AO7410

30V N-Channel MOSFET

General Description

Product Summary

The AO7410 uses advanced trench technology to

provide excellent RDS(ON), very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.

VDS

30V
1.7A

ID (at VGS=10V)
RDS(ON) (at VGS=10V)

< 55m

RDS(ON) (at VGS =4.5V)

< 65m

RDS(ON) (at VGS =2.5V)

< 85m

SC-70
(SOT-323)
Top View

D
Bottom View

G
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TA=25C

Continuous Drain
Current
Pulsed Drain Current
Power Dissipation

Junction and Storage Temperature Range

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead

Rev 5: Dec. 2012

Steady-State
Steady-State

0.35

0.22

TJ, TSTG

Symbol
t 10s

15

PD

TA=70C

12
1.3

IDM
TA=25C

Units
V

1.7

ID

TA=70C
C

Maximum
30

RJA
RJL

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-55 to 150

Typ
300
340
280

Max
360
425
320

Units
C/W
C/W
C/W

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AO7410

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V
TJ=55C

Gate-Body leakage current

VDS=0V, VGS=12V

Gate Threshold Voltage

VDS=VGS ID=250A

0.5

ID(ON)

On state drain current

VGS=10V, VDS=5V

15

Units
V

VGS(th)

100

nA

1.5

45

55

70

84

VGS=4.5V, ID=1.5A

50

65

VGS=2.5V, ID=1A

61

85

14
1

1.5

VGS=10V, ID=1.7A
Static Drain-Source On-Resistance

Max

30

VDS=30V, VGS=0V

IGSS

RDS(ON)

Typ

TJ=125C

gFS

Forward Transconductance

VDS=5V, ID=3.6A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Ciss
Input Capacitance

0.75

185

235

285

pF

25

35

45

pF

10

18

25

pF

0.9

1.8

2.7

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge

10

12

Qg(4.5V) Total Gate Charge

4.7

nC

0.95

nC

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

Qgs

Gate Source Charge

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=15V, ID=4A

nC

Qgd

Gate Drain Charge

1.6

nC

tD(on)

Turn-On DelayTime

3.5

ns

tr

Turn-On Rise Time

1.5

ns

tD(off)

Turn-Off DelayTime

17.5

ns

tf

Turn-Off Fall Time

2.5

ns

trr
Qrr

VGS=10V, VDS=15V, RL=3.75,

RGEN=3
IF=4A, dI/dt=100A/s

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/s

8.5

11

2.6

3.5

ns
nC

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25C.
D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 5: Dec. 2012

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Page 2 of 5

AO7410

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15

10
10V

VDS=5V

3V
2.5V

12

4.5V
9
ID(A)

ID (A)

125C

6
VGS=2.0V
3

0
0

25C

80

1.5

2.5

Normalized On-Resistance

1.8
VGS=2.5V

70
RDS(ON) (m
)

0.5

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)

60
VGS=4.5V
50
40

VGS=10V

VGS=4.5V
ID=3A

1.6
1.4

VGS=10V
17
ID=4A

1.2
VGS=2.5V
ID=2A

5
2
10

0.8

30
0

6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)

25

50

75

100

125

150

175

0
Temperature (C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

120

1.0E+02
ID=4A
1.0E+01

100

40

125C

80

60

IS (A)

RDS(ON) (m
)

1.0E+00
1.0E-01

125C

1.0E-02
1.0E-03

40

25C

25C

1.0E-04
1.0E-05

20
0

4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev 5: Dec. 2012

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

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AO7410

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

400
VDS=15V
ID=4A

350

8
Capacitance (pF)

VGS (Volts)

300
6

250
Ciss

200
150
100

Coss

2
50
0

Crss

0
0

2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics

12

5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30

10000

100.0

TA=25C
1000

RDS(ON)
limited

10s
100s

1.0

1ms
10ms
0.1

TJ(Max)=150C
TA=25C

Power (W)

ID (Amps)

10.0

100

10

10s
DC

0.0

0.00001
0.01

0.1

1
VDS (Volts)

10

0.001

0.1

10

1000

100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

Z JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
1

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RJA=125C/W

0.1
PD
PD

0.01

Ton

Single Pulse
Ton

0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 5: Dec. 2012

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Page 4 of 5

AO7410

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V

+ Vds

VDC

Qgs

Qgd

VDC

DUT

Vgs
Ig
Charge

R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s

RL
V ds
Vds

DUT

Vgs

90 %

Vdd

VDC

Rg

1 0%

Vgs

V gs

t d (o n )

tr

t d (o ff)

to n

tf
t o ff

D iode R ecovery T est C ircuit & W aveform s

Q rr = -

V ds +

Idt

DUT
V gs

V ds -

Isd
V gs

Ig

Rev 5: Dec. 2012

Isd

+
VD C

IF

t rr

dI/dt
I RM

V dd

V dd
V ds

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Page 5 of 5