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# Answer Key of

Electronics Engineering

GATE-2015
Forenoon Session

## 31st Jan, 2015

Attention
MADE EASY GATE 2015 aspirants
All MADE EASY students (Current Session or Previous sessions) enrolled
in Classroom Course, Postal Course, Online Test Series, Offline Test Series,
Interview Guidance are requested to inform their GATE result to MADE EASY
office, after result announcement.
MADE EASY will conduct free Post GATE Counselling Session and Reward
Distribution soon after the result announcement.

## Students can inform their result at: 011-45124612, 9958995830

or mail at: madeeasygateresult@gmail.com

GATE-2015

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## | Electronics Engg. Page

31st January 2015 Forenoon Session
1

## Section - I (General Aptitude)

Q.1

Choose the appropriate word/phrase, out of the four options given below, to
complete the following sentence :
Frogs ______________
(a) croak
(c) hiss

Ans.

Q.2

Ans.

Q.3

(b) roar
(d) patter

(a)

(a) 343/125
(b) 125/343
(c) 25/49
(d) 49/25
(a)

## Operates , and are defined by: a b =

Find the value of ( 66  6) (66 6)
(a) 2
(c) 1

Ans.

Q.4

Q.5

(b) 1
(d) 2

(c)

## Choose the word most similar meaning to the given word:

Educe
(a) Exert
(c) Extract

Ans.

a b
a +b
; ab =
; a b = ab.
a +b
a b

(b) Educate
(d) Extend

(c)

Choose the most appropriate word from the options given below to complete the
following sentence.
The principal presented the chief guest with a ___________, as token of appreciation.
(a) momento
(b) memento
(c) momentum
(d) moment

Ans.

(b)

GATE-2015

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## | Electronics Engg. Page

31st January 2015 Forenoon Session
2

Q.6

## The following question presents a sentence, part of which is underlined. Beneath

the sentence you find four ways of phrasing the underlined part. Following the
requirements of the standard written English, select the answer that produces
the most effective sentence.
Tuberculosis, together with its effects, ranks one of the leading causes of death in India.
(a) ranks as one of the leading causes of death
(b) rank as one of the leading causes of death
(c) has the rank of one of the leading causes of death
(d) are one of the leading causes of death

Ans.

Q.7

(a)

Humpty Dumpty sits on a wall every day while having lunch. The wall sometimes
breaks. A person sitting on the wall falls if the wall breaks.
Which one of the statements below is logically valid and can be inferred from
the above sentences?
(a) Humpty Dumpty always falls white having lunch
(b) Humpty Dumpty does not fall sometimes while having lunch
(c) Humpty Dumpty never falls during dinner
(d) When Humpty Dumpty does not sit on the wall, the wall does not break

Ans.

Q.8

Ans.

Q.9

(b)

A cube side 3 units is formed using a set of smaller cubes of side 1 unit. Find
the proportion of the number of faces of the smaller cubes visible to those which
are NOT visible.
(a) 1 : 4
(b) 1 : 3
(c) 1 : 2
(d) 2 : 3
(c)

Ans.

(3)

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
3

Q.10

## Read the following paragraph and choose the correct statement.

Climate change has reduced human security and threatened human well being.
An ignored reality of human progress is that human security largely depends upon
environmental security. But on the contrary, human progress seems contradictory
to environmental security. To keep up both at the required level is a challenge
to be addressed by one and all. One of the ways to curb the climate change may
be suitable scientific innovations, while the other may be the Gandhian perspective
on small scale progress with focus on sustainability.
(a) Human progress and security are positively associated with environmental security.
(b) Human progress is contradictory to environmental security.
(c) Human security is contradictory to environmental security.
(d) Human progress depends upon environmental security.

Ans.

(b)

## Section - II (Electronics and Communication Engineering)

Q.1

Ans.

Q.2

Ans.

Q.3

A silicon sample is uniformly doped with donor type impurities with a concentration
of 1016/cm3. The electron and hole mobilities in the sample are 1200 cm2/V-s and
400 cm2/V-s respectively. Assume complete ionization of impurities. The charge
of an electron is 1.6 1019 C. The resistivity of the sample (in -cm) is________.
(0.520)

## Negative feedback in a closed-loop control system DOES NOT

(a) reduce the overall gain
(b) reduce bandwidth
(c) improve disturbance rejection
(d) reduce sensitivity to parameter variation
(b)

In the network shown in the figure, all resistors are identical with R = 300 .
The resistance Rab (in ) of the network is ______________.
a
R

Rab

R
R

R = 300
R

Ans.

(100)

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Announces
Meritorious Awards
For its ESE-2014 & GATE-2015
Selected Candidates

11

AIR

AIR
AIR

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## These awards will be given only to MADE EASY Current/Previous year

students enrolled in Classroom/ Postal/ Online test/ Interview Guidance).
Note: Those candidates whose name/photo appears in other institute will not be eligible for these award.

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
4

Q.4

In the circuit shown, at resonance, the amplitude of the sinusoidal voltage (in
Volts) across the capacitor is ____________.
4

0.1 mH

+
1 F

## 100 cost (V)

Ans.

Q.5

(25)

Suppose A and B are two independent events with probabilities P(A) 0 and
P(B) 0. Let A and B be their complements. Which one of the following
statements is FALSE?
(a) P(A B) = P(A) P(B)
(b) P(A/B) = P(A)
(c) P(A B) = P(A) + P(B)

Ans.

Q.6

Ans.

Q.7

(d) P ( A B ) = P ( A )P ( B )

(c)

## In the circuit shown, the switch SW is thrown from position A to position B at

time t = 0. The energy (in J) taken from the 3 V source to charge the 0.1 F
capacitor form 0 V to 3 V is
SW
120
(a) 0.3
3V
B
A
(b) 0.45
t=0
(c) 0.9
0.1 F
(d) 3
(c)

## Let z = x + iy be a complex variable. Consider that contour integration is performed

along the unit circle in anticlockwise direction. Which one of the following
statements is NOT TRUE?
z
at z = 1 is 1/2
(a) The residue of 2
z 1
(b)

 C z 2dz = 0

1
1
C z dz = 1
2i 
(d) z (complex conjugate of z) is analytical function
(c)

Ans.

(d)

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
5

Q.8

Consider a straight, infinitely long, current carrying conductor lying on the zaxis. Which one of the following plots (in linear scale) qualitatively represents the
dependence of H on r, where H is the magnitude of the azimuthal component
of magnetic field outside the conductor and r is the radial distance from the
conductor?
H

(a)

(b)
r

(a)

(b)

(c)

(d)
r

(c)

Ans.

Q.9

(d)

(c)

## The waveform of aperiodic signal x(t) is shown in the figure.

x(t)
3
2
4

1
1

4
2

t 1
A signal g(t) is defined by g(t) = x
. The average power of g(t) is ___________.
2
Ans.

Q.10

Ans.

(6)

## Consider a system of linear equations :

x 2y + 3z = 1,
x 3y + 4z = 1, and
2x + 4y 6z = k
The value of k for which the system has infinitely many solution is _________.
(2)

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
6

Q.11

Ans.

Q.12

A function f(x) = 1 x2 + x3 is defined in the closed interval [1, 1]. The value
of x, in the open interval (1, 1) for which the mean value theorem is satisfied,
is
(a) 1/2
(b) 1/3
(c) 1/3
(d) 1/2
(b)

## A sinusoidal signal of 2 kHz frequency is applied to a delta modulator. The

sampling rate and step-size of the delta modulator are 20,000 samples per second
and 0.1 V, respectively. To prevent slope overload, the maximum amplitude of
the sinusoidal signal (in Volts) is
1
2
2
(c)

(a)

Ans.

Q.13

(b)

(d)

(a)


z

## medium is given by E( z ,t ) = a y 2cos 108 t

V/m. The wavelength (in m) for

2
the wave is___________.

Ans.

Q.14

(8.89)

4
I
+
V2

5A

(a) 5 V, 25 V
(c) 15 V, 35 V
Ans.

2I

+
V1

(b) 10 V, 30 V
(d) 0 V, 20 V

(a)

GATE-2015

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## | Electronics Engg. Page

31st January 2015 Forenoon Session
7

Q.15

Ans.

Q.16

Ans.

Q.17

Ans.

Q.18

Ans.

Q.19

## Consider a four bit D to A converter. The analog value corresponding to a digital

signals of values 0000 and 0001 are 0 V and 0.0625 V respectively. The analog
value (in Volts) corresponding to the digital signal 1111 is ____________.
(0.9375)

In an 8085 microprocessor, the shift registers which store the result of an addition
and the overflow bit are, respectively
(a) B and F
(b) A and F
(c) H and F
(d) A and C
(b)

## A region of negative differential resistance is observed in the current voltage

characteristics of a silicon PN junction if
(a) both the P-region and the N-region are heavily doped
(b) the N-region is heavily doped compared to the P-region
(c) the P-region is heavily doped compared to the N-region
(d) an intrinsic silicon region is inserted between the P-region and the N-region
(a)

## (t) sin(2 fct) where m

(t) denotes
Consider the signal s(t) = m(t) cos (2 fct) + m
the Hilber transform of m(t) and the bandwidth of m(t) is very small compared
to fc. The signal s(t) is a
(a) high-pass signal
(b) low-pass signal
(c) band-pass signal
(d) double sideband suppressed carrier signal

(c)

## (a) first quadrant

Ans.

10( s + 1)
for < will be in the
s + 10

(a)

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
8

Q.20

Ans.

Q.21

Ans.

Q.22

(a) x(t + t0)
(b) x(t t0)
(c) x(t + t0)
(d) x(t t0)
(d)

## A 16 Kb (=16,384 bit) memory array is designed as a square with an aspect ratio

of one (number of rows is equal to the number of columns). The minimum number
of address lines needed for the row decoder is ____________.
(7)

For the circuit with ideal diodes shown in the figure, the shape of the output (vout)
for the given sine wave input (vin) will be
+
+
0

0.5 T

vout

vin

(a) 0

(c)

0.5 T

0.5 T

(b)

(d)
0

Ans.

Q.23

0.5 T

0.5 T

(c)

4 1 2
1

14 4 10
3
is

Ans.

(17)

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
9

Q.24

In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6
V. The output voltage V0 (in volts) is____________.
1 k

+
10 V

Ans.

Q.25

1 k

V0

(5)

## A unity negative feedback system has the open-loop transfer function

K
. The value of the gain K (>0) at which the root locus crosses
s( s + 1)s( +3)
the imaginary axis is ___________.
G( s) =

Ans.

Q.26

(12)

For the NMOSFET in the circuit shown, the threshold voltage is Vth, where Vth
> 0. The source voltage VSS is varied from 0 to VDD. Neglecting the channel length
modulation, the drain current ID as a function of VSS is represented by
VDD

Vss

ID

ID

(a)

(b)
VDD VTh

Vss

VTh

ID

ID

(c)

(d)
VDD VTh

Ans.

Vss

Vss

VDD VTh

Vss

(a)

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
10

Q.27

## The longitudinal component of the magnetic field inside an air-filled rectangular

waveguide made of a perfect electric conductor is given by the following expression
Hz (x, y, z, t) = 0.1 cos(25x) cos(30.3 y) cos(12 109 t z) (A/m)
(a) TM12
(b) TM21
(c) TE21
(d) TE12

Ans.

Q.28

(c)

The input X to Binary Symmetric Channel (BSC) shown in the figure is 1 with
probability of 0.8. The cross-over probability is 1/7. If the received bit Y = 0, the
conditional probability that 1 was transmitted is ____________.
X
0
P [X = 0] = 0.2

Y
0

6/7
1/7

7
1/

P [X = 1] = 0.8
1

Ans.

Q.29

Ans.

Q.30

6/7

(0.4)

The transmitted signal in a GSM system is of 200 kHz bandwidth and 8 users
share a common bandwidth using TDMA. If at a given time 12 users are talking
in a cell, the total bandwidth of the signal received by the base station of the
cell will be at least (in kHz)___________.
(*)

## A lead compensator network includes a parallel combination of R and C in the

feed-forward path. If the transfer function of the compensator is Gc ( s ) =
the value of RC is____________.

Ans.

s+2
,
s+4

(0.5)

GATE-2015

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## | Electronics Engg. Page

31st January 2015 Forenoon Session
11

Q.31

Consider a uniform plane wave with amplitude (E0) of 10 V/m and 1.1 GHz
frequency travelling an air, and incident normally on a dielectric medium with
complex relative permittivity (r) and permeability (r) as shown in the figure.
Air
= 120

Dielectric
r = 1 j2
r = 1 j2

10 cm

E = ?

E0 = 10 V/m
Freq. = 1.1 GHz

The magnitude of the transmitted electric field component (in V/m) after it has
travelled a distance of 10 cm inside the dielectric region is____________.
Ans.

Q.32

Ans.

Q.33

(0.1)

For a silicon diode with long P and N regions, the accepter and done impurity
concentrations are 1 1017 cm3 and 1 1015 cm3, respectively. The lifetimes
of electrons in P region and holes in N region are both 100 s. The electron and
hole diffusion coefficients are 49 cm2/s and 36 cm2/s, respectively. Assume
kT/q = 26 mV, the intrinsic carrier concentration is 1 1010 cm3, and
q = 1.6 1019 C. When a forward voltage of 208 mV is applied across the diode,
the hole current density (in nA/cm2) injected from P region to N region is _______.
(286.17)

K
1

## A plant transfer function is given as G( s) = K P + I

. When the plant

s s( s + 2)

operates in a unity feedback configuration, the condition for the stability of the
closed loop system is
KI
>0
2
(c) 2KI < KP

(a) K P >

Ans.

(d) 2KI > KP

(a)

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
12

Q.34

Which one of the following graphs describes the function f(x) = ex(x2 + x + 1)?
f (x )

f (x )

(a)

(b)
x

f (x )

f (x )

(c)

(d)
x

Ans.

Q.35

(b)

## A 3-input majority gate is defined by the logic function M(a, b, c) = ab + bc +

ca. Which one of the following gate is represented by the function
M ( M ( a ,b, c ), M ( a ,b, c )c )?

## (a) 3-input NAND gate

(c) 3-input NOR gate
Ans.

Q.36

## (b) 3-input XOR gate

(d) 3-input XNOR gate

(b)

In the system shown in Figure (a), m(t) is a low-pass signal with bandwidth W
Hz. The frequency response of the band-pass filter H(f) is shown in Figure (b).
If it is desired that the output signal z(t) = 10 x(t), the maximum value of W (in Hz)
should be strictly less than ____________.
x(t) = m(t) cos(2400t )

Amplifier

H(f )
Band-pass
filter

z(t )

1700

f (Hz)

Fig. (a)
H (f )

1700

700

700

Fig. (b)

Ans.

(350)

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
13

Q.37

Ans.

Q.38

## A MOSFET in saturation has a drain current of 1 mA for VDS = 0.5 V. If the

channel length modulation coefficient is 0.05 V1, the output resistance (in k)
of the MOSFET is ____________
(20)

For the discrete-time system shown in the figure, the poles of the system transfer
function are located at
(a) 2, 3
x[n]

1
,3
(b)
2
1 1
,
(c)
2 3

(d) 2,
Ans.

Q.39

1
6

5
6
Z

y[n]

1
3

(c)






A vector P is given by P = x 3 yax x 2 y 2a y x 2 yz az Which of the following
statements is TRUE?


(b) P is irrotational, but not solensoidal

(c) P is neither solenoidal nor irrotational


## (d) P is both solenoidal and irrotational

Ans.

Q.40

(a)

In the circuit shown, assume that the opamp is ideal. The bridge output voltage
V0 (in mV) for = 0.05 is ____________.
100

250 (1 )

250 (1 )

250 (1 + )
+
V0

250 (1 + )
100

Ans.

50

(250)

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
14

Q.41

The circuit shown in the figure has an ideal opamp. The oscillation frequency
and the condition to sustain the oscillations, respectively, are
R1
R2

Vo

2C

Ans.

Q.42

2R

(a)

1
and R1 = R2
CR

(b)

1
and R1 = 4R2
CR

(c)

1
and R1 = R2
2CR

(d)

1
and R1 = 4R2
2CR

(d)

## In the circuit shown, I1 = 80 mA and I2 = 4 mA. Transistors T1 and T2 are

identical. Assume that the thermal voltage VT is 26 mV at 27 C. At 50 C, the
value of voltage V12 = V1 V2 (in mV) is
Vs
I2

I1

V2

T2

Ans.

Q.43

Ans.

V1

V12

T1

(83.15)

The built-in potential of an abrupt p-n junction is 0.75 V. If its junction capacitance
(CJ) at a reverse bias (VR) of 1.25 V is 5 pF, the value of CJ (in pF) when VR = 7.25 V
is_______.
(2.5)

GATE-2015

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## | Electronics Engg. Page

31st January 2015 Forenoon Session
15

Q.44

Ans.

Q.45

The electric field intensity of a plane wave traveling in free space is given by the
following expression
E(x, t) = ay 24 cos(t k0x) (V/m)
In this field, consider a square area 10 cm 10 cm on a plane x + y = 1. The
total time-averaged power (in mW) passing through the square area is___________.
(53.29)

G( s) =

K ( s + 4)
( s + 8)( s2 9)

## . The value of a gain K(>0) for which 1+ j2 lies on the root

locus is __________.
Ans.

Q.46

(25.54)

## In the circuit shown, switch SW is closed at t = 0. Assuming zero initial conditions,

the value of vc(t) (in Volts) at t = 1 sec is ______________.
t=0

SW
10 V

Ans.

Q.47

Q.48
Ans.

+
vC(t)

(2.528)

## The solution of the differential equation

(a) (2 t)et
(c) (2 + t)et

Ans.

5
F
6

d2 y

dy
+ y = 0 with y(0) = y(0) = 1 is
dt
dt
(b) (1 + 2t)et
(d) (1 2t)et
2

+2

(b)

The maximum area (in square unit) of a rectangle whose vertices lies on the ellipse
x2 + 4y2 = 1 is_______
(4)

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
16

Q.49

## The Boolean expression F(X, T, Z) = XYZ+XYZ+XYZ+XYZ converted into canonical

product of sum (POS) form is
(a) (X+Y+Z)(X+Y+Z)(X+Y+Z)(X+Y+Z)
(b) (X+Y+Z)(X+Y+Z)(X+Y+Z)(X+Y+Z)
(c) (X+Y+Z)(X+Y+Z)(X+Y+Z)(X+Y+Z)
(d) (X+Y+Z)(X+Y+Z)(X+Y+Z)(X+Y+Z)

Ans.

(a)

Q.50

Ans.

(a)

R2C
2L

(b)

2L
R2C

(c)

R C
2 L

(d)

2 L
R C

(c)

Q.51

## The pole-zero diagram of a causal and stable discrete-time system is shown in

the figure. The zero at the origin has multiplicity 4. The impulse response of the
system is h[n]. If h = 1, we can conclude
Img (z)

0.5

0.5

0.5

Re (z)

0.5

Ans.

(c)

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GATE-2015

## | Electronics Engg. Page

31st January 2015 Forenoon Session
17

Q.52

## Two sequences [a, b, c] and [A, B, C] are related as,

A
B =

C

1
1
1

1
W32
1 W3

2
W34
1 W3

a
2
b where W = e j 3
3

c

## If another sequence [p, q, r] is derived as,

p

q =
c

1 1 0
0 A / 3
1 1

1
2
2
0 B / 3
1 W3 W3 0 W3

2
4
4

1 W3 W3 0 0 W3 C / 3

## then the relationship between the sequences [p, q, r] and [a, b, c] is

(a) [p, q, r] = [b, a, c]
(b) [p, q, r] = [b, c, a]
(c) [p, q, r] = [c, a, b]
(d) [p, q, r] = [c, b, a]
Ans.

Q.53

(c)

All the logic gates shown in the figure have a propagation delay of 20 ns. Let
A = C = 0 and B = 1 until time t = 0. At t = 0, all the inputs flip (i.e. A = C = 1 and
B = 0) and remain in that state. For t > 0, output Z = 1 for a duration (in ns) of
A
B

Ans.

Q.54

(40)

In the given circuit, the maximum power (in Watts) that can be transferred to
the load RL is
2

40 Vrms

Ans.

j2

RL

(1.649)

GATE-2015

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## | Electronics Engg. Page

31st January 2015 Forenoon Session
18

Q.55

## A source emits bit 0 with probability

1
2
and bit with probability . The emitted
3
3

bits are communicated to the receiver. The receiver decides for either 0 or 1 based
on the received value R. It is given that the conditional density functions of R
as
1
1
, 3 x 1
, 1 x 5
fR0 (r ) = 4
and fR0 (r ) = 6
0, otherwise
0, otherwise

1
12
1
(d)
6

(a) 0
(c)
Ans.

(b)

1
9

(b)