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Technische Information / Technical Information

IGBT-Module
IGBT-Modules

BSM15GP120

Elektrische Eigenschaften / Electrical properties


Hchstzulssige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rckw. Spitzensperrspannung
repetitive peak reverse voltage

VRRM

1600

Durchlastrom Grenzeffektivwert
RMS forward current per chip

I FRMSM

40

Id

15

I FSM

300

Dauergleichstrom
DC forward current

TC = 80C

Stostrom Grenzwert

tP = 10 ms, Tvj =

surge forward current

tP = 10 ms, Tvj = 150C

Grenzlastintegral

tP = 10 ms, Tvj =

I t - value

25C

230

450

As

260

As

VCES

1200

I C,nom.

15

IC

35

I CRM

30

Ptot

180

VGES

+/- 20V

IF

15

I FRM

30

I 2t

125

A2s

VCES

1200

TC = 80 C

I C,nom.

10

TC = 25 C

IC

20

25C

I t

tP = 10 ms, Tvj = 150C

2
2

Transistor Wechselrichter/ Transistor Inverter


Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current

Tc = 80 C
TC = 25 C

Periodischer Kollektor Spitzenstrom


repetitive peak collector current

tP = 1 ms,

Gesamt-Verlustleistung
total power dissipation

TC = 25C

TC = 80 C

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current

Tc = 80 C

Periodischer Spitzenstrom
repetitive peak forw. current

tP = 1 ms

Grenzlastintegral
I 2t - value

VR = 0V, tp = 10ms, Tvj = 125C

Transistor Brems-Chopper/ Transistor Brake-Chopper


Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current

tP = 1 ms, TC = 80C

I CRM

20

Gesamt-Verlustleistung
total power dissipation

TC = 25C

Ptot

100

VGES

+/- 20V

IF

10

I FRM

20

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current

Tc = 80 C

Periodischer Spitzenstrom
repetitive peak forw. current

tP = 1 ms

prepared by: Andreas Schulz

date of publication:29.03.2001

approved by: Robert Severin

revision: 6

1(11)
DB-PIM-10 (2).xls

Technische Information / Technical Information


IGBT-Module
IGBT-Modules

BSM15GP120

Modul Isolation/ Module Isolation


Isolations-Prfspannung
insulation test voltage

RMS, f = 50 Hz, t = 1 min.


NTC connected to Baseplate

VISOL

2,5

kV

Elektrische Eigenschaften / Electrical properties


Charakteristische Werte / Characteristic values
min.

typ.

max.

VF

0,95

Tvj = 150C

V(TO)

0,8

Ersatzwiderstand
slope resistance

Tvj = 150C

rT

10,5

Sperrstrom
reverse current

Tvj = 150C,

IR

mA

Modul Leitungswiderstand, Anschlsse-Chip


lead resistance, terminals-chip

TC = 25C

RAA'+CC'

min.

typ.

max.

2,2

2,55

2,5

VGE(TO)

4,5

5,5

6,5

Cies

1,0

nF

Diode Gleichrichter/ Diode Rectifier


Durchlaspannung
forward voltage

Tvj = 150C,

Schleusenspannung
threshold voltage

IF = 15 A

VR = 1600 V

Transistor Wechselrichter/ Transistor Inverter


VGE = 15V, Tvj = 25C,
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 125C,

IC =

15 A

IC =

15 A

IC =

0,6 mA

Gate-Schwellenspannung
gate threshold voltage

VCE = VGE,

Eingangskapazitt
input capacitance

f = 1MHz, Tvj = 25C


VCE = 25 V, VGE = 0 V

Kollektor-Emitter Reststrom
collector-emitter cut-off current

VGE = 0V,

Tvj = 25C, VCE =

1200 V

VGE = 0V,

Tvj =125C, VCE =

1200 V

Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse

Tvj = 25C,

VCE = 0V, VGE =20V, Tvj =25C


I C = INenn,

VCC =

47 Ohm

VGE = 15V, Tvj = 125C, RG =

47 Ohm

I C = INenn,

600 V

VGE = 15V, Tvj = 25C, RG =

47 Ohm

VGE = 15V, Tvj = 125C, RG =

47 Ohm

I C = INenn,

600 V

VCC =

VGE = 15V, Tvj = 25C, RG =

47 Ohm

VGE = 15V, Tvj = 125C, RG =

47 Ohm

I C = INenn,

600 V

VCC =

VGE = 15V, Tvj = 25C, RG =

47 Ohm

VGE = 15V, Tvj = 125C, RG =

47 Ohm

I C = INenn,

600 V

VCC =

VGE = 15V, Tvj = 125C, RG =


I C = INenn,

75 nH

VCC =

600 V

LS =
Kurzschluverhalten
SC Data

47 Ohm

LS =
VGE = 15V, Tvj = 125C, RG =

I CES

1,0

500

1,2

mA

I GES

300

nA

td,on

65

ns

66

ns

65

ns

55

ns

600 V

VGE = 15V, Tvj = 25C, RG =


VCC =

VCE sat

47 Ohm

tr

td,off

370

ns

410

ns

50

ns

55

ns

Eon

mWs

Eoff

1,7

mWs

I SC

90

tf

75 nH

tP 10s, VGE 15V,

RG =

47 Ohm

Tvj125C,

VCC =

720 V

dI/dt =

1200 A/s

2(11)
DB-PIM-10 (2).xls

Technische Information / Technical Information


IGBT-Module
IGBT-Modules

BSM15GP120

Elektrische Eigenschaften / Electrical properties


Charakteristische Werte / Characteristic values
Modulinduktivitt
stray inductance module
Modul Leitungswiderstand, Anschlsse-Chip
lead resistance, terminals-chip

TC = 25C

Diode Wechselrichter/ Diode Inverter


Durchlaspannung
forward voltage

VGE = 0V, Tvj = 25C,

IF =

15 A

VGE = 0V, Tvj = 125C,

IF =

15 A

Rckstromspitze
peak reverse recovery current
Sperrverzgerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy

I F=INenn,

- diF/dt =

600 V

VGE = -10V, Tvj = 125C, VR =

600 V

I F=INenn,

1000A/s

VGE = -10V, Tvj = 25C, VR =

600 V

VGE = -10V, Tvj = 125C, VR =

600 V

I F=INenn,

1000A/s

- diF/dt =

VGE = -10V, Tvj = 25C, VR =

600 V

VGE = -10V, Tvj = 125C, VR =

600 V

Transistor Brems-Chopper/ Transistor Brake-Chopper


VGE = 15V, Tvj = 25C,
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 125C,

IC =

10,0 A

IC =

10,0 A

IC =

0,35mA

Gate-Schwellenspannung
gate threshold voltage

VCE = VGE,

Eingangskapazitt
input capacitance

f = 1MHz, Tvj = 25C


VCE = 25 V, VGE = 0 V

Kollektor-Emitter Reststrom
collector-emitter cut-off current

VGE = 0V, Tvj = 25C, VCE =

1200 V

VGE = 0V, Tvj = 125C, VCE =

1200 V

Gate-Emitter Reststrom
gate-emitter leakage current

Tvj = 25C,

VCE = 0V, VGE = 20V, Tvj = 25C

Diode Brems-Chopper/ Diode Brake-Chopper


Tvj = 25C,
Durchlaspannung
forward voltage
Tvj = 125C,

10,0 A

IF =

10,0 A

TC = 25C

Abweichung von R100


deviation of R100

TC = 100C, R100 = 493

Verlustleistung
power dissipation

TC = 25C

B-Wert
B-value

R2 = R1 exp [B(1/T2 - 1/T1)]

max.

LCE

100

nH

RCC'+EE'

11

min.

typ.

max.

1,75

2,2

1,6

22

25

1,6

As

3,2

As

0,5

mWs

1,2

mWs

min.

typ.

max.

2,4

2,85

2,75

VGE(TO)

4,5

5,5

6,5

Cies

0,6

nF

VF

I RM

Qr

ERQ

VCE sat

I CES

0,5

500

0,8

mA

300

nA

min.

typ.

max.

2,2

2,55

2,1

min.

typ.

max.

R25

R/R

-5

20

mW

I GES

IF =

NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance

typ.

1000A/s

VGE = -10V, Tvj = 25C, VR =


- diF/dt =

min.

VF

P25
B25/50

3375

3(11)
DB-PIM-10 (2).xls

Technische Information / Technical Information


IGBT-Module
IGBT-Modules

BSM15GP120

Thermische Eigenschaften / Thermal properties


Innerer Wrmewiderstand
thermal resistance, junction to case

RthJC

Gleichr. Diode/ Rectif. Diode

min.

typ.

max.

K/W

Trans. Wechsr./ Trans. Inverter

0,7

K/W

Diode Wechsr./ Diode Inverter

1,2

K/W

Trans. Bremse/ Trans. Brake

1,2

K/W

Diode Bremse/ Diode Brake

2,3

K/W

0,08

K/W

0,04

K/W

0,08

K/W

bergangs-Wrmewiderstand

Gleichr. Diode/ Rectif. Diode

Paste=1W/m*K

thermal resistance, case to heatsink

Trans. Wechsr./ Trans. Inverter

grease=1W/m*K

RthCK

Diode Wechsr./ Diode Inverter


Hchstzulssige Sperrschichttemperatur
maximum junction temperature

Tvj

150

Betriebstemperatur
operation temperature

Top

-40

125

Lagertemperatur
storage temperature

Tstg

-40

125

Mechanische Eigenschaften / Mechanical properties


Innere Isolation
internal insulation

Al2O3

CTI
comperative tracking index

225
M

Anzugsdrehmoment f. mech. Befestigung


mounting torque

Nm

10%

Gewicht
weight

180

4(11)
DB-PIM-10 (2).xls

Technische Information / Technical Information


IGBT-Module
IGBT-Modules

BSM15GP120

Ausgangskennlinienfeld Wechselr. (typisch)

IC = f (VCE)

Output characteristic Inverter (typical)

VGE = 15 V

30

25
Tj = 25C
Tj = 125C

IC [A]

20

15

10

0
0

0,5

1,5

2,5

3,5

4,5

4,5

VCE [V]

Ausgangskennlinienfeld Wechselr. (typisch)

IC = f (VCE)

Output characteristic Inverter (typical)

Tvj = 125C

30
VGE = 17V
25

VGE = 15V
VGE = 13V
VGE = 11V

IC [A]

20

VGE = 9V

15

10

0
0

0,5

1,5

2,5

3,5

VCE [V]

5(11)
DB-PIM-10 (2).xls

Technische Information / Technical Information


IGBT-Module
IGBT-Modules

BSM15GP120

bertragungscharakteristik Wechselr. (typisch)

IC = f (VGE)

Transfer characteristic Inverter (typical)

VCE = 20 V

30

25

Tj = 25C

20

IC [A]

Tj = 125C
15

10

0
0

10

12

14

VGE [V]

Durchlakennlinie der Freilaufdiode Wechselr. (typisch)


Forward characteristic of FWD Inverter (typical)

IF = f (VF)

30

25

Tj = 25C

20

IF [A]

Tj = 125C
15

10

0
0

0,5

1,5

2,5

VF [V]

6(11)
DB-PIM-10 (2).xls

Technische Information / Technical Information


IGBT-Module
IGBT-Modules

BSM15GP120

Schaltverluste Wechselr. (typisch)

Eon = f (IC), Eoff = f (IC), Erec = f (IC)

Switching losses Inverter (typical)

Tj = 125C,

VGE = 15 V,

VCC =

RGon = RGoff =

600 V
47 Ohm

Eon

Eoff
Erec

E [mWs]

0
0

10

15

20

25

30

35

IC [A]

Schaltverluste Wechselr. (typisch)


Switching losses Inverter (typical)

Eon = f (RG), Eoff = f (RG), Erec = f (RG)


Tj = 125C, VGE = +-15 V ,

Ic = Inenn ,

VCC =

600 V

3
Eon
Eoff

2,5

Erec

E [mWs]

1,5

0,5

0
0

10

20

30

40

50

60

70

80

90

RG [ ]

7(11)
DB-PIM-10 (2).xls

Technische Information / Technical Information


IGBT-Module
IGBT-Modules

BSM15GP120

Transienter Wrmewiderstand Wechselr.


Transient thermal impedance Inverter

ZthJC = f (t)

10

Zth-IGBT

ZthJC [K/W]

Zth-FWD
1

0,1

0,01
0,001

0,01

0,1

10

t [s]

Sicherer Arbeitsbereich Wechselr. (RBSOA)

IC = f (VCE)

Reverse bias save operating area Inverter (RBSOA)

Tvj = 125C, VGE = 15V, RG =

47 Ohm

35

30

25
IC,Modul
IC,Chip

IC [A]

20

15

10

0
0

200

400

600

800

1000

1200

1400

VCE [V]

8(11)
DB-PIM-10 (2).xls

Technische Information / Technical Information


IGBT-Module
IGBT-Modules

BSM15GP120

Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)


Output characteristic brake-chopper-IGBT (typical)

IC = f (VCE)
VGE = 15 V

20
18
16

Tj = 25C
Tj = 125C

14

IC [A]

12
10
8
6
4
2
0
0

0,5

1,5

2,5

3,5

4,5

VCE [V]

Durchlakennlinie der Brems-Chopper-Diode (typisch) IF = f (VF)


Forward characteristic of brake-chopper-FWD (typical)
20
18
16
14

Tj = 25C
Tj = 125C

IF [A]

12
10
8
6
4
2
0
0

0,5

1,5

2,5

VF [V]

9(11)
DB-PIM-10 (2).xls

Technische Information / Technical Information


IGBT-Module
IGBT-Modules

BSM15GP120

Durchlakennlinie der Gleichrichterdiode (typisch)


Forward characteristic of Rectifier Diode (typical)

IF = f (VF)

30

25

20

Tj = 25C

IF [A]

Tj = 150C
15

10

0
0

0,2

0,4

0,6

0,8

1,2

1,4

1,6

120

140

160

VF [V]

NTC- Temperaturkennlinie (typisch)


R = f (T)
NTC- temperature characteristic (typical)
100000

Rtyp

R[ ]

10000

1000

100
0

20

40

60

80

100

TC [C]

10(11)
DB-PIM-10 (2).xls

Technische Information / Technical Information


IGBT-Module
IGBT-Modules

BSM15GP120

Schaltplan/ Circuit diagram


21

22
20

23

19

7
14

18

13

24

4
12

16
17

15

NTC

11
10

Gehuseabmessungen/ Package outlines

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine


Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is


valid in combination with the belonging technical notes.

11(11)
DB-PIM-10 (2).xls

This datasheet has been downloaded from:


www.DatasheetCatalog.com
Datasheets for electronic components.