Apm 4048 D

APM4048DU4
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
Pin Description
D1
N-Channel
D2
40V/7.5A,
S1
G1
S2
G2
RDS(ON)=25m (typ.) @ VGS=10V

RDS(ON)=35m (typ.) @ VGS=4.5V
P-Channel
Top View of TO-252-4
-40V/-6A,
RDS(ON)=37m (typ.) @ VGS= -10V
(3)
D1
RDS(ON)=49m (typ.) @ VGS=-4.5V
(3)
D2
Super High Dense Cell Design

Reliable and Rugged
(2)
G1
Lead Free and Green Devices Available (RoHS
(5)
G2
Compliant)
Applications
Power Management in LCD monitor/TV
S1
(1)
S2
(4)
N MOS
P MOS
Ordering and Marking Information

APM4048D
Assembly Material
Handling Code
Temperature Range
Package Code
APM4048D U4 :
Package Code
U4 : TO-252-4
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
APM4048D
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.4 - Jan., 2009
www.anpec.com.tw
APM4048DU4
Absolute Maximum Ratings
Symbol
(TA = 25C unless otherwise noted)

Rating
Parameter
N Channel
P Channel
VDSS
Drain-Source Voltage
40
-40
VGSS
Gate-Source Voltage
20
20
ID
IDM
IS
TJ
TC=25C
7.5
Pulsed Drain Current
TC=25C
30
Diode Continuous Forward Current
TC=25C
7.5
-6
A
C
-55 to 150
Power Dissipation
RJC
150
Storage Temperature Range
PD
-6
-20
Maximum Junction Temperature
TSTG
RJA
Continuous Drain Current
TC=25C
25
TC=100C
10
Unit
Thermal Resistance-Junction to Case
C/W
Thermal Resistance-Junction to Ambient
50
C/W
Note a : Surface Mounted on 1in pad area, t 10sec.

Note b : Current limited by bond wire.
2
Electrical Characteristics
Symbol
Parameter

APM4048DU4
Test Conditions
Min.
Typ.
Max.
Unit
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V, IDS=250A
N-Ch
40
VGS=0V, IDS=-250A
P-Ch
-40
30
-1
-30
VDS=32V, V GS=0V
Zero Gate Voltage Drain
Current
IDSS
T J=85C
VDS=-32V, V GS=0V
T J=85C
VGS(th)
Gate Threshold Voltage
IGSS
R DS(ON)
Gate Leakage Current
Drain-Source On-State
Resistance

Rev. B.4 - Jan., 2009
N-Ch
P-Ch
VDS=VGS, IDS=250A
N-Ch
1.3
2.1
2.5
VDS=VGS, IDS=-250A
P-Ch
-1.3
-1.9
-2.5
VGS=20V, V DS=0V
N-Ch
100
VGS=20V, V DS=0V
P-Ch
100
VGS=10V, IDS=7.5A
N-Ch
25
33
VGS=-10V, IDS=-6A
P-Ch
37
48
VGS=4.5V, IDS=5A
N-Ch
35
45
VGS=-4.5V, IDS=-3.5A
P-Ch
49
68
nA
www.anpec.com.tw
APM4048DU4
Electrical Characteristics (Cont.)
Symbol
Parameter
APM4048DU4
Test Conditions
Min.
Typ.
Max.
Unit
Diode Characteristics
a
VSD
ISD=2A, VGS=0V
N-Ch
0.8
1.1
ISD=-2A, VGS=0V
P-Ch
-0.8
-1.1
N-Ch
1.5
P-Ch
6.8
N-Ch
950
P-Ch
1110
N-Ch
115
P-Ch
125
N-Ch
75
P-Ch
70
N-Ch
13
25
P-Ch
17
N-Ch
10
19
P-Ch
12.5
24
N-Ch
27
50
P-Ch
40
73
N-Ch
10
P-Ch
15
28
N-Ch
N-Channel
ISD=7.5A, dlSD/dt =100A/s P-Ch
P-Channel
N-Ch
Reverse Recovery Charge ISD=-6A, dlSD/dt =100A/s
P-Ch
20
19
13
12
Diode Forward Voltage
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
N-Channel
VGS=0V, VDS=20V,
Frequency=1.0MHz
Coss
Output Capacitance
Crss
Turn-on Delay Time
tr
Turn-on Rise Time
tf
trr
Qrr
P-Channel
VGS=0V, VDS=-20V,
Frequency=1.0MHz
Reverse Transfer
Capacitance
td(ON)
td(OFF)
N-Channel
VDD=20V, RL=20,
IDS=1A, VGEN=10V,
RG=6
Turn-off Delay Time
P-Channel
VDD=-20V, RL=20,
IDS=-1A, VGEN=-10V,
RG=6
Turn-off Fall Time

Reverse Recovery Time
Gate Charge Characteristics
pF
ns
ns
nc
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
N-Channel
VDS=20V, VGS=10V,
IDS=7.5A
N-Ch
17.2
33
P-Ch
17.5
34.5
N-Ch
3.5
P-Channel
VDS=-20V, VGS=-10V,
IDS=-6A
P-Ch
2.8
N-Ch
5.3
P-Ch
nC
Note a : Pulse test ; pulse width300s, duty cycle2%.

Note b : Guaranteed by design, not subject to production testing.
Rev. B.4 - Jan., 2009
www.anpec.com.tw
APM4048DU4
Typical Operating Characteristics
N-Channel
Drain Current
Power Dissipation
30
8
7
ID - Drain Current (A)
Ptot - Power (W)
25
20
15
10
6
5
4
3
2
1
o
TC=25 C,VG=10V
TC=25 C
0
20 40 60 80 100 120 140 160 180
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance

Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
40
Tj - Junction Temperature (C)
300us
1ms
10ms
100ms
1s
DC
0.1
TC=25 C
0.01
0.01
20
100
10
0.1
10
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
2
Mounted on 1in pad

o
RJA : 50 C/W
Single Pulse
0.01
1E-4
100
VDS - Drain - Source Voltage (V)

Rev. B.4 - Jan., 2009
1E-3
0.01
0.1
10
100
Square Wave Pulse Duration (sec)
www.anpec.com.tw
APM4048DU4
Typical Operating Characteristics (Cont.)
N-Channel
Output Characteristics
Drain-Source On Resistance
60
30
VGS= 5, 6, 7, 8, 9, 10V
55
20
RDS(ON) - On - Resistance (m)
25
4V
15
10
3.5V
5
50
45
VGS=4.5V
40
35
VGS=10V
30
25
20
15
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
10
3.0
10
15
Gate-Source On Resistance

1.8
30
IDS =250A
ID=7.5A
1.6
Normalized Threshold Voltage
55
25
VDS - Drain-Source Voltage (V)
60
50
45
40
35
30
25
20
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
10
VGS - Gate - Source Voltage (V)

Rev. B.4 - Jan., 2009
25
50
75 100 125 150
www.anpec.com.tw
APM4048DU4
N-Channel
Source-Drain Diode Forward
1.8
30
VGS = 10V
IDS = 7.5A
10
Tj=150 C
1.4
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
Tj=25 C
1
0.6
o
0.4
-50 -25
RON@Tj=25 C: 25m
0
25
50
0.1
0.0
75 100 125 150
0.3
0.6
0.9
1.2
1.5
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1.8
10
1500
Frequency=1MHz
VDS= 20V
VGS - Gate - source Voltage (V)
ID= 7.5A
C - Capacitance (pF)
1200
Ciss
900
600
300
Coss
Crss
0
10
15
20
25
30
10 12 14 16 18 20
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)

Rev. B.4 - Jan., 2009
www.anpec.com.tw
APM4048DU4
P-Channel
Power Dissipation
Drain Current
7
30
-ID - Drain Current (A)
Ptot - Power (W)
25
20
15
10
5
4
3
2
1
o
TC=25 C,VG=-10V
TC=25 C
0
20 40 60 80 100 120 140 160 180
40
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance

Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
10
20
50
300us
1ms
10ms
100ms
1s
DC
0.1
TC=25 C
0.01
0.01
0.1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
2
0.01
1E-4 1E-3
100
-VDS - Drain - Source Voltage (V)

Rev. B.4 - Jan., 2009
Mounted on 1in pad

o
RJA : 50 C/W
0.01
0.1
10
100
Square Wave Pulse Duration (sec)
www.anpec.com.tw
APM4048DU4
P-Channel
Output Characteristics
20
VGS= -5-6,-7,-8,-9,-10V
100
-4V
18
90
16
14
12
-3.5V
10
8
6
-3V
80
70
VGS= -4.5V
60
50
VGS= -10V
40
30
20
2
0
0.0
0.5
1.0
1.5
2.0
2.5
10
3.0
10 12 14 16 18 20
Gate-Source On Resistance
100
1.6
IDS = -250A
ID= -6A
1.4
Normalized Threshold Voltage
90
80
70
60
50
40
30
20
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10
-VGS - Gate - Source Voltage (V)

Rev. B.4 - Jan., 2009
25
50
75 100 125 150
www.anpec.com.tw
APM4048DU4
P-Channel
Source-Drain Diode Forward

20
1.8
VGS = -10V
IDS = -6A
10
o
Tj=150 C
1.4
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
0.6
0.4
Tj=25 C
1
0.2
o
0.0
-50 -25
RON@Tj=25 C: 27m
0
25
50
0.1
0.0
75 100 125 150
0.3
0.6
0.9
1.2
1.5
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1500
1.8
10
Frequency=1MHz
VDS= -20V
-VGS - Gate - source Voltage (V)
ID= -6A
1200
C - Capacitance (pF)
Ciss
900
600
300
Coss
0
Crss
0
10
15
20
25
30
12
16
20
QG - Gate Charge (nC)

Rev. B.4 - Jan., 2009
www.anpec.com.tw
APM4048DU4
Package Information
TO-252-4
E
A
c2
E1
L4
D1
L3
b3
c
e
SEE VIEW A
S
Y
M
B
O
L
A
VIEW A
TO-252-4
MILLIMETERS
MIN.
2.18
INCHES
MAX.
MIN.
MAX.
2.39
0.086
0.094
0.005
0.13
A1
b
SEATING PLANE
L
0.25
GAUGE PLANE
A1
0.50
0.71
0.020
0.028
0.215
b3
4.32
5.46
0.170
0.46
0.61
0.018
0.024
c2
0.46
0.89
0.018
0.035
5.33
6.22
0.210
0.245
D1
4.57
6.00
0.180
0.236
6.35
6.73
0.250
0.265
E1
3.81
6.00
0.150
0.236
1.27 BSC
0.050 BSC
9.40
10.41
0.370
0.410
1.40
1.78
0.055
0.070
L3
0.89
2.03
0.035
0.080
L4
0
0.040
1.02
0

Rev. B.4 - Jan., 2009
10
www.anpec.com.tw
APM4048DU4
Carrier Tape & Reel Dimensions
P0
P2
P1
B0
E1
OD0
K0
A0
OD1 B
SECTION A-A
SECTION B-B
H
A
T1
Application
330.0
2.00 50 MIN.
TO-252-4
T1
16.4+2.00 13.0+0.50 1.5 MIN.

-0.00
-0.20
P0
P1
P2
4.00.10
8.00.10
2.00.05
D0
E1
20.2 MIN. 16.00.30 1.750.10 7.500.05
D1
1.5+0.10 1.5 MIN.

-0.00
A0
B0
K0
0.6+0.00 6.800.20 10.400.20 2.500.20

-0.40
(mm)
Devices Per Unit

Package Type
Unit
Quantity
TO-252-4
Tape & Reel
2500

Rev. B.4 - Jan., 2009
11
www.anpec.com.tw
APM4048DU4
Taping Direction Information
TO-252-4
USER DIRECTION OF FEED
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
t 25 C to Peak
25
Time
Reliability Test Program

Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9

Rev. B.4 - Jan., 2009
12
Description
245C, 5 sec
1000 Hrs Bias @125C
168 Hrs, 100%RH, 121C
-65C~150C, 200 Cycles
www.anpec.com.tw
APM4048DU4
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
217C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6C/second max.
6C/second max.
6 minutes max.
Time 25C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.
8 minutes max.
Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures

3
Package Thickness
Volume mm
<350
<2.5 mm
2.5 mm
240 +0/-5C
225 +0/-5C
Volume mm
350
225 +0/-5C
225 +0/-5C
Table 2. Pb-free Process Package Classification Reflow Temperatures

Package Thickness
Volume mm
<350
Volume mm
350-2000
Volume mm
>2000
<1.6 mm
260 +0C*
260 +0C*
260 +0C*
1.6 mm 2.5 mm
260 +0C*
250 +0C*
245 +0C*
2.5 mm
250 +0C*
245 +0C*
245 +0C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated
classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL
level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

Rev. B.4 - Jan., 2009
13
www.anpec.com.tw

Apm 4048 D

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APM4048DU4

Dual Enhancement Mode MOSFET (N- and P-Channel)

RDS(ON)=25m (typ.) @ VGS=10V

RDS(ON)=49m (typ.) @ VGS=-4.5V

Super High Dense Cell Design

Lead Free and Green Devices Available (RoHS

Power Management in LCD monitor/TV

Ordering and Marking Information

(TA = 25C unless otherwise noted)

Pulsed Drain Current

Diode Continuous Forward Current

Storage Temperature Range

Maximum Junction Temperature

Continuous Drain Current

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

Note a : Surface Mounted on 1in pad area, t 10sec.

(TA = 25C unless otherwise noted)

Gate Threshold Voltage

Gate Leakage Current

Copyright ANPEC Electronics Corp.

(TA = 25C unless otherwise noted)

Diode Forward Voltage

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

Note a : Pulse test ; pulse width300s, duty cycle2%.

ID - Drain Current (A)

Ptot - Power (W)

20 40 60 80 100 120 140 160 180

80 100 120 140 160

Safe Operation Area

Thermal Transient Impedance

ID - Drain Current (A)

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Mounted on 1in pad

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Square Wave Pulse Duration (sec)

RDS(ON) - On - Resistance (m)

ID - Drain Current (A)

ID - Drain Current (A)

Gate Threshold Voltage

Normalized Threshold Voltage

RDS(ON) - On - Resistance (m)

VDS - Drain-Source Voltage (V)

VGS - Gate - Source Voltage (V)

Copyright ANPEC Electronics Corp.

75 100 125 150

Tj - Junction Temperature (C)

Source-Drain Diode Forward

IS - Source Current (A)

75 100 125 150

Tj - Junction Temperature (C)

VSD - Source - Drain Voltage (V)

VGS - Gate - source Voltage (V)

QG - Gate Charge (nC)

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.