Beruflich Dokumente
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Type A
Type B
w
h
h
h
air filled
Type C
w
Type D
I. I NTRODUCTION
Perfectly Matched Layer (PML) like boundary conditions [1], [2]
have been used for layered media transmission line termination
with [3] or without [4] field component splitting.
x m
x A
(1)
PML conductivity profile [1] yields poor absorber performance, if
thin PML absorbers (up to four elements thickness) are used for
fast computation.
w
a
2a
a
Shielded Microstrip Line
Fig. 1. Transmission line cross sections for discussion of layered media absorbers.
Within a one-dimensional equivalent circuit model, parallel plate Thick lines denote perfectly conducting boundaries (PEC walls), dotted lines magtransmission line absorbers are discussed for homogeneous and netic (PMC) walls. Hatches show dielectric filling. The shielded microstrip line
layered media (Section II). In Section III an analytical method is (Type D) is used for numerical validation (Section IV) only. In the numerical tests,
the substrates permittivity is r d = 12.9.
developed to obtain a discrete conductivity profile suitable for termination in these cases. Section IV discusses the numerical per- with c
8
0 2 997 10 m s, and the characteristic field impedance
formance of a realistic 3D microstrip load in comparison to stan- Z 120.
F
0
dard conductivity profiles.
For the Type B rsp. C transmission lines it is easily seen, that
II. A N
P LATE
To analyze layered media absorbing boundary conditions, partially filled Parallel Plate Transmission lines sketched in Fig. 1
are a good starting point.
For the air filled transmission line (Type A) the line parameters
are
L0
C0
h ZF
0
w c0
w 1
h ZF
0 c 0
Z0
1 Y0
(2)
(3)
L0
C0
(4)
LB
CB
YB
LC
CC
L0
2
1 r
d C0
YC
2L0
r
d
C
1 r
d 0
CB
LB
CC
LC
(5)
(6)
r
d Y0 Y0 eff
B
2 1 r
d
(7)
(8)
(9)
! 2 1 r
d Y0 Y0 eff
C
(10)
where r
d is the dielectric constant of the partial filling.
The Type C (Type B) arrangement can be looked at as a series
(parallel) circuit of an air-filled and a dielectric filled homoge-
It is seen, that
1
2
C
p n r
q n r
Fig. 2. Equivalent circuit for one FDTD cell within a homogeneously filled Parallel
Plate Transmission line including electric and magnetic losses.
c r
(23)
d r
(24)
0
n 1
0
h
w
w
h
(12)
(26)
(27)
(13)
(14)
For arbitrary quasi TEM-mode transmission lines on layered media, it is well known, that for low frequencies
If
G
fn eff
B Y0
fn eff
C Y0
III. C OMPUTATION
arY0
B L b Z0
AC
Yn
in
B
Yn
in
C
(11)
w
h
h
m
w
(15)
eff
min max
r
r
(28)
Y0 f r
q 1 r
p 1 r
r
r
1
b1
p r q r
a r q 1 r b q r
Y0
q
p
p r
q r
Yin
1
1
(17)
(18)
a 1 r
(19)
1 All
Y0 r
c x
0
n 1
d x
0
1 2
g x dx
(30)
max
r
(22)
Ierr
c
Ierr
d
(31)
(32)
R EFERENCES
[1] J.-P. Berenger, A perfectly matched layer for the absorption of electromagnetic waves, J. Comput. Phys., vol. 114, no. 1, pp. 185200, 1994.
[2] D. S. Katz, E. T. Thiele, and A. Taflove, Validation and extension to three
dimensions of the Berenger PML absorbing boundary condition for FD-TD
meshes, IEEE Microwave Guided Wave Lett., vol. 4, pp. 268270, Aug.
1994.
[3] A. Bahr, A. Lauer, and I. Wolff, Application of the PML absorbing boundary
condition to the FDTD analysis of microwave circuits, in IEEE MTT-S Int.
Microwave Symp., vol. 1, (Orlando, FL), pp. 2730, 1995.
[4] A. Lauer and I. Wolff, Stable and efficient ABCs for graded mesh FDTD,
in IEEE MTT-S Int. Microwave Symp., vol. 2, (Baltimore, MD), pp. 461464,
June 1998.
p 1 x
q 1 x
q 1 x
p x
a 1 x
b
1
p x
q 1 x
q x
p x
(33)
(34)
Figure 5 shows the static reflection coefficient analytically calculated using the one dimensional equivalent circuit model of two
cell thick EML rsp. PML absorbers in comparison to FDTD results. The agreement is excellent, which offers the opportunity to
look at the static absorber characteristics in a way, that the equivalent circuit calculates eff from eff using a rational approximation. Furthermore it is seen, that EML performs much better
than PML if eff 1.
Type B, eff
Type D, eff
-20
-40
Type A
6 95
7 58
-60
It is seen, that the EML very much improves layered media absorption.
-80
-100
-120
-140
-160
4
6
8
Absorber thickness n in cells
10
12
Fig. 3. Reflection coefficient of Enhanced PML Absorbers for different test structures.
V. C ONCLUSIONS
0 in dB
0 in dB
0
Type B, eff
Type D, eff
-20
-40
Type A
6 95
7 58
-60
-80
-100
-120
-140
-160
4
6
8
Absorber thickness n in cells
10
12
Fig. 4. Reflection coefficient of PML absorbers with quadratic conductivity profile for different test structures. The conductivity profile was scaled for maximum
4 The relatively bad freespace (Type A) performance of quadratic profile PML absorption in free space.
absorbers at a thickness of two and three cells is beacuse the the PML loss algorithm [1] becomes inaccurate in handling big loss coefficients, e.g. not t 1.
5 Scaling to best e.g
eff 7 absorption is not possible, because the absorbers
losses then become too big to be handled by the PML loss algorithm [1].
-20
-40
0 in dB
-60
-80
-100
-25
-120
-140
0
4
6
8
10
Effective permittivity eff
12
14
Fig. 5. Static reflection coefficients analytically calculated using the one dimensional equivalent circuit model with the parameter eff in comparison to Type
A,Type B and Type D simulation results.
10
-30
-35
-40
-45
-50
-55
-60
Conductivity profile C x
-65
1
Type D, PML 2
Type D, EML 2
0
0.005
0.01
Normalized frequency f
eff
c0
0.015
0.02
Fig. 7. Dynamic reflection coefficient of two cell PML rsp. EML absorbers for the
Type D reference structure.
0.1
PML 2
PML 4
EML 2
EML 4
0.01
0.5
1.5
1
2
Position x in cells
2.5
3.5