PD - 91495A

IRL540N
HEXFET Power MOSFET
l
l
l
l
l
l

Logic-Level Gate Drive

Advanced Process Technology
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Fully Avalanche Rated

VDSS = 100V
RDS(on) = 0.044

ID = 36A

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.

TO-220AB

Absolute Maximum Ratings

ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Parameter

Max.

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew

36
26
120
140
0.91
16
310
18
14
5.0
-55 to + 175

Units
A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

0.50

1.1

62

C/W

5/13/98

IRL540N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

V(BR)DSS/TJ

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient

Qg
Qgs
Qgd
td(on)
tr
td(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
100

1.0
14

Typ.

0.11

11
81
39
62

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)
gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

1800
350
170

V(BR)DSS

IGSS

Max. Units
Conditions

V
V GS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.044
VGS = 10V, ID = 18A
0.053

VGS = 5.0V, ID = 18A

0.063
VGS = 4.0V, ID = 15A
2.0
V
VDS = V GS, ID = 250A

S
V DS = 25V, ID = 18A
25
VDS = 100V, VGS = 0V
A
250
VDS = 80V, VGS = 0V, TJ = 150C
100
VGS = 16V
nA
-100
VGS = -16V
74
ID = 18A
9.4
nC
VDS = 5.0V
38
VGS = 5.0V, See Fig. 6 and 13

VDD = 50V

ID = 18A
ns

RG = 5.0, VGS = 5.0V

RD = 2.7, See Fig. 10

Between lead,

nH
6mm (0.25in.)
G
from package

and center of die contact

VGS = 0V

pF
VDS = 25V

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD
trr
Qrr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
36

showing the
A
G
integral reverse
120
p-n junction diode.
S
1.3
V
TJ = 25C, IS = 18A, VGS = 0V
190 290
ns
TJ = 25C, IF = 18A
1.1 1.7
C di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )
Starting TJ = 25C, L = 1.9mH
RG = 25, IAS = 18A. (See Figure 12)
.

ISD 18A, di/dt 180A/s, VDD V(BR)DSS,

TJ 175C

Pulse width 300s; duty cycle 2%

IRL540N
1000

1000

VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V

100

10

2.5V

20s PULSE WIDTH

T J = 25C

1
0.1

VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V

TOP

ID , Drain-to-Source Current (A)

ID , Drain-to-Source Current (A)

TOP

10

100

10

2.5V

20s PULSE WIDTH

T J = 175C

100

0.1

V D S , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

3.0

R D S ( o n ) , Drain-to-Source On Resistance
(Normalized)

I D , Drain-to-Source Current (A)

1000

TJ = 25C
TJ = 175C

10

V D S = 50V
20s PULSE WIDTH

V G S , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

100

V D S , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

10

10

I D = 30A

2.5

2.0

1.5

1.0

0.5

V G S = 10V

0.0
-60

-40

-20

20

40

60

80

100 120 140 160 180

T J , Junction Temperature (C)

Fig 4. Normalized On-Resistance

Vs. Temperature

IRL540N
3000

15

V G S , Gate-to-Source Voltage (V)

V G S = 0V,
f = 1MHz
C iss = C gs+ C gd
, C SHORTED
ds
C rss = C gd
C oss = C ds+ C gd

C, Capacitance (pF)

C iss
2000

C oss

1000

C rss

A
1

10

I D = 18A
V D S = 80V
V D S = 50V
V D S = 20V

12

FOR TEST CIRCUIT

SEE FIGURE 13

100

V D S , Drain-to-Source Voltage (V)

40

60

80

A
100

Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

1000

OPERATION IN THIS AREA LIMITED

BY RD S ( o n )

I D , Drain Current (A)

I S D , Reverse Drain Current (A)

20

100

TJ = 175C

T J = 25C
10

100
10s

100s
10
1ms

VG S = 0V

1
0.4

0.6

0.8

1.0

1.2

1.4

1.6

V S D , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

1.8

T C = 25C
T J = 175C
Single Pulse

1
1

10ms

A
10

100

V D S , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

1000

IRL540N
40

RD

VDS

I D , Drain Current (A)

VGS
30

RG

20

Pulse Width 1 s
Duty Factor 0.1 %

D.U.T.
+

-VDD

5.0V

Fig 10a. Switching Time Test Circuit

10

VDS
90%
0
25

50

75

100

125

150

175

TC , Case Temperature ( C)
10%
VGS

Fig 9. Maximum Drain Current Vs.

Case Temperature

td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC )

10

1
D = 0.50
0.20
P DM

0.10
0.1

0.01
0.00001

0.05
0.02
0.01

t1
t2

SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

VD S

D .U .T

RG

IA S
10V
tp

D R IV E R

+
V
- DD

0.0 1

Fig 12a. Unclamped Inductive Test Circuit

800

TOP
BOTTOM

ID
7.3A
13A
18A

600

400

200

E AS ,

1 5V

Single Pulse Avalanche Energy (mJ)

IRL540N

0
25

50

V (B R )D SS

75

100

125

150

Starting T J , Junction Temperature (C)

tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG

12V

.2F
.3F

5.0 V
QGS

D.U.T.

QGD

+
V
- DS

VGS

VG

3mA

Charge

Fig 13a. Basic Gate Charge Waveform

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

175

IRL540N
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

D=

Period

P.W.

+
-

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

ISD

IRL540N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)

10 .54 (.4 15)

10 .29 (.4 05)

3 .7 8 (.149 )
3 .5 4 (.139 )
-A -

-B 4.69 ( .18 5 )
4.20 ( .16 5 )

1 .32 (.05 2)
1 .22 (.04 8)

6.47 (.25 5)
6.10 (.24 0)

4
1 5.24 (.60 0)
1 4.84 (.58 4)

1.15 (.04 5)
M IN
1

1 4.09 (.55 5)
1 3.47 (.53 0)

4.06 (.16 0)
3.55 (.14 0)

3X
3X

L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN

1 .4 0 (.0 55 )
1 .1 5 (.0 45 )

0.93 (.03 7)
0.69 (.02 7)

0 .3 6 (.01 4)

3X
M

B A M

2.54 (.10 0)

0.55 (.02 2)
0.46 (.01 8)

2 .92 (.11 5)
2 .64 (.10 4)

2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H

3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

Part Marking Information

TO-220AB
E XEAXMAPML PE L:E TH
IS ISIS ISA NA NIR FIR1 F1
01010
: TH
W ITH
A SASSESMEBML BY L Y
W IT H
L OLTO C
T OCDOED E9 B 91M
B1M

A A

IN TE
R NRANTAIOTIO
N ANL A L
IN TE
R ERCETIFIE
C TIFRIE R
IR FIR1 F0 10 1 0
L OLGOOG O
9 2 49 62 4 6
9B 9B 1 M1 M
A SASSESMEBML BY L Y
L OT
L O T C OCDOED E

P APRATR N
T UNMUBMEBRE R

D ADTE
A TEC OCDOED E
(Y Y(YWYW
W )W )
Y YY Y
= Y
= EYAERA R
WW
W W= W
= EWEEKE K

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Data and specifications subject to change without notice.
5/98