STD2NC40-1

N-CHANNEL 400V - 4.7 - 1.5A IPAK

PowerMesh II MOSFET
TYPE
STD2NC40-1

VDSS

RDS(on)

ID

400V

<5.5

1.5A

TYPICAL RDS(on) = 4.7

EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED

DESCRIPTION
The PowerMESH II is the evolution of the first
generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.

3
2
1

IPAK
(SUFFIX-1)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
SWITH MODE LOW POWER SUPPLIES
(SMPS)
CFL

ABSOLUTE MAXIMUM RATINGS

Symbol
VDS
VDGR
VGS

Parameter

Value

Unit

Drain-source Voltage (VGS = 0)

400

Drain-gate Voltage (RGS = 20 k)

400

Gate- source Voltage

30

ID

Drain Current (continuos) at TC = 25C

1.5

ID

Drain Current (continuos) at TC = 100C

0.95

IDM ()
PTOT

Drain Current (pulsed)

Total Dissipation at TC = 25C

30

Derating Factor

0.24

W/C

dv/dt

Peak Diode Recovery voltage slope

3.5

V/ns

Tstg

Storage Temperature

60 to 150

150

Tj

Max. Operating Junction Temperature

()Pulse width limited by safe operating area

(1)ISD 1.5A, di/dt 100A/s, VDD V (BR)DSS, Tj TJMAX.

May 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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STD2NC40-1
THERMAL DATA
Rthj-case

Thermal Resistance Junction-case Max

4.16

C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

100

C/W

Thermal Resistance Case-sink Typ

1.5

C/W

Maximum Lead Temperature For Soldering Purpose

275

Rthc-sink
Tl

AVALANCHE CHARACTERISTICS
Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

1.5

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 C, ID = IAR, VDD = 50 V)

125

mJ

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Drain-source
Breakdown Voltage

ID = 250 A, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (V GS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 C

50

IGSS

Gate-body Leakage
Current (VDS = 0)

VGS = 30V

100

nA

V(BR)DSS

400

ON (1)
Symbol

Parameter

Test Conditions

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250A

R DS(on)

Static Drain-source On
Resistance

VGS = 10V, ID = 0.7 A

ID(on)

On State Drain Current

VDS > ID(on) x RDS(on)max,

VGS = 10V

Min.

Typ.

Max.

Unit

4.7

5.5

1.5

DYNAMIC
Symbol
gfs (1)

2/8

Parameter
Forward Transconductance

C iss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer
Capacitance

Test Conditions
VDS > ID(on) x RDS(on)max,
ID =0.7A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

Max.

Unit

1.1

108

pF

22.5

pF

0.4

pF

STD2NC40-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr

Parameter
Turn-on Delay Time
Rise Time

Test Conditions

Min.

VDD = 200V, I D = 0.7A

RG = 4.7 VGS = 10V
(see test circuit, Figure 3)
VDD = 320V, ID = 1.5A,
VGS = 10V

Typ.

Max.

Unit

7.5

ns

12

ns

Qg

Total Gate Charge

Qgs

Gate-Source Charge

2.1

nC

Q gd

Gate-Drain Charge

2.4

nC

6.1

8.2

nC

SWITCHING OFF
Symbol
tr(Voff)

Parameter
Off-voltage Rise Time

Test Condit ions

Min.

VDD = 320V, ID = 1.5A,

R G = 4.7, VGS = 10V
(see test circuit, Figure 5)

Typ.

Max.

Unit

20

ns

tf

Fall Time

27

ns

tc

Cross-over Time

29

ns

SOURCE DRAIN DIODE

Symbol
ISD

Parameter

Test Conditions

Min.

Typ.

Source-drain Current

ISDM (1)

Source-drain Current (pulsed)

VSD (2)

Forward On Voltage

ISD = 1.5A, VGS = 0

trr

Reverse Recovery Time

ISD = 1.5A, di/dt = 100A/s,

VDD = 100V, T j = 150C
(see test circuit, Figure 5)

Qrr
IRRM

Max.

Unit

1.5

1.5

180

ns

Reverse Recovery Charge

625

nC

Reverse Recovery Current

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Safe Operating Area

Thermal Impedence

3/8

STD2NC40-1
Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

4/8

STD2NC40-1
Normalized Gate Threshold Voltage vs
Temperature

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/8

STD2NC40-1
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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STD2NC40-1

TO-251 (IPAK) MECHANICAL DATA

mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

2.2

2.4

0.086

A1

0.9

1.1

0.035

0.043

A3

0.7

1.3

0.027

0.051

0.64

0.9

0.025

0.031

B2

5.2

5.4

0.204

B3

0.094

0.212

0.85

B5

0.033

0.3

0.012

B6

0.95

0.037

0.45

0.6

0.017

0.023

C2

0.48

0.6

0.019

0.023

6.2

0.236

0.244

6.4

6.6

0.252

0.260

4.4

4.6

0.173

0.181

15.9

16.3

0.626

0.641

9.4

0.354

0.370

L1

0.8

1.2

0.031

L2

0.8

0.047

0.031

0.039

A1

C2

A3

B3

=
=

B2

B5

D
B6

L2

L1

0068771-E

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STD2NC40-1

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