Nanoscale Energy Generation Characteristics of

Piezoelectric Thin Films

1*
1
2
1
Madhu Bhaskaran , Sharath Sriram , Simon Ruffell , and Arnan Mitchell

'
Microplatforms Research Group and Platform Technologies Research Institute, School of Electrical and
2

Computer Engineering, RMIT University, GPO Box 2476, Melbourne, Victoria 3001, Australia
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian
National University, ACT 0200, Australia
*Corresponding author: Email madhu.bhaskaran@gmail.com.madhu.bhaskaran@rmit.edu.au

Abstract: The use of nanoindentation to

composition has been demonstrated to

characterize in situ the voltage and cur

produce

the

highest

piezoelectric

re

rent generation of piezoelectric thin films

sponse for a thin film on a silicon sub

is reported for the first time. Continuous

strate reported to date [2,3]. A 200 nm

thin films and lithographically patterned

platinum coating with a 20 nm titanium

nanoislands with limited interaction area

dioxide adhesion layer was used to form

have been characterised. The influence

the conductive bottom electrode metalli

of size on energy generation parameters

zation of the silicon substrates. PSZT thin

is reported, with the demonstration that

films were sputtered for duration of 2 and

nanoislands can exhibit more effective

4 hours resulting in thin films of thick

current generation.

nesses 700 nm and 1.2 jJm, respectively.

Cross-sectional transmission electron mi

Introduction: Highly efficient piezoe

croscopy analysis of PSZT thin film sam

lectric thin films, which can convert small

ples revealed the existence of a highly

mechanical movements into voltages on

ordered

the scale of silicon transistor logic, could

columnar

grain

structure,

as

shown in Fig. 1(a). Piezoelectric nanois

enable micro- and nano-electronic circuits

lands were defined by a combination of

which can scavenge their power from

electron beam lithography and lift-off pat

their environment [1]. Energy harvesting

terning [ Fig. 1(b)].

using piezoelectrics has immense poten

tial for integration with electronics, to ef

Hysitron

NanoECR

indenter

fectively power low power micro- and

was used for performing in situ electrical

nano-devices. The use of thin films has

measurements during indentation. Small

greater

potential

for

large

scale

pro

forces from f.lN to mN were applied using

cessing and readily embraced practical

a nanoindenter, which was configured to

applications. To enable better device de

perform electrical measurements using a

signs and identification of optimal film ge

conductive tip (doped diamond Berkovich

ometry, accurate nanoscale characteriza

tip). A variety of force curves, with varia

tion of voltage and current generation,

bles of force amplitude and frequency

and identification of geometry parameters

were utilised, with the resulting piezoelec

dominating voltage and current density

tric voltage generation studied.

generated are critical.

Results

and

Discussions:

Forces

This work will report on the in situ

were applied to the samples under test

electrical measurements carried out dur

and resulting voltages were measured.

ing

indentation,

Increasing the force level from 0.1 mN to

comparing voltage and current generation

1 mN resulted in voltage increase from 4

nanoscale

mechanical

from continuous piezoelectric thin films

mV to 10 mV. Forces from 0.1-2.5 mN

and piezoelectric nano-islands.

resulted in voltages of 4-23 mV, with the

Experimental

Details:

linear dependence of generated voltage

Piezoelectric

on applied force.

thin film samples were synthesized by R F

voltage generation for both the 200 nm

magnetron sputter deposition of PSZT of

composition
( Pbo.92Sro.08)(Zro.65Tio.35)03

and 400 nm islands were very similar ( - 4

and -22 mV for 0.1 and 2.5 m N of force)

onto metalized silicon substrates. This

978-1-4244-7333-5/101$26.00 2010

IEEE

Measured values for

149

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(a)
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-100

10

Time(s)

Time

(C)

(s)

(d)

Fig. 1. (a) Cross-section image of nano-structured piezoelectric thin film. (b) Scanning electron mi
crograph of piezoelectric nanoislands. (c) The proportional increase in the voltage produced as
force is increased. (d) Current transients produced under an applied force cycle.

and matched those for the 700 nm PSZT

from area dependence of voltage and

thin films. This demonstrated that the pla

transient current generation show prom

nar geometry had no influence on the

ise for use of micro-fabricated piezoelec

voltage generation.

tric thin films structures in energy harvest

ing devices.

Figure 1(d) shows an example of

one set of current transients. The value of

Acknowledgements

current generated varies from 40 pA up to

This work has been supported by an Australian

Project
Discovery
Research
Council
(DP1092717).

a maximum of -180 pA depending on the

sample under study and the force func
tion. This value was dependent on both

References

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150