Data Sheet: Silicon MMIC Amplifier

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BGA2003
Silicon MMIC amplifier
Product specification
Supersedes data of 1999 Jul 23
2010 Sep 13
NXP Semiconductors
BGA2003
FEATURES
PINNING
Low current
PIN
DESCRIPTION
Very high power gain
GND
Low noise figure
RF in
Integrated temperature compensated biasing
CTRL (bias current control)
Control pin for adjustment bias current
VS + RF out
Supply and RF output pin combined.

APPLICATIONS
CTRL
handbook, halfpage
RF front end
Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)
VS+RFout
BIAS
CIRCUIT
Low noise amplifiers

Satellite television tuners (SATV)
High frequency oscillators.
Top view
RFin
Marking code: A3*
* = - : made in Hong Kong

* = p : made in Hong Kong
* = t : made in Malaysia
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
GND
MAM427
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA

SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
4.5
IS
DC supply current
VVS-OUT = 2.5 V; ICTRL = 1 mA;

RF input AC coupled
11
mA
MSG
maximum stable gain
VVS-OUT = 2.5 V; f = 1800 MHz;

Tamb = 25 C
16
dB
NF
noise figure
VVS-OUT = 2.5 V; f = 1800 MHz; S = opt
1.8
dB
2010 Sep 13
NXP Semiconductors
BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VS
supply voltage
RF input AC coupled
VCTRL
voltage on control pin
IS
supply current (DC)
ICTRL
control current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
forced by DC voltage on RF input

or ICTRL
Ts 100 C
MIN.
MAX.
UNIT
4.5
30
mA
mA
135
mW
65
+150
150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
UNIT
350
K/W
CHARACTERISTICS
RF input AC coupled; Tj = 25 C; unless otherwise specified.
SYMBOL
IS
MSG
|s21|2
s12
NF
IP3(in)
PARAMETER
supply current
maximum stable gain
insertion power gain
isolation
noise figure
input intercept point; note 1
CONDITIONS
TYP.
MAX.
UNIT
VVS-OUT = 2.5 V; ICTRL = 0.4 mA
4.5
mA
VVS-OUT = 2.5 V; ICTRL = 1.0 mA
11
15
mA
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;

f = 900 MHz
24
dB

f = 1800 MHz
16
dB

f = 900 MHz
18
19
dB

f = 1800 MHz
13
14
dB
VVS-OUT = 2.5 V; IVS-OUT = 0;

f = 900 MHz
26
dB
VVS-OUT = 2.5 V; IVS-OUT = 0;

f = 1800 MHz
20
dB

f = 900 MHz; S = opt
1.8
dB

f = 1800 MHz; S = opt
1.8
dB
VVS-OUT = 2.3 V; IVS-OUT = 3.6 mA;

f = 900 MHz
6.5
dBm
VVS-OUT = 2.3 V; IVS-OUT = 3.5 mA;

f = 1800 MHz
4.8
dBm
Note
1. See application note RNR-T45-99-B-0514.
2010 Sep 13
MIN.
NXP Semiconductors
BGA2003
MGS537
200
handbook, halfpage
handbook, halfpage
100 pF
Ptot
(mW)
R1
VS
150
L1
C
RF out
RCTRL
VCTRL
100
BGA2003
50
2
C
0
0
RF in
50
100
150
MGS536
Fig.2 Typical application circuit.
Ts (C)
200
Fig.3 Power derating.
MGS538
MGS539
30
2.5
handbook, halfpage
handbook, halfpage
I CTRL
(mA)
I VS-OUT
(mA)
20
1.5
10
0.5
0
0
0.5
1.5
2
VCTRL (V)
ICTRL = (VCTRL 0.83)/296.
VS-OUT = 2.5 V.
Fig.4
Fig.5
Control current as a function of the control

voltage on pin 3; typical values.
2010 Sep 13
0.5
1.5
2
I CTRL (mA)
2.5
Bias current as a function of the control

current; typical values.
NXP Semiconductors
BGA2003
MGS540
30
I VS-OUT
(mA)
25
MGS541
20
handbook, halfpage
handbook, halfpage
(6)
I VS-OUT
(mA)
(5)
15
20
(4)
15
10
(3)
10
5
5
(2)
(1)
0
40
VS-OUT = 2.5 V.
(1) ICTRL = 0.2 mA.
(2) ICTRL = 0.4 mA.
(3) ICTRL = 1.0 mA.
Fig.6
0
0
40
80
120
Tamb (C)
(4) ICTRL = 1.5 mA.

(5) ICTRL = 2.0 mA.
(6) ICTRL = 2.5 mA.
4
VVS-OUT (V)
ICTRL = 1 mA.
Bias current (IVS-OUT) as a function of the

ambient temperature with ICTRL as
parameter; typical values.
Fig.7
MGS542
25
Bias current (IVS-OUT) as a function of the

voltage at the output pin (VVS-OUT); typical
values.
MGS543
30
gain
(dB)
25
handbook, halfpage
handbook, halfpage
fT
(GHz)
20
MSG
Gmax
GUM
20
15
15
10
10
0
0
10
20
30
I VS-OUT (mA)
10
VVS-OUT = 2.5 V; f = 1000 MHz.
VVS-OUT = 2.5 V; f = 900 MHz.
Fig.8
Fig.9
Transition frequency as a function of the

bias current (IVS-OUT); typical values.
2010 Sep 13
15
20
25
I VS-OUT (mA)
Gain as a function of the bias current

(IVS-OUT); typical values.
NXP Semiconductors
BGA2003
MGS544
25
gain
(dB)
MGS545
40
handbook, halfpage
handbook, halfpage
gain
(dB)
MSG
20
30
Gmax
15
20
G UM
GUM
Gmax
10
10
5
0
102
0
0
10
15
20
25
IVS-OUT (mA)
103
f (MHz)
104
VVS-OUT = 2.5 V; f = 1800 MHz.
VVS-OUT = 2.5 V; IVS-OUT = 10 mA.
Fig.10 Gain as a function of the bias current

(IVS-OUT); typical values.
Fig.11 Gain as a function of frequency; typical

values.
MGS546
3
min
(dB)
2.5
handbook,
NF halfpage
2
(1)
(3)
(2)
(4)
1.5
0.5
0
1
(1)
(2)
(3)
(4)
10
I VS-OUT (mA)
102
f = 2400 MHz.
f = 1800 MHz.
f = 1000 MHz.
f = 900 MHz.
Fig.12 Minimum noise figure as a function of the

bias current (IVS-OUT); typical values.
2010 Sep 13
NXP Semiconductors
BGA2003
handbook, full pagewidth
90
unstable region
source
135
1.0
+1
45
+2
+ 0.5
unstable
region load
0.6
(1)
(2)
+ 0.2
180
0.5
0.4
+5
(3)
opt
0.2
0.8
0.2
(4)
0.2
(1)
(2)
(3)
(4)
(5)
(6)
(5)
f = 900 MHz; VVS-OUT = 2.5 V;

IVS-OUT = 10 mA; Zo = 50 .
(6)
G = 23 dB.
G = 22 dB.
G =21 dB.
NF = 1.8 dB.
NF = 2 dB.
NF = 2.2 dB.
135
0.5
45
1
1.0
90
MGS547
Fig.13 Noise, stability and gain circles; typical values.
90
unstable region
source
135
+1
+ 0.5
(3)
+2
(4)
unstable
region load
1.0
45
0.8
(2)
0.6
(1)
+ 0.2
0.4
+5
0.2
180
f = 1800 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 10 mA; Zo = 50 .
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Gmax = 16.1 dB.

G = 16 dB.
G = 15 dB.
G = 14 dB.
NF = 1.9 dB.
NF = 2.1 dB.
NF = 2.3 dB.
0.2
0.5
opt
(5)
0.2
(6)
(7)
135
0.5
45
1
1.0
90
MGS548
Fig.14 Noise, stability and gain circles; typical values.
2010 Sep 13
NXP Semiconductors
BGA2003
90
1.0
+1
135
45
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180
0.2
0.5
2
2 GHz
1 GHz
3 GHz
200 MHz
500 MHz
0.2
0.5
135
100 MHz
45
1
1.0
90
MGS549
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 .
Fig.15 Common emitter input reflection coefficient (s11); typical values.
90
135
45
500 MHz
900 MHz
1 GHz
200 MHz
1.8 GHz
100 MHz
180
20
16
12
3 GHz
135
45
90
MGS550
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
2010 Sep 13
NXP Semiconductors
BGA2003
90
135
45
3 GHz
180
0.5
0.4
0.3
0.2
0.1
100 MHz
135
45
90
MGS551
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
90
1.0
+1
135
45
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180
0.2
0.5
5
100 MHz
900 MHz
1 GHz
0.2
135
3 GHz
0.5
1.8 GHz 500 MHz
200 MHz
5
45
1
1.0
90
MGS552
Fig.18 Common emitter output reflection coefficient (s22); typical values.
2010 Sep 13
NXP Semiconductors
BGA2003
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads
SOT343R
HE
v M A
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
2 mm
scale
DIMENSIONS (mm are the original dimensions)

UNIT
A1
max
bp
b1
e1
HE
Lp
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343R
2010 Sep 13
EUROPEAN
PROJECTION
10
NXP Semiconductors
BGA2003
DATA SHEET STATUS

DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customers own risk.
Limited warranty and liability Information in this

document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for

any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any

indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of

their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customers sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customers applications and products planned, as well as
for the planned application and use of customers third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur

for any reason whatsoever, NXP Semiconductors
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
NXP Semiconductors does not accept any liability related

to any default, damage, costs or problem which is based
on any weakness or default in the customers applications
or products, or the application or use by customers third
party customer(s). Customer is responsible for doing all
necessary testing for the customers applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customers third party
customer(s). NXP does not accept any liability in this
respect.
Right to make changes NXP Semiconductors

reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use NXP Semiconductors products are
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use in life support, life-critical or safety-critical systems or
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of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
2010 Sep 13
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NXP Semiconductors
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Limiting values Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Quick reference data The Quick reference data is an

extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
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qualified products in automotive equipment or
applications.
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and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
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specifications, and (b) whenever customer uses the
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regulations. Export might require a prior authorization from
national authorities.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for the marking codes
and the package outline drawings which were updated to the latest version.
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NXP B.V. 2010

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Printed in The Netherlands
R77/05/pp13
Date of release: 2010 Sep 13

Data Sheet: Silicon MMIC Amplifier

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DISCRETE SEMICONDUCTORS

Silicon MMIC amplifier

Very high power gain

Low noise figure

Integrated temperature compensated biasing

CTRL (bias current control)

Control pin for adjustment bias current

Supply and RF output pin combined.

Wideband applications, e.g. analog and digital cellular

Low noise amplifiers

High frequency oscillators.

Marking code: A3*

* = - : made in Hong Kong

Fig.1 Simplified outline (SOT343R) and symbol.

QUICK REFERENCE DATA

VVS-OUT = 2.5 V; ICTRL = 1 mA;

maximum stable gain

VVS-OUT = 2.5 V; f = 1800 MHz;

VVS-OUT = 2.5 V; f = 1800 MHz; S = opt

Silicon MMIC amplifier

voltage on control pin

supply current (DC)

total power dissipation

operating junction temperature

forced by DC voltage on RF input

insertion power gain

input intercept point; note 1

VVS-OUT = 2.5 V; ICTRL = 0.4 mA

VVS-OUT = 2.5 V; ICTRL = 1.0 mA

VVS-OUT = 2.5 V; IVS-OUT = 10 mA;

VVS-OUT = 2.5 V; IVS-OUT = 10 mA;

VVS-OUT = 2.5 V; IVS-OUT = 10 mA;

VVS-OUT = 2.5 V; IVS-OUT = 10 mA;

VVS-OUT = 2.5 V; IVS-OUT = 0;

VVS-OUT = 2.5 V; IVS-OUT = 0;

VVS-OUT = 2.5 V; IVS-OUT = 10 mA;

VVS-OUT = 2.5 V; IVS-OUT = 10 mA;

VVS-OUT = 2.3 V; IVS-OUT = 3.6 mA;

VVS-OUT = 2.3 V; IVS-OUT = 3.5 mA;

Silicon MMIC amplifier

Fig.2 Typical application circuit.

Fig.3 Power derating.

ICTRL = (VCTRL 0.83)/296.

Control current as a function of the control

Bias current as a function of the control

Silicon MMIC amplifier

(4) ICTRL = 1.5 mA.

Bias current (IVS-OUT) as a function of the

Bias current (IVS-OUT) as a function of the

VVS-OUT = 2.5 V; f = 1000 MHz.

VVS-OUT = 2.5 V; f = 900 MHz.

Transition frequency as a function of the

Gain as a function of the bias current

Silicon MMIC amplifier

VVS-OUT = 2.5 V; f = 1800 MHz.

VVS-OUT = 2.5 V; IVS-OUT = 10 mA.

Fig.10 Gain as a function of the bias current

Fig.11 Gain as a function of frequency; typical

Fig.12 Minimum noise figure as a function of the

Silicon MMIC amplifier

handbook, full pagewidth

f = 900 MHz; VVS-OUT = 2.5 V;

Fig.13 Noise, stability and gain circles; typical values.