Microwave Photonics For

Space Systems
Cours 2
Anglique Rissons
Angelique.rissons@isae.fr

I.

Introduction: - definition, Chronicle, applications

II.

Microwave Photonic Space Application & Space Qualification

III. Microwave // Optical technology: (reception,

amplification, oscillation)
III-1 Optical Amplifier
III-2 Laser Diode
III-3 receiver

I.

Photonic transmission of microwave signal (optoelectronics terminals optical Fiber-budject link)

!

13/07/15

ISAE 2014

optolectronique
lectronique

optolectronique
Photonique

Diodes laser
LED
Modulateur

13/07/15

lectronique

Photodiode
Phototransistor

Fibre Op7que
Amplicateur
bre dope
Mul7plexeur..
2011
ISAE

Transmiter

Repeater or Op7cal
amplier

Photodetector

Fiber Op7c

Data

AO

Photodiode

Laser diode

RLoad

Direct Modula7on
Photodiode

Laser diode

Electro-op7c
modulator

RLoad

External Modula7on
13/07/15

ISAE 2011

I POL = I 0
6

Signal modula7on

CW
I

Laser diode

P0

Pout(t)
Op7cal modulator

I.

Introduction: - definition, Chronicle, applications

II.

Microwave Photonic Space Application & Space Qualification

III. Microwave // Optical technology: (reception,

amplification, oscillation)
III-1 Optical Amplifier
III-2 Laser Diode
III-3 receiver

I.

Photonic transmission of microwave signal (optoelectronics terminals optical Fiber-budject link)

!

13/07/15

ISAE 2014

In 70th, the Multimode fiber optic utilization involved limitation due to

the modal scattering caused by the various propagation velocity of
the FO modes.
A periodically signal regeneration is required, implying a light
signal detection, a complete electronic processing including a signal
resynchronization and conditioning => The regenerated information is
modulated by a new optical carrier..
Single mode FO deployment, no scattering, only the spectral
attenuation contribute to the limitation of the transmission link length

Regeneration non required but only linear amplification is

required.

Long distance optical link

70th Corning research and technology

works :
Attenuation decrease (from 100dB up
to 0.2 dB per km)
repeater per 100kms, utilization of
1550nm band

10

Optoelectronic repeater
Photodiode

Conditioning
electronic
amplifier

Emitter
Modulator

Bias

Weakness: Electronic amplifier bitrate limited to

500Mbit/s

All optical amplification (Electrons-photons transduction suppressed)

Bit rate increase

11

Optical amplifier advantage

Optical amplification: simple and cost effectiveless than

optoelectronic repeater-regenerater.
NB: the complexity and cost increase considerably with the bitrate/
channel.

+ The optical amplifier allows simultaneously and without

distortion the Multiplexing of 100 wavelength.

The optical amplification deployment was achieved during the

90th in the transmission systems for telecom networks (land and
submarine)
12

Two kind of amplifier:

- Laser effect amplifier
- Raman Effect Amplifier
Laser effect amplifier:
The active region is constituted by a materials allowing the stimulated emission and place into the
core of a single mode waveguide allowing a low consumption and minimizing the losses.

13

The amplifier have to:

- answer to the wavelength constraints
- have a minimized spectral linewidth (30nm, 3600 GHz)
- have a high gain (20 30 dB) to satisfy the factor of merit

Two kind of laser effect amplifier:

- Rare Earth Doped Fiber Amplifier, i.g. EDFA=Erbium Doped FA,
YDFA= Ytterbium DFA, PrDFA, PraseodymiumDFA
- Semiconductor Optical Amplifier SOA

14

High spectral bandwidth:

40nm!!

15

High Bandwidth (40Gbit/s)

Amplification of several wavelength simultaneously:

Wavelength Division Multiplexing (WDM) over the amplification band of the Erbium
ion into the silica lattice (1530nm 1560 nm)

16

>

Propagation according to Oz Axis

dP
= g(! )! P " P(z) = P(0)e gz
dz

>

if P << Psat

Gain coefficient

g(! ) =

g0 ( P p )
2

1+ (! ! ! 0 ) ! 22 + P Psat

! 2 dipolar relaxation time " 1ps

g0 function of PP , kind and concentration of dopant, core diameter, FO length (L)

>

Amplifier Gain
G (! ) =

P(L) g(! )L
=e
P(0)

! if ! " ! 0 G (! ) #> g (! )
! G ( L ) max for L $ 20 ! 40m

17

>

Bande passante

12

# Ln2 &
(
B = !! g " %
%$ Ln (G0 2) ('

18

GO = e g0 L
1
avec
!! g =
"# 2

31/05/2013

VCSEL Day 2013, EPFL, Lausanne, Switzerland

19

3 sources dinterac7on avec mission spontane amplie (ASE)

Signal-ASE
ASE-ASE
RIN-ASE
En pra7que :



NEDFA= NS-ASE + NASE-ASE + NRIN-ASE (N= variance du signal photodtect)

En pra7que:
2 mesures de la puissance de bruit avec (PN2) / sans EDFA (PN1)
Z est limpdance de lamplicateur lectrique du photodtecteur,







































B b ande d e mesure RF
N
Facteur de Bruit:
Zin impdance dentre

Z Photoddecteur

IS courant Photodtect
en dB = Noise Figure

Ordres de grandeur
Pp=10mW; p=0.98m; L=30m NF=3.2dB
Pp=25mW; p=1.48m; L=60m NF=4dB
31/05/2013

VCSEL Day 2013, EPFL, Lausanne, Switzerland

20

I.

Introduction: - definition, Chronicle, applications

II. Microwave Photonic Space Application & Space Qualification

III. Microwave // Optical technology: (reception, amplification,
oscillation)
IV. Photonic transmission of microwave signal (optoelectronics
terminals optical Fiber-budject link)
!

13/07/15

ISAE 2014

21

I.

Introduc7on

II. Principe du laser / Rappel de Physique

I.
Microwave // Op7cal technology:
(recep7on, amplica7on, oscilla7on)
III. Focus sur les diodes laser

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ISAE 2013

22

Un photon incident sur un systme ltat excit peut induire une

transition librant son nergie sous forme d un autre photon identique en
phase et en amplitude au premier:

c est lmission stimule

possibilit damplification de la lumire !!

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ISAE 2013

23

Grande cohrence spa4ale:

Focalisa7on sur un diamtre =
direc7vit caractrise par la divergence = / w0
exemple: w0 =1cm, =2.10-5 rad et = 633nm

Faible largeur de raie: excita7on slec7ve des niveaux dnergie.
exemple = 10 Hz, Longueur de cohrence L= 30000km

Puissance ou nergie leve de quelques mW op7que 1,8 mgajoule (LMJ, Bordeaux)

Produc7on d impulsion ultracourte, pouvant ageindre 4,5fs (dans l IR)
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ISAE 2013

24

Un miroir
totalement
rflchissant

"Cavit linaire"

Un miroir
partiellement
rflchissant

Un dispositif de pompage

Amplificateur
Un milieu actif

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ISAE 2013

Faisceau
de sortie

25

pompage

Lmission spontane amorce lmission s4mule

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ISAE 2013

26

miroir
totalement
rflchissant

amplification

miroir
partiellement
rflchissant

pompage

Faisceau
laser de
sortie

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ISAE 2013

27

III
Le milieu ac7f est plac dans une cavit op7que
oscilla7on des photons amplica7on.
Pompage = ralisa7on de linversion de popula7on de la
zone ac7ve.
Pompage lectrique = polarisa7on de la diode

Amplicateur boucle de rtroac7on

Fonc7on de transfert:

S ( )
( )
=
E ( ) 1 ( ) ( )

Condi7ons doscilla7on: =1
: amplicateur gain de la zone ac7ve
: ltre slec7f cavit
28

1958 -1960 Aigrain (France), Nishizawa(Japon), Bosov(URSS) , ide du Laser

Semiconducteur
1962

Nathan, Hall, Quist, Holonyak, ralisa4on de la premire diode laser

1970 Mise au point des bres op7ques naissance de l optronique

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ISAE 2013

29

13/07/15

Laser Semiconducteur = Moi7 du march

ISAE 2013

30

 Les Lasers gaz (CO2, HeNe, Ar.) sont trs performants:

Largeur spectrale ultra ne : qq Hz vs kHz pour les diodes lasers

Puissance op7que leve mais consomma7on lectrique trs leve

Appropris aux applica7ons industrielles mais ne peuvent pas tre embarqus dans lespace
cause du vide spa7al


Les lasers sont u7liss pour dautre applica7ons telles que lobserva7on de la Terre, en imagerie,
astronomie, mtrologie .
Exemple: LIDAR, Gyromtre, .

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31

I.
II.

Introduc7on

Principe du laser / Rappel de Physique

III. Focus sur les diodes laser

IV. Quelques no7ons de Scurit Oculaire

31/05/2013

VCSEL Day 2013, EPFL, Lausanne, Switzerland

32

Ses par4cularits:
- conus sur la base des technologies de llectronique
milieu ac7f = semiconducteur.
- la longueur donde mise dpend du matriau:
Par exemple: InP/InGaAs: 1,4 -1,6 m
GaAs/AlGaAs: 0.8-1m
-puissance de quelques mW
- faible consomma7on dnergie lectrique
- faible dimensions de quelques mm quelques m grce la
technologie de la microelectronique.

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ISAE 2013

33

Laser eect Amplica7on

Non radia7ve
recombina7on by
recombinant center

34

Auger Effect =
Electron-hole
recombination
energy transmitted
to an electron or a
hole as kinetic
energy

Deux catgories de SC :

direct bandgap SC, III-V compound

bandgap indirect SC, Si and Ge.

Indirect Bandgap :
k(Ecmin ) k(Evmax )

Direct Bandgap :
k(Ecmin ) = k(Evmax )

Wave vector change k radiative transition

Wave vector conservation k Direct

intermediary level

recombination
Transition Probability

Low transition probability

SC LASER DIRECT BAND GAP (generally III_V compound)

35

Matriaux

AlGaAs/GaAs

Applications

Laser de pompe
Lecture de CD et DVD
680 ! 890 nm
Liaison fibre courte distance (
850nm)

InGaAs/GaAs

950 ! 1100
nm

InGaAs/InP

1,0 ! 1,7!m

AlGaInP/GaAs

13/07/15

Longueur
donde

Source basse puissance

Laser de pompe pour EDFA
Liaison fibre Tlcom (1,3 et 1,55
!m)

Liaisons Fibreplastique sur trs

courtes distances.
600 ! 700 nm
Applications dans le visible.
Fonctionnement haute temprature.

ZnCdSSe

450 ! 550 nm Possibilit dAffichage couleur

AlGaInN

200 !640 nm

Extension du fonctionnement au
domaine de lUV.

ISAE 2013

36

Dispersion compense et minima dattnuation spectrale aux longueurs

Dondes Tlcoms, c est dire 1.3m et 1.55m.
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ISAE 2013

37

Direntes structures intgra7on plus ou moins aise, encapsula7on adapte

aux applica7ons

DFB (distributed
Feedback) en
bo7er bugery

Le VCSEL (diode laser cavit

ver7cale megant par la
surface), la plus pe7te diode
laser des7n
loptolectronique intgre

Diode laser pigtailed: pour

connexion directe la bre op7que

Diode laser = laser le mieux adapt aux contraintes du spa7al (Cours 2)

13/07/15

ISAE 2013

38

III
Le milieu ac7f est plac dans une cavit op7que
oscilla7on des photons amplica7on.
Pompage = ralisa7on de linversion de popula7on de la
zone ac7ve.
Pompage lectrique = polarisa7on de la diode

Amplicateur boucle de rtroac7on

Fonc7on de transfert:

S ( )
( )
=
E ( ) 1 ( ) ( )

Condi7ons doscilla7on: =1
: amplicateur gain de la zone ac7ve
: ltre slec7f cavit
39

 amplification de l onde lumineuse

lorsque la longueur donde est associe
un gain positif.

augmentation du gain avec la densit de

porteurs

quand la densit de porteurs augmente,

le maximum de gain se dplace vers les
nergies croissantes donc les longueurs
d onde croissantes

Entretenir lmission s4mule diode laser...

40

Gain modal dans le plan transverse

(x,y): g,
Pertes internes: i
Longueur de cavit L= n./2
Coecient de rexion des miroirs
R1 et R2

Le champ E se propageant dans la cavit

E ( z, t ) = E0 U ( x, y ) ei(t z )

~ 2 n i

=
+ (xy g i )
o est la constante de propagation complexe telle que

2
x,y facteur de confinement transverse et n est l indice effectif de rfraction.
Aprs un aller retour dans la cavit, la composante longitudinale du champ E devient:
~

E ( z + 2 L) = E0 U ( x, y) e i z r1r2 e i 2 L
41

Pour que londe optique samplifie, il faut que le gain dans la rgion active puisse augmenter en
compensant les pertes de la cavit et des miroirs.
le champ aprs un aller-retour dans la cavit reste identique lui mme, do la condition de
seuil:

r1r 2 e

2 n

2L

e( gth i )2 L = 1

En sparant la par7e relle et la par7e imaginaire on ob7ent le gain au seuil :

g th = i +

1 1
ln
2 L R

Avec R = r1 r2
et la condi7on de rsonance de la cavit:

= m pertes des
miroirs

2 n 2 L
= 0
sin

On en dduit les frquences de rsonance de la cavit correspondant aux modes longitudinaux:

42

m = m

c
2n L

Lindice varie avec la longueur donde (dispersion) et la densit de porteurs, tel que pour
une longueur d onde = 0+ et une densit de porteurs N=N0+N, lindice devient:

n( , n ) = n(0 ,N 0 ) +
On en dduit lindice de groupe:

n
n
+
N

n
ng = n +

do lintervalle spectral libre, qui est lespacement entre 2 modes successifs:

ISL =

43

c
2 ng L

Gain si nombre de porteurs N si le courant de pompe (courant

de polarisation/bias current) I
Si Gain

=> nombre de photons S

Puissance mis en en fonc7on du courant de polarisa7on (P= (I) ou L-I curve)

3 regions:
Electroluminescence,
Opera7on
Satura7on

44

 Zone ac7ve/ac7ve layer= Jonc7on PN

Mirrors = Semiconductor clived facet.
Amplica7on layer= deple7on region

45

46

PN Homojonc7on :
High losses
weak eciency due to the low carrier density close to the junc7on (high diusion)
index varia7on induced by the carrier diusion transverse mul7ple mode,
Op7cal power degrada7on
High electrical consump7on
High turn-on delay
No integra7on
high temperature dependance

III-V technology advance imply in LD techno improvement

Actif layer material gap< adjacent

materials (cladding).

Carrier Diffusion length

limitation

Confinement of the
recombination region

Bias current decrease and

efficiency increase
47

Molecular beam epitaxy

48

 eciency, threshold current, and linewidth

49

Distributed feedback laser (DFB): singlemode

(longitudinal) laser diode

Wavelength selectivity of the grating Bragg Reflector

B : Bragg wavelength

: reflecteur period
ne: effective index

Laser Beam with One output mode

50

DFB: Butterfly package

51

low foot print, high integration level

Verticale emission perpendicular to the surface
Cylindrical Symetry
Low threshold current and low electrical consumption
Serial Fabrication, test on wafer during the growth

52

Parameter

LED

Edge EmmiHer Laser

(EEL)

VCSEL

Wavelength

(nm)

480-1300

650-1550

500-1600

Bandwidth

B (GHz)

<1

10-15

5-10

Threshold Current

Ith (mA)

>10

<3

Bias Current@ Popt = 1 mW

Ibias (mA)

100

20

>20

Maximal op7cal Power

Pmax(mW)

<10

10-100

<40

Direct Voltage

VD(Volt)

1,8

Serial Resistance

Rs(()

25

20-100

Parasi7c capacitance

Cp(pF)

>50

10

30

Eciency

(W/A)

<0,1

0,5-0,8

0,2-0,8

Mul7ple mode

singlemode

Mul7ple and single mode

>40

40

10

Beam shape

circular

ellip7c

circular

Fibre type injec7on

Plas7c silice

silice

Plas7c silice

>50

9-62,5

Emission mode
Divergence

Fibre core diameter

()

DFO(m)

53

III. Equa7ons dvolu7on de la diode laser

carrier

Photons

54

dN
= Ggen Rrec
dt

dS
= Est + Esp S p
dt

III.I.3. Laser Diode: Rate equa7ons

Carrier
Ggen: carrier generation into active layer
Rrec: recombinations

dN i I
=
N ( A + B N + C N ) G S
dt
q
i = internal quantum efficiency
A = non radiative recombination by recombinant center (1
carrier)
B = bimolecular recombination (2 carriers)
C = Auger effect (3 carriers)
carrier lifetime into active layer :

n
G = modal gain
55

= A+ BN +CN2

III.I.3. Laser Diode: Rate equa7ons

Photons
dS
S
= B N +GS
dt
s
: spontaneous emission coefficient
: confinement factor
s : photon lifetime
vg : group velocity

56

S : photonic losses

= v g ( i + m ) = v g .g th

57

III.I.3. Laser Diode: Rate equa7ons

Modal Gain : N S Dependance
G=g0G(N)(S)
G ( N ) = ln

N
N tr

G( N ) = (N Ntr )

Si S, G

gain compression

N N tr
G( N , S ) = g0
1+ S

( S ) =
g o = v gr

a
Vact

1
1+ S

III Rate equa7ons, steady state resolu7on

Steady state condition:

58

dN
dS
= 0 et
=0
dt
dt

III. Laser Diode: Rate equa7ons, steady state resolu7on

0 , 0

I Is and S = 0
(Ns = Threshold carrier number and Is = threshold current)

N=

n i I
q

if N Ns

I >2 Is and S 0

59

60

III Rate equa7ons, steady state

resolu7on
Threshold determination
Above threshold(I Is ), N Ns

Current/carrier relationship

i I
q

Ns

=0

Photons/Current for I>Is:

III.Rate equa7ons, steady state resolu7on

Optical Power vs current relationship for I>Is
Current /Photon number relationship:

and

61

III.Rate equa7ons, dynamic behavior

N S
(through G)

S N

I(t) N

Modula7on rpa77on du
phnomne

resonance
62

III. Diode laser modula7on pe7t signal

I POL = I 0
63

III. Laser Diode: small signal modula7on

I, N, S: small signal linearization

and

64

III. small signal modula7on

65

III. small signal modula7on

66

III. Small signal modula7on/ Laser diode transfer func7on

-> frequencial domain
pulsation frquency f=/2
For each X close to X0 Xm<< X0

67

III. Laser diode transfer func7on

Cramer Rule

68

III. Laser diode transfer func7on

III. Laser DiodeTransfer func7on

Resonance pulsation:
Damping coefficient:
Second order low pass system (Techbychev)

70

III. Laser DiodeTransfer func7on

R 2 =

g 0S

g0
i ( I I s )
q

If I

Pente de 40 dB/dcade

1
( / R )2
2

Frquence propre

P 2 = R 2 1

Frquence de
coupure -3dB

3dB 2 = P 2 + P 4 + R 4

III. Largeur de raie dune diode laser

Fluctuation des porteurs fluctuation du gain + fluctuation de l indice de

la zone active
fluctuation de la longueur optique de la cavit
dcalage en frquence du mode rsonant = modulation en frquence
de la diode laser
La largeur de raie est donc dfinie par l quation suivante

H est le facteur d largissement spectral ou facteur

de Henry.

III. Largeur de raie dune diode laser

La largeur de raie est un paramtre

trs important pour lu4lisa4on des
diodes laser. Il est source de
dgrada4on du signal dans les
communica4ons op4ques.
Pour que le signal soit le plus pur
possible, il faut que la largeur de
raie soit la plus ne possible et le
facteur de Henry le plus faible.

73

III. Bruit Rela7f dintensit/Rela7ve Intensity Noise = RIN

RIN = quan4ca4on des uctua4ons de photons dans une diode laser sur lmission
totale.

Fonc4ons de Langevin
dN i I N
=
G P + FN (t )
dt
q e
dP
P
= N w B N + G P + FP (t )
dt
p

FN, FP , fonctions de Langevin = fluctuations de Photons et dlectrons

(les forces de Langevin des lectrons et des photons donnent une
reprsentation mathmatique du bruit dmission optique).

Proprits :

FP = FN = 0
74

III. Mesure de RIN

RIN at 3Ith
-120
0

10

-125

RIN (dB/Hz)

-130
-135
-140
-145
-150
-155

Frequency (GHz)
1300 nm 3Ith

1500 nm 3Ith

75

III. Laser Diode: large signal modula7on

SC Laser diode direct modulation

76

Above threshold pulsed response

III. Laser Diode: large signal modula7on/transient response

Turn on delay, jitter and relaxation frequency

Turn on delay

77

a) With prebias
b) Without prebias

III. Laser Diode: large signal modula7on

Eye Diagram

Main parameters of digital optical link:

- Signal to noise ratio(SNR)
- Jitter
- Bit Error Rate (BER)
Major contribution: Laser vs other link component
78

III. Laser Diode: large signal modula7on/transient response

Turn on delai determination
@ t=0, current switch from Ioff up to Ion
2 modes

79

1) Stochastic mode:

2) Deterministic mode:

tc: electron delai to reach threshold.

td: photon response

III. Laser Diode: large signal modula7on/transient response

1) Stochastic regime Ioff<Is N<Ns

dN !i I N
=
!
dt
q "n
@ t=0: Switch Ion to Ioff N variation from Noff up to Ns

By Integrating on tc we obtain:

tc = ! n ln

I on ! I off
I on ! I s

80

III. Laser Diode: large signal modula7on/transient response

2) Deterministic Regime: Photon response ton
ton = td tc
Above electron threshold, delai of the photon to
reach the laser oscillation regime (Son)

Hypothesis = Non-linearity neglected

Major Stimulated emission Spontaneous Emission 0
Without oscillation gain Compression 0

dS
S
= g0 (N ! N tr )S !
dt
!s
81

III. Laser Diode: large signal modula7on/transient response

g0 (N s ! N tr ) =

1
!s

dS
dt

N(t) integration on ton, Son not reached

dN
dt

N (t )

dS
dt

!S $
(td ' tc )2
on
&& = g0!i (I on ' I s )
ln ##
2
" Soff %
82

III. Laser Diode: large signal modula7on/transient response

Approximation: Relation entre ton and R
'1
! S $( g
+
ton = 2ln ## on &&* 0 !i ( I on ' I s ),
" Soff %) q

= ! R2

!S $
2ln ## on &&
" Soff %
ton =
!R

83

K. Petermann, Laser diode Modula7on and Noise, KTK Scien7c Publisher

84