Data Sheet: BYM36 Series

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYM36 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 30
1996 Sep 18
Philips Semiconductors
Fast soft-recovery
BYM36 series
FEATURES
DESCRIPTION
Glass passivated
Rugged glass SOD64 package, using

a high temperature alloyed
construction.
High maximum operating

temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
,
2/3 page k(Datasheet)
This package is hermetically sealed

and fatigue free as coefficients of
expansion of all used parts are
matched.
MAM104
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
PARAMETER
CONDITIONS
IF(AV)
UNIT
200
BYM36B
400
BYM36C
600
BYM36D
800
BYM36E
1000
BYM36F
1200
BYM36G
1400
BYM36A
200
BYM36B
400
continuous reverse voltage
BYM36C
600
BYM36D
800
BYM36E
1000
BYM36F
1200
BYM36G
1400
3.0
average forward current

BYM36A to C
BYM36D and E
Ttp = 55 C; lead length = 10 mm;

see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYM36F and G
IF(AV)
MAX.
repetitive peak reverse voltage

BYM36A
VR
MIN.
average forward current

BYM36A to C
BYM36D and E
Tamb = 65 C; PCB mounting (see

Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYM36F and G
1996 Sep 18
2.9
2.9
1.25
1.20
1.15
Fast soft-recovery
SYMBOL
IFRM
IFRM
BYM36 series
PARAMETER
repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
Ttp = 55 C; see Figs 8; 9 and 10
BYM36A to C
37
BYM36D and E
33
BYM36F and G
27
BYM36A to C
13
BYM36D and E
11
BYM36F and G
10
repetitive peak forward current
Tamb = 65 C; see Figs 11; 12 and 13
IFSM
non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max

prior to surge; VR = VRRMmax
65
ERSM
non-repetitive peak reverse

avalanche energy
10
mJ
Tstg
storage temperature
65
+175
Tj
junction temperature
65
+175
MIN.
TYP.
MAX.
L = 120 mH; Tj = Tj max prior to surge;

inductive load switched off
see Figs 17 and 18
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
IF = 3 A; Tj = Tj max;
see Figs 19; 20 and 21
1.22
1.28
BYM36F and G
1.24
1.60
1.78
1.57
300
forward voltage
BYM36A to C
IF = 3 A;
see Figs 19; 20 and 21
BYM36D and E
BYM36F and G
V(BR)R
reverse avalanche breakdown

voltage
IR = 0.1 mA
BYM36A
IR
BYM36B
500
BYM36C
700
BYM36D
900
BYM36E
1100
BYM36F
1300
BYM36G
1500
VR = VRRMmax; see Fig.22
VR = VRRMmax;
Tj = 165 C; see Fig.22
150
reverse current
1996 Sep 18
UNIT
BYM36D and E
BYM36A to C
VF
CONDITIONS
Fast soft-recovery
SYMBOL
trr
BYM36 series
PARAMETER
MIN.
TYP.
MAX.
100
ns
150
ns
250
ns
85
pF
BYM36D and E
75
pF
BYM36F and G
65
pF
A/s
A/s
A/s
reverse recovery time

BYM36A to C
BYM36D and E
CONDITIONS
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig. 26
BYM36F and G
Cd
diode capacitance
f = 1 MHz; VR = 0 V;
see Figs 23 and 24
BYM36A to C
dI R
-------dt
maximum slope of reverse recovery when switched from

IF = 1 A to VR 30 V and
current
dIF/dt = 1 A/s;
BYM36A to C
see Fig.27
BYM36D and E
BYM36F and G
UNIT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.25.
For more information please refer to the General Part of associated Handbook.
1996 Sep 18
Fast soft-recovery
BYM36 series
GRAPHICAL DATA
MSA884
MSA885
handbook, halfpage
handbook, halfpage
I F(AV)
I F(AV)
(A)
20 15
(A)
10 lead length (mm)
20
15
10 lead length (mm)
0
0
100
T tp ( oC)
200
T tp ( oC)
200
BYM36D and E
a = 1.42; VR = VRRMmax; = 0.5.
Switched mode application.
BYM36A to C
a = 1.42; VR = VRRMmax; = 0.5.
Fig.2
100
Maximum average forward current as a

function of tie-point temperature (including
losses due to reverse leakage).
Fig.3
MBD418
4.0
I F(AV)
(A)
3.2

MLB492
2.0
I F(AV)
(A)
1.6
handbook, halfpage
lead length 10 mm
2.4
1.2
1.6
0.8
0.8
0.4
0
0
100
Ttp ( C)
200

1996 Sep 18
T amb ( C)
200
BYM36A to C
a = 1.42; VR = VRRMmax; = 0.5.
Device mounted as shown in Fig.25.
BYM36F and G
a = 1.42; VR = VRRMmax; = 0.5.
Fig.4
100
Fig.5

function of ambient temperature (including
Fast soft-recovery
BYM36 series
MLB493
2.0
MBD417
2.0
I F(AV)
(A)
1.6
I F(AV)
(A)
1.6
1.2
1.2
0.8
0.8
0.4
0.4
0
0
100
200
T amb ( C)
BYM36D and E
a = 1.42; VR = VRRMmax; = 0.5.
Fig.6
100
T amb ( C)
200
BYM36F and G
a = 1.42; VR = VRRMmax; = 0.5.

Fig.7

MSA890
40
I FRM
(A)
= 0.05
30
0.1
20
0.2
10
0.5
1
0
10 2
10 1
10
10 2
10 3
t p (ms)
10 4
BYM36A to C
Ttp = 55C; Rth j-tp = 25 K/W.
VRRMmax during 1 ; curves include derating for Tj max at VRRM = 600 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
Fast soft-recovery
BYM36 series
MSA889
40
I FRM
(A)
= 0.05
30
20
0.1
0.2
10
0.5
1
0
10 2
10 1
10
10 2
10 3
t p (ms)
10 4
BYM36D and E
MBD450
30
I FRM
(A)
25
= 0.05
20
0.1
15
0.2
10
0.5
5
1
0
10 2
10 1
10
10 2
10 3
t p (ms)
10 4
BYM36F and G
1996 Sep 18
Fast soft-recovery
BYM36 series
MSA887
16
I FRM
(A)
12
= 0.05
0.1
0.2
4
0.5
1
0
10 2
10 1
10
10 2
10 3
t p (ms)
10 4
BYM36A to C
Tamb = 65 C; Rth j-a = 75 K/W.
MSA888
12
I FRM
(A)
10
= 0.05
8
0.1
6
0.2
4
0.5
2
1
0
10 2
10 1
10
10 2
10 3
t p (ms)
10 4
BYM36D and E
1996 Sep 18
Fast soft-recovery
BYM36 series
MBD445
12
I FRM
(A)
10
= 0.05
8
0.1
6
0.2
4
0.5
2
1
0
10 2
10 1
10 2
10
10 3
10 4
t p (ms)
BYM36F and G
MSA882
5
2.5
P
(W)
a=3
MSA883
handbook, halfpage
2.5
P
(W)
1.57
2
1.57
a=3
1.42
4
1.42
0
0
I F(AV) (A)
BYM36A to C
BYM36D and E
a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
Fig.14 Maximum steady state power dissipation

(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
1996 Sep 18
I F(AV) (A)

Fast soft-recovery
BYM36 series
MLB560
handbook, halfpage
2.5
P
(W)
2 1.57
a=3
MSA873
200
handbook, halfpage
Tj
(C)
1.42
100
2
0
0
I F(AV) (A)
BYM36F and G
800
VR (V)
1200
BYM36A to E
Solid line = VR.
Dotted line = VRRM; = 0.5.

Fig.17 Maximum permissible junction temperature

as a function of reverse voltage.
MSA880
MLB601
200
400
12
handbook, halfpage
handbook, halfpage
IF
(A)
Tj
( o C)
100
4
F
0
0
1000
VR (V)
2000
BYM36F and G
BYM36A to C
Solid line = VR.

Dotted line = VRRM; = 0.5.
Dotted line: Tj = 175 C.

Solid line: Tj = 25 C.
Fig.18 Maximum permissible junction temperature

as a function of reverse voltage.
1996 Sep 18
VF (V)
Fig.19 Forward current as a function of forward

voltage; maximum values.
10
Fast soft-recovery
BYM36 series
MBD425
MSA881
12
12
handbook, halfpage
handbook, halfpage
IF
(A)
IF
(A)
8
0
0
VF (V)
VF (V)
BYM36F and G.
BYM36D and E.


MGC550
103
handbook, halfpage
MSA886
10 2
IR
(A)
Cd
(pF)
102
BYM36A,B,C
10
BYM36D,E
10
1
0
100
Tj (C)
200
102
V R (V)
103
BYM36A to E
f = 1 MHz; Tj = 25 C.
VR = VRRMmax.
Fig.22 Reverse current as a function of junction

temperature; maximum values.
1996 Sep 18
10
Fig.23 Diode capacitance as a function of reverse

voltage, typical values.
11
Fast soft-recovery
BYM36 series
MBD438
10 2
50
handbook, halfpage
25
Cd
(pF)
7
50
10
2
3
1
1
10 2
10
10 3
V R (V)
10 4
MGA200
BYM36F and G
f = 1 MHz; Tj = 25 C.
Dimensions in mm.
Fig.24 Diode capacitance as a function of reverse

voltage, typical values.
DUT
handbook, full pagewidth
Fig.25 Device mounted on a printed-circuit board.
IF
(A)
+
10
0.5
25 V
t rr
1
50
0
t
0.25
0.5
IR
(A)
1
Input impedance oscilloscope: 1 M, 22 pF; tr < 7 ns.

Source impedance: 50 ; tr 15 ns.
Fig.26 Test circuit and reverse recovery time waveform and definition.
1996 Sep 18
12
MAM057
Fast soft-recovery
BYM36 series
IF halfpage
andbook,
dI F
dt
t rr
10% t
dI R
dt
100%
IR
MGC499
Fig.27 Reverse recovery definitions.
1996 Sep 18
13
Fast soft-recovery
BYM36 series
,
PACKAGE OUTLINE
handbook, full pagewidth
4.5
max
28 min
5.0 max
Dimensions in mm.
The marking band indicates the cathode.
28 min
a
1.35
max
MBC049
Fig.28 SOD64.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18
14

Data Sheet: BYM36 Series

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DISCRETE SEMICONDUCTORS

Rugged glass SOD64 package, using

High maximum operating

2/3 page k(Datasheet)

This package is hermetically sealed

Fig.1 Simplified outline (SOD64) and symbol.

continuous reverse voltage

average forward current

Ttp = 55 C; lead length = 10 mm;

repetitive peak reverse voltage

average forward current

Tamb = 65 C; PCB mounting (see

Ttp = 55 C; see Figs 8; 9 and 10

repetitive peak forward current

Tamb = 65 C; see Figs 11; 12 and 13

non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max

non-repetitive peak reverse

L = 120 mH; Tj = Tj max prior to surge;

reverse avalanche breakdown

VR = VRRMmax; see Fig.22

reverse recovery time

maximum slope of reverse recovery when switched from

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

10 lead length (mm)

10 lead length (mm)

Maximum average forward current as a

Maximum average forward current as a

Maximum average forward current as a

Maximum average forward current as a

Maximum average forward current as a

Maximum average forward current as a

a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.

a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.

Fig.14 Maximum steady state power dissipation

Fig.15 Maximum steady state power dissipation

Fig.16 Maximum steady state power dissipation

Fig.17 Maximum permissible junction temperature

Solid line = VR.

Dotted line: Tj = 175 C.

Fig.18 Maximum permissible junction temperature

Fig.19 Forward current as a function of forward

Fig.20 Forward current as a function of forward

Fig.21 Forward current as a function of forward

Fig.22 Reverse current as a function of junction

Fig.23 Diode capacitance as a function of reverse

Fig.24 Diode capacitance as a function of reverse

handbook, full pagewidth

Fig.25 Device mounted on a printed-circuit board.

Input impedance oscilloscope: 1 M, 22 pF; tr < 7 ns.

Fig.27 Reverse recovery definitions.

handbook, full pagewidth

This data sheet contains final product specifications.

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