Beruflich Dokumente
Kultur Dokumente
lmad MOUGHARBEL,
1989
1, = 0.71 I
I,=
V,
1.63 E
V,
0.82E
V, = f 0.82E
f 0.82E
W33AN
W33NA
Cf
443--1 --@ti
I, = 0 71 I
I, = 0.71 I
*,=I
I,
1.93E
V,
1.93E
V,
1.12 E
V,
1.93E
k 1.93E
f 0.52E
1.41 E
f 1.12E
f 0.82E
f 0.30 E
Cf = 0.73
,V
Vi = 1.93 E
V,
V, =
v33YA
I,
I,
V,
1.93E
V,
1.93E
k 1.93E
0.52E
f 1.41E
1.12 E
* 1.12E
,V
f 0.82E
f 0.30 E
Cf = 0.73
I,
I W32YA
W32AY
I,
I,=
On
I,
0.71I
I - i -0
V,
3.35 E
V,
1.12E
*+ 1.12
E
0.82E
V,
W33DA
058 I
3.35 E
V, = 1.12E
V,
1.93E
f 1.93E
0.52E
f 1.41E
= f 1.12E
f 0.82E
r . - - n A Q
voltage
21
-5T
T
On
=--T
12
V,
C f = 0.42
"._&
W32AD
0.82I
*f 1.12
E
0.82 E
Trec =
-?12T
21
-GT
---It
12
1
2
To,,= - T
,,T
21
-GT
I -+-
V,
U33DA
f 0.30 E
rms line-to-line
Toff =
Cf = 0.73
E : per-unit
T,
= 0.71 I
V,
5
=--T
5
Toff = - 2 T
V33AD
I,
T
Cf = 0.73
0.41I
V, = 3.35 E
"f
W33AD
0.58 1
- E
f 0.30
W32DA
To,
0.71I
I,=
V,
W33AA
Cf = 0.73
I, = 0.71 I
V33AY
0.58 I
V,
V,
W33AY
f 1.41E
f141E
Cf = 0.86
f 0.82E
0.86
f 0.30E
Cf = 0.36
I : per-unit
T,
--
1990
THYRISTOR SWITCH
A)
SOURCE
Ac
+-w=+
LINE VOLTAGE
CONTROL SIGNAL
'
'
THYRISTOR VOLTAGE
The circuits have been named according to the identification code of the IEEE Standard 4 2 8 [81. The first
letter identifies the basic control elements used: U, single
thyristor; V, one thyristor and one diode back-to-back and
W, t w o back-to-back thyristors. The next t w o digits represent respectively, the number of phases and the number of
control elements. The last t w o letters specify the controller and the load connections: D, for a delta connection; Y,
for a three-wire wye connection; N, for a four-wire wye
connection; A, for nondescript connections.
These configurations can be divided into three different groups. The configurations of the first group are
obtained by connecting three-single phase circuits. In the
first t w o circuits, W33NA and W33AN, the switches and
the capacitors are in series and connected in wye. The
wye center point is tied t o the system neutral. In the case
of the third one, W33AA, the switches and capacitors are
in series and connected in delta. It is important to note
that there is no interaction between the three legs: a single
equation can be used to describe the operation of the
three switches. The second group of configurations can be
characterized by the existence of an interaction between
the three-switches; the closing and opening of a switch
depend on the actual state of the other t w o switches. The
first sub-group, configurations W33YA, W33AY and
W33AD, uses three back-to-back thyristors as switches;
the second sub-group, configurations V33YA, V33AY and
V33AD, uses one diode and one thyristor per switch and
the third sub-group, configurations W32YA, W32DA,
W32AY and W33AY. uses only t w o all-thyristor switches.
The configurations in each sub-group differ from one
another either by the position of the thyristors or by the
capacitor connection (wye or delta). Configurations
W32YA and W32DA are special. These t w o circuits are
electrically identical, however the first one is derived from
W33YA and the second from W33DA. The last group,
configurations W33DA and U33DA, constitute the only
circuits with delta connected switches. Both of them
present peculiar behavior. In the case of W33DA, the
current distribution between the thyristors depends on the
on-state voltage drop of the devices and in the case of
U33DA the thyristors cannot be turned on again until the
capacitor voltage drops t o a critical value.
Another basic difference exists between the singlephase configurations and the other circuits. While the
single-phase configurations can be reclosed without any
restrictions, the other configurations require the switches
to be closed in a well defined manner. If this defined
sequence is not followed, the residual capacitor voltages
are such that the voltage across one of the switches will
never pass through zero and, therefore, cannot be closed
without causing a transient. Fig. 3 illustrates this problem
for both wye and delta connected capacitors. The capacitors were left charged after an initial operation of the
switches. In both cases if switch Ka closes first, when the
Eac voltage becomes equal to the maximum line-to-line
voltage, switch Kb can be closed 270 later. However, if
switch Kb closes first the voltage across switch Ka never
passes through zero. Simple analysis shows that t o avoid
latchwp the first switch t o be closed must be the switch
that sees the peak line-to-line voltage.
The circuits of Fig. 2 differ from one another. In
addition to the obvious differences in thyristor and capacitor current ratings due t o the wye or delta arrangements,
there are differences in their turn-on and turn-off delays,
the peak voltage across the switches and the peak capacitor voltage. Fig. 2 gives the thyristor and capacitor rms
currents (It and IC) and peak voltages (Vt and Vc), the dc
voltages appearing across the capacitors when the
switches are opened (Vdc), the maximum turn-on time
with capacitors completely discharged (Ton), the maximum
turn-off time (Toff) and the minimum delay between the
instant the switches stop conducting and the instant they
can be reclosed (Trec). In Fig. 2, the voltages and currents
have been expressed as a function of the rms line-to-line
voltage (E) and the rms line current (I);the delays are
expressed as a fraction of the basic ac period (TI. These
parameters, as well as the cost of the various circuits,
must be considered when evaluating each configuration.
It is very difficult to establish the relative cost of the
different configurations as the most economical solution
will differ from application to application. However, the
following points must be taken into consideration:
-Number and tvDe of semiconductors: Thyristors are more
expensive than diodes. In addition, each thyristor requires
a gate amplifier and a zero-crossing detector.
-Semiconductor ratinas: The cost of semiconductors
increases with their voltage and current ratings, consequently specific designs must balance the number and
type of semiconductors against their voltage and current
ratings. For instance, the two-switch configurations
require only four semiconductor devices, however these
devices must be capable of sustaining significantly higher
voltages. Alternatively, single-phase configurations
W33AN and W33NA require six thyristors but have the
lowest thyristor withstand voltage. In order t o simplify the
comparison each circuit was assigned a capacity factor,
Cf, equal to the inverse of the product of the peak semiconductor voltage and the rms semiconductor current.
Single phase configurations have the best capacity factor.
-ResDonse time: The turn-on, turn-off and reclosing times
vary with the different configurations.
-CaDacitor banks: Three-phase capacitors are normally sold
as complete three-terminal units. Several configurations
require individual capacitors which may add to the cost of
the capacitor bank.
rms line-tn-line
voltage
1991
Fig. 4
E,
=,
E
sin( w t t
e)
SINGLE-PHASE ANALYSIS
Fig. 4 illustrates the equivalent circuit of a singlephase switch. This simple circuit will be used to establish
the basic equations and calculate the transient conditions.
In this circuit, R and L represent the source and circuit
impedances, C the capacitor t o be switched on at t = 0
and precharged a t Eco. The expression of the instantaneous current takes t w o different forms depending on the
circuit damping.
I f R > 2 J L / C , the c i r c u i t i s overdand
i(t)
If R
2 JL/C,
i ( t 1 = I,
(1)
(2)
Em
l R 2 + (XL
= Arctg t(XL
XCl2
Xc) / R 3
E,
- Es(t)
= E, sin(wt + 8)
-=
E, s i n 8
E,
dt
where: , E
,
is the initial voltage across the capacitor.
Then, for the overdamped case:
E, s i n 8 -Eco
I, w cos(&*)
I, (X+6) sin(&))
A=
ZAL
B = -
2 X
2 h
E, s i n 8
2 X L
I, w cos(B-@)
I,
2 X
( 1 - 6 ) sin(@-#)
2 X
D =
sin(&
Wr
E,
I, w cos(8-i)
Or
I,
R sin(&*)
2 L
Wr
-200
'
10
15
20
Time (ms)
0.4n ,
c = 480~~
L=
.I~O~H
E~, = 120 v, e = 30"
1992
the three capacitor voltages (Eca, Ecb, Ecc) and the three
current waveforms (la, Ib, IC)
along with the control signal.
The switches are installed in lines A and B.
c21
100
e
r
-40
10
Time (ms)
10
Time (ms)
Fig. : 7 Transient response, two capacitors in parallel; a ) optimal switching instant b ) random
switching instant ( RS = R = 0.40, L = ~ O L I HLs
, = 150~1H.C1 = C2 = 480~1F.
ES = 12OV
1993
= 13OpF,
C =
480pF,
1994
151 Alain Roux and al., "Condensateurs commutes par
thyristors", Revue Generale d'electricite, No. 6, June
1988, pp. 2 4 to 27.
161 Michael Hausler and al., "Amorcage e t protection
contre les surtensions des soupapes a thyristors pour
compensateurs statiques", Revue Brown Boveri, No. 4,
1987, pp. 206 to 212.
171 IEEE Std 18-1980,"Standard for Shunt Power Caoaci..a
+, r n
-Job-
GUV OLlVlER
(S'71-M'81SM'84) was born in Montreal,
QC. Canada in 1 9 5 2 . He
received B.Sc.A. and M.Sc.A.
degrees in electrical engineering
from the Ecole Polytechnique de
Montreal in 1 9 7 5 and 1977,
respectively, and a Ph. D. in
Power Electronics from Concordia University, Montreal, in
1982. In, 1981 he joined the
Department of Electrical and
Computer Engineering of the
Ecole Polytechnique de Montreal, where he is currently a
Professor. His research interests include large converters, variable speed drives and
transformers. Dr. Olivier is a registered Professional
Engineer in the Province of Quebec.
lmad MOUGHARBEL was born in
Beirut, Lebanon, in 1953. He
received a diploma of Electrical
Engineering f r o m t h e Ecole
Centrale de Lyon, France, in
1977 and a Doctorat d'ingenieur
from
the
Universite
d'Aix-Marseille in 1980. His
doctorate research work was
done in the Power Transistor
Development Department of
Thomson CSF. In 1982, he
joined the Department of Electrical Engineering of the Lebanese
University, Beirut. From 1987 to
1 9 9 0 he was also a Dart time
lecturer at the American University of Beirut. In '1991, he
joined the Department of Electrical and Computer Engineering of the Ecole Polytechnique de Montreal as a research
associate.
Gordon DOBSON-MACK (M'91)
w a s born i n Victoria, British
Columbia in 1964. He received a
B. Sc. in Electrical Engineering
from Queen's University, Kingston, Ontario, in 1986. Following
t w o years of studies in France and
i in Kingston, he began a Masters
program at the Ecole Polytechnique de Montreal. In May 1990, he
obtained a M. Ing. in Power Electronics. In September 1990, he
joined B.C. Hydro, Vancouver
where he is currently a Graduate
Engineer Trainee. Mr. DobsonMack is a registered Engineer in
Training in the Province of British Columbia.