Electronic Devices,

Amplifiers Solved
Objectives: Part-1
ELECTRONIC DEVICES OBJECTIVE
QUESTIONS:

[1] The action of JFET in its equivalent

circuitcanberepresentedasa
A.CurrentcontrolledCurrentsource
B.CurrentcontrolledVoltagesource
C.VoltagecontrolledVoltagesource
D.VoltagecontrolledCurrentsource
Ans: D
Answer
[2]Achange in thevalue of theemitter
resistanceReinadifferentialamplifier
A.AffectsthedifferencemodegainAd
B.AffectsthecommonmodegainAc
C.AffectsbothAdandAc
D.DoesnoteffecteitherAdandAc
Ans:B
Answer
[3] Generally, the gain of a transistor
amplifierfallsathighfrequenciesdueto
the
A.InternalCapacitanceofthedevice
B.Couplingcapacitorattheinput
C.Skineffect
D.Couplingcapacitorattheoutput
Ans: A
Answer
[4] In a common emitter, unbypassed
resistorprovides
A.Voltageshutfeedback
B.Currentseriesfeedback
C.Negativevoltagefeedback
D.Positivecurrentfeedback

Answer
[5] A constant current signal across a
parallelRLCcircuitsgivesano/pof1.4V
atthesignalfrequencyof3.89kHz.Atthe
frequencyof4kHz,theo/pvoltagewillbe
A.1V
B.2V
C.1.4V
D.2.8V
Ans: B
Answer
[6] Class AB operation is often used in
power(largesignal)amplifiersinorderto
A.Getmaximumeffeciency
B.Removeevenharmonics
C.Overcomeacrossoverdistortion
D.Reducingcollectordissipation
Ans: C
Answer
[7] The bandwidth of an RF tuned
amplifierisdependenton
A.QfactorofthetunedO/Pcircuit
B.QfactorofthetunedI/Pcircuit
C.Quiescentoperatingpoint
D.QfactoroftheO/PandI/Pcircuitsas
wellasquiescentoperatingpoint
Ans: A
Answer
[8]MostofthelinearICsarebasedonthe
twotransistor differential amplifier
becauseofits
A.Inputvoltagedependentlineartransfer
characteristics
B.Highvoltagegain
C.Highinputresistance
D.HighCMMR
Ans: D

Answer
[9]Negativefeedbackinanamplifier
A.Reducesgain
B.Increasefrequencyandphasedistortion
C.Reducesbandwidth
D.IncreaseNoise
Ans: A
Answer
10]Adcpowersupplyhasnoloadvoltage
of30Vandafullloadvoltageof25Vat
fullload current of 1A. Its output
resistanceandloadregulationrespectively
are
A.5&20%
B.25&20%
C.5&16.7%
D.25&16.7%
Ans: B

ELECTRONIC DEVICES:
Part-2 Solved Objective
Questions
OBJECTIVEQUESTIONSFROM
ELECTRONICDEVICES:

[1]InforwardmodenpnBJT,if
thevoltageVccisincreasedthenthe
collectorcurrentwillincrease
A.Duetoohm'slaw,higherVcccauses
highercurrent
B.Duetobasewidthdecreaselesscarrier
recombineinthebaseregion
C.Asthegradientoftheminoritycarriers
inthebaseregionbecomessteeper
D.DuetoboththeBandC

Ans: D
Answer
[2]Thebarriervoltagepresentina
junctiondiodeistheeffectof
A.ThePsideandNsideofthejunction
formingabattery
B.Theemfrequiredtomovetheholesfast
enoughtohavethemobilityequaltothat
oftheelectrons
C.Therecombinationofchargecarriers
acrossthejunctionleavingbehindthe
oppositechargedions
D.Thevoltageneededtomakethe
semiconductormaterialbehaveasa
conductor
Ans: C
Answer
[3]ComparetoBJTtheFEThas
A.Highinputimpedance
B.Highgainbandwidthproduct
C.Bettercurrentcontrolledbehaviour
D.Highnoiseimmunity
Ans: A
Answer
[4]Anintrinsicsemiconductoratabsolute
zerotemperature
A.Hasalargenumberofholes
B.Behaveslikeaninsulator
C.Behaveslikeametallicconductor
D.Hasfewholesandsamenumberof
electrons
Ans: A
Answer
[5]Fortheoperationofadepletiontype
NMOSFET,thegatevoltagehastobe
A.Lowpositive
B.Highpositive
C.Highnegative

D.Zero
Ans:D
Answer
[6]Anemitterfollowerhashighinput
impedancebecause
A.Largeemitterresistanceisused
B.Largebiasingresistanceisused
C.Thereisnegativefeedbackinthebase
emittercircuit
D.Theemitterbasejunctionishighly
reversebiased
Ans: C
Answer
[7]Inadifferentialamplifieranideal
CMRRis
A.Infinity
B.Zero
C.1
D.+1
Ans: A
Answer
[8]InaPNPcircuit,thecollector
A.Hasaarrowpointinginward
B.Ispositivewithrespecttotheemitter
C.Isbiasedatasmallfractionofthebase
bias
D.Isnegativewithrespecttotheemitter
Ans:D
Answer
[9]APNPtransistorcanbereplacedwith
anNPNdeviceandthecircuitwilldothe
samething,providedthat
A.Thepowersupplyorbatterypolarityis
reversed
B.Thecollectorandemitterleadsare
interchanged

C.Thearrowispointinginward
D.APNPtransistorcanneverbereplaced
withNPNtransistor
Ans: A
Answer
[10]ABJThas
A.ThreePNjunctions
B.Threesemiconductorlayers
C.TwoNtypelayersaroundaPtype
layer
D.Alowavalanchevoltage
Ans: B
Answer
[11]Thebandgapofsiliconatroom
temperatureis________
A)1.3eV
B)0.7eV
C)1.1eV
D)1.4eV
Ans:C
Answer
[12]Theprimaryreasonforthe
widespreaduseofSiliconin
semiconductordevicetechnologyis
A)Abundanceofsilicononthesurfaceof
theearth
B)Largerbandgapofsiliconin
comparisontogermanium
C)Favorablepropertiesofsilicondioxide
(SiO2)
D)LowermeltingPoint
Ans:C
Answer
[13]Thecascadeamplifierisamultistage
configurationof
A)CCCB
B)CECB

C)CBCC
D)CECC
Ans:B
Answer
[14]InamultistageRCcoupledamplifier
thecouplingcapacitor______________
A)Limitsthelowfrequencyresponse
B)Limitsthehighfrequencyresponse
C)Doesnotaffectthefrequencyresponse
D)BlocktheDCcomponentwithout
affectingthefrequencyresponse
Ans: A

Electronic Devices: Part-3

Objective Questions
[1] In order for a BJT to conduct under
the conditions of no signal input, the
bias must be
(a) In the reverse direction at the E-B
junction, sufficient to cause forward
breakover.
(b) In the reverse direction at the E-B
junction, but not sufficient to cause
avalanche effect.
(c) Such that the application of a signal
would cause the transistor to go into a
state of cutoff.
(d) Such that the application of a
signal would cause the transistor to go
into a state of saturation.
(e) Such that the application of a
signal would cause the transistor to
become nonlinear.
Answer:
A
[2] The high input impedance of a
MOSFET makes this type of device
ideal for use in
(a) Weak-signal amplifiers

(b) High-power oscillators

(c) High-current rectifiers
(d) Antenna tuning networks
(e) Graphic equalizers
Answer:
A
[3] The drain of a JFET is the analog of
the
(a) Plate of a vacuum tube
(b) Emitter of a BJT
(c) Cathode of diode
(d) Positive electrode in a solar cell
(e) Substrate of a MOSFET
Answer:
A
[4] One of the technical limitations of
capacitive proximity sensors is the fact
that they
(a) Are not very sensitive to objects
that are poor electrical conductors.
(b) Are insensitive to objects that
reflect light.
(c) Are insensitive to metallic objects.
(d) Cannot be used with oscillators
(e) Require extreme voltages in order
to function properly
Answer:
A
[5] The power factor in an ac circuit is
defined as
(a) The actual power divided by the
maximum power the circuit can
handle.
(b) The ratio of the real power to the
imaginary power.
(c) The ratio of the apparent power to
the true power.
(d) The ratio of the true power to the
apparent power.
(e) The ratio of the imaginary power to
the apparent power.
Answer:
D
[6] The amount of current that a silicon

photodiode can deliver in direct

sunlight depends on
(a) The forward breakover voltage.
(b) The thickness of the substrate.
(c) The surface area of the P-N
junction.
(d) The applied voltage.
(e) The reverse bias.
Answer:
C
[7] In an amplifier that employs a PChannel JFET, the device can usually
be replaced with an N-channel JFET
having similar specifications, provided
that
(a) All the resistors are reversed in
polarity for the circuit in question
(b) The power supply polarity is
reversed for the circuit in question
(c) The drain, rather than the source, is
placed at signal ground
(d) The output is taken from the
source, rather than from the drain.
Answer:
[8] Secondary breakdown occurs in
(a) MOSFET but not in BJT
(b) Both MOSFET and BJT
(c) BJT but not in MOSFET
(d) None of these

Answer:
[9] In a transistor
(a) = / ( +1)
(b) = / (1- )
(c) = / (-1)
(d) = (+1)/

Answer: C
[10] The interbase resistance of a UJT
is
(a) Less than forward biased PN diode
(b) Higher than a FET
(c) Of the order of 1K an less
(d) In the range of 5K to 10K

Answer: D
[11] The VI characteristics of emitter of
a UJT is
(a) Similar to CE with a linear and
saturation region
(b) similar to FET with a linear and
saturation region
(c) Similar to tunnel diode in some
respects
(d) Linear between the peak point and
vally point
Answer: C
[12] An UJT used for triggering as SCR
has the supply voltage VBB = 25V.
The intrinsic stand off ratio n = 0.75.
The UJT will conduct when the bias
voltage VE is
(a) 25V
(b) >=18.75V
(c) 33.3V
(d) >=19.35V
Answer: D
[13] The Oscillator which is not
dependent on phase shift is
(a) Wien Bridge
(b) Clapp
(c) Relaxation
(d) Crystal
Answer: C
[14] For an UJT to function, the load
line must extend
(a) from saturation region to ohmic
region
(b) from saturation to peak value of
emitter voltage
(c) from valley point to peak point
(d) within valley and peak points in the
negative resistance region
Answer: D

Solution Hint:
[12] VE = .VBB + 0.6 =0.75 x 25
+0.6 =19.35

Ans:B
Answer
[3]InFETamplifiers,inputisIncorrect!
a)Acurrentsignal
b)Avoltagesignal
c)Eitheracurrentorvoltagesignal
d)Noneofthese
Ans:B
Answer
[4]Hparametersofatransistor
a)Areconstant
b)Varywithtemperature
c)Aredependentuponcollectorcurrent
d)Noneofthese

Electronic Devices Objective Questions

with Answers: Part-4

ELECTRONIC DEVICES OBJECTIVE

QUESTIONS

[1]Forharmonicgenerationtheamplifier
usedis
a)AudioAmplifier
b)ClassAAmplifier
c)RCAmplifier
d)classCTurnedAmplifier
Ans:D
Answer
[2]Zenerdiodessemiconductorsare
a)LightlyDoped
b)HeavilyDoped
c)MediumDoped
d)NotatallDoped

Ans:C
Answer
[5]Inavoltageseriesfeedback
a)Outputresistanceincreaseswhileinput
resistancedecreases
b)Outputandinputresistancesarereduced
c)Outputandinputresistancesare
increased
d)Outputresistancedecreaseswhileinput
resistanceincreases
Ans:B
Answer
[6]Inasaturatedtransistor
a)BEjunctionisforwardbiasedwithCB
junctionisreversebiased
b)Boththejunctionsareforwardbiased
c)BEjunctionisreversebiasedwithCB
junctionisforwardbiased
d)Boththejunctionsarereversebiased
Ans:B
Answer
[7]Foranidealnoisefreeamplifier,the
noisefigureis
a)Zero
b)ZerodB

c)Infinity
d)1dB

D)Hoppingofchargecarriersacrossthe
junction

Ans:B
Answer
[8]Whenajunctionisformedbetweena
metalandasemiconductor,thedepletion
layeris
a)Moreonthesideofthemetal
b)Equalonbothsides
c)Lessonthesideofthemetal
d)Lessonsemiconductorside

Ans:A
Answer
[12]ABJTissaidtobeoperatinginthe
saturation

region

if______
A) Both the junctions are reverse biased
B)Baseemitterjunctionisreversebiased
& basecollector junction is forward
biased
C)Baseemitterjunctionisforwardbiased
&basecollectorjunctionisreversebiased
D)Boththejunctionsareforwardbiased

Ans:C
Answer
[9]Theimpuritycommonlyusedfor
realizingthebaseregionofasiliconNPN
transistoris______
A)Gallium
B)Indium
C)Boron
D)Phosphorus
Ans:C
Answer
[10]AMOScapacitormadeusingPtype
substrateisintheaccumulationmode.The
dominantchargeinthechannelisdueto
thepresenceof
A)Holes
B)Electrons
C)Positivelychargedions
D)Negativelychargedions
Ans:B
Answer
[11]AZenerdiodeworksontheprinciple
of

______
A)Tunnelingofchargecarriersacrossthe
junction
B)

Thermionic

emission
C)Diffusionofchargecarriersacrossthe
junction

Ans:D
Answer
[13]Toobtainveryhighinput&output
impedances in a feedback amplifier, the
topology

used

is
A)

VoltageSeries
B)

CurrentSeries

C)

VoltageShunt
D)CurrentShunt
Ans:C
Answer
[14] Cut off frequency of a bipolar
transistor

____
A)Increasewiththeincreaseinbasewidth
B) Increase with the increase in emitter
width
C) Increase with the increase in the
collector

width
D)Increasewiththedecreaseinthebase
width
Ans:D
Answer

[15] Negative feedback in amplifiers

A)Improvesthesignaltonoiseratioatthe
input
B)Improvesthesignaltonoiseratioatthe
output
C)Doesnotaffectthesignaltonoiseratio
at

the

output
D)Doesnotaffectthesignaltonoiseratio
attheinput
Ans: B
Answer

Electron Devices Objective Type

Questions with Answers: part -5

ELECTRON DEVICES OBJECTIVE

TYPEQUESTIONS

1.Whenapieceofcopperandanotherof
germanium are cooled from room
temperatureto800Kthentheresistanceof

a)Eachofthemincreases
b)Eachofthemdecreases
c) Copper increases and germanium
decreases
d) Copper decreases and germanium
increases
Ans:D
Answer
2.When a sample of germanium and
silicon having same impurity density are
keptatroomtemperaturethen?
a)Bothwillhaveequalvalueofresistivity
b) Both will have equal value negative
resistivity
c)Resistivityofgermaniumwillbehigher
thanthatofsilicon

d)Resistivityofsiliconwillbehigherthan
thatofgermanium
Ans:D
Answer
3.When an RC driving point impedance
functionhaszerosats=2ands=5then
the admissible poles for the function
wouldbe?
a)s=0;s=6
b)s=0;s=3
c)s=0;s=1
d)s=3;s=4
Ans:B
Answer
4.A transistor has CE parameter as hie=
10kW,hre=20x104,hse=100,h oe=25
ms.Thehibforthistransistorwillbe
a)100W
b)99.01W
c)5mW
d)101kW
Ans:B
Answer
5.Which one of the following conditions
forZparameterswouldholdforatwoport
networkcontaininglinearbilateralpassive
circuitelements?
a)Z11=Z22
b)Z12Z21=Z11Z22
c)Z11Z12=Z22Z21
d)Z12=Z21
Ans:D
Answer
6.Atransistorisinactiveregionwhen
a)IB=IC
b)IC=IB
c)IC=IE
d)IC=IB

a)CurrentAmplifier
b)VoltageAmplifier
c)Transresistanceamplifier
d)Transconductanceamplifier

Ans:B
Answer
7.InaJFETgatesarealways?
a)Forwardbiased
b)Reversebiased
c)Unbiased
d)None
Ans:C
Answer
8.In schotty barrier diode current flows
becauseof?
a)Majoritycarriers
b)Minoritycarriers
c)Majorityandminoritycarriers
d)None
Ans:B
Answer
9.TheearlyvoltageofaBJTisVA=75V.
The minimum required collector current,
suchthattheoutputresistanceisatleastr0
=200k,is
(a)1.67mA
(b)5mA
(c)0.375mA
(d)0.75mA
Ans:C
Answer
10.TVSdiodeisusedfor
(a)

Voltage

(b)

Current

(c)

ESD

(d)Noneoftheabove

protection
protection
protection

Ans: A
Answer
[11] The amplifier is which current is
proportional to the signal voltage,
independent of source load resistance is
called

Ans:C
Answer
[12]Alternativelythecharacteristic
impedanceiscalled
a)SurgeImpedance
b)MatchImpedance
c)AlternativeImpedance
d)ReflectedImpedance
Ans:A
Answer
[13]InanRLcircuitafteraverylongtime
ofapplicationofstepvoltagethe
inductanceLisrepresentedinits
equivalentcircuitasIncorrect!
a)OpenCircuit
b)ShortCircuit
c)L/2
d)2L

Ans:B
Answer
[14]Bypassingatriangularwavethrough
adifferentiatingcircuittheoutputwave
shapeis
a)Spikes
b)Squarewave
c)Sawtooth
d)Sinewave

Ans:A
Answer
[15]Clippercircuitsareusedtoobtainany
oneofthefollowingwaveforms
a)Sharper
b)Rectified

c)FastRising
d)SmallerAmplitude
Ans:D

Electronics Devices
Objective Type Questions:
Part-6

ELECTRONICS

DEVICES
OBJECTIVETYPEQUESTIONS

[1]AZenerdiodeisusedfor
a)VoltageRegulation
b)Rectification
c)NoiseSuppression
d)BlockingA.C

b)High input impedance and low output

impedance.
c)Low input impedance and high output
impedance.
d)Low input impedance and low output
impedance.
Ans:High input impedance and low
outputimpedance.
Answer
[5]Semiconductordiodetimeconstantis
equalto
a)Thevalueofmajoritycarrierlifetime
b)Thelifetimeofminoritycarrier
c)Thediffusioncapacitancetimeconstant
d)Zero

Ans:VoltageRegulation
Answer
[2]AnSCRisadevicehaving
a)Threelayerswithfourjunctions
b)Threelayerswithtwojunctions
c)Fourlayerswiththreejunctions
d)Twolayerswiththreejunctions

Ans:Thevalueofmajoritycarrierlife
time
Answer
[6]To prepare a P type semiconducting
material the impurities to be added to
siliconare
a)Boron,Gallium
b)Arsenic,Antimony
c)Gallium,Phosphorous
d)Gallium,Arsenic

Ans:Fourlayerswiththreejunctions
Answer
[3] An amplifier has a gain of 10,000
expressedindecibelsthegainis
a)10
b)40
c)80
d)100

Ans:Boron,Gallium
Answer
[7]FETisagoodsignalchopperbecause
a)Itexhibitsnooffsetvoltageatzerodrain
current
b)Itoccupieslessspaceinintegratedform
c)Itislessnoisy
d)Ithasgothighinputimpedance

Ans:100
Answer
[4]Anemitterfollowshas
a)Highinputimpedanceandhighoutput
impedance.

Ans:Itexhibitsnooffsetvoltageatzero
draincurrent
Answer
[8]InBipolarJunctiontransistors,thetype

of configuration which will give both

voltagegainandcurrentgainis
a)CC
b)CB
c)CE
d)None
Ans:CE
Answer
[9]To increase the input resistance and
decreasetheoutputresistanceinnegative
feedback,thetypeusedis
a)VoltageShunt
b)CurrentSeries
c)VoltageSeries
d)CurrentShunt
Ans:VoltageSeries
Answer
[10]Aseriescapacitanceusedinafilter
circuitrepresents
a)LowPass
b)BandPass
c)HighPass
d)None
Ans: High-Pass
Answer
[11]Anidealpowersupplyischaracterizedby

a)Verylargeoutputresistance
b)Verysmalloutputresistance
c)Zerointernalresistance
d)Infiniteinternalresistance
Ans:C
Answer

[12]Anidealdiodeshouldhave
a)Zeroresistanceintheforwardbiasas
wellasreversebias
b)Zeroresistanceintheforwardbiasand
aninfinitelylargeresistanceinreverse
bias
c)Infinitelylargeresistanceinreversebias
d)Infinitelylargeresistanceinforwardas
wellasreversebias
Ans:B
Answer
[13]Onecoulombpersecondisequalto
one:
a)Watt
b)Joule
c)Volt
d)Ampere
Ans:D
Answer
[14]Whichofthefollowingisoneofthe
functionsperformedbyadiode?
a)Filter
b)Amplifier
c)Rectifier
d)Inverter
Ans:C
Answer
[15]Whatisthepowerfactor?
a)Ratiooftruepowertoapparentpower
b)Peakpowertimes0.707
c)SinofthephasedifferencebetweenE
andI
d)Cosofthephaseanglebetweentrue
powerandapparentpower
Ans:A