CNY742H/ CNY744H

Vishay Telefunken

Multichannel Optocoupler with Phototransistor Output

Description
The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in an 8-lead, resp. 16-lead
plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance between input and output for highest safety
requirements.

Applications
circuits,

14926

non-interacting

Features

Emitter Coll.

D CNY74-2H includes 2 isolater channels

D CNY74-4H includes 4 isolater channels
D Isolation test voltage VIO = 5 kV
D Test class 25/100/21 DIN 40 045
D Low coupling capacitance of typical 0.3 pF
D Current Transfer Ratio (CTR) of typical 100%
D Low temperature coefficient of CTR
D Wide ambient temperature range
D Underwriters Laboratory (UL) 1577 recognized,

Coll. Emitter

14711

Galvanically separated
switches

Anode Cath. Cath. Anode

8 PIN
16 PIN

file number E-76222

D CSA (CUL) 1577 recognized, file number

E-76222 Double Protection

D Coupling System U

Order Instruction
Ordering Code
CNY742H
CNY744H

Rev. A2, 19Jul99

CTR Ranking
50 to 600%
50 to 600%

Remarks
8 Pin = Dual channel
16 Pin = Quad channel

1 (9)

CNY742H/ CNY744H
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature

Test Conditions

tp 10ms
Tamb 25C

Symbol
VR
IF
IFSM
PV
Tj

Value
6
60
1.5
100
125

Unit
V
mA
A
mW
C

Symbol
VCEO
VECO
IC
ICM
PV
Tj

Value
70
7
50
100
150
125

Unit
V
V
mA
mA
mW
C

Symbol
VIO 1)
Ptot
Tamb
Tstg
Tsd

Value
5
250
40 to +100
55 to +125
260

Unit
kV
mW
C
C
C

Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Peak collector current
Power dissipation
Junction temperature

Test Conditions

tp/T = 0.5, tp 10 ms
Tamb 25C

Coupler
Parameter
Test Conditions
AC isolation test voltage (RMS) t = 1 min
Total power dissipation
Tamb 25C
Ambient temperature range
Storage temperature range
Soldering temperature
2 mm from case, t 10 s
1) Related to standard climate 23/50 DIN 50014

2 (9)

Rev. A2, 19Jul99

CNY742H/ CNY744H
Vishay Telefunken
Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter
Forward voltage

Test Conditions
IF = 50 mA

Symbol
VF

Min.

Typ.
1.25

Max.
1.6

Unit
V

Test Conditions
IC = 1 mA
IE = 100 mA
VCE = 20 V, IF = 0, E = 0

Symbol
VCEO
VECO
ICEO

Min.
70
7

Typ.

Max.

Unit
V
V
nA

Test Conditions
t=2s
VIO = 1000 V,
40% relative humidity
IF = 10 mA, IC = 1 mA

Symbol
VIO1)
RIO1)

Min.
5

Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current

100

Coupler
Parameter
DC isolation test voltage
Isolation resistance
Collector emitter
saturation voltage
Cut-off frequency

VCE = 5 V, IF = 10 mA,
RL = 100 W
Coupling capacitance
f = 1 MHz
1) Related to standard climate 23/50 DIN 50014

Typ.

Max.

1012

VCEsat

Unit
kV

0.3

fc

100

kHz

Ck

0.3

pF

Current Transfer Ratio (CTR)

Parameter
IC/IF

Test Conditions
VCE = 5 V, IF = 5 mA
VCE = 5 V, IF = 10 mA

Rev. A2, 19Jul99

Type

Symbol
CTR
CTR

Min.
0.5
0.6

Typ.
1.0
1.2

Max.
6.0

Unit

3 (9)

CNY742H/ CNY744H
Vishay Telefunken
Switching Characteristics
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time

IF

Test Conditions
VS = 5 V, IC = 2 mA, RL = 100 W ((see figure
g
1))

Symbol
td
tr
tf
ts
ton
toff
ton
toff

VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure

g
2))

Typ.
3.0
3.0
4.7
0.3
6.0
5.0
9.0
18.0

Unit
ms
ms
ms
ms
ms
ms
ms
ms

+5V

IF

IC = 2 mA ; Adjusted through
input amplitude

RG = 50 W
tp
= 0.01
T
tp = 50 ms

96 11698

IF
0
Channel I

50

100

Channel II

tp
Oscilloscope
RL = 1 M W
CL = 20 pF

95 10804

IC
100%
90%

Figure 1. Test circuit, non-saturated operation

10%
0
IF

IF = 10 mA

td

IC

RG = 50 W
tp
0.01
T

ts

ton

tp = 50 ms

Channel I
50 W

Channel II
1 kW

tr

+5V

Oscilloscope
RL 1 MW
CL 20 pF

tp
td
tr
ton (= td + tr)

tf
toff

pulse duration
delay time
rise time
turn-on time

ts
tf
toff (= ts + tf)

storage time
fall time
turn-off time

Figure 3. Switching times

95 10843

Figure 2. Test circuit, saturated operation

4 (9)

Rev. A2, 19Jul99

CNY742H/ CNY744H
Vishay Telefunken
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
10000
Coupled device
ICEO Collector Dark Current,
with open Base ( nA )

P tot Total Power Dissipation ( mW )

300
250
200
Phototransistor

150
IR-diode
100
50

VCE=20V
IF=0
1000

100

10

1
0

40

80

120

Tamb Ambient Temperature ( C )

96 11700

100
IC Collector Current ( mA )

I F Forward Current ( mA )

100.0

10.0

1.0

0.1

VCE=5V
10

0.1

0.01
0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF Forward Voltage ( V )

96 11862

0.1

100

10

Figure 8. Collector Current vs. Forward Current

100

2.0

20mA
IC Collector Current ( mA )

VCE=5V
IF=5mA
1.5

1.0

0.5

0
25

IF Forward Current ( mA )

95 11027

Figure 5. Forward Current vs. Forward Voltage

CTR rel Relative Current Transfer Ratio

100

75

Figure 7. Collector Dark Current vs.

Ambient Temperature

1000.0

95 11025

50

Tamb Ambient Temperature ( C )

95 11026

Figure 4. Total Power Dissipation vs.

Ambient Temperature

25

IF=50mA
10mA

10

5mA

2mA

1mA
0.1

25

50

75

Tamb Ambient Temperature ( C )

Figure 6. Relative Current Transfer Ratio vs.

Ambient Temperature

Rev. A2, 19Jul99

0.1
95 10985

10

100

VCE Collector Emitter Voltage ( V )

Figure 9. Collector Current vs. Collector Emitter Voltage

5 (9)

CNY742H/ CNY744H

1.0

t on / t off Turn on / Turn off Time ( m s )

VCEsat Collector Emitter Saturation Voltage ( V )

Vishay Telefunken

20%
0.8
CTR=50%
0.6

0.4
0.2

10%

0
1

toff
20
10
ton
0

100

10

15

20

Figure 12. Turn on / off Time vs. Forward Current

t on / t off Turn on / Turn off Time ( m s )

VCE=5V

10

IF Forward Current ( mA )

95 11031

1000
CTR Current Transfer Ratio ( % )

30

100

10
IC Collector Current ( mA )

Figure 10. Collector Emitter Saturation Voltage vs.

Collector Current

10

Non Saturated
Operation
VS=5V
RL=100W

ton

6
toff
4
2
0

0.1

10

100

IF Forward Current ( mA )

Figure 11. Current Transfer Ratio vs. Forward Current

6 (9)

Saturated Operation
VS=5V
RL=1kW

40

95 11028

95 11029

50

0
95 11030

10

IC Collector Current ( mA )

Figure 13. Turn on / off Time vs. Collector Current

Rev. A2, 19Jul99

CNY742H/ CNY744H
Vishay Telefunken
Type

XXXXXXXX
Date
Code
(YM)

820 U TFK 63

15091

Pin 1
Indication

Coupling
System
Indicator

Company
Logo

Production
Location

Figure 14. Marking example

Dimensions of CNY742 in mm

y
y

weight:
ca. 0.55 g
creepage distance: 6 mm
air path:
6 mm
after mounting on PC board

14784

14784

Rev. A2, 19Jul99

7 (9)

CNY742H/ CNY744H
Vishay Telefunken
Dimensions of CNY744 in mm

y
y

weight:
ca. 1.0 g
creepage distance: 6 mm
air path:
6 mm
after mounting on PC board

14783

8 (9)

Rev. A2, 19Jul99

CNY742H/ CNY744H
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Rev. A2, 19Jul99

9 (9)