KSC3502

KSC3502
CRT Display, Video Output
High Voltage : VCEO=200V
Low Reverse Transfer Capacitance: Cre=1.2pF @ VCB=30V

TO-126

1. Emitter

2.Collector

3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol
VCBO

Parameter
Collector-Base Voltage

Value
200

Units
V

200

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

100

mA

ICP

Collector Current (Pulse)

200

mA

PC

Collector Dissipation (TC=25C)

PC

Collector Dissipation (Ta=25C)

1.2

TJ

Junction Temperature

150

TSTG

Storage Temperature

- 55 ~ 150

Electrical Characteristics TC=25C unless otherwise noted

Symbol
BVCBO

Parameter
Collector-Base Breakdown Voltage

Test Condition
IC = 10A, IE = 0

Min.
200

Typ.

Max.

Units
V

BVCEO

Collector-Emitter Breakdown Voltage

IC = 1mA, IB = 0

200

BVEBO

Emitter-Base Breakdown Voltage

IE = 10A, IC = 0

ICBO

Collector Cut-off Current

VCB = 150V, IE = 0

IEBO

Emitter Cut-off Current

VEB = 4V, IC = 0

hFE

DC Current Gain

VCE = 10V, IC = 10mA

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 20mA, IB = 2mA

0.6

VBE(sat)

Base-Emitter Saturation Voltage

IC = 20mA, IB = 2mA

fT

Current Gain Bandwidth Product

VCE = 30V, IC = 10mA

150

MHz

Cob

Output Capacitance

VCB = 30V, f= 1MHz

1.7

pF

Cre

Reverse Transfer Capacitance

VCB = 30V, f= 1MHz

1.2

pF

40

0.1

0.1

320
V
V

hFE Classification
Classification

hFE

40 ~ 80

60 ~ 120

100 ~ 200

160 ~ 320

2000 Fairchild Semiconductor International

Rev. A, February 2000

KSC3502

Typical Characteristics

10

IB = 160 A

IB = 80 A

IB = 140 A

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

20

16

IB = 120 A
IB = 100 A

12

IB = 80 A
IB = 60 A

IB = 40 A
4

IB = 20 A

IB = 70 A
IB = 60 A

IB = 50 A

IB = 40 A
IB = 30 A

IB = 20 A
2

IB = 10 A

IB = 0

IB = 0

0
0

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

hFE, DC CURRENT GAIN

VCE = 10V

100

10

10

100

60

80

100

Figure 2. Static Characteristic

1000

40

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

1
0.1

20

1000

10

IC = 10 IB

V BE(sat)

0.1

VCE (sat)

0.01
0.1

IC[mA], COLLECTOR CURRENT

10

100

IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

160

100

VCE = 10V

f = 1MHz

120

Cob[pF], CAPACITANCE

IC[mA], COLLECTOR CURRENT

140

100

80

60

40

10

20

0
0.0

0.2

0.4

0.6

0.8

1.0

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage

2000 Fairchild Semiconductor International

1.2

0.1
0.1

10

100

1000

V CB[V], COLLECTOR-BASE VOLTAGE

Figure 6. Collector Output Capacitance

Rev. A, February 2000

KSC3502

100

Cre[pF], CAPACITANCE

f=1MHz

10

0.1
0.1

10

100

1000

fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

Typical Characteristics (Continued)

1000

VCE = 30V

100

10

1
0.1

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 7. Reverse Transfer Capacitance

10

100

1000

IC[mA], COLLECTOR CURRENT

Figure 8. Current Gain Dandwidth Product

1000

PC[W], POWER DISSIPATION

0
50

IC MAX.

100

D
C
c

25

10

25

(T

DC

(T

IC[mA], COLLECTOR CURRENT

IC MAX. (Pulse)

1ms
10ms

C)

Tc
3

Ta

1
1

10

100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 9. Safe Operating Area

2000 Fairchild Semiconductor International

1000

25

50

75

100

125

150

175

T[ C], TEMPERATURE

Figure 10. Power Derating

Rev. A, February 2000

KSC3502

Package Demensions

8.00 0.30

11.00

3.20 0.10

0.20

3.25 0.20

14.20MAX

3.90

0.10

TO-126

(1.00)

(0.50)

0.75 0.10

#1
2.28TYP
[2.280.20]

2.28TYP
[2.280.20]

16.10

0.30

13.06

0.75 0.10

0.20

1.75 0.20

1.60 0.10

+0.10

0.50 0.05

Dimensions in Millimeters
2000 Fairchild Semiconductor International

Rev. A, February 2000

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
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CoolFET
CROSSVOLT
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FACT
FACT Quiet Series
FAST
FASTr
GTO

HiSeC
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6

SuperSOT-8
SyncFET
TinyLogic
UHC
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2000 Fairchild Semiconductor International

Rev. E