Name:

Student ID Number:
Section: 01/02/03/04/05 A/B
Lecturer: Dr Jamaludin / Dr Azni Wati
/ Dr Fazrena Azlee

College of Engineering

Department of Electronics and Communication Engineering

Test 1
SEMESTER 1, ACADEMIC YEAR 2012/2013

Subject Code
Course Title
Date
Time Allowed

:
:
:
:

EEEB273
Electronics Analysis & Design II
29 June 2012
1.5 hours

Instructions to the candidates:

1.
2.
3.
4.
5.
6.

Write your Name and Student ID number. Circle your section number.
Write all your answers using pen. DO NOT USE PENCIL except for the diagram.
ANSWER ALL QUESTIONS.
WRITE YOUR ANSWER ON THIS QUESTION PAPER.
For BJT, use VT = 26 mV where appropriate.
Use at least 4 significant numbers in all calculations.

NOTE: DO NOT OPEN THE QUESTION PAPER UNTIL INSTRUCTED TO DO SO.

GOOD LUCK!
Question No.
Marks

Total

Question 1

[40 marks]

a)

Explain clearly why are currents Ic1 and Ic2 in the basic two-transistor BJT current source
similar?
[5 marks]

b)

The values of

for the transistors in Figure 1.1 are very large.

i)

If Q1 in the Figure 1.1 is diode-connected, as shown in Figure 1.2, to provide

constant current IREF = I1 = 0.5 mA, determine the collector currents in the other
transistors, i.e. I2 and I3.
[6 marks]

ii)

Find I1 and I3 if Q2 is diode-connected to provide IREF = I2 = 0.5 mA.

[2 marks]

iii)

Find I1 and I2 if Q3 is diode-connected to provide IREF = I3 = 0.5 mA.

[2 marks]

Figure 1.1

Figure 1.2

Answers for Question 1

Q1(a)
Transistors Q1 and Q2 are matched, i.e. IS1 = IS2,
as well as other parameters eg , VA and VEB(on).
From the circuit, VBE1 = VBE2
From the equation IC = IS (exp(VBE / VT)),
if Q1 and Q2 are matched and have the same VBE, then IC1 = IC2

[1.5]
[1.5]
[1]
[1]

c)

Figure 1.3 shows a pnp current source with transistor parameters = 50, VA = 50 V and
VEB(on) = 0.7 V.
i)

Find R1 such that IREF = 1.5 mA and find the value of IO.

ii)

What is the maximum value of RC2 such that Q2 remains in the forward-active
region? Assume VEC2(min) = VEB(on).
[3 marks]

iii)

Find the change in IO, i.e. dIO, if VO = 3.5 V.

[9 marks]

iv)

Calculate the percentage change in IO for part iii) above.

[3 marks]

v)

The circuit in Figure 1.3 is modified to include a resistor RE at the emitter of Q2.
Discuss what will happen to the percentage change in IO of the current source in this
situation.
[3 marks]

[7 marks]

Answers for Question 1 (Cont.)

Q1(b)
i)

ii)

iii)

IREF = I1 = 0.5 mA
From Figure 1.2,
= 2 IREF = 2 I1
I2
= 2 (0.5m) = 1 mA
I3
= 3 IREF = 3 I1
= 3 (0.5m) = 1.5 mA

[2]
[1]
[2]
[1]

IREF = I2 = 0.5 mA
Similar with above,
I1
= I2 /2 = (0.5m)/2 = 0.25 mA
I3
= 3 I1 = 3(0.25m) = 0.75 mA

[1]
[1]

IREF = I3 = 0.5 mA
Similar with above,
I1
= I3 /3 = (0.5m)/3 = 0.167 mA
I2
= 2 I1 = 2(0.167m) = 0.33 mA

[1]
[1]

Figure 1.3

Answers for Question 1 (Cont.)

Q1c(i)

I REF

V + VEB (on) V
=
= 1.5mA
R1

[2]

5 0.7 ( 5)
= 6.22k
[2]
1.5m
I REF
1.5m
IO =
=
= 1.44mA [3]
1 + 2 / 1 + 2 / 50

R1 =

Q1c(ii)

V + VEC (min)
R2 (max) =
IO
R2 (max) =

5 0.7
= 2.986k
1.44mA

[2]
[1 ]

Q1c(iii)
dIo = dVo/Ro

[2]

Ro = ro2
ro2 = VA/Io = 50/(1.44m) = 34.72k

[1]
[2]

Vo(original) = V+ - VEC(min) = 5 - 0.7 = 4.3V

[2]

So, dVo = 4.3 V - 3.5 V = 0.8 V

[1]

So, dIo = 0.8 V/34.72 k

[1]

Q1c(iv)
% change in Io

= 0.023 mA

= dIo/Io x 100%
= 0.023m/1.44m x 100% = 1.597%

[2]
[1]

Q1c(v)
The circuit becomes the Widlar current source.
[0.5]
Widlars output impedance Ro is much larger,
[0.5]
i.e. Ro= ro2[1 +gm(r //RE)].
[0.5]
Hence, lowering the dIo.
[0.5]
So, the % change in Io will decrease,
[0.5]
thus, improving the performance of the current source in terms of stability of Io.
[0.5]

Question 2

[30 marks]

The current equation for an NMOS transistor is given by:

iD = K n (vGS VTN ) (1 + vDS )

2

Kn =

where

k n' W
2 L

Consider the basic MOSFET two-transistor current source in Figure 2. The circuit parameters
are V+ = 3 V, V- = -3 V, and IREF = 120 A; and the transistor parameters are VTN = 0.8 V and k'n =
80 A/V2.
a)

Give another name for the MOSFET current source.

b)

For the basic two-transistor NMOS current source, find the relationship between IO and
IREF.
[5 marks]

c)

Find VGS1, VGS2, VDS1, and IO at = 0 for the following transistor aspect ratios:

d)

[1 mark]

i)

(W/L)1 = (W/L)2 = 4.5

[8 marks]

ii)

(W/L)1 = 4.5 and (W/L)2 = 2.25

[8 marks]

For (W/L)1 = 4.5, (W/L)2 = 2.25 and = 0.02 V-1, calculate the change in IO if VDS2
changes by 0.75 Volts.
[8 marks]

Answers for Question 2

Q2(a)
Current mirror

Q2(b)

I REF = K n1 (VGS1 VTN 1 ) (1 + 1VDS1 )

2

I O = K n 2 (VGS 2 VTN 2 ) (1 + 2VDS 2 )

2

1
1

(W / L )1 (1 + 1VDS1 )
K (V V ) (1 + 1VDS1 )
I REF
= n1 GS1 TN 1 2
=
IO
K n 2 (VGS 2 VTN 2 ) (1 + 2VDS 2 ) (W / L) 2 (1 + 2VDS 2 )
2

I O = I REF

(W / L )2 (1 + 2VDS 2 )
(W / L)1 (1 + 1VDS1 )

Figure 2

Answers for Question 2 (Cont.)

Q2(c)(i)
2
I REF = K n1 (VGS 1 VTN 1 )

VGS 1 = VTN 1 +
VGS 1 = 0.8 +

I REF
K n1

120
80

= 0.8 + 0.8165 = 1.6165V

( 4.5)

VGS 2 = VGS 1 = VDS 1 = 1.6165V

I O = I REF

(W / L )2 (1 + 2VDS 2 )
(W / L)1 (1 + 1VDS 1 )

I O = I REF = 120 A

VGS 1 = 0.8 +

120
2

( 4.5)

= 0.8 + 0.8165 = 1.6165V

VGS 2 = VGS 1 = VDS 1 = 1.6165V

I O = I REF
I O = 120

I REF
K n1
80

1.5

Q2(c)(ii)
2
I REF = K n1 (VGS 1 VTN 1 )

VGS 1 = VTN 1 +

1.5

1.5

1.5

(W / L )2
(W / L )1
2.25
= 60 A
4.5

1.5

1.5

Q2(d)

VGS 2 = VGS1 = 1.6165V

k W
(VGS 2 VTN )2 = 80 ( 2.25)(0.8165) 2 = 60 A
2 L 2
2
1
1
1.5
rO 2 =
=
= 833k
I O (0.02)(60 )
1
RO = rO 2
dI O
(dVDS 2 )
1
=
dI O =
1
dVDS 2 RO
( RO )
(0.75)
dI O =
= 0.9003 A
1
(833k )
IO =

'
n

2.5

Question 3

a)

[30 marks]

Figure 3.1 shows a basic BJT differential pair.

Assume that Q1 and Q2 are matched pair and operating at the same temperature.
i)

ii)

By defining

v d = v BE1 v BE 2

Show that

iC 1 =

IQ
1+ e

vd / VT

and

iC 2 =

IQ
1 + e + vd / VT

[10 marks]

What happen when differential-mode input voltage (vd) is zero? Show how the
answer is obtained and explain your answer.

Answers for Question 3

[4 marks]

Figure 3.1

b)

Figure 3.2 shows the small-signal equivalent circuit for basic BJT differential pair of
Figure 3.1, where vB1 and vB2 in the Figure 3.1 are represented by 2 input signals Vb1 and
Vb2 respectively, and their input signal resistors RB in the Figure 3.2.

Figure 3.2
With small-signal analysis, it can be found that one-sided output (Vo) taken at collector of
Q2 (i.e. Vc2) is given by:

Rc
Vo =
r + RB

Vb 2 1 +

r + RB

(1 + )Ro

2+

Vb1

r + RB
(1 + )Ro

If differential-mode input is Vd = vBE1 vBE2 = (Vb1 Ve) (Vb2 Ve) = Vb1 Vb2 and an
ideal constant-current source is used to bias the BJT differential pair, show that the
differential-mode gain is

Ad =

Vo
Rc
=
Vd
2 (r + R B )

[4 marks]

c)

For the differential amplifier shown in Figure 3.1, given that iE1 = 0.4 mA and RC = 12 k .
The transistor parameters are = 100 and VA = . Assume the output resistance looking
into the constant-current source is Ro = 25 k and the input signal resistors RB are zero.
The common-mode gain is given by:

Acm =

g m RC
2(1 + )Ro
1+
r + RB

Consider a one-sided output taken at vC2. Calculate:

i)
The differential-mode gain.
ii)
The common-mode gain.
iii)
The common-mode rejection ratio (CMRR).

[4 marks]
[5 marks]
[3 marks]

Answers for Question 3 (Cont.)

Q3a(i)
1

iC1 = I S e

v BE 1 / VT

, iC 2 = I S e vBE 2 /VT

I Q = iC1 + iC 2 = I S e vBE 1 /VT + e vBE 2 /VT

iC1
I S e vBE 1 /VT
I S (e vBE 1 /VT ) / e vBE 1 /VT
1
=
=
=
v BE 1 / VT
v BE 2 / VT
v BE 1 / VT
v BE 2 / VT
v BE 1 / VT
( v BE 2 v BE 1 ) / VT
+e
+e
/e
1+ e
IQ I S e
IS e

iC 2
I S e vBE 2 /VT
I S ( e vBE 2 /VT ) / e vBE 2 /VT
1
=
=
=
v BE 1 / VT
v BE 2 / VT
v BE 1 / VT
v BE 2 / VT
v BE 2 / VT
( v BE 2 v BE 1 ) / VT
+e
+e
/e
1+ e
IQ I S e
IS e

v BE1 v BE 2 = v d
1+ e

Q3a(ii)

iC1 =
iC 2 =

Q
( v BE 2 v BE 1 ) / VT

1+ e

Q
( v BE 2 v BE 1 ) / VT

IQ
vd / VT

1+ e
IQ

1 + e + vd /VT

IQ

0 / VT

1+ e
IQ

When vd = 0, iC1 = iC2 = IQ /2

1 + e 0 /VT

IQ

iC 2 =

iC1 =

1 + e vd /VT
IQ
=
1 + e + vd /VT

IQ

IQ

1+1 2
I
I
= Q = Q
1+1 2

1
1

1
1

current IQ splits evenly between iC1 and iC2

Q3b
1

For ideal constant-current source Ro =

Vo =

RC
r + RB

Ro = Vo =
Ad =

r + RB
Vb1
(1 + )Ro
r + RB
2+
(1 + )Ro

Vb 2 1 +

RC Vb 2 Vb1
RC Vd
=
r + RB
2
r + RB
2

Vo
RC
=
Vd 2(r + RB )
1

Q3c(i)

RC

Ad =

2(r + RB )

RB = 0 Ad =

RC

2(r )

Either:

gm =
gm =

r =

Ad =

I CQ

VT

g m RC
2

i E 1 0. 4 m
=
= 15.385mA/V
VT 0.026

g m RC (15.385m )(12 k )
=
= 92.3
2
2

Ad =
Or:

VT

I CQ

RC

Ad =

2(r )

VT
i E1

(100)(0.026)
= 6.5k
0.4 m

(100)(12 k )
= 92.3
2(6.5k)

1, 0.5

1, 0.5

1, 0.5

0.5, 0.5, 0.5

Q3c(ii)

Acm =

g m RC
2(1 + )Ro
1+
r + RB

RB = 0 Acm =

gm =
r =

I CQ
VT

VT
I CQ

Acm =

=
=

g m RC
2(1 + )Ro
1+
r

i E1 0.4m
=
= 15.385mA/V
VT 0.026

VT

iE1

(100)(0.026)
= 6.5k
0.4m

g m RC
(15.385m )(12 k )
=
= 0.237
2(1 + )Ro
2(1 + 100 )( 25k )
1+
1+
6.5k
r

Q3c(iii)
CMRR =
1

Ad
92.3
=
= 389
Acm
0.237
1

Appendix: BASIC FORMULA

BJT

MOSFET

iC = I S e v BE / VT ; npn

; N MOSFET
vDS (sat) = vGS VTN

iC = I S e v EB / VT ; pnp
iC = i E = i B

iD = K n [vGS VTN ]2

i E = i B + iC

k n' W
Kn =
2 L
; P MOSFET

+1

; Small signal
= g m r
r =

VT

gm =

I CQ
I CQ
VT

V
ro = A
I CQ

vSD (sat) = vSG + VTP

iD = K p [vSG + VTP ]2
k p' W
Kp =
2 L
; Small signal

g m = 2 K n (VGSQ VTN ) = 2 K n I DQ

ro

1
I DQ