See

discussions, stats, and author profiles for this publication at: http://www.researchgate.net/publication/228888918

20W continuous wave reliable operation of

980nm broad-area single emitter diode lasers
with an aperture of 96m
ARTICLE in PROC SPIE FEBRUARY 2009
DOI: 10.1117/12.807263

CITATIONS

DOWNLOADS

VIEWS

18

320

248

13 AUTHORS, INCLUDING:
U. Zeimer

Peter Ressel

Ferdinand-Braun-Institut

Ferdinand-Braun-Institut

151 PUBLICATIONS 818 CITATIONS

120 PUBLICATIONS 652 CITATIONS

SEE PROFILE

SEE PROFILE

Hans Wenzel

Gtz Erbert

Ferdinand-Braun-Institut

Ferdinand-Braun-Institut

318 PUBLICATIONS 2,403 CITATIONS

361 PUBLICATIONS 2,376 CITATIONS

SEE PROFILE

SEE PROFILE

Available from: P. Crump

Retrieved on: 17 June 2015

20W continuous wave reliable operation of 980nm broad-area single

emitter diode lasers with an aperture of 96m
P. Crump*, G. Blume, K. Paschke, R. Staske, A. Pietrzak, U. Zeimer, S. Einfeldt, A. Ginolas,
F. Bugge, K. Husler, P. Ressel, H. Wenzel, and G. Erbert
Ferdinand-Braun-Institut fr Hchstfrequenztechnik,
Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
ABSTRACT
High power broad area diode lasers provide the optical energy for all high performance solid state and fiber laser
systems. The maximum achievable power density from such systems is limited at source by the performance of the diode
lasers. A crucial metric is the reliable continuous wave optical output power from a single broad area laser diode,
typically for stripe widths in the 90-100 m range, which is especially important for users relying on fibered multi-mode
pumps. We present the results of a study investigating the reliable power limits of such 980nm sources. We find that
96m stripe single emitters lasers at 20C operate under continuous wave power of 20W per emitter for over 4000 hours
(to date) without failure, with 60m stripe devices operating reliably at 10W per stripe. Maximum power testing under
10Hz, 200s QCW drive conditions shows that 96m stripes reach 30W and 60m stripes 21W per emitter, significantly
above the reliable operation point. Results are also presented on step-stress-studies, where the current is step-wise
increased until failure is observed, in order to clarify the remaining reliability limits. Finally, we detail the barriers to
increased peak power and discuss how these can be overcome.
Keywords: diode lasers, high optical power, limitations and failure mechanisms, reliability

1. INTRODUCTION
High power diode lasers are increasingly the tool of choice for industrial laser applications, enabled by their high
reliability at high power levels [1]. The requirements for diode laser performance vary by application, but can be
categorized in terms of beam quality (i.e. the angular profile and modal purity of the optical emission) and optical power,
together typically collectively termed brightness. Cutting a deep, narrow hole in a steel plate requires high optical
powers and a narrow, well-focused beam. In contrast, joining large sheets of polymer together requires low optical
powers and has relatively lenient requirements for beam profile. The requirements for common industrial applications
are summarized in Figure 1, widely used and reproduced from Reference [1], where the beam parameter product, BPP, is
the width of the overall beam radius multiplied by the propagation angle for the laser source (a 980nm source with ideal
single mode Gaussian beam profile would have a value of BPP = 0.312 mm-mRad, for reference.)
As Figure 1 shows, diode lasers cannot be directly used for many applications, limited both by their maximum reliable
power and by their BPP values. Naturally, diode lasers are also widely used to pump other media, such as YAG crystals
or fiber lasers, which integrate the power from many diode lasers and deliver it in a high quality beam. However, here
also, the diode lasers limit the maximum achievable brightness: i.e. pump brightness limits increased system brightness.
Two main technical approaches are currently being followed to increase the diode laser pump brightness. First, the
output from many devices is integrated into a single optical fiber, using many different innovative schemes see Refs
[2-5] for some recent examples. The second approach is to increase the beam quality and output power of the diode
lasers themselves the approach followed here. We concentrate on 980nm broad area diode lasers with stripe widths in
the 90-100m range, important commercially as pumps for Erbium- or Ytterbium-doped fiber lasers. Such sources are
commercially available at the time of writing with reliable single emitter power levels in the 8-10W range see Refs
[6-8]. Recent research work on 910-990nm sources has shown that peak power levels from such 90-100m stripe

paul.crump@fbh-berlin.de

Tel: +49.30.6392.3291

www.fbh-berlin.de

High-Power Diode Laser Technology and Applications VII, edited by Mark S. Zediker,
Proc. of SPIE Vol. 7198, 719814 2009 SPIE CCC code: 0277-786X/09/$18 doi: 10.1117/12.807263

Proc. of SPIE Vol. 7198 719814-1

structures in the 20-25W range are achievable [9-12], with stable long term testing without failure reported at powers as
high as 15 W [9].
0

1.000

Lim,t for present

S) stems

2w0

I'I

Trans
org

trc weld

d.

Melting,

100

fleaning

Met. sheet

wedn. -

0
F#4 focusing
optics

Printing
the. - marking

-O

M .sh -t
cut ing

I.,

0.1

II)

100

10

A1

Theoretical limit for

optimized systems

Marking

cJ

iri
I.'--

10

1000

10.000

Laser power (W)

Figure 1: Output power and beam quality requirements for high power lasers for various industrial applications [1].

In the following sections we further investigate super-large optical cavity designs with passivated facets and robust
AuSn-based packaging that have previously demonstrated reliable 15W operation [9]. We study how much further they
can be driven without failure and detail what limits their peak and peak reliable output power. The maximum (rollover)
power is found to be not limited by the temperature sensitivity of the material, instead it is limited by carrier escape
driven by high current density operation, similar to effects seen at 1100nm [13]. We find that single emitters can be
driven for extended periods up to their maximum (rollover) powers without failure. When samples do fail, a mix of
failure modes is seen, with package-related failure, failure at internal defects and facet failure all observed. Extended
tests show that over 4000 hours of continuous operation at powers up to 20W is achievable.

2. DEVICE STRUCTURE AND PERFORMANCE PARAMETERS

The AlGaAs based layer structure used in this study was grown by metal-organic vapor phase epitaxy (MOVPE). In
order to reduce series resistance and leakage current the aluminum content was carefully optimized. A super-large
optical cavity waveguide design with 2.4m thick wave-guide core was selected to deliver narrow vertical far field. The
strain-compensated InGaAs/GaAsP double quantum well acting as active region was placed asymmetrically into the
waveguide to minimize excess resistance and optical absorption from the p-side waveguide. A typical vertical far field
intensity profile is shown in Figure 2. The full width at half maximum of the vertical far-field intensity of 22.5 (40 with
95% power content), designed to allow simplified coupling schemes to optical fibers. The small equivalent vertical spotsize (d/) of 0.95m reduces the power density on the output facets (low facet load).
1.0

Intensity

0.8
0.6

22.5

0.4
0.2
0.0
-60

-40

-20

20

40

60

Vertical Far field []

Figure 2: Vertical far field profile of an example 96 m stripe broad area laser

Proc. of SPIE Vol. 7198 719814-2

The devices were processed using standard broad area laser diode technology. Current confinement was achieved by SiN
insulation. Cavity length analysis of reference devices allows us to determine that the internal efficiency is 91% and the
internal losses are about 1 cm-1. After processing, the wafers were cleaved into bars with a laser cavity length, L, of
L = 4 mm. The front and rear facets were low and high reflection coated (2% and 95%, respectively). The coating of the
facets included a facet passivation process as described by Ressel et al. [14].
For the experimental characterization in CW operation, single emitters were mounted epitaxial-side down using -phase
Au-Sn [15] on expansion-matched Cu-diamond submounts which were subsequently soldered with Pb-Sn onto
conduction cooled packages (CCP) with standard dimensions of 25 x 25 x 7.6 mm3. The substrate-side was contacted by
wire bonding. Typical measured power-current characteristics for a range of operation temperatures are shown in
Figure 3 (the temperature of the mounting block below the CCP was controlled). An output power of more than 20 W in
continuous wave operation at a temperature of 15C was obtained, limited by thermal roll over. A maximum wall-plug
efficiency of 55 % at 15C (54% at 25C) was reached at an output power of 6 W. The thermal resistance was
determined to be 2.1K/W by measuring the shift in wavelength.

voltage U / V

2.0

25

1.0

20

0.8

1.5

15

0.6

1.0

10

0.4

0.5

0.2

0.0

10

15
20
current I / A

25

0.0

intensity / a.u.

T=15C
T=20C
T=25C

opt. output power P / W

2.5

wall plug eficiency C

Measurements of the lateral beam properties are also shown in Figure 3. The lateral near field has a width of 96m and
retains a top hat profile up to 18W. About 96% of the output power is within a lateral far field angle of only 17.

-20 -10 0
10
angle /

20

-50
0
50
position x / m

Figure 3: Performance characteristics of a typical 4mm cavity length, 96m stripe, 980nm broad area single emitter mounted
junction down on a CCP: (left) Light-current characteristics (right) lateral near field and far field profiles at an
operating condition of 18W at 25C.

3. MEASUREMENTS OF MAXIMUM ACHIEVABLE POWER

3.1 Measurements on passively cooled CCP heat-sink
In order to determine the maximum achievable output power of our broad area laser designs, we tested several devices
with different geometry. The lasers discussed here had a total length of 4 mm and stripe widths of 60m, 96m and
200m. As in section 2, the lasers were mounted epi-side down on copper-diamond heat spreaders (sub mounts), which
were subsequently soldered on CCP. The lasers were then tested at different CCP temperatures under continuous wave
(CW) and quasi-continuous wave (QCW) conditions, where the devices were driven with 200s pulses with a repetition
rate of 10Hz (0.2% duty cycle). Under QCW test conditions, only the semiconductor and its local substrate experience
current heating [16], compared to CW conditions where the whole assembly reaches thermal equilibrium. All
measurements were performed in a low-pressure controlled atmosphere chamber, so that the devices could be cooled
below 0C without condensation. Temperature in all cases was controlled via a sensor on the heat sink.
In Figure 4, we present the power-current characteristics of the BA lasers with different stripe widths. 200 m stripe
lasers were measured close to room temperature, and reached maximum powers of 57W (failure limited) at 15C for
QCW testing and 29W (thermally limited) at 25C for CW testing. 96 m stripe lasers reach 27W QCW and 21.5W CW
at 5C, both failure limited. 60m stripe lasers were tested at 0C, reaching 21W under QCW conditions and 16.4W
CW, limited by the presence of a kink in the light current curve, followed by device failure. The QCW peak power test

Proc. of SPIE Vol. 7198 719814-3

of the 60m stripe device corresponds to a linear power density of 350mW/m. Figure 4 summarizes the peak power
achieved as a function of stripe width. It is interesting to note that the difference between the peak QCW and CW powers
diverges as the stripe width increases. 200m stripe devices require very high current ~ 80A to reach maximum power
and this leads to larger overall total heating, so that the attributes of the whole assembly play a larger role.
30

20

CW 25C

20
CW -5C

10

Optical Power (W)

Optical Power (W)

Optical Power (W)

40

60

980nm BA laser
60m x 4mm

QCW -5C
10Hz, 200s

QCW 15C
10Hz, 200s

20

25

980nm BA laser
96m x 4mm

980nm BA laser
200m x 4mm

QCW

Max. Optical Power (W)

60

QCW 0C
10Hz, 200s

15

10
CW 0C

15C

50

40

30

CW

-5C

25C

0C

20

-5C

0C

10

20

40

60

Current (A)

80

10

20

30

40

Current (A)

10

20

30

Current (A)

50

100

150

200

250

Stripe Width (m)

Figure 4: (Left) QCW and CW power-current characteristics for broad area lasers with different stripe widths at reduced
temperature (Right) Summary of maximum optical power achieved for different stripe width, with measurement
temperature noted.

3.2 Failure Analysis as Function of Emitted Power Density

All of the failures observed in the maximum power testing were inspected using cathode-luminescence techniques [17].
Two devices failed at the output facet, two failed internally and one failed due to packaging related effects. Example
images are shown in Figure 6.

Facet

internal defect

Figure 6: Example CL pictures from devices that failed under peak power testing.

Following techniques in Reference [18], the local optical density at the facet, pCOMD 1, achieved at peak power, Pmax, can
be calculated using equation (1), where d is the quantum well thickness, the confinement factor, W the stripe width and
R the front facet reflectivity.

d
1 R
Pmax = W
pCOMD

1+ R

(1)

The results of such a calculation are shown in Table 1 and compared to the observed failure mode. Maximum facet
power densities as high as 38 MW/cm2 are demonstrated, but no clear correlation is observed between power density and
failure mode.
1

The abbreviation COMD corresponds to catastrophic optical mirror damage, where material breakdown (failure) occurs at the
facets, as used in Reference [18]. For the studies presented here, this is not ideal terminology as the maximum power is not in every
case limited by COMD. Indeed, the highest pCOMD achieved in this study occurs for a sample where the facets do not fail.

Proc. of SPIE Vol. 7198 719814-4

CW
Stripe
(m)
60
96
200

d/ (m)
0.95
0.95
0.95

Pmax
(W)
16.4
21.5
29

R
2%
2%
2%

pcomd
2

(MW/cm )
30
25
16

Failure
Package
Facet
Internal

QCW (200 s 10 Hz)

pcomd
Pmax
2
(W) (MW/cm )
Failure
21
38
Internal
27
31
Facet
57
31
Facet

Table 1: Overview of the maximum achieved power density and failure mode as a function of stripe width.

4. DIAGNOSIS OF LIMITS TO MAXIMUM POWER

In order to better understand the physical mechanism limiting the maximum power, detailed measurements of the
temperature sensitivity were performed. Using the (known) thermal resistance, the quantum well temperature at the
rollover point was estimated to be in the 100 125C range. The light-current characteristics of an example device were
measured as a function of heat-sink temperature to 125C under short pulse (500ns 1kHz) test conditions, with power
measured using an integrating sphere together with an InGaAs fast photo-detector 2. Such testing minimizes the current
heating, so that the average quantum well temperature is the same as the heat-sink temperature. The extracted
temperature dependence of slope and threshold current are shown in Figure 7, normalized by their values at 15C.
Threshold increases by a factor of ~ 2.5, and slope reduces ~ 15% from 15C to 125C.
Typically, the temperature dependence of threshold, Ith, and slope, S, is parameterized as a function of temperature, T,
using the simple empirical expressions with Ith(T) = Iref exp (T/T0) and S(T) = Sref exp (-T/T1). The curves do not follow
precisely such an exponential form, and if a fit is attempted, the extracted values of T0 and T1 can vary strongly with the
temperature range selected. We find values for T1 of 383K for 15-55C and 324K for 15-125C3. T0 in the same range is
found to be 115 K and 118 K, respectively.
4.5

1.00

4.0
0.75

3.0
2.5

0.50

2.0

S / S (15C)

Ith / I th (15C)

3.5

1.5
1.0

Measured threshold
Measured slope
Polynomial fit

0.5

0.25

0.00

0.0
0

25

50

75

100

125

Temperature (C)
Figure 7: Temperature dependence of slope and threshold under 500 ns 1 kHz short pulse test conditions.

The temperature dependence of slope and threshold can be combined with the known values of thermal resistance and a
maximum achievable (rollover) power estimated, following the techniques in [19]. This was performed for the 96m
stripe width device, seen earlier in Figure 4. (As the conventional T0 and T1 fit process does not correctly reproduce the
measured behavior, the temperature dependence of slope and threshold were included here through a simple empirical
2

As the temperature of the laser diode is increased, its wavelength increases. The responsivity of the InGaAs photodiode improves for
longer wavelengths, and this effect must be removed through a careful calibration process, here performed by referencing
measurements at all temperatures to a (wavelength insensitive) calibrated thermoelectric detector.
3
If the slope were not corrected for the wavelength sensitivity of the detector, we would have obtained for T1 of 840K for 15-55C
and 575K for 15-125C

Proc. of SPIE Vol. 7198 719814-5

polynomial fit, indicated in Figure 7.) As Figure 8 shows, the extrapolated maximum achievable power is significantly
higher than the measured power, indicating that additional effects are occurring in the structure to limit peak power.
250

Experiment
Theoretical Prediction

25

200

20
150
15
100
10
50

Quantum well temperature (C)

Optical Output Power (W)

30

Predicted quantum well temperature

10

20

30

40

50

0
60

Drive Current (A)

Figure 8: Comparison of predicted maximum achievable power (dashed line) with measured (solid line) light current curve
for a 96 m stripe 4 mm resonator length device mounted junction down on CCP.

Intensity (arb. units)

When 1100 nm broad area lasers are tested to very high current densities under short pulse (300ns) condition, the light
current curves roll over, even though minimal heating occurs [13]. Simulations predicted this arises from carrier escape
and recombination in the waveguide, which only occurs at high current density [13]. Measurements of the emitted
spontaneous emission confirmed that carriers do accumulate in the waveguide, as predicted [13]. Following these same
techniques, the spontaneous emission was collected as a function of current under continuous wave conditions from an
example device (96m stripe 4mm cavity length) mounted junction down on CCP. The spontaneous emission was
collected using a bare, cleaved fiber in the plane of the quantum well, offset and angled at > 45 (outside the far field
profile) so that no lasing light entered the fiber. Emission was observed at wavelengths corresponding to the direct
bandgap of the waveguide layers, as illustrated in Figure 10. The emitted intensity was minimal until the device starts to
roll over; then the spontaneous emission grows rapidly. This observation implies the peak power under CW conditions is
also limited by additional current driven carrier escape from the quantum well, in the same way as observed for 1100 nm
structures [13].

23A

20A
18A

15A

10A
5A

0
700

720

740

760

780

Wavelength (nm)
Figure 9: Spontaneous emission under CW test conditions as a function of current at wavelengths corresponding to the direct
band gap of the waveguide layers.

Proc. of SPIE Vol. 7198 719814-6

5. EXTENDED COD TESTING STEP STRESS ANALYSIS

The failure rate, F(t), of high power broad area lasers is typically accelerated in terms of temperature and current via the
equation, F(t) exp (-Ea / kBT) Im , where Ea is an activation energy for thermally driven effects, T the temperature of the
quantum well in Kelvin (junction) and m an acceleration factor for current driven effects (the impact of optical power, P,
can also be separately accounted for using an additional Pn factor) [20,21]. Typical published values derived from multicell reliability testing for 980nm broad area laser material are m = 5.5 and Ea = 0.43eV [21] for sudden failures, showing
that current (or power) acceleration is the most rapid effect.
To obtain rapid information about the maximum reliable power of a given structure, a step stress test can be performed,
where the current (or temperature) is increased whilst holding temperature (or current) constant. Here, we have
performed current step stress testing as this is typically the strongest acceler ator of device failure. A typical 48 hour step
length was used, then the current was increased. By lowering the temperature of the heat sink, the device wavelength and
hence the quantum well temperature could be held constant. The samples were operated in a sealed chamber at reduced
pressure levels to prevent condensation.
Figure 10 shows two examples of such step stress tests for 60m stripe width devices mounted junction down on CCP,
analogous to those tested earlier. For drive currents above 17A, the temperature (wavelength) of the quantum well could
no longer be held at its original value (limited by the heat extraction capability of the heat sink) and further steps include
a small temperature increase. The devices were found to operate without degradation up their thermal roll over power. In
the final stage of the step stress test, these devices were operated very close to the onset of an optical kink (visible in the
light current curves shown in Figure 4). Here, slow degradation of the output power could be observed at a rate (fraction
per hour) of 310-4 h-1 (device A) and 610-3 h-1 (device B) although small changes are likely to have been exaggerated
due to the proximity of the kink. If the m = 5.5 current acceleration applies to our structures, the final step would
correspond to > 16 x faster failure rate. Device A for example operated at 20A for 166 hours without failure (after which
it was removed from test), which would correspond to ~ 2800 hours of operation at 10W 25C.

17

Step Stress Test

60m x 4mm, 980nm BA-laser
constant current
device A

Optical output power (W)

16
15
14

20A 0C
19A 0C

17A 0C

13
12

15A 12C

11
10

12A 25C

Optical output power (W)

17

Step-Stress-Test
16 60m x 4mm, 980nm BA-laser
constant current
15 device B
14

22A -3C
20A 0C

17A -3C

13
15A 4C

12

13A 10C

11
10

11A 15C

9
8

8
0

50

100

150

200

250

300

350

400

450

time (hours)

50

100

150

200

time (hours)

Figure 11: Step stress test (optical power versus stress time) of two 60m x 4mm devices (A & B).

6. EXTENDED TEST AT HIGH POWER

Although low temperature step stress testing can reveal the maximum achievable power from a specific structure, real
users require information on the lifetime for operation over extended periods heat sink temperatures close to room
temperature. 60m stripe and 96m stripe samples were placed on such extended test at 21C to confirm high power
density operation is sustainable for extended periods. The results are shown in Figure 12. For 25A operation current,
corresponding to 18-20W output power, we find 96m stripe devices can operate for more than 4000 hours without
failure. One sample failed at 4200 hours for a packaging related defect, one sample is still operating without failure. One
60m stripe devices has operated without failure to date for over 3500 hours at 10W, a further sample has to date
reached 2000 hours without failure.

Proc. of SPIE Vol. 7198 719814-7

Optical output power (W)

20

96 m Stripe

15

60 m Stripe

10

1000

2000

3000

4000

5000

Time (hours)
Figure 12: Extended CW test results at 21C for two 60m stripe devices at 10W and two 96m stripe devices close to
20W. One 60m stripe device has been in operation to date for just 2000 hours, marked with an arrow.

7. CONCLUSIONS
We demonstrate it is possible for 980 nm broad area lasers to reach a peak power density of 30 MW/cm2 under CW and
38 MW/cm2 under QCW conditions respectively. The peak power is limited by failure at either an internal defect, at the
facet or due to packaging effects. Thermal rollover under CW conditions is found to occur earlier than would be
expected from simple extrapolations based on T0, T1 and thermal resistance values. Enhanced spontaneous emission
from the waveguide is observed when the device rolls over, consistent with the presence of additional leakage current
paths, as seen previously in 1100 nm devices. Step stress testing shows these structures can be operated in continuous
wave for extended periods up to their rollover powers without failure. Extended testing at 25C shows that 96m devices
can operate close to 20W for > 4000 hours and 60m devices at 10W for > 3000 hours without failure. Such devices
have substantially improved brightness over current commercially available structures and are good candidates for use in
industrial laser systems.

REFERENCES
[1]
[2]
[3]

[4]
[5]

[6]

Brauch, U., Loosen, P. and Opower, H. , High Power Diode Lasers for Direct Applications in High Power Diode
Lasers, Ed. R. Diehl, Topics Appl. Phys. 78, 303-367 (2000).
Fiebig, C., Eppich, B., Pittroff. W. and Erbert, G. , Stable and compact mounting scheme for > 1kW QCW diode
laser stacks at 940 nm, Proc. SPIE 6876, 69760J (2008).
Knig, H., Grnninger, G., Brick, P., Reufer, M., Bugge, F., Erbert, G., Stoiber, M., Biesenbach, J., Lorenzen, D.,
Hennig, P., and Strau, U. , "Brilliant high power laser bars for industrial applications" Proc. SPIE 6876, 687616
(2008).
Krause, V., Koesters, A., Knig, H. and Strauss, U. , Brilliant high-power diode lasers based on broad area lasers,
Proc SPIE 6876, 697615 (2008).
Leisher, P., Price, K., Bashar, S., Bao, L., Huang, H., Wang, J., Wise, D., Zhang, S., Das, S., DeFranza, M., Hodges,
A., Trifan, U., Balsley, D., Dong, W., Grimshaw, M., DeVito, M., Bell, J., Martinsen, R., Farmer, F., Crump, P. and
Patterson, S. , "Mode Control for High Performance Laser Diode Sources" Proc. SPIE 6952, 69520C (2008)
Bookham,
http://www.bookham.com/documents/datasheets_hpld/BMU10A-9xx-01-2_R_r2.0-200810.pdf,
Internet site, (2009).

Proc. of SPIE Vol. 7198 719814-8

[7]
[8]
[9]

[10]
[11]

[12]

[13]
[14]

[15]

[16]
[17]
[18]
[19]
[20]
[21]

JDSU, http://www.jdsu.com/products/commercial-lasers/products/diode-lasers-and-direct-diode-subsystems.html,
Internet site, (2009).
IPG Photonics, http://www.ipgphotonics.com/Collateral/Documents/English-US/PLD-9%20Data%20Sheet.pdf.,
Internet site, (2009).
Paschke, K., Einfeldt, S., Ginolas, A., Husler, K., Ressel, P., Sumpf, B., Wenzel, H. and Erbert. G. , "15-W reliable
operation of 96-m aperture broad-area diode lasers emitting at 980 nm," Conference Digest CLEO/QELS USA,
CMN4 (2008).
Lichtenstein, N., Boucart, J., Button, C., Krejci, M., Manz, Y., Mueller, J., Pawlik, S., Sverdlov, B., Valk, B. and
Weiss, S. , "Recent developments for BAR and BASE: setting the trends," Proc. SPIE 6876, 68760C (2008).
Taniguchi, H., Ishii, H., Minato, R., Ohki, Y., Namegaya, Y., and Kasukawa, A. , 25-W 915-nm Lasers With
Window Structure Fabricated by Impurity-Free Vacancy Disordering (IFVD), IEEE Journal of Selected Topics in
Quantum Electronics. 13(5), 1176-1179 (2007).
Petrescu-Prahova, I., Modak, P., Goutain, E., Bambrick, D., Silan, D., Riordan, J., Moritz, T. and Marsh. J.H. ,
253mW/m maximum power density from 9xx nm epitaxial laser structures with d/ greater than 1 m, IEEE
21st International Semiconductor Laser Conference Digest, 135136 (2008).
Pietrzak, A., Crump, P., Staske, R., Wenzel, H., Erbert. G. and Trnkle. G. , "Peak power from 60-m Broad Area
Single Emitter Limited to 50-W by Carrier Escape," Conference Digest CLEO/QELS USA, CMN2 (2008).
Ressel, P., Erbert, G., Zeimer, U., Hausler, K., Beister, G., Sumpf, B., Klehr, A., and Trnkle, G. , Novel
passivation process for the mirror facets of high-power semiconductor diode lasers, IEEE Photonics Technol. Lett.
17(5), 962964 (2005).
Pittroff, W., Erbert, G., Beister, G., Bugge, F., Klein, A., Knauer, A., Maege, J., Ressel, P., Sebastian, J., Staske,R.
and Trnkle, G. , "Mounting of High Power Laser Diodes on Boron Nitride Heat Sinks Using an Optimized Au/Sn
Metallurgy," IEEE Trans. on Advanced Packaging 24(4), 434-441 (2001).
Liu, X., Hu, M.H., Caneau, C.G., Bhat, R. and Zah, C-E. , Thermal Management Strategies for High Power
Semiconductor Pump Lasers, IEEE Trans Comp. and Packaging Tech. 29(2), 268-276 (2006).
Pey1, K.L., Chim, W.K., Phang, J. C. H. and Chan, D. S. H. , Optoelectronic material analysis and device failure
analysis using SEM cathodoluminescence, Microelectronics and Reliability 34(7), 1193-1202 (1994).
Botez, D., Design considerations and analytical approximations for high continuous-wave power, broad-waveguide
diode lasers. Appl. Phys. Lett. 74(21), 3102-3104 (1999).
Erbert, G., Brwollf, A., Sebastian, J. and Tomm, J. , High-Power Broad-Area Diode Lasers and Laser Bars in
High Power Diode Lasers, Ed. R. Diehl, Topics Appl. Phys. 78, 303-367 (2000).
Husler, K., Zeimer, U., Sumpf, B., Erbert, G. and Trnkle, G. ,Degradation model analysis of laser diodes, J.
Mater. Sci.: Mater. Electron., 9534-8 (2008).
Rossin, V., Strite, T., Zucker, E. and Ju, T-H. , AlGaInAs broad-area lasers exhibit outstanding reliability,
Compound Semiconductor Magazine, 43-46 (2003).

Proc. of SPIE Vol. 7198 719814-9