Seminar Report on

Design of Low Phase-Noise

Microwave Oscillator
Submitted By
UPENDRA HATIYA - 12EC63R07
SHILPI RUCHI KERKETTA - 12EC63R05
BHARAT BHUSHAN 12EC63R0
M.Tech. 1st Year (RF & MW)

RF & Microwave Engineering

Department of Electronics & Electrical Communication
Engineering

IIT Kharagpur

Phase noise sudden change in the phase of signal which corresponds to high
frequency components

Considering a sinusoidal signal of certain amplitude in time domain

Its frequency component in frequency domain. A peak at the frequency value.

A Amplitude change occurs at a time t1 because of an additive noise and changes

the phase of signal i.e. phase noise

This phase change is change in amplitude. This amplitude will then decay to
correct itself and this decay corresponding to time t1 to t2.

In frequency this decay corresponds to a high frequency component. And its value
is related to the time taken by the signal to decay and again come to the previous
fashion.

The resistive component presents in the design is responsible of the fast or slow
decay of the amplitudes. As shown in the time domain representation of wave
form. We can easily understand that the decay cause due to high Q is less as
compare to lower Q.

Response due to low Q value of design and it shows that the frequency component
generated is more which is undesired because high frequency corresponding to
high power so more power will loss in case of high frequency components.

But as we use high Q design the change in phase due to noise will reduce slowly
and have less frequency component so that we will get less energy loss.

Data sheet of transistor used i.e. BPF504. Just by having these values in mind we
have to bias transistor so that it would be in saturation.

Basic amplifier circuit after proper biasing and connections with VCC and GND

11

 Osc. starts with noise i.e. white Gaussian noise contains almost all frequency
components but of very low amplitude.
After that according to the dimension of resonator and the coupling in
between resonators, some components of frequency starts transferring in
between resonator.
The amplifier increase the frequency component of that noise, which
bandpassed through the resonator.
As we are using feedback then the amplified signal is divided and some of
its part again sent to the resonator so that barkhausen criteria would be
fulfilled for oscillation.

At the output port of basic amplifier circuit we need to use a bandpassing structure
which will act as selective feedback design and make the oscillation sustain.

Butterworth Lowpass Prototype Filters

For Butterworth or maximally flat lowpass prototype filters having a transfer
function
given in figure1 with an insertion loss LAr = 3.01 dB at the cutoff c = 1, the
element
|S21 (j)|2 = 1/( 1+2n
values as referring to

Lowpass Prototype Filters for all poles filters with a) a ladder network
structure & b) its dual

this may be computed by

g0 = 1.0
gi = 2 sin((2i-1)/2n)
gn+1 = 1.0

for i = 1 to n

the two-port Butterworth filters considered here are always symmetrical

in network structure, namely, g0 = gn+1, g1 = gn and so on.

To determine the degree of a Butterworth lowpass prototype, a specification that
is usually the minimum stopband attenuation LAs dB at = s for s > 1 is
given.
Hence
n log(10.1LAS 1)/2logs
For example, if LAs = 40 dB and s = 2, n 6.644, i.e., a 7-pole (n = 7)
Butterworth
prototype should be chosen.

Stub Bandpass Filters

Synchronously Tuned Coupled-Resonator Circuits

Electric Coupling
An equivalent lumped-element circuit model for electrically coupled
RF/microwave resonators is given in Figure below, where L and C are the selfinductance and self capacitance, so that (LC)1/2 equals the angular resonant
frequency of uncoupled resonators, and Cm represents the mutual capacitance. As
mentioned earlier, if the coupled structure is a distributed element, the lumpedelement circuit equivalence is valid on a narrow-band basis, namely, near its
resonance. The same comment is applicable for the other coupled structures
discussed later. Now, if we look into reference planes T1T1 and T2T2, we can
see a two-port network that may be described by the following set of equations:
I1 = jCV1 jCmV2
I2 = jCV2 jCmV1

in which a sinusoidal waveform is assumed. It might be well to mention that

implies that the self-capacitance C is the capacitance seen in one resonant loop of

when the capacitance in the adjacent loop is shorted out. creasing voltage in
resonant loop 2 and loop 1, respectively. four Y parameters
Y11 = Y22 = jC
Y12 = Y21 = jCm
can easily be found from definitions.

(a) Synchronously tuned coupled resonator circuit with electric coupling. (b) An
alternative
form of the equivalent circuit with an admittance inverter J = Cm to represent the
coupling.
According to the network theory an alternative form of the equivalent circuit
in Figure can be obtained and is shown in Figure. This form yields the same twoport parameters as those of the circuit of Figure3 (a), but it is more convenient for
our discussions. Actually, it can be shown that the electric coupling between the
two resonant loops is represented by an admittance inverter J = Cm. If the
symmetry plane TT in Figure 3(b) is replaced by an electric wall (or a short
circuit), the resultant circuit has a resonant frequency

This resonant frequency is lower than that of an uncoupled single resonator. A

physical explanation is that the coupling effect enhances the capability to store
charge of the single resonator when the electric wall is inserted in the symmetrical
plane of the coupled structure. Similarly, replacing the symmetry plane in Figure3
(b) by a magnetic wall (or an open circuit) results in a single resonant circuit
having a resonant frequency

In this case, the coupling effect reduces the capability to store charge so that the
resonant
frequency is increased.
KE

which is not only identical to the definition of ratio of the coupled electric energy
to the stored energy of uncoupled single resonator, but also consistent with the
coupling coefficient defined by figure above for coupled-resonator filter.

FORMULATION FOR EXTRACTING EXTERNAL QUALITY FACTOR Qe

Two typical input/output (I/O) coupling structures for coupled microstrip resonator
filters, namely the tapped line and the coupled line structures, are shown with the
microstrip open-loop resonator, though other types of resonators may be used (see
Figure 4(a). For the tapped line coupling, usually a 50 ohm feed line is directly
tapped onto the I/O resonator, and the coupling or the external quality factor is
controlled
by the tapping position t, as indicated in Figure 5(a)0(a). For example, the

Typical I/O coupling structures for coupled resonator filters. (a) Tapped-line
coupling. (b) Coupled-line coupling.
smaller the t, the closer is the tapped line to a virtual grounding of the resonator,
which results in a weaker coupling or a larger external quality factor. The coupling
of the coupled line stricture in Figure 4(a)(b) can be found from the coupling gap g
and the line width w. Normally, a smaller gap and a narrower line result in a
stronger I/O coupling or a smaller external quality factor of the resonator.

Doubly Loaded Resonator

Although the Qe is defined for a singly loaded resonator, if the resonator is
symmetrical,
one could add another symmetrical load or port to form a two-port network, as
Figure 6 shows, where TT represents the symmetrical plane and the single LC
resonator has been separated into two symmetrical parts. When the symmetrical
plane TT is short-circuited, we have

where Yino and S11o are the odd-mode input admittance and reflection coefficient
at port 1, respectively. On the other hand, replacing the TT plane with an open
circuit yields the corresponding parameters for the even mode:

where _0 = 1/(LC) and the approximation (2 02 )/2 with = 0 +

has been made.

Equivalent circuit of the I/O resonator with double loading.

whose magnitude is given by

Shown in Figure 7 is a plot of |S21| against /0. At resonance, = 0 and thus

|S21| reaches its maximum value, namely |S21(0)| = 1. When the frequency shifts
such that

the value of |S21| has fallen to 0.707 (or 3 dB) of its maximum value

Resonant amplitude response of S21 for the circuit

Where 3 dB is the bandwidth for which the attenuation for S21 is up 3 dB from
that
at resonance, as indicated in Figure 7. Define a doubly loaded external quality
factor Qe as

Using above equation to extract the Qee first, then the singly loaded external
quality factor Qe is simply the twice of Qe.

Typical coupling structures of coupled resonators with (a) electric coupling,

(b) magnetic coupling, (c) and (d) mixed coupling.
These coupled structures result from different orientations of a pair of
open-loop resonators, which are separated by a spacing s. It is obvious that any
coupling in those structures is proximity coupling, which is, basically, through
fringe fields. The nature and the extent of the fringe fields determine the nature
and the strength of the coupling. It can be shown that at resonance of the
fundamental
mode, each of the open-loop resonators has the maximum electric field
density at the side with an open gap, and the maximum magnetic field density at
the opposite side. Because the fringe field exhibits an exponentially decaying

character outside the region, the electric fringe field is stronger near the side
having the maximum electric field distribution, whereas the magnetic fringe field
is stronger near the side having the maximum magnetic field distribution. It
follows that the electric coupling can be obtained if the open sides of two coupled
resonators are proximately placed, as Figure shows, and the magnetic coupling can
be obtained if the sides with the maximum magnetic field of two coupled
resonators are proximately placed, as Figure shows. For the coupling structures in
Figure the electric and magnetic fringe fields at the coupled sides may have
comparative distributions, so that both electric and the magnetic couplings occur.
In this case the coupling may be referred to as mixed coupling. However, it will be
demonstrated later that these two coupling structures exhibit distinguishing
coupling characteristics.

Typical resonant responses of coupled resonator structures. (a) For the structure in
Figure( a). (b) For the structure in Figure (b).

The center frequency and fractional bandwidth of the filter are set to 2 GHz
and 4%, respectively. The normalized frequency of the attenuations pole is selected
to a = 2. Hence, the element values of the low-pass prototype filter are g0 =1,
g1 = 0.95449, g2 = 1.38235, J1 = -0.16271, J2 = 1.06062. The coupling
coefficients and external quality factor are calculated as M12 = M34 = 0.03482,
M23 = 0.03069, M14 = 0.0068, and Qe = 23.86.

Complex quality factor Qsc and group delay.

OSCILLATOR DESIGN CIRCUIT USING TWO POLE

COUPLED RESONATOR AS FEEDBACK (BAND
PASSING ELEMENT)

REFERENCES :[1] Chao-Hsiung Tseng and Chih-Lin Chang, Design of Low PhaseNoise
Microwave Oscillator and Wideband VCO Based on
Microstrip Combline Bandpass Filters, IEEE transactions on
microwave theory and techniques, vol. 60, no. 10, pp. 3151-3160, oct
2012.
[2] J.-S. Hong and M. J. Lancaster, Microstrip Filter for RF/Microwave
Application. New York: Wiley, 2001.