CHAPTER 1: Semiconductor Diodes

3. Consult your reference library and list three materials that have a negative temperature coefficient and three that
have a positive temperature coefficient.
Negative = carbon, silicon and germanium. Positive =aluminum, copper, gold
7. Describe the difference between n-type and p-type semiconductor materials. An
N-type material- is created by introducing impurity elements that have five valence electrons (pentavalent). The ptype material is formed by doping a pure germanium or silicon crystal with impurity atoms having three valence
electrons.
N-type Semi-Conductor
The impurity atoms added, provide extra electrons in the structure and are called donor atoms.
The electrons are majority carriers and holes are minority carriers.
The electrons density (ne) is much greater than the hole density (nh) i.e. >> nh.
P-type Semi-Conductor
The impurity atoms added, create vaccines of electrons (i.e. holes) in the structure and are called acceptor atoms.
The holes are majority carriers and electrons are minority carriers.
The holes density (nh) is much greater than the electrons density (ne) i.e. >> ne.

10. Sketch the atomic structure of silicon and insert an impurity of arsenic as demonstrated for silicon in Fig. 1.7.

11. Repeat Problem 10, but insert an impurity of indium.

15. a. Determine the thermal voltage for a diode at a temperature of 20C.
b. For the same diode of part (a), find the diode current using Eq. 1.2 if I s= 40 nA, n= 2 (low value of V D), and the applied bias
voltage is 0.5 V.

15. (A) 25.27 mV (b) 11.84 mA

19. Given a diode current of 6 mA, VT= 26 mV, n= 1, and I s= 1 nA, find the applied voltage V D

19. 0.41 V

22. Compare the characteristics of silicon and a germanium diode and determine which you would prefer to use for most practical
applications. Give some details. Refer to a manufacturers listing and compare the characteristics of a germanium and a silicon
diode of similar maximum ratings.

26. What is the one important difference between the characteristics of a simple switch and those of an ideal diode?

Both have two terminals, but a switch has a mechanical actuated element that
closes the circuit. A diode does not have this. A diode blocks current flow when a
reverse voltage (that is not too large) is applied to it, but when a forward direction
voltage is applied current is allowed to flow; the cost is a small voltage drop across
the diode. A switch doesn't care which direction current is flowing, and there should
not be any voltage drop (ideally) in a switch.
30. Calculate the dc and ac resistances for the diode of Fig. 1.15 at a forward current of 10 mA and compare their magnitudes.
Vd = .8v

Vd= .81V - .72V

Id= 20-0

34. Determine the average ac resistance for the diode of Fig. 1.15 for the region between 0.6 V and 0.9 V. Id= 4-0
38. Find the piecewise-linear equivalent circuit for the germanium and gallium arsenide diodes of Fig. 1.18.
43. The no-bias transition capacitance of a silicon diode is 8 pF with V K= 0.7 V and n= 1/2. What is the transition capacitance if
the applied reverse bias potential is 5 V?

43. 2.81 pF

Log
scales are often used to provide a broader range of values for a variable in a limited amount of space.
Temperature and applied reverse bias are very important factors in designs sensitive to the reverse saturation
47. a. Comment on the change in capacitance level with increase in reverse-bias potential for the diode of Fig. 1.37.

current. b. What is the level of C (0)? c. Using V K= 0.7 V, find the level of n in Eq. 1.9. 47.

(B) 6 pF (c) 0.58

51. using the characteristics of Fig. 1.37, determine the maximum power dissipation levels for the diode at room temperature
(25C) and 100C. Assuming that Vf Remains fixed at 0.7 V, how has the maximum level of I F changed between the two
temperature levels?

51. 25C: 500 mW; 100C: 260 mW; 25C: 714.29 mA; 100C: 371.43 mA
*54. At what temperature will the 10-V Zener diode of Fig. 1.47 have a nominal voltage of 10.75 V? (Hint: Note the data in Table
1.7.)
59. Referring to Fig. 1.52e, what would appear to be an appropriate value of V K for this device? How does it compare to the
value of V K for silicon and germanium?

59. 2 V greater than vr=-15.75 c(0)=6 ct=2.3 n=1/2

*62. a. What is the percentage increase in relative efficiency of the device of Fig. 1.52 if the peak current is increased from 5 mA
to 10 mA? 100%
b. Repeat part (a) for 30 mA to 35 mA (the same increase in current). 17%

c. Compare the percentage increase from parts (a) and (b). At what point on the curve would you say there is little to be gained by
further increasing the peak current?