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Pass Transistor and

Transmission Gate Logic

P.K. Shetty, MCIS, Manipal

Building Logic Circuits

In designing digital systems in MOS technology


there are 2 basic ways of building logic circuits:

Switch Logic

Pass Transistor Logic


Transmission Gate Logic

Gate (Restoring) Logic

P.K. Shetty, MCIS, Manipal

Pass Transistor Logic


B

Approach is faster for smaller arrays


Takes no static current from the supply rails. Thus power
dissipation of such arrays is small since current only flows on
switching
The path through each switch is isolated from the signal
activating the switch
N transistors instead of 2N
No static power consumption
Ratioless
Bidirectional (versus undirectional)
P.K. Shetty, MCIS, Manipal

Pass Transistor - Drawbacks

Undesirable threshold voltage effects which give rise to


the loss of logic levels (Logic level degradation)
VDD

output

VDD

output

X(=0)

X (=1)
1
0

Vtn

1
0

Vtp

Pure PT logic is not regenerative - the signal gradually degrades after


passing through a number of PTs (can fix with static CMOS inverter
insertion)
P.K. Shetty, MCIS, Manipal

Complementary PT Logic (CPL)

P.K. Shetty, MCIS, Manipal

CPL Properties

Differential; so complementary data inputs and outputs


are always available (so dont need extra inverters)

Still static, since the output defining nodes are always


tied to VDD or GND through a low resistance path

Design is modular; all gates use the same topology, only


the inputs are permuted.

Simple XOR makes it attractive for structures like adders

Fast (assuming number of transistors in series is small)

Additional routing overhead for complementary signals

Still have static power dissipation problems


P.K. Shetty, MCIS, Manipal

4-input NAND in CPL

P.K. Shetty, MCIS, Manipal

CPL Full Adder

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NMOS Only PT Driving an Inverter

Vx does not pull up to VDD, but VDD VTn

Threshold voltage drop causes static power consumption (M2


may be weakly conducting forming a path from VDD to GND)

Notice VTn increase of pass transistor due to body effect (VSB)


P.K. Shetty, MCIS, Manipal

Voltage Swing of PT Driving an Inverter

Body effect large VSB at x - when pulling high (B is tied


to GND and S charged up close to VDD)
So the voltage drop is even worse
Vx = VDD - (VTn0 + ((|2f| + Vx) - |2f|))
P.K. Shetty, MCIS, Manipal

Cascaded NMOS Only PTs

Pass transistor gates should never be cascaded as on


the left

Logic on the right suffers from static power dissipation


and reduced noise margins
P.K. Shetty, MCIS, Manipal

Transmission Gate (TG) Logic

The degradation of logic levels in simple n or p switches


can be overcome by using transmission gates, comprising
an n-pass and p-pass transistors in parallel.

Transmission Gate

Symbols Used

P.K. Shetty, MCIS, Manipal

Transmission Gates (TG)

Most widely used

Full swing bidirectional switch controlled by the gate


signal C.
A = B if C = 1

P.K. Shetty, MCIS, Manipal

Resistance of TG

P.K. Shetty, MCIS, Manipal

TG Multiplexer

P.K. Shetty, MCIS, Manipal

TG XOR

P.K. Shetty, MCIS, Manipal

TG Full Adder

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Differential TG Logic

P.K. Shetty, MCIS, Manipal

Transmission Gate - Drawbacks

Occupies more area one pass transistor is replaced by


2 transistors

Requires complementary signals to drive it

P.K. Shetty, MCIS, Manipal

Gate Logic

Inverter the most basic gate


VDD
Load (pull-up)
VGG

Out
In
Driver (pull-down)

Note: The driver transistor is enhancement mode device to satisfy


I/O compatibility.
P.K. Shetty, MCIS, Manipal

Basic Single Channel Inverters


1.

If VGGVT > VDD then the load is said to be NELT (N-channel


Enhancement Load in Triode region) Needs a separate supply.

2.

If the load is maintained in the saturation region throughout, then the


load is said to be NELS (N-channel Enhancement Load in Saturation)

3.

HMOS (High performance MOS) Trademark given to Intel.


VDD

VDD

VDD

VGG

Out
In

Out
In

1. NELT

Out
In

2. NELS
P.K. Shetty, MCIS, Manipal

3. HMOS

HMOS

The load is a depletion mode transistor.

Advantages:

Good noise margin


High speed
Low power consumption
High packing density

Limitations:

It is difficult to fabricate both enhancement and depletion mode


MOSFETs together

R =

(W/L)Load

Determines the performance of the Inverter.

(W/L)Driver
P.K. Shetty, MCIS, Manipal

Realization of Basic Gates


VDD

VDD

F
F

A
C

B
C

1. NOR Gate

2. NAND Gate

P.K. Shetty, MCIS, Manipal

Power Dissipation in Single Channel


Inverters

NELS : P VDD3

NELT : P VDD3

HMOS: P = LVDD VP;


P VDD

P.K. Shetty, MCIS, Manipal

CMOS Inverter

Realized by the series connection of a p and n


device, as shown.

Vin

P.K. Shetty, MCIS, Manipal

Vout

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