SEMICONDUCTOR

DIODE THEORY

THEORY

P-N JUNCTION DIODE

The P-N junction diode is appeared in the year 1950. It is the
most essential and the basic building block of the electronic
device. The PN junction diode is a two terminal device, which is
formed when one side of the PN junction diode is made with ptype and doped with the N-type material. The PN-junction is the
root for semiconductor diodes. The various electronic
components like
BJTs,
JFETs, MOSFETs
(metaloxide
semiconductor FET), LEDs and analog or digital ICs all supports
semiconductor technology. The main function of the
semiconductor diode is, it facilitates the electrons to flow totally in
one direction across it. Finally, it acts as a rectifier. This article
gives a brief information about the PN junction diode, PN junction
diode in forward bias and reverse bias and the VI characteristics
of PN junction diode
When p-type and n-type semiconductor are joined together it
forms a p-n junction diode. The term diode means the two
electrodes.

SEMICONDUCTOR

DIODE THEORY

THEORY

The current will flow through diode if an external voltage is applied

to it at appropriate polarities.

Formation of depletion region:

The border where p-region and n-region meets is called as
junction.
n-type has large no .of electrons which tries to move on n-side
and combine with holes of p-side. Similarly, hole of n-side tries to
cross the junction and combine with electrons of p-side. This is
known As diffusion. When electron leaves p side it creates +ve
ion and on recombining with holes create ve in p-region. The
free charges (electrons and holes) disappears from the junction.
The region near the junction is depleted of free charges hence
called depletion layer. It is also known as space charge region. In
the state of equilibrium, the depletion region gets widened to such
extent that further crossing of electrons and holes are not
possible. The width of the depletion region is extremely small
about 0.5 to 1 micro meter. The wall of ions gets created due to
this whose p.d prevents further diffusion. This potential is known
as barrier potential. For silicon it is 0.7V.

Biasing of diode:
Biasing means applying voltage to a diode. If voltage is not
applied it become difficult to overcome barrier potential and hence
no current will flow. Therefore biasing is necessary. There are two
types of biasing1.forward 2.reverse

SEMICONDUCTOR

DIODE THEORY

THEORY

Forward biasing:
When +ve voltage of external source is connected to p-type and
ve to n-type it is called as forward biasing. fig.shows forward
biasing ckt.

When forward electrons from n-side and holes from p-side are
pushed towards junction. The depletion region decreases. Hence
barrier potential also decreases. When external voltage go
beyond barrier potential ,large no. of electron and holes crosses
the junction ,leading to the formation of large free ions which are
responsible for conducting electricity. Hence large current flows
through the diode. The magnitude of this current depends upon
applied voltage. Hence ,when p-n junc. Is forward biased it acts
as a closed switch and conducts heavily.

SEMICONDUCTOR

DIODE THEORY

THEORY

Reverse biasing:

When +ve is connected to n-type and ve is connected to ptype than it is said to be reverse biased. When diode reverse
biased , electrons and holes moves away from the junction. Due
to this, the width of the depletion region increases to large extent.
When external voltage is connected and if we apply such a high
voltage the diode may get damaged. Hence we need to maintain
voltage when diode is reverse biased. Hence no current flows
when diode is reverse biased. But in practice small amount of
current flows through it which is called as saturation current which
is in few nanometers.

SEMICONDUCTOR

DIODE THEORY

THEORY

V-I Characteristic of p-n Junction diode:

The V-I characteristic of diode are represented by graph of

voltage along x-axis and current along y-axis.
Zero external voltage source:
When the external voltage is 0, no current will flow through diode.
Hence the circuit current is 0.
When forward biased , till it reach the potential barrier ,which is
known as cut in voltage, the current doesnt flow ,then it increases
rapidly.
During reverse biasing, no current flow till the breakdown voltage
and than current at nanoscale flows through it.
5

SEMICONDUCTOR

DIODE THEORY

THEORY

Zener diode:

When a diode is reverse biased, potential barrier becomes high ,

which cannot be overcome by external voltage. If we do so diode
may damage. The width of the depletion region depends upon the
level of doping. If the diode is highly doped the width of the
depletion region is low and vice-versa. Hence, when an ordinary
diode is properly doped, we can apply reverse biased current ,so
that it should have sharp breakdown voltage is called as zener
diode. Thus, a zener diode is a reverse biased properly
doped(heavily doped) silicon diode. Which is always reverse
biased and operates in breakdown region where current is limited
only by both external resistance and power dissipation of diode.
Following points may be noted about zener diode:
1. When it is forward biased, it act as an ordinary diode.
2. It has a sharp breakdown voltage
3. Does immediately burnt like ordinary diode
4. When reverse voltage is greater than breakdown voltage, it
conducts and is said to be at ON state.

SEMICONDUCTOR

DIODE THEORY

THEORY

5. When reverse voltage is less than breakdown voltage than it is

at FF state.