Miniaturized Microstrip Lowpass Filter Using A New Coupled

Crescent Defected Ground Structure (DGS)

First Author#1, A. Boutejdar2, Third Author#3
2
Chair of Microwave and Communication Engineering University of Magdeburg
Universitätsplatz 02 39106 Magdeburg Germany

2
ahmed.boutejdar@ovgu.de
3
third.author@first-third.edu
*
Second Company

Abstract — This paper introduces a new compact DGS low pass g=0.6mm has r = 5mm, t=1mm and L=1.96mm. An RO4003
filter using crescent shape structure etched in the ground plane. dielectrc substrate of relative permittivity equals to 3.38 and
The filter response has improved dramatically by employing thickness 0.813mm is used. The micrstrip line on the upper
coupling of two DGS structures. Furthermore, the layer in Fig. 2 has a width of 1.9mm which guarantees a 50 Ω
transformation to BPF is also investigated. The proposed
configuration improved the LPF response by widening the
matching impedance. Due to the additional equivalent
rejection band while significantly reducing the size. The inductance which in turn increases the characteristic
behaviour of the filter has been investigated using HFSS as well impedance of the 50 Ω line, the line impedance becomes
as lumped element equivalent circuit model simulations using broader than that of the standard microstrip line [7-10].
parallel L-C resonator. The proposed filter has been optimized,
fabricated, and measured showing good agreement with the
simulated results.
t
I. INTRODUCTION
With the increasing demand for compact structure high
performance filters in a fast growing industry [1], numerous
researches is done to achieve these goals. The DGS techniques g L
now employed in microstrip filters provides such solution to
enhance the performance of filters while compacting the size
to meet nowadays increasing demands. The DGS can be
applied to different components such as lowpass and bandpass
filters [2-5]. The slots introduced at the bottom PEC layer
(DGS) mainly improve the transition sharpness and widens r
the rejection band. This is due to the fact that the waves
penetrating the structure are disturbed causing a delay with
respect to one another and therefore velocity varies between Fig. 1. Proposed single crescent DGS element.
them. This can also help in developing a more compact
structure without the need to implement a higher order filters
with the same performance. In this paper a new design for a
LPF is investigated. The filter has a cutoff frequency at 2.4
GHz. The filter performance has been improved by 50Ω-Line
introducting two coupled elements as a defected structure in
the ground plane. Furthermore, we have studied the effect of
several parameters on the filter performance such as the
coupling distance and the DGS area. Moreover, the
implementation of a simple technique to transform the LPF
Substrate
into BPF with Bandwidth is presented.
Metallic
II. PROPOSED DGS STRUCTURE Ground

Crescent DGS
The new proposed DGS structure which is etched on the
ground plane is shown in Fig. 1, which has overall dimensions
smaller than predecessor H-DGS [6]. The crescent shape
which looks like a semi circle connected to a slot with a width Fig. 2. 3-D view of the DGS resonator.
 An equivalent circuit model for the crescent DGS element Compensated capacitor
is shown in Fig. 3, which consists of simple L-C circuit [11-
13]. The single crescent DGS LPF has been simulated using 50Ω-Line
HFSS and the computed results were compered to that
generated using the L-C circuit model. Good agreement
between the equivalent circuit results and that of the simulated
crescent element is shown in Fig. 4. For the lumped elements
used in the equivalent circuit the capacitance (picofarads) and
the inductance (nanohenrys) values were computed as follows, Substrate
Metallic
5 fc 250 Ground
Cp = pF and Lp = nH
π(f − f ) C p (π f0 )
2 2 2
0 c
Coupled
Crescent DGS

where fc, is the cutoff frequency of the band reject response of

the DGS at 3 dB and f0, is the pole frequency [14]. Fig. 5. 3-D view of coupled crescent DGS LPF.

when compared to the H-DGS LPF [6] as shown in Fig. 5.

Z=50 Ohm Lp=485 nH Z=50 Ohm
Furthermore, the filter size reduces dramatically achieving
size saving of about 30 %, thus the total filter area is 0.45λg x
0.27λg with λg =58.3 mm. The simulation results of this new
LPF using Microwave Office and HFSS are shown in Fig. 7
which shows a comparison between circuit simulation and EM
simulations. The results show good agreement.
Cp=0.13 pF L=3.14 nH
Z=50 Ohm L=3.12 nH Z=50 Ohm
Fig. 3. Equivalent circuit of single DGS element.
0

-5
C=0.19 pF C=0.36 pF
-10
C=0.19 pF DGS

B
] -15
S11 S21 Compensated
d[
1 -20
fc capacitor
2
S
&
1 -25 EM SIMULATION
1
S f0 Fig. 6. Equivalent circuit of single DGS LPF.
EQUIVALENT CCT
-30
0
-35 EM-simulation
-5
Circuit model
-40 -10
0 1 2 3 4 5 6 7 8 9 10
Frequency[GHz] -15
-20
Fig. 4. Comparison between the S-parameters of the simulated
S11 & S21[dB]

crescent element and its equivalent circuit model. -25

-30
III. COUPLED CRESCENT DGS FILTER
-35
In this section we will be investigating the effect of etching
two crescent DGS structures on the ground plane of the filter
-40 S11 S21
as shown in Fig. 5. The equivalent circuit is shown in fig. 6. -45
The proposed DGS shape has smooth edges consequently less -50
losses, which enhances its performance especially in the -55
microwave range of frequencies where we are operating. 0 1 2 3 4 5 6 7 8
Frequency[GHz]
Coupled DGS filter shows a rejection band of about 3.5 GHz
for an attenuation level less than 15dB providing an increase Fig. 7. Comparison between EM-simulation and circuit
in the rejection band of about 50 % simulation results of the proposed filter structure.
IV. DISTRIBUTION OF ELECTRIC FIELD AT ATTENUATION POLE
(4.4GHZ) AND AT 1GHZ

The objective of this small study is to prove the dependence of

the equivalent circuit elements (capacitance and inductance)
on the surface current distribution. As shown in Fig. 8, Fig. 9
and Fig. 10.
Top

Region II

Bottom
Region I

DGS-resonator Fig. 10. Electric field distribution at resonance frequence

f0=4.4GHz
Fig.8. Two-dimensional view of the proposed LPF.

The structure is divided into two regions: region I, where the

electric field is highly concentrated in the gap, hence any
change in dimensions of the gap affects the effective
capacitance of the structure. In region II, the electric field
nearly vanishes [1-2]. It means that the length of the arcs not
affects the effective capacitance of the filter structure. The
current is distributed throughout the whole structure. the rejection band, and also the filter size as shown in
Therefore any change in the length of the arcs strongly affects Table I. Accordingly there must be a trade off to choose which
the magnetic field distribution and hence the surface current, performance and size wise that suits best the
which in turn leads to a change in the effective inductance of application.(SOME MORE THEORETICAL MUST BE
the structure. So it will be easily to guarantee, that the region I WRITTEN)
corresponds to capacitance and the region II corresponds to
inductance, thus the full structure corresponds to parallel LC-
resonator.

TABLE I
COUPLING DISTANCE VS. REJECTION BAND

Coupling Rejection Filter

distance(mm) band < size(mm2)
20dB(GHz)
3 3.6-5.8 23 x 16
4 3.6-5.9 25 x 16
5 3.6-8.1 26 x 16
Top 6 3.6-8.1 27 x 16
7 3.8-8.1 28 x 16

A. Effect of Changing the Crescent at 5mm Coupling

Distance
The Crescent radius controls the inductance of its
equivalent lumped circuit element model and so by increasing
Bottom
the radius the inductance increases which in turn decreases the
cutoff frequency. (SOME MORE THEORETICAL MUST BE
WRITTEN)
Fig. 9. Electric field distribution at f=1 GHz
 TABLE II
for 2.5 ≤ ε r = 3.38 ≤ 15.0
Crescent radius vs. rejection band & Cutoff frequency
0 .9 me
C even ⎛ ε r ⎞ ⎛s⎞ ⎛ pF ⎞
=⎜ ⎟ ⎜ ⎟ e ke ⎜ ⎟
Crescent Rejection fc (GHz) w ⎝ 9. 6 ⎠ ⎝ w⎠ ⎝ m ⎠
radius(mm) band <
0 .8 m
20dB(GHz) C odd ⎛ ε r ⎞ ⎛ s ⎞ o ko ⎛ pF ⎞
3 9-14 4.1 =⎜ ⎟ ⎜ ⎟ e ⎜ ⎟
4 5.4-7 3.19
w ⎝ 9 .6 ⎠ ⎝ w ⎠ ⎝ m ⎠
5 3.6-8.1 2.4 s ⎛w⎞
6 3.8-8.2 2.25 for 0.1 ≤ = 0.6 ≤ 1.0 & ⎜ ⎟ = η
w ⎝h⎠
⎛w⎞
V. THE TRANSFORMATION OF LPF TO BPF USING J-INVERTER- ⇒ m 0 = ⎜ ⎟[0.92 log η - 0.38]
⎝h⎠
METHOD
⇒ k 0 = [4.26 - 1.45logη ]
It is well known that the transmission characteristics of ⎡⎛ 1.565 ⎞ ⎤ ⎡ ⎛ 0.03 ⎞⎤
microstrip low-pass filters have a periodic behavior. The ⇒ m e = ⎢⎜⎜ 0.16 ⎟⎟ − 1.0⎥ & k e = ⎢1.97 − ⎜⎜ 1 ⎟⎟⎥
periodicity is approximately four times the cutoff frequency ⎣⎢⎝ η ⎠ ⎦⎥ ⎣⎢ ⎝ η ⎠⎦⎥
fc. This property of microstrip lowpass filters can be used to
carry out a new and simple transformation of LPF to BPF [15- ⎛C ⎞ ⎛ C odd C ⎞
⇒ C IO = ⎜ even ⎟ & C k = ⎜ − even ⎟
17]. Fig. 11 shows the 3-D schematic view of the new ⎝ 2.0 ⎠ ⎝ 2.0 2.0 ⎠
compact BPF. The proposed BPF has a discontinuity in the
feed microstrip line J-inverter as compared to continuous feed
line of the LPF. In this case, the transmission characteristics is In order to improve the BPF behaviors it will be necessary to
inverted, causing the structure to act as a bandpass filter with find the optimal distance between the both DGS resonators so
passband between fc and 3fc and a stop-bands in DC- and that the most electromagnetische energy can be optimally
[3fc - 4fc ] intervals. The bandpass filter is shown in Fig. 12 utilized. The loses will be minimised in pass-band then leads
together with its frequency response. to a good response. The coupling method and the coupling
matrix will be used in order to calculate the gap distance
Ck (p=0.2 λg)
Gap p (J-Inverter)

CIO CIO 50Ω-Line ⎛ c0 ⎞

λ g = ⎜⎜ 2π ⎟ (c0 ≈ 3.108 ms −1 )
⎝ ω c ε r ⎟⎠

Substrate
Metallic
Ground

Coupled
s Crescent DGS

Fig. 11. Three dimensional view of proposed band-pass

filter.

VI. THEORY

Fig. 2 shows the microstrip BPF using end-coupled λ/2-

microstrip resonators. equivalent circuit of the gap-microstrip
is shown in Fig. 2 and Fig. 3. The effect of the gap is
equivalent to π-shunt (CIO) and series (Ck) capacitances. The
remaining capacitances and inductances are obtained from
EM simulations of the single DGS element and the Figure 12: Simulated S-parameters for the proposed Crescent
optimization method. CIO and Ck are determined by: -DGS BPF.
 IV. CONCLUSIONS Transactions on Microwave Theory and Techniques, vol. 53, no. 9,
September 2005
[13] Adel B.Abdel-Rahman,Anand K. Verma, Ahmed Boutejdar and A.S.
A new crescent DGS design has been implemented and its Omar , Control of Bandstop Response of Hi-Lo Microstrip Low-Pass
equivalent circuit was developed. The crescent DGS when Filter Using Slot in Ground Plane.IEEE Transactions on microwave
employed using coupling method achieved very good results Theory and Techniques ,Vol. 52,No3,March 2004
in terms of rejection band of 3.5GHz and attenuation level less [14] D.Ahn, J. Park,C.Kim,Y.Qian, and T.Itoh,A design of the Lowpass
FilternUsing the Novel Microstrip Defected Ground Structure ,IEEE
than 15GHz as compared to predecessors and also size Trans. Microwave Theory Techn,Vol 49,pp86-93,Jan 2001.
reduction of about 30 % .To validate the results the coupled [15] Boutejdar, Ahmed; Omar, Abbas “Lowpass-to-bandpass
filter was fabricated and measured with Network analyzer and transformation using J-inverter and defected ground structure (DGS)-
showed good agreement with simulated results. In addition technique In: International Workshop on Microwave Filters“ ; 16 - 18
November 2009, CNES, Toulouse, France . - Toulouse, insges. 4 S.
some parametric studies were made to investigate the effect of Kongress: International Workshop on Microwave Filters; (Toulouse) :
coupling distance between Crescent DGS elements and also 2009.
the Crescent DGS area size on the filter performance. We [16] L. Garde, M. J. Yabar, and C. D. Rio, “Simple modeling of DGS to
have also studied the transformation of the LPF to BPF by design 1D-PBG low pass filter,” Microw. Opt Technol. Lett., vol. 37,
no. 3, pp. 228–232, May 2003.
employing the technique of J-inverter [17] Awida, Mohamed; Boutejdar, Ahmed; Safwat, Amr; El- Hennawy,
Hadia; Omar Abbas, “Multi-Bandpass filters using multi-armed open
loop resonators with direct feed”, In: 2007 IEEE MTT-S International
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916
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of spurious harmonics using multilayer technique and defected ground
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[2] A. Boutejdar; A. Batmanov; E. Burte; and Abbas Omar, “Design of a
New Bandpass Filter with Sharp Transition Band Using Multilayer-
Technique and U-Defected Ground Structure (DGS)” IET
Microwaves, Antennas & Propagation, Vol. 4, No. 03, pp. 377-384,
2010
[3] A.Boutejdar, A.Sherbini and A.S. Omar,A Novel Technique to
Transform a Fractal LPF to BPF using a Simple Combination of
Defected Ground Structure (DGS) and a Narrow Gap Capacitive, Proc.
APMC (Bangkok), 2007, pp. 2385-2388
[4] S. Amari, “Synthesis of Cross-Coupled Resonator Filters Using an
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 Notices
A.Boutejdar,A.Sherbini and A.S. Omar,A Novel Technique to Transform a Fractal
LPF to BPF using a Simple Combination of Defected Ground Structure (DGS) and a
Narrow Gap Capacitive, Proc. APMC (Bangkok), 2007, pp. 2385-2388.

>12GHz

1. The text(bleu) will be add

from me please controlled it
correct it .
-------------------------------------------
2. The text with red it is not
correct in my opinion please
control it and let me to hear 0

your opinion about it -5

------------------------------ -10

The left axe of the figure 4. will be S21

] -15 S11
corrected I don’t have the B
d[
1 -20
fc
2
simulation of the single element . S
&
1 -25 EM SIMULATION
Omar has simulated it and he can 1
S
EQUIVALENT CCT
f0
-30
easy to correct it
-35
legend
-40
0 1 2 3 4 5 6 7 8 9 10
Frequency[GHz]

Bad position

We must choose a good location

for the legend left under