. 1.4, 08-Apr-04

100
94 7997

101
102
103
I F Forward Current ( mA )

104

Figure 6. Radiant Intensity vs. Forward Current

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TSUS540.

VISHAY

Vishay Semiconductors
0
I e rel Relative Radiant Intensity

Radiant Power ( mW)

e

1000
TSUS 5402
100
TSUS5400
10

10

20

30

40
1.0
0.9

50

0.8

60
70

0.7

80
0.1
100

101
102
103
I F Forward Current ( mA )

94 7998

0.6

104

0.4

0.2

0.2

0.4

0.6

94 7999

Figure 7. Radiant Power vs. Forward Current

Figure 10. Relative Radiant Intensity vs. Angular Displacement

1.6

I e rel ; e rel

1.2
I F = 20 mA
0.8

0.4

0
-10 0 10

50

100

140

T amb - Ambient Temperature ( C )

94 7993

Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature

e rel - Relative Radiant Power

1.25
1.0

0.75
0.5

0.25
I F = 100 mA
0
900

950

1000

- Wavelength ( nm )

94 7994

Figure 9. Relative Radiant Power vs. Wavelength

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Document Number 81056

Rev. 1.4, 08-Apr-04

TSUS540.

VISHAY

Vishay Semiconductors
Package Dimensions in mm

96 12119

Document Number 81056

Rev. 1.4, 08-Apr-04

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TSUS540.

VISHAY

Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 81056

Rev. 1.4, 08-Apr-04

Legal Disclaimer Notice

Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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Document Number: 91000

Revision: 08-Apr-05

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