AOD4184A

40V N-Channel MOSFET

General Description

Product Summary

The AOD4184A combines advanced trench MOSFET

technology with a low resistance package to provide
extremely low RDS(ON). This device is well suited for high
current load applications.

VDS

40V
50A

ID (at VGS=10V)
RDS(ON) (at VGS=10V)

< 7m

RDS(ON) (at VGS = 4.5V)

< 9.5m

100% UIS Tested

100% Rg Tested

TO252
DPAK
Top View

D
Bottom View

D
D

Absolute Maximum Ratings TA=25C unless otherwise noted

Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G

TC=25C

Pulsed Drain Current

Avalanche Current C
Avalanche energy L=0.1mH

TC=25C
Power Dissipation

TA=25C
Power Dissipation A

Junction and Storage Temperature Range

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case

Rev0 : Sep 2009

IAS, IAR

35

EAS, EAR

61

mJ

50

Steady-State
Steady-State

25
2.3

RJA
RJC

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1.5

TJ, TSTG

Symbol
t 10s

10

PDSM

TA=70C

13

PD

TC=100C

120

IDSM

TA=70C

20
40

IDM
TA=25C

Continuous Drain
Current

Units
V

50

ID

TC=100C

Maximum
40

-55 to 175

Typ
18
44
2.4

Max
22
55
3

Units
C/W
C/W
C/W

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AOD4184A

Electrical Characteristics (TJ=25C unless otherwise noted)

Parameter

Symbol

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V
VDS=40V, VGS=0V

IGSS

Gate-Body leakage current

VDS=0V, VGS= 20V

Gate Threshold Voltage

VDS=VGS ID=250A

1.7

ID(ON)

On state drain current

VGS=10V, VDS=5V

120

VGS=10V, ID=20A
TJ=125C
VGS=4.5V, ID=15A

100

nA

2.6

5.8

9.6

12

7.6

9.5

gFS

Forward Transconductance

VDS=5V, ID=5A

37

Diode Forward Voltage

IS=1A,VGS=0V
Maximum Body-Diode Continuous Current

0.7

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr
Qrr

VGS=0V, VDS=20V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=20V, ID=20A

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s

m
m
S

20

1200

1500

1800

pF

150

215

280

pF

80

135

190

pF

3.5

21

27

33

nC

10

14

17

nC

nC

nC

VGS=10V, VDS=20V, RL=1,

RGEN=3
IF=20A, dI/dt=100A/s

2.1

VSD
IS

Units
V

1
TJ=55C

Static Drain-Source On-Resistance

Max

40

VGS(th)

RDS(ON)

Typ

ns

17

ns

30

ns

17

ns

20

29

38

18

26

34

ns
nC

A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25C.
D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0 : Sep 2009

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AOD4184A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

100

10V
5V

VDS=5V

4V

80

4.5V

60

60
ID(A)

ID (A)

80

40

40
VGS=3.5V

20

125C

20

25C

0
0

3.5

4.5

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
9
Normalized On-Resistance

2.2
VGS=4.5V

8
RDS(ON) (m)

2.5

7
6
VGS=10V

5
4

VGS=10V
ID=20A

1.8

17
5
2
VGS=4.5V10

1.6
1.4
1.2

ID=15A

1
0.8

10

15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)

25

50

75

100

125

150

175

200

Temperature (C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)

25

1.0E+02
ID=20A

1.0E+01

20

40

15

IS (A)

RDS(ON) (m)

1.0E+00
125C

10

125C

1.0E-01
1.0E-02

25C

1.0E-03
5

25C

1.0E-04
1.0E-05

0
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev 0: Sep 2009

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

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AOD4184A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

2500
VDS=20V
ID=20A

2000
Capacitance (pF)

VGS (Volts)

Ciss
1500

1000

500

0
0

10

15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics

30

10

20
30
VDS (Volts)
Figure 8: Capacitance Characteristics

40

900
10s

10s

RDS(ON)
limited

10.0

100s
1ms
10ms

DC
1.0

TJ(Max)=175C
TC=25C

0.1
0.0
0.01

0.1

1
VDS (Volts)

10

100

Power (W)

100.0
ID (Amps)

Crss
0

1000.0

10

D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC

TJ(Max)=175C
TC=25C

600

17
5
2
10

300

0
1E-05 0.0001 0.001

0.1

10

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

RJC=3C/W

0.1

PD
Ton

0.01
0.00001

0.01

Pulse Width (s)

18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

ZJC Normalized Transient

Thermal Resistance

Coss

Single Pulse
0.0001

0.001

0.01

0.1

10

100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 0: Sep 2009

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Page 4 of 6

AOD4184A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

60
TA=100C

TA=125C

TA=150C

Power Dissipation (W)

IAR (A) Peak Avalanche Current

TA=25C

10

50
40
30
20
10
0

10
100
1000
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)

25

50

75

100

150

175

10000

60

TA=25C

50

1000
40

Power (W)

Current rating ID(A)

125

TCASE (C)
Figure 13: Power De-rating (Note F)

30
20

17
5
2
10

100

10
10

1
0.00001

0
0

25

50

75

100

125

150

175

ZJA Normalized Transient

Thermal Resistance

10

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA

0.001

0.1

10

1000

Pulse Width (s)

18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

TCASE (C)
Figure 14: Current De-rating (Note F)

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

RJA=55C/W

0.1
PD

0.01

Ton

Single Pulse
0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 0: Sep 2009

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Page 5 of 6

AOD4184A

Gate Charge Test Circuit & W aveform

Vgs
Qg
10V

+ Vds

VDC

VDC

DUT

Qgs

Qgd

Vgs
Ig
Charge

Resistive Switching Test Circuit & W aveforms

RL
Vds
Vds

Vgs

90%

+ Vdd

DUT

VDC

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

ton

tf
toff

Unclamped Inductive Switching (UIS) Test Circuit & W aveforms

L

E AR = 1/2 LIAR

Vds

BVDSS

Vds

Id

+ Vdd

Vgs

Vgs

VDC

Rg

I AR
Id

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT

Vds -

Isd
Vgs

Ig

Rev 0: Sep 2009

Vgs

Isd

+ Vdd

VDC

IF

t rr

dI/dt
I RM

Vdd

Vds

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Page 6 of 6