Substrate Integrated

Waveguide Filters
Xiao-Ping Chen and Ke Wu

ecause of the inherent structural flexibility in coupling design and topological arrangement, substrate integrated waveguide (SIW) filter topologies enjoy
better out-of-band frequency selectivity and/or in-band phase response with
the allocation of finite transmission zeros (FTZs). In the first article in this
series, basic design rules and fundamental electrical characteristics have been
presented that indicate the superior performances of SIW structures and their filter applications. Advanced design techniques and innovative structure features have recently
been reported in a large number of publications. They include cross couplings realized by
physical and nonphysical paths and SIW filters with dual-mode or multimode techniques.
Miniaturization-enabled techniques including low-temperature cofired ceramic (LTCC)
technology have been developed and applied to the development of SIW filters to reduce
the size for low-gigahertz applications using nontransverse electromagnetic (non-TEM)
modes. Wideband SIW filters, multiband SIW filters, and reconfigurable SIW filters have
also been reported by various research groups. This article reviews these advanced and
innovative SIW filter technologies, and related examples are presented and discussed.

Xiao-Ping Chen and Ke Wu (ke.wu@polymtl.ca) are with the Poly-Grames Research Center, Department
of Electrical Engineering, Ecole Polytechnique (University of Montreal), Center for Radiofrequency
Electronics Research of Quebec, Montreal, Quebec H3T 1J4, Canada.
Digital Object Identifier 10.1109/MMM.2014.2332886
Date of publication: 8 September 2014

image licensed by ingram publishing

September/October 2014

1527-3342/142014IEEE

121

Source

Load
5
4
: Nonresonant Node
(NRN)
: Resonator

(a)

(b)

S21 and S11 (dB)

-10
-20
-30
-40
-50
-60
-70

Simulation S11

Measurement S21

Simulation S21

Measurement S11

30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
(c)

Group Delay (ns)

3.0
Simulation

2.5

Measurement

2.0
1.5
1.0
0.5
0.0

34.2 34.5 34.8 35.1 35.4 35.7 36.0

Frequency (GHz)
(d)

Figure 1. The (a) geometric configuration and (b) structural

topology. (c) and (d) The frequency responses of a sixth-order
self-equalized pseudoelliptical SIW filter [2].

SIW Filters with FTZs

Filters with FTZs located on the imaginary axis or symmetrically on the real axis or in all four quadrants of
the complex frequency plane are known to have better out-of-band frequency selectivity and/or in-band
phase response. The FTZs on the imaginary axis of the
complex frequency plane will lead to high selectivity
performance and excellent stopband characteristics,
while FTZs on the real axis or in all the four quadrants
are used for achieving a linear phase response in the
passband. There are two methods that have been used
to produce FTZs. The first method makes use of cross
couplings with nonphysical couplings by higher-order
modes or physical coupling structures to produce multiple paths for signal flow. If two different signal paths

122

yield the same magnitude but opposite phase, they

would cancel each other out, and an FTZ on the imaginary axis is then produced. However, positive and negative couplings must be simultaneously realized for the
opposite phases. On the other hand, if two signal paths
generate the same magnitude and phase, an FTZ on the
real axis is then produced. In this case, all of the couplings can have the same sign.
The second method involves FTZs on the imaginary axis that can be extracted to realize bandstop
resonators. In an extracted-pole filter, it is not necessary to simultaneously realize both types of coupling
because the FTZ on the imaginary axis is produced by
the bandstop resonator that can also produce a transmission pole in the passband. In addition, every FTZ
can be tuned independently by changing the resonant
frequency of the bandstop resonator.
SIW technology, a part of the family of substrate
integrated circuits, is very suitable for the realization
of the above-mentioned filter topologies due to its
inherent flexibility for the implementation of multiple
paths and phase correlations and controls for FTZs. A
fourth-order, linear-phase filter with two FTZs that
are symmetrically located along the real axis was proposed and realized by a single-layer printed circuit
board (PCB) process based on an SIW platform in [1].
In this case, all of the direct coupling and cross coupling between the first SIW cavity and fourth SIW cavity were realized by a section of SIW evanescent mode
for positive coupling. The variation of in-band group
time delay of the filter was smaller than 0.5% over 50%
of the passband around the center frequency. Multilayered topologies provide more freedom in the design of
coupling paths and control mechanisms.
To obtain FTZs on both the imaginary axis and the
real axis using only magnetic coupling, [2] presented
a sixth-order Ka-band self-equalized pseudoelliptical SIW filter, the geometric configuration, structural
topology, and frequency responses of which are all
shown in Figure 1. Two bandstop SIW cavity resonators, 1 and 6, are responsible for the generation of
two FTZs on the imaginary axis, while the cross coupling between SIW cavity resonators 2 and 5 are for
two FTZs that are symmetrically located on the real
axis. The filter was synthesized and designed using an
extracted-pole technique [3] and was fabricated on a
low-cost single-layer PCB substrate.
On the single-layer SIW platform, where only magnetic iris coupling can be realized, it is a rather challenging task to simultaneously design positive and
negative coupling networks for the generation of FTZs
on the imaginary axis. A novel structure using a balanced microstrip line with a pair of metalized via-holes
placed between transverse electric (TE)101-mode-based
SIW cavity resonators 1 and 4 to invert the phase of signal was presented for the first time in [4]. A mixed coupling, including both positive and negative couplings,

September/October 2014

September/October 2014

R4

R3

R1

R2

Positive Coupling
Negative Coupling
(a)

(b)

0
-10
S21 and S11 (dB)

which cancel each other out, is produced. The structure

can be optimized to ensure that the negative coupling
is stronger than its positive counterpart, and a small
amount of the negative coupling can be canceled out
by tuning the width of the magnetic postwall iris. This
structure is well suited for SIW implementation and
provides accurate negative coupling with an inductive
postwall iris. Figure 2 shows the geometric configuration, structural topology, and frequency response of a
fourth-order, cross-coupled SIW filter with the negative
coupling structure; coupling between the input and the
output may be noted.
In [5] and [6], a balanced microstrip line with a pair
of metalized via-holes was replaced by a section of
grounded coplanar waveguide (CPW) for the realization of electrical coupling. To avoid a spurious resonance induced by the grounded CPW line that was
too close to the passband, the coupling coefficient was
controlled by the linewidth rather than the line length.
Another method to realize negative coupling on the
single-layer SIW platform with only a magnetic iris is
to use a higher-order resonance mode of the SIW cavity
resonator [7][10], [13]. If the magnetic iris is properly
located, the TE102 resonant mode can be used to obtain
the 180 phase change, which is equivalent to the generation of negative coupling in other signal paths with
a TE101 resonant mode.
In [13], a Ka-band fourth-order boxlike filter with
one transmission zero on the left or right side of the
passband was presented. The TE102 mode resonance
excited in one SIW cavity is used for the transformation between 0 and 180 phases of coupling on a single-layer SIW, where only a magnetic postwall iris can
be implemented for positive coupling. Figure 3 shows
the geometric configuration, structural topology, and
frequency responses of the proposed SIW filter. Note
that the FTZ can move from one side to the other of
the passband only when the self-coupling is changed
without the change of intercoupling. The measured
in-band return loss of the two filter prototypes with
a center frequency of 35 GHz and absolute bandwidth
of 1.3 GHz is below -14 dB, while the measured minimum in-band insertion loss is about 1.2 dB.
Cross coupling can also be realized by a nonphysical
method, in which the signal path is generated by a spurious resonant mode. If the main resonance and spurious resonance are properly chosen, all of the coupling
paths can be realized by a magnetic iris, enabling the
generation of FTZs [11]. More importantly, nonphysical
cross coupling can be tuned not only by the size of the
coupling structure but also by the resonant frequencies
of spurious resonance. Therefore, the FTZs can be made
near the passband for generating a high selectivity or far
away from the passband for achieving a wide stopband.
In [12], an oversized SIW TE101/TE301 cavity or TE101/
TE201 cavity was used as a basic unit that may be called
singlettorealizeadirect-coupledSIWfilterfor

-20
-30
-40
-50
Full-Wave Simulation
Measurement

-60
-70
17

18

19

20

21

22

23

24

Frequency (GHz)
(c)

Figure 2. The (a) geometric configuration, (b) structural

topology, and (c) frequency responses of a fourth-order
cross-coupled SIW filter with negative coupling structure
and sourceload coupling [4].
Ka-band satellite ground terminal receiver applications. Every singlet produces a transmission pole in the
desired passband of the filter and a transmission zero
at the defined location for yielding sufficient stopband
attenuation. Figure 4 shows photographs and responses
of two different fourth-order SIW filters, one using three
oversized TE101/TE301 SIW cavities and one oversized
TE101/TE201 SIW cavity and the other using two oversized TE101/TE301 SIW cavities and two oversized TE101/
TE201 SIW cavities. The Ka-band of 29.530 GHz needs
to be isolated from the K-band passband operation for
satellite ground terminal applications. The second filter
exhibited a measured in-band insertion loss of 0.8 dB, a
stopband attenuation (rejection) better than 40 dB over
a wide frequency range of 23.9431.48 GHz, while the
attenuation (rejection) in the targeted transmit band of
29.530 GHz is better than 52 dB. Note that to effectively
measure the stopband rejection, appropriately placed
absorbers are used to reduce the spurious coupling
between two launching pins when a universal test fixture (Wiltron 3680K) is used. In Figure 4(b), the difference between the measured S 11 and the simulated S 11 at
27.530GHz may be caused by the absorbers.
Because of the inherent structural flexibility of SIW
technology, some cross-coupled filter topologies that
are difficult or even impossible to physically realize
in metallic waveguide can be easily implemented on
an SIW platform [13][16]. In [13], two Ka-band fourthorder SIW filters were proposed with two transmission

123

sion zeros on the right side of the passband operate

with the TE101 mode. Both filters are directly excited by
a 50-X conductor-backed CPW with coupling slots so
that a thick substrate can be used for the loss reduction related to the top and bottom metals. In [14], an
SIW transversal bandpass filter using a modified doublet with high selectivity was presented. The modified
doublet contains two resonators that are not coupled to
each other. The source and load are directly coupled to
generate two transmission zeros. By changing the sign

zeros on the left or right side of the passband, respectively, due to the diagonal coupling. All the coupling
between resonators is realized by magnetic postwall
irises that provide positive coupling. For the filter of
two transmission zeros on the left side of the passband,
the TE101 mode is used for the first or third SIW cavity resonator, while the TE102 resonant mode is excited
in the second or fourth SIW cavity for the equivalent
realization of a negative coupling in signal path 13.
All of the resonators in the filter with two transmis-

50-X Conductor-Backed
Coplanar Waveguide
(CBCPW)

Metalized Via Holes

Load

Source
Substrate

50-X CBCPW

Metal
(a)

(b)

-1.0
Measured S11

-10

-1.5
-2.0

Simulated S11

-2.5
-3.0
.0
.6
.2
.8
.4
.0
34 34 34 35 35 36

Measured S21

-20

Simulated S21

S21 and S11 (dB)

-30

-40

-50

-60

(continued)
-70

-80
30

32

34

36

38

40

Frequency (GHz)
(c)

Figure 3. The (a) geometric configuration, (b) structural topology, and (c) frequency responses of the first prototyped fourth-order
cross-coupled SIW filter with negative coupling structure and sourceload coupling [13]. (d) The frequency responses of the second
prototyped fourth-order cross-coupled SIW filter with negative coupling structure and sourceload coupling [13].
(continued)

124

September/October 2014

of one coupling coefficient and detuning the resonators

in the modified doublet, two transmission zeros can be
simultaneously placed below or above the passband,
or one can be placed below and the other above the
passband. Figure 5 shows the geometric configuration
and structural topology as well as the simulated and
measured frequency responses. Since the first electrical resonance is realized by the TE201 mode, both the
coupling between the source and the second resonator
and the sourceload coupling are negative. One FTZ
is placed below and the other above the passband. In
[15], a sixth-order SIW filter composed of two cascaded
extended doublets was proposed. Each extended doublet consists of a main doublet with an additional resonator grown in one of the branches. The source and
the load are coupled to both branches of the doublet to
generate the required two transmission zeros. The two
consecutive building blocks are coupled by an inverter
between two nonresonating nodes (NRNs). In [16], four
FTZs were generated in a third-order cross-coupled
SIW filter using a frequency-variant mixed coupling
between the source and the load.

Dual-Mode SIW Filters

Dual-mode filters can be made in various technologies
including planar microstrip line and metallic waveguide schemes. The primary reason for developing
such filters is to reduce the filter size by at least 50%
compared with cascaded resonator filters while making transmission loss as low as possible. Based on the
all-inductive dual-mode filters presented in [17] and
[18], a dual-mode SIW filter directly excited by a 50-X
microstrip line was proposed for the first time in [19].
This work was then extended in [20][22] by the analysis and synthesis of a schematic topology.
An oversized SIW cavity with two degenerate modes,
TE102 and TE201, is used as the basic building block with
an inline input/output structure. Two consecutive basic
blocks are coupled by a section of evanescent SIW. The
source/load is simultaneously coupled with two electrical resonances within the first/last oversized SIW
cavity. Each electrical resonance in one oversized SIW
cavity is coupled with two electrical resonances in the
other oversized SIW cavity without intercavity coupling. An inductive post placed where the maximum

.0
-1
.5
-1
.0
-2
.5
-2
.0
-3 34.0 34.4 34.8 35.2 35.6 36.0

-10

-20

Measured S11
Simulated S11
Measured S21
Simulated S21

S21 and S11 (dB)

-30

-40

-50

-60

-70

-80
30

32

34

36

38

40

Frequency (GHz)
(d)

Figure 3. (continued) The (a) geometric configuration, (b) structural topology, and (c) frequency responses of the first prototyped
fourth-order cross-coupled SIW filter with negative coupling structure and sourceload coupling [13]. (d) The frequency responses
of the second prototyped fourth-order cross-coupled SIW filter with negative coupling structure and sourceload coupling [13].

September/October 2014

125

R1
S

(a)

(b)

-20
-30
-40
-50
Simulated S11
Simulated S21
Simulated S11
Simulated S21

-60
-70
-80

S Parameters (dB)

-10
S11 and S21 (dB)

L
R2
Positive Coupling
Negative Coupling

-20
-30
-40
-50
-60
12

-90
15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 35.0
Frequency (GHz)

S11 Measured
S21 Measured
S11 Simulated
S21 Simulated

-10

13

14

15

16

17

18

Frequency (GHz)
(c)

(a)

Figure 5. The (a) geometric configuration, (b) structural

topology, and (c) frequency responses of a fourth-order
cross-coupled SIW filter with negative coupling structure
and sourceload coupling [14].

0
-10

Degenerate Mode
Spurious Resonant Mode

-30
(a)

-40
-50
-70
-80
-90

FTZ on Left Side of the

Passband
FTZ on Right Side of the
Passband

Simulated S11
Simulated S21
Simulated S11
Simulated S21

15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 35.0

Frequency (GHz)

(b)

WS21S

S11 and S21 (dB)

-20

-60

(b)

Figure 4. Photographs and responses of two different

fourth-order SIW filters with nonphysical cross coupling
using (a) three oversized TE101/TE301 SIW cavities and one
oversized TE101/TE201 SIW cavity and (b) two oversized
TE101/TE301 SIW cavities and two oversized TE101/TE201 SIW
cavities [12].
electric field is located can be used to tune the resonant
frequencies of degenerate modes. This can be used to
compensate for fabrication error and tolerance. Therefore, an inline SIW filter with pseudoelliptical response
can be obtained. Although the metallic post or slot line
can be used to perturb the field distribution of the two
degenerate modes for the generation of intracoupling

126

Frequency
(c)

Figure 6. The (a) geometric configuration, (b) structural

topology, and (c) frequency responses of a basic building block
for a dual-mode SIW circular cavity filter [26].
[23][25], no additional FTZs can be obtained due to the
intracoupling. In addition, nonphysical cross coupling
for additional FTZs can be generated when the input/
output is perpendicular to each other [11]. Note that
there is no coupling between the source and the load.

September/October 2014

Wideband SIW Filters

Wideband filters have been designed and realized with
TEM mode transmission lines due to their dispersionless,
broadband, and single-mode performance. As mentioned
earlier, SIW structures support only the transmission or
propagation of TE modes that makes the design of wideband SIW filters easier and more feasible without the
design consideration of parasitic TM modes. To increase
the coupling for wideband applications, a zigzag filter
topology with 28% bandwidth for European ultrawideband (UWB) applications was proposed in [30]. Additional
controllable cross-coupling networks are realized by both
physical and nonphysical methods to achieve sharper
responses and more flexible tuning of the transmission
zeros. A fast and accurate full-wave electromagnetic analysis method based on the boundary integral-resonant
mode expansion technique was proposed and developed
to design the filter. Figure 8 shows the geometric configuration, structural topology, and frequency response of the
filter. With the consideration that a realizable coupling
is limited by the physical size of a coupling structure,

September/October 2014

Input Port

Metal 1
Substrate 1
Metal 2
Substrate 2

Cavity

Metal 3
Cavity

Substrate 3
Metal 4
Substrate 4
Metal 5

Output Port
S

(a)
1

(b)
0
-5
-10
S21 and S11 (dB)

Another family of dual-mode SIW filters is based on

the SIW circular cavity where there are two polarizationdegenerated modes TM110 [26][28]. Similar to the case
of an SIW rectangular cavity, an oversized SIW circular
cavity with two polarization degenerate modes TM110 is
used as the basic building block; the geometric configuration, structural topology, and frequency responses of
which are shown in Figure 6. Note that the FTZs distant
from the passband are generated due to the nonphysical
cross coupling of spurious resonant modes [11]. The FTZ
near the passband can move from one side to the other
side of the passband when the resonant frequencies of
degenerate modes are changed. This can be realized by
changing the cavity from a circular shape to an elliptical shape with more design freedom. However, the FTZ
distant from the passband is always on the right side, and
its position can be changed by changing the input/output coupling angle a [11]. The basic building block can be
cascaded to design higher-order pseudoelliptical filters.
In [29], a canonical folded topology was realized using
an LTCC process based on two dual-mode SIW circular
cavities that are excited by a 50-X microstrip through
coupling slots. Intercoupling is implemented by a crossshaped slot. Figure 7 shows the geometric configuration, structural topology, and frequency responses. Note
that the source/load is coupled with only one electrical
resonance and that each electrical resonance in one dualmode SIW circular cavity is coupled with only one electrical resonance in the other dual-mode SIW cavity through
the cross-shaped slot. By letting two pairs of coupling
vias used for coupling inside the cavity perpendicular to
each other, the field of the first and fourth resonators can
have opposite direction. Therefore, negative nonadjacent
coupling between the first and fourth resonators can be
produced in the proposed filter structure.

-15
-20
-25
-30
-35
-40
-45

Measurement
EM Simulation

-50
28.0 28.5 29.0 29.5 30.0 30.5 31.0 31.5 32.0
Frequency (GHz)
(c)

Figure 7. The (a) geometric configuration, (b) structural

topology, and (c) frequency responses of a dual-mode SIW
circular cavity filter based on an LTCC process [29].
an alternative method to design a wideband SIW filter
is to use the high-pass characteristic of an SIW and the
bandstop behavior of planar periodic structures, such as
uniplanar compact photonic bandgap, uniplanar compact
defect ground structure, and CPW periodic structures [31].
Very compact wideband filters with a relative bandwidth
of more than 50% can be obtained through the inherent
integration of an SIW and a planar structure within the
same processing technique and on the same substrate. Figure9 shows the geometric configuration and responses
of the SIW-CPW filter. In addition, an SIW also can be
cascaded with a planar low-pass filter for the generation
of a UWB frequency response from 3.1 to 10.6 GHz [33].

127

WSS(dB)

very useful for the case where the

passbands are close to each other.
Multiband filters with Chebyshev or pseudoelliptical frequency responses were proposed on
an SIW platform in [34] for the
(a)
first time. Bandstop SIW cavity resonators are used here to
2
4
6
generate the transmission zeros
to split the single passband into
two or three subpassbands. The
S
3
5
L
1
filters, consisting of the invert(b)
er-coupled resonator sections
with side-by-side horizontally
0
oriented SIW cavities coupled
by postwall irises, are analyti-10
cally synthesized from the genWS11S
eralized low-pass prototypes
-20
having Chebyshev or quasielliptical responses. The filters
-30
are directly excited using 50-X
WS12S
microstrip lines. Figure10 shows
-40
the geometric configuration and
frequency responses over the
Open Decoupling Walls (Simulated)
K-band of the dual-/triple-band
-50
Open Decoupling Walls (Measured)
SIW filters. In [35] and [36], the
Closed
Decoupling
Walls
(Simulated)
inverter-coupled resonator sec-60
Closed Decoupling Walls (Measured)
tion was modified for a novel
triple-passband filter. Multiple
-70
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
resonant modes in an SIW cavFrequency (GHz)
ity produced by an LTCC process
(c)
were utilized to generate multiband responses that are distant
Figure 8. The (a) geometric configuration, (b) structural topology, and (c) frequency
from each other [37], [38]. The freresponses of a wideband SIW filter in zigzag topology [30].
quency bands are controlled by
adequately choosing an appropriate
geometric
shape
for the SIW cavity resonators.
Notch bands for the removal of interferences from the
The desired coupling coefficients and external quality
existing systems can be generated using bandstop resofactors for both bands are realized by the positions of
nators [32] or open stubs [33].
open slots and feeding probes.

Multiband SIW Filters

Two types of techniques are often used to generate dualpassband or multiband responses for multifunctional
system applications. The first method is to use novel
resonant structures with a great degree of design freedom, such as stepped-impedance or dual-behavior resonators, because their two dominant resonances coincide
with the two center frequencies of two designated passbands by adjusting their geometric parameters. The resonators are placed so that appropriate coupling in the
structure can be established. This method is very suitable for the case where the passbands are distant from
each other in frequency.
The other method is to use transmission zeros that
are produced by cross-coupling or bandstop resonators
to split a single passband into dual passbands or multibands based on a single-filter circuit. This method is

128

Reconfigurable SIW Filters

Reconfigurable filters are essential for future multifunctional radio and radar systems such as smart and cognitive radio and radar techniques across the commercial,
defense, and civilian sectors to control and better use the
RF spectrum. These techniques can eliminate interference while preserving good dynamic range under any
signal receiving condition. Tunable resonators are a crucial building block in the design and realization of tunable RF and microwave filters. In [39], an original tuning
solution was proposed based on the insertion of vertical
capacitive posts integrated within SIW cavities. One extremity of each post is connected to a floating metallic
ring, located on the substrate supporting the SIW cavity. Frequency agility is obtained once the metallic ring
is connected to the ground plane by short-circuiting

September/October 2014

(a)

(b)

0
-10

Measured Results

Simulated Results

-10

dB

-20

S21 and S11 (dB)

(a)

-20
-30
-40
-50
-60

-30

-70

-40

-80

Measurement
Simulation
18

19

-50

20
21
22
Frequency (GHz)

23

24

23

24

(c)

-60
0

-70
6

10 12 14 16
Frequency (GHz)
(b)

18

20

Figure 9. The (a) geometric configuration and (b)

frequency response of a wideband SIW-CPW filter [31].

S21 and S11 (dB)

-10
-20
-30
-40
-50
Measurement
Simulation

-60
-70

the corresponding annular slot using surface actuators.

Such a combination of cavity and planar activation leads
to reconfigurable filters with high Q values and simplified tuning control conditions. More capacitive posts can
be used to increase frequency states.
A novel tunable second-order SIW filter was implemented on three-layer Rogers RT/duroid substrate using
p-i-n diode switching elements [40]; other switching
techniques such as RF microelectromechanical systems (MEMS) could be used. The tuning mechanism
is obtained by connecting or disconnecting perturbing
via posts to/from the top metal layer of the cavity. The
tuning location where subsequent perturbing vias are
placed is empirically analyzed, and an optimum tuning
location is obtained. Figure 11 shows the geometric configuration and measured responses of a reconfigurable
SIW filter. The filter provides six states ranging from
1.55 to 2.0 GHz (25% tuning). The fractional bandwidth
ranges from 2.3% to 3.0% with an insertion loss less than
5.4 dB and a return loss greater than 14 dB over the entire
tuning range.
Based on the proposed combline resonator in SIW technology [41], a low-loss tunable resonator based on a combline SIW cavity loaded with gallium arsenide varactor is
presented [42]. The 2.63.1-GHz tunable center frequency
was obtained with a Qu between 180 and 70, a capacitance
variation between 0.25 and 1.25 pF. A two-pole filter has

September/October 2014

-80

18

19

20
21
22
Frequency (GHz)
(d)

Figure 10. The geometric configuration of (a) dual-band

and (b) triple-band SIW filters as well as (c) and (d) their
frequency responses [34].
been demonstrated on a low-cost substrate showing a
tunable center frequency between 2.64 and 2.88 GHz
with 1.273.63-dB insertion loss across the tuning range
[43]. The IIP3 of +24dBm has been measured for a bias
voltage of 5 V and a two-tone separation 3 f of 50 kHz.
The 1-dB compression point of the filter at the same bias
voltage is only +10 dBm. In [44], switchable planar p-i-n
diodes are used to realize the digitally tuned SIW filter.
The center frequencies of three different states are 6.17,
5.83, and 5.58GHz, with insertion loss varying between
1.6 and 2.4 dB. The equal ripple fractional bandwidth is
reduced from 3.6% to 2.6% along the tuning range.
Another method to tune the SIW cavity is to embed
a frequency agile material into an SIW cavity. A specific switchable post constructed using plasma material
(argon) was introduced in the SIW cavity [45]. The plasma
conductivity can reach a high value when the medium is
excited by strong dc voltage (on state). Whereas for the
off state, the plasma behaves like a vacuum. Therefore,

129

RF In
Layer 1

P'
Through
Vias

(a)

(a)

Layer 1
Layer 2

PIN Diode +
Biasing

P
Top Via
Through Via
Wall Via

Layer 3

Wall Via

P'
RT/Duroid
0.635 mm
RT/Duroid
2.54 mm

(b)

-15
-20
-25
-30

-10

S11 (Simulated)
S21 (Simulated)
S11 (Measured)
S21 (Measured)

-35
-40
-45
50

52

54

56 58 60 62 64
Frequency (GHz)
(c)

66

68

70

Figure 12. The (a) geometric configuration, (b) structural

topology, and (c) response of an SIW filter based on LTCC [67].

-20
-30
-40
S11
S21

-50
1.4

1.6
1.8
2.0
Frequency (GHz)
(c)

2.2

Figure 11. (a) and (b) The geometric configuration and (c)
measured frequency response of a reconfigurable SIW filter [40].
plasma acts as a switchable metallic post that can change
the resonant frequency of an SIW cavity.
In [46], a dielectric post exhibiting dispersion provides
electromagnetic agility and adaptability for the filter by
introducing a vertical material perturbation. Low-loss
dispersion of nanoparticles with variable concentrations
is used as the enabling mechanism for electromagnetic
agility and adaptation. The post diameter determines
the amount of perturbation achieved. However, it is still
a very challenging task to simultaneously tune the resonant frequency of an SIW cavity and coupling between
two SIW cavities for constant absolute bandwidth or
relative bandwidth during the tuning process.

Arts of Miniaturization for SIW Filters

An SIW filter is still bulky for low-microwave-frequency
applications because of their strong frequency dependence and non-TEM mode operation. Various techniques
have been proposed to reduce the size of an SIW filter,
such as SIW filters loaded with complementary split-ring
resonators [47][51], folded SIW filters [52][55], combline

130

(b)

-10
S-Parameters (dB)

RF Out

-5

Layer 3
(GND)

Wall Vias

4
+
+ 3

Layer 2
Top Vias

1
+
2

SIW filters [41], [56], [57], and so-called half-mode SIW

filters [58][60]. However, these techniques may deteriorate the Q u of an SIW resonator, which leads to high inband insertion loss of the filter that, in turn, limits the
applications of SIW filters in engineering. This is because
the field singularity known for conventional planar lines
may partially appear in the filter circuits.
An effective method to miniaturize an SIW filter is
to utilize low-loss substrates that have high permittivity, such as alumina ceramic substrates, by using the
miniature hybrid microwave integrated circuits process
or the photoimageable process [61][64] or on a silicon
substrate by means of the MEMS process [65]. The lowloss high-permittivity substrates can be found in common fabrication techniques such as alumina ceramic
substrates using the miniature hybrid microwave integrated circuits process or the photoimageable process
[61][64]. However, the best method for the miniaturization of SIW filters uses multilayer circuit processes with
three-dimensional integration features. LTCC processes
with the substrates of high permittivity and a nearly
arbitrary number of layers are cost effective, and, most
importantly, almost all of the filter topologies can be
realized with great freedom through the LTCC process.
The first SIW filter based on a multilayer PCB substrate was proposed in [66]. A C-band fourth-order SIW
filter with a canonical folded topology for an elliptical
frequency response was designed and fabricated. The
required negative coupling between resonators 1 and 4
is easily realized by adding the square slots at the center of the SIW cavities, while inductive postwall irises

September/October 2014

Port 1

Port 2
Slot

Metallic Vias

Top Metal Layer

Resonator 4
Middle Metal Layer

Resonator 1
Resonator 2

Resonator 3
Bottom Metal Layer
(a)

1
-

+
2 + 3
(b)

S-Parameters (dB)

-10
-20

Conclusions

-30
-40
-50

Measured
Simulated

-60
-70
13.5

ration and structural topology and frequency response

over the Ku-band.
Along with the realization of SIW filters based on
different topologies using the LTCC process [70][76],
techniques for further size reduction of SIW filters were
studied. These techniques include dual-mode SIW filters on LTCC [77], [78], folded SIW filters on LTCC [79]
[81], and evanescent-mode SIW filters on LTCC [82][86].
Although the evanescent-mode SIW filter has a size
reduction of more than 50% and a higher spectral separation to the next spurious passband, the in-band insertion loss is increased because the Qu value is reduced.
The filter is very sensitive to fabrication tolerances,
especially to the compression or shrinking effects of the
LTCC layers before and during the cofiring, because the
electric field is concentrated above the capacitive stubs
in only one thin LTCC layer [86].

14.0

14.5 15.0 15.5

Frequency (GHz)
(c)

16.0

16.5

Figure 13. The (a) geometric configuration, (b) structural

topology, and (c) response of an SIW filter based on LTCC [69].
for positive coupling are made between two SIW cavities in the same layer. Rectangular slots at the edge of
the cavity are made for positive coupling between two
SIW cavities in the different layers. The filter area is
reduced by one-half with a vertically stacked SIW cavity using a multilayer PCB process. The input and output microstrip lines are located in different layers, and
via transitions are required for practical measurement
and applications. To assign the input/output structures to the top layer, a novel fourth-order SIW filter for
60-GHz applications was proposed for fabrication in an
LTCC process [67], [68]. Resonators 1 and 4 are situated
in the same layer, and the negative coupling between
them is realized by a mixed coupling structure. The filter, whose geometric configuration, structural topology,
and frequency response are shown in Figure 12, has a
very good performance at the 60-GHz band.
Another topology with a pseudoelliptical response
was realized using an SIW triangular cavity in [69]. In
this article, a negative coupling between resonators 1
and 2 on different layers is achieved using a circular slot
at the center of the two cavities. All the other couplings
are positive. A slot on the top metal layer is introduced
to suppress the two higher spurious modes. The filter
presents a 65% size reduction in comparison with its planar counterpart. Figure 13 shows its geometric configu-

September/October 2014

Advanced and innovative SIW filter structures are

reviewed and discussed in the second of this three-part
series with regard to various types of structure realizations and design approaches. Physical or nonphysical
coupling can be used for the realization of cross coupling in SIW filters with FTZs. Circular or square cavities can be easily designed for dual-mode SIW filters.
Techniques for wideband or multiband SIW filters were
also discussed together with reconfigurable SIW filter
platforms. Loaded SIW cavity and folded SIW cavity
can be used to reduce the filter size for low-gigahertz
applications. LTCC technology may present an effective
method to miniaturize SIW filters with good Qu values.

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