Fund. Of. Electronics Ch02 Diodes

Fundamentals Of Electronic Circuits
Chapter 2:
Semiconductors, PN Junction and

Di d
Diodes
Associate Prof. Dr. Soliman Mahmoud
Faculty of Engineering
Electrical and Computer Engineering Department
solimanm@sharjah.ac.ae
1
Chapter(2)
Semiconductors PN Junction and
Semiconductors,
Diodes
Objectives and outline:
1. Conductivity of Solids
2. Semiconductors
3 pn junction
3.
j
ti
4. Diodes
5. Diode applications

Electronics and Electrical Engineering Department
Fund. Of Electronic
Circuits
1. Conductivity
y of Solids
Conductivityy is the abilityy of a material to carryy
an electrical current.
Basically there are 3 ranges of conductivity:
Basically,
1. Good conductor: very low resistance (metals)
2.
conductor
(or
insulator):
very high
2 Poor
P
d t
(
i
l t )
hi h
resistance (ceramics, oxides)
3.Semiconductor: somewhere in between
(silicon, germanium, gallium arsenide)

Fund. Of Electronic
Circuits
2. Semiconductors
A semiconductor is an element with a
valence of four. This means an isolated
atom
t
off the
th material
t i l has
h four
f
electrons
l t
i
in
its valence orbit.
Conductors have 1 valence electrons,
4
Semiconductors
have
4
valence
electrons and Insulators have 8 valence
electrons.
electrons
Fund. Of Electronic
Circuits
2.1 Silicon atom

The most widely
used semiconductor
material is Silicon.
Silicon
An isolated atom has
14 protons
t
and
d 14
electrons as shown:
Valence orbit with 4 electrons

Fund. Of Electronic
Circuits
2.2 intrinsic (p
(pure)) semiconductors
properties:
No impurities only covalent
bonds.
All bonds complete at 0K.
Part off electrons from
f
covalent
bonds is released at higher
temperatures.
temperatures
valence bonds model

Fund. Of Electronic
Circuits
2.3 Doping
p g of semiconductors
One way
y to increase conductivity
y of a semiconductor
is by doping.
Doping
This means adding impurity atoms to an intrinsic crystal to alter its
electrical conductivity. A doped semiconductor is called an
extrinsic semiconductor.
some materials form an excess of electrons and produce an ntype semiconductor
some materials form an excess of holes and p
produce a p-type
yp
semiconductor
both n-type and p-type materials have much greater conductivity
than pure semiconductors
this is extrinsic conduction.

Fund. Of Electronic
Circuits
n-type
yp semiconductors
To increase the number of free electrons,
electrons
pentavalent atoms are added to the pure
silicon in the molten state.
state
Pentavalent atoms include 5 electrons in
the valence orbit( ex: Phosphorus atoms).
Because these materials will donate an
extra electron to the silicon crystal, they
are often
impurities.
ft referred
f
d to
t as Donor
D
i
iti
Fund. Of Electronic
Circuits
n-type
yp semiconductors ((contd.))

Fund. Of Electronic
Circuits
p-type
p
yp semiconductors
By using a trivalent impurity, one whose
y 3 valence electrons
atoms have only
(ex:Boron).

Fund. Of Electronic
Circuits
10
p-type semiconductors (contd.)

By using a trivalent impurity, one whose atoms have
only 3 valence electrons (ex:Boron).

Fund. Of Electronic
Circuits
11
3. pn Junction
When p-type
type and n-type
type materials are
joined, this forms a pn junction
the majority charge carriers on
each side diffuse across the
junction where they combine with
( d remove)) the
(and
th charge
h
carriers
i
off
the opposite polarity.
hence, around the junction there
are few free charge carriers and we
have a depletion layer (also called
h
l
)
a space-charge
layer).
The diffusion of positive charge in one
direction and negative charge in the
other prod
produces
ces a charge imbalance
this results in a potential barrier
across the junction.
Fund. Of Electronic
Circuits
12
3.1 Isolated p
pn Junction
Potential barrier
the barrier opposes the flow
off majority
j it charge
h
carriers
i
and only a small number
have enough energy to
surmount it.
it
This generates a small
diffusion current.
the barrier encourages the
flow of minority carriers and
any that come close to it will
be swept over
This generates a small
drift current.
for an isolated junction
th
these
t
two
currents
t mustt
balance each other and the
net current is zero.
Fund. Of Electronic
Circuits
13
3.2 Forward bias p

pn Junctions
Forward bias
if the p-type side is made
positive with respect to the
n-type side the height of the
barrier is reduced
more majority charge carriers
have sufficient energy to
surmount it
the diffusion current therefore
increases while the drift
current remains the same
there is thus a net current flow
across the junction which
increases with the applied
voltage.

Fund. Of Electronic
Circuits
14
3.3 Reverse bias p

pn Junction
Reverse bias
if the p-type
type side is made negative
with
respect
to
the
n-type side the height of the
barrier is increased
the number of majority charge
carriers that have sufficient energy
to surmount it rapidly decreases
the
th
diff i
diffusion
currentt therefore
th f
vanishes while the drift current
remains the same
thus the only current is a small
leakage current caused by the
(approximately constant) drift
current
the leakage current is usually
negligible (a few nA).
Fund. Of Electronic
Circuits
15
3.4 p
pn Junction Currents
Forward and reverse currents
pn junction current is given approximately by
V
I = I s exp
1
VT
where I is the current,

current (VT= KT/e) is the thermal voltage
e is the electronic charge, V is the applied voltage, k is
Boltzmannss constant, T is the absolute temperature
Boltzmann
and (Greek letter eta) is a constant in the range 1 to
2 determined by the junction material
for most purposes we can assume =1.

Fund. Of Electronic
Circuits
16
3.4 p
pn Junction Currents (contd.)
(
)
Thus,
eV
1
I Is exp
kT
at room temperature e/kT ~ 40 V1
If V > + 0.1 V,
eV
I Is exp
= Is ( exp 40V )
kT
If V < 0.1 V,
I I s (0 1) = I s
IS is the reverse saturation current.
Fund. Of Electronic
Circuits
17
4. Diodes
An ideal
A
id l diode
di d passes electricity
l t i it iin one di
direction
ti
but not in the other.

Fund. Of Electronic
Circuits
18
4. Diodes (contd.)
(
)
One application
pp
of diodes is in rectification
the example below shows a half-wave rectifier.
In practice, no real diode has ideal characteristics

but semiconductor pn junctions make good
diodes.
Fund. Of Electronic
Circuits
19
4.1 Semiconductor diodes

Forward and reverse currents

Fund. Of Electronic
Circuits
20
4.1 Silicon diodes

Turn-on and breakdown voltages for a silicon
device

Fund. Of Electronic
Circuits
21
4.2 Diode equivalent

q
circuits
Sometimes we represent
p
a diode by
y an
equivalent circuit. Models have different levels of
sophistication.
p

Fund. Of Electronic
Circuits
22
4.3 Diode circuit analysis

y
The non-linear behaviour of diodes makes analysis
y
difficult consider this simple circuit.
E = VD +VR
Applying Kirchoffs voltage law
= VD + IR
From the diode equation
I = IS ( exp 40VD )
simultaneous
equations.
To find I we need to solve

these two

Fund. Of Electronic
Circuits
23

y
((contd.))
One approach is through the use of a load line.
E = VD + VR
= VD + IR

Fund. Of Electronic
Circuits
24

y
((contd.))
Load lines can also be used with equivalent
circuits
however, this is rarely done, since if an equivalent

circuit is used, the circuit can normally be analysed
directly, without resorting to a graphical method.
Fund. Of Electronic
Circuits
25

y
E VON
I=
R

E VON
I=
R + rON
Fund. Of Electronic
Circuits
26
4.5 Zener breakdown diode: Symbol

and equivalent circuit
Circuit symbol for a

zener diode.

Model for the zener diode.
Fund. Of Electronic
Circuits
27
5.Diode circuits
Half-wave
rectifier
(AC DC)
peak output
voltage is equal to
th peakk input
the
i
t
voltage minus the
conduction voltage
of the diode
reservoir capacitor
used to produce a
steadier output
output.
Fund. Of Electronic
Circuits
28
5. Diode circuits (contd.)

(
)
F ll
Full-wave
rectifier
tifi
use of a diode
b id reduces
bridge
d
the time for which
the capacitor has
to maintain the
output
p voltage
g
and thus reduce
the ripple voltage.

Fund. Of Electronic
Circuits
29

Fund. Of. Electronics Ch02 Diodes

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Fundamentals Of Electronic Circuits

Semiconductors, PN Junction and

Associate Prof. Dr. Soliman Mahmoud

Associate Prof. Dr. Soliman Mahmoud

2.1 Silicon atom

Valence orbit with 4 electrons

Associate Prof. Dr. Soliman Mahmoud

Associate Prof. Dr. Soliman Mahmoud

Associate Prof. Dr. Soliman Mahmoud

Associate Prof. Dr. Soliman Mahmoud

p-type semiconductors (contd.)

Associate Prof. Dr. Soliman Mahmoud

3.2 Forward bias p

Associate Prof. Dr. Soliman Mahmoud

3.3 Reverse bias p

where I is the current,

Associate Prof. Dr. Soliman Mahmoud

at room temperature e/kT ~ 40 V1

Associate Prof. Dr. Soliman Mahmoud

In practice, no real diode has ideal characteristics

4.1 Semiconductor diodes

Associate Prof. Dr. Soliman Mahmoud

4.1 Silicon diodes

Associate Prof. Dr. Soliman Mahmoud

4.2 Diode equivalent

Associate Prof. Dr. Soliman Mahmoud

4.3 Diode circuit analysis

From the diode equation

To find I we need to solve

Associate Prof. Dr. Soliman Mahmoud

4.4 Diode circuit analysis

Associate Prof. Dr. Soliman Mahmoud

4.4 Diode circuit analysis

however, this is rarely done, since if an equivalent

4.4 Diode circuit analysis

Associate Prof. Dr. Soliman Mahmoud

4.5 Zener breakdown diode: Symbol

Circuit symbol for a

Associate Prof. Dr. Soliman Mahmoud

Model for the zener diode.

5. Diode circuits (contd.)

Associate Prof. Dr. Soliman Mahmoud

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