Beruflich Dokumente
Kultur Dokumente
Transistors
zStructure
Silicon N-channel
MOS FET
TO-220FN
4.5
3.2
2.8
1.2
1.3
14.0
5.0
8.0
15.0
zFeatures
1) Low on-resistance.
2) Low input capacitance.
3) Excellent resistance to damage from static electricity.
12.0
10.0
0.8
(1)Gate
2.54
(2)Drain
2.54
0.75
2.6
(3)Source
zApplication
Switching
zPackaging specifications
zEquivalent circuit
Package
Type
Bulk
Drain
Code
500
Gate
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Avalanche Current
Avalanche Energy
Total Power Dissipation (TC=25C)
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP 1
IDR
IDRP 1
IS
ISP 1
IAS 2
EAS 2
PD
Tch
Tstg
Limits
200
30
10
40
10
40
10
40
10
120
35
150
55 to +150
Unit
V
V
A
A
A
A
A
A
Source
A
mJ
W
C
C
zThermal resistance
Parameter
Channel to case
Channel to ambient
Symbol
Limits
Unit
Rth(ch-c)
Rth(ch-a)
3.57
62.5
C/W
C/W
Rev.A
1/4
RDN100N20
Transistors
zElectrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
IGSS
10
V(BR) DSS
200
ID=250A, VGS=0V
IDSS
25
VDS=200V, VGS=0V
Parameter
Gate-Source Leakage
Conditions
VGS=30V, VDS=0V
VGS (th)
2.0
4.0
VDS=10V, ID=1mA
RDS (on)
0.27
0.36
ID=5A, VGS=10V
Yfs
VDS=10V, ID=5A
2.3
3.8
Input Capacitance
Ciss
543
pF
VDS=10V
Output Capacitance
Coss
193
pF
VGS=0V
Crss
64
pF
f=1MHz
td (on)
13
ns
tr
29
ns
VGS=10V
td (off)
38
ns
RL=20
tf
26
ns
RG=10
Qg
Qgs
15.0
30.0
nC
VDD=100V
5.0
nC
VGS=10V
Qgd
5.2
nC
ID=10A
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
VSD
trr
Qrr
Min.
Typ.
133
0.54
Max.
2.0
Unit
V
ns
C
Conditions
IS= 5A, VGS=0V
IDR= 10A, VGS=0V
di/dt= 100A / s
Pulsed
Rev.A
2/4
RDN100N20
Transistors
zElectrical characteristic curves
14
7V
12
10
8
6V
6
4
5V
2
1
10
100
1000
VGS=4V
4.8
4
3.2
2.4
1.6
0.8
0
50 25
25
50
75
0.4
ID=10A
0.3
4A
0.2
VGS=10V
Pulsed
0.1
0.01
0.1
10
20
25
50
75
2
1
0.5
0.2
0.05 0.1 0.2
0.5
10
Ta=25C
Pulsed
0.75
0.5
ID=10A
0.25
5A
10
15
20
25
30
0.1
0
50 25
Ta= 25C
Ta=25C
Ta=75C
Ta=125C
100
VDS=10V
Pulsed
10
FORWARD TRANSFER
ADMITTANCE :Yfs(S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) ()
0.5
VGS=10V
Pulsed
0.6
0.1
0.01
Ta= 25C
Ta=25C
Ta=75C
Ta=125C
0.7
10 12 14 16 18 20
0.8
Ta=125C
Ta=75C
Ta=25C
Ta= 25C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) ()
VDS=10V
ID=1mA
5.6
10
6.4
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) ()
0.1
10V
9V
16
VDS=10V
Pulsed
8V
10
20
100
s
0
100
Ta=25C
18 Pulsed
Operation in this
area is limited
by Ros(on)
10
10
20
TC=25C
Single Pulse
S
S
m
n
1m
0
tio
=1
ra
Pw
pe
O
DC
100
VGS=0V
Pulsed
10
Ta= 25C
Ta=25C
Ta=75C
Ta=125C
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
Rev.A
3/4
RDN100N20
Transistors
Ciss
100
Coss
Crss
10
1
0.1
10
100
20
VDS
160
140
VDD=40V
VDD=100V
VDD=160V
120
100
VDD=40V
VDD=100V
VDD=160V
40
20
0
tf
100
td (off)
tr
td (on)
10
0.1
10
100
10
0
20
15
1000
Ta=25C
di / dt=100A / s
VGS=0V
Pulsed
100
10
0.1
10
100
10
NORMALIZED TRANSIENT
THERMAL RESISTANCE : r (t)
Ta=25C
VDD=100V
VGS=10V
RQ=10
Pulsed
10
60
1000
VGS
80
1000
Ta=25C
ID=8.0A
Pulsed
180
1000
200
f=1MHz
VGS=0V
Ta=25C
Pulsed
CAPACITANCE : C (pF)
10000
1 D=1
0.5
0.2
0.1
0.1 0.05
0.02
Tc=25C
th(ch-c)(t)=r(t) =th(ch-c)
th(ch-c)=3.57C / W
0.01 0.01
Single pulse
0.001
10
PW
T
100
1m
10m
D= PW
T
100m
10
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1