STB270N4F3

Automotive-grade N-channel 40 V, 1.6 m typ., 160 A

STripFET F3 Power MOSFET in a D2PAK package
Datasheet - production data

Features
Type

VDS

RDS(on)
max

STB270N4F3

40 V

2.0 m

7$%

ID

PTOT

160 A 330 W

Designed for automotive applications and

AEC-Q101 qualified

100% avalanche tested

Standard threshold drive

'3$.

Applications
Figure 1. Internal schematic diagram

Switching application

Description
'7$%

This device is an N-channel Power MOSFET

developed using STripFET F3 technology. It is
designed to minimize on-resistance and gate
charge to provide superior switching
performance.

*

6

$0Y

Table 1. Device summary

Order codes

Marking

Package

Packaging

STB270N4F3

270N4F3

DPAK

Tape and reel

February 2015
This is information on a product in full production.

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www.st.com

Contents

STB270N4F3

Contents
1

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1

Electrical characteristics (curves)

.............................. 6

Test circuit

Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1

................................................ 8

D2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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STB270N4F3

Electrical ratings

Electrical ratings
Table 2. Absolute maximum ratings
Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

40

VGS

Gate-source voltage

20

ID(1)

Drain current (continuous) at TC = 25 C

160

ID(1)

Drain current (continuous) at TC=100 C

160

Drain current (pulsed)

640

IDM

(2)

PTOT

Total dissipation at TC = 25 C

330

dv/dt(3)

Peak diode recovery voltage slope

3.5

V/ns

EAS(4)

Single pulse avalanche energy

TJ
Tstg

Operating junction temperature

Storage temperature

-55 to 175

Value

Unit

1. Current limited by package

2. Pulse width limited by safe operating area
3. ISD 120 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
4. Starting Tj=25 C, ID =80 A, VDD= 32 V

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Thermal resistance junction-case max

0.45

C/W

Rthj-pcb(1)

Thermal resistance junction-pcb max

35

C/W

1. When mounted on 1inch FR-4 board, 2 oz Cu.

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Electrical characteristics

STB270N4F3

Electrical characteristics
(TCASE=25 C unless otherwise specified)
Table 4. On/off states
Symbol

Parameter

Test conditions

Drain-source breakdown
voltage

ID = 250 A, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 40 V
VDS = 40 V, Tj = 125 C

IGSS

Gate body leakage current

VGS = 20 V
(VDS = 0)

V(BR)DSS

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 A

RDS(on)

Static drain-source on
resistance

VGS= 10 V, ID= 80 A

Min.

Typ.

Max.

40

Unit
V

2
1.6

10
100

A
A

200

nA

2.0

Table 5. Dynamic
Symbol

Parameter

gfs (1)

Forward
transconductance

Ciss

Input capacitance

Coss

Output capacitance

Crss

Reverse transfer
capacitance

Qg

Total gate charge

Qgs

Gate-source charge

Qgd

Gate-drain charge

Test conditions
VDS =15 V, ID = 80 A

VDS =25 V, f=1 MHz, VGS=0

VDD=20 V, ID = 160 A
VGS =10 V
(see Figure 14)

Min.

Typ.

Max. Unit

200

7400

pf

1800

pF

47

pF

110

27

nC

25

nC

Min.

Typ.

22

ns

180

ns

110

ns

45

ns

150

nC

1. Pulsed: pulse duration=300s, duty cycle 1.5%

Table 6. Switching times

Symbol
td(on)
tr
td(off)
tf

4/15

Parameter

Test conditions

Turn-on delay time

Rise time
Turn-off delay time

VDD=20 V, ID= 80 A,
RG=4.7 , VGS=10 V
(see Figure 16)

Fall time

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Max. Unit

STB270N4F3

Electrical characteristics

Table 7. Source drain diode

Symbol
ISD
ISDM

(1)

VSD(2)

Parameter

Test conditions

Min

Typ.

Max

Unit

Source-drain current

160

Source-drain current (pulsed)

640

1.5

Forward on voltage

ISD=80 A, VGS=0

trr

Reverse recovery time

70

ns

Qrr

Reverse recovery charge

225

nC

IRRM

Reverse recovery current

ISD=160 A,
di/dt = 100 A/s,
VDD=32 V, Tj=150 C
(see Figure 15)

3.2

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300 s, duty cycle 1.5%

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Electrical characteristics

2.1

STB270N4F3

Electrical characteristics (curves)

Figure 2. Safe operating area

Figure 3. Thermal impedance

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Figure 4. Output characteristics

Figure 5. Transfer characteristics

Figure 6. Static drain-source on-resistance

Figure 7. Normalized BVDSS vs temperature

HV29690

RDS(on)
(m)
2.10
2.00
1.90

VGS=10V

1.80
1.70
1.60
1.50
1.40
1.30
0

6/15

20

40

60

80

100 120 140 ID(A)

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STB270N4F3

Electrical characteristics

Figure 8. Gate charge vs gate-source voltage

Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage vs

temperature

Figure 11. Normalized on resistance vs

temperature

Figure 12. Source-drain diode forward

characteristics
AM04229v1

VSD (V)
0.95
0.90
0.85
0.80

TJ=-50C

TJ=25C

0.75
0.70
0.65

TJ=175C

0.60
0.55
0.50
0.45
0.40 0

20 40 60 80 100 120 140 160 180 ISD(A)

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Test circuit

STB270N4F3

Test circuit
Figure 13. Switching times test circuit for
resistive load

Figure 14. Gate charge test circuit

VDD
12V

47k

1k
100nF

3.3
F

2200

RL

IG=CONST

VDD

VGS

100

Vi=20V=VGMAX

VD
RG

2200
F

D.U.T.

D.U.T.
VG

2.7k

PW
47k
1k

PW
AM01468v1

Figure 15. Test circuit for inductive load

switching and diode recovery times

AM01469v1

Figure 16. Unclamped inductive load test circuit

D
G

D.U.T.

FAST
DIODE

VD

L=100H

3.3
F

25

1000
F

VDD

2200
F

3.3
F

VDD

ID

G
RG

Vi

D.U.T.

Pw
AM01470v1

AM01471v1

Figure 17. Unclamped inductive waveform

Figure 18. Switching time waveform

ton

V(BR)DSS

tdon

VD

toff
tr

tdoff

tf

90%

90%
IDM

10%
ID
VDD

10%

0
VDD

VDS
90%

VGS

AM01472v1

8/15

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AM01473v1

STB270N4F3

Package information

Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

4.1

D2PAK package information

Figure 19. DPAK (TO-263) outline

B9

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Package information

STB270N4F3

Table 8. DPAK (TO-263) mechanical data

mm
Dim.
Min.

Typ.

4.40

4.60

A1

0.03

0.23

0.70

0.93

b2

1.14

1.70

0.45

0.60

c2

1.23

1.36

8.95

9.35

D1

7.50

7.75

8.00

D2

1.10

1.30

1.50

10

E1

8.50

8.70

8.90

E2

6.85

7.05

7.25

10.40

2.54

e1

4.88

5.28

15

15.85

J1

2.49

2.69

2.29

2.79

L1

1.27

1.40

L2

1.30

1.75

R
V2

10/15

Max.

0.4
0

DocID13208 Rev 5

STB270N4F3

Package information
Figure 20. DPAK footprint(a)

)RRWSULQW

a. All dimension are in millimeters

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Packing information

STB270N4F3

Packing information
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12/15

DocID13208 Rev 5

STB270N4F3

Packing information
Figure 22. Reel

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Table 9. DPAK (TO-263) tape and reel mechanical data

Tape

Reel

mm

mm

Dim.

Dim.
Min.

Max.

A0

10.5

10.7

B0

15.7

15.9

1.5

1.5

1.6

12.8

D1

1.59

1.61

20.2

1.65

1.85

24.4

11.4

11.6

100

K0

4.8

5.0

P0

3.9

4.1

P1

11.9

12.1

Base qty

1000

P2

1.9

2.1

Bulk qty

1000

50

0.25

0.35

23.7

24.3

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Min.

Max.
330

13.2

26.4

30.4

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Revision history

STB270N4F3

Revision history
Table 10. Revision history
Date

Revision

07-Feb-2007

Initial release.

02-Apr-2008

Some value changes onTable 2

06-May-2009

Changed: Description and Figure 12: Source-drain diode

forward characteristics

14-Jul-2009

Removed package and mechanical data: TO-220

The part number STI270N4F3 has been moved to a separate

document.
Updated title, features and description cover page.
Updated Table 2: Absolute maximum ratings, Table 3: Thermal
data.
Updated Section 4: Package information and Section 5:
Packing information.
Minor text changes.

26-Feb-2015

14/15

Changes

DocID13208 Rev 5

STB270N4F3

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