SPP03N60S5

Cool MOS Power Transistor

Feature
New revolutionary high voltage technology
Ultra low gate charge

VDS

600

RDS(on)

1.4

ID

3.2

PG-TO220

Periodic avalanche rated

Extreme dv/dt rated

Ultra low effective capacitances

Improved transconductance

23

P-TO220-3-1

Type

Package

Ordering Code

SPP03N60S5

PG-TO220

Q67040-S4184

Marking
03N60S5

Maximum Ratings
Parameter

Symbol

Continuous drain current

ID

Value

Unit
A

TC = 25 C

3.2

TC = 100 C

Pulsed drain current, tp limited by Tjmax

I D puls

5.7

Avalanche energy, single pulse

EAS

100

Avalanche energy, repetitive tAR limited by Tjmax1) EAR

0.2

mJ

I D = 2.4 A, VDD = 50 V
I D = 3.2 A, VDD = 50 V

Avalanche current, repetitive tAR limited by Tjmax I AR

Gate source voltage
VGS

3.2

20

Gate source voltage AC (f >1Hz)

VGS

30

Power dissipation, T C = 25C

Ptot

38

Operating and storage temperature

T j , T stg

-55... +150

Rev. 2.7

Page 1

2009-11-26

SPP03N60S5
Maximum Ratings
Parameter

Symbol

Drain Source voltage slope

dv/dt

Value

Unit

20

V/ns

Values

Unit

V DS = 480 V, ID = 3.2 A, Tj = 125 C

Thermal Characteristics
Parameter

Symbol
min.

typ.

max.

Thermal resistance, junction - case

RthJC

3.3

Thermal resistance, junction - ambient, leaded

RthJA

62

SMD version, device on PCB:

RthJA

@ min. footprint

62

@ 6 cm2 cooling area 2)

35

260

Soldering temperature, wavesoldering

Tsold

K/W

1.6 mm (0.063 in.) from case for 10s 3)

Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter

Symbol

Conditions

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

Drain-Source avalanche

V(BR)DS VGS=0V, ID=3.2A

Values

Unit

min.

typ.

max.

600

700

3.5

4.5

5.5

breakdown voltage
Gate threshold voltage

VGS(th)

ID=135, VGS=V DS

Zero gate voltage drain current

IDSS

VDS=600V, VGS=0V,

Gate-source leakage current

IGSS

Drain-source on-state resistance RDS(on)

Rev. 2.7

Tj=25C,

0.5

Tj=150C

70

VGS=20V, VDS=0V

100

VGS=10V, ID=2A,
Tj=25C

1.26

1.4

Tj=150C

3.4

Page 2

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2009-11-26

SPP03N60S5
Electrical Characteristics , at Tj = 25 C, unless otherwise specified
Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

1.8

S
pF

Characteristics
Transconductance

g fs

V DS2*I D*RDS(on)max,
ID=2A

Input capacitance

Ciss

V GS=0V, V DS=25V,

420

Output capacitance

Coss

f=1MHz

150

Reverse transfer capacitance

Crss

3.6

Turn-on delay time

t d(on)

V DD=350V, V GS=0/10V,

35

Rise time

tr

ID=3.2A, RG=20

25

Turn-off delay time

t d(off)

40

Fall time

tf

15

22.5

3.5

12.4

16

ns
-

Gate Charge Characteristics

Gate to source charge

Qgs

Gate to drain charge

Qgd

Gate charge total

Qg

VDD=350V, ID=3.2A

VDD=350V, ID=3.2A,

nC

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=350V, ID=3.2A

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
3Soldering temperature for TO-263: 220C, reflow

Rev. 2.7

Page 3

2009-11-26

SPP03N60S5
Electrical Characteristics, at Tj = 25 C, unless otherwise specified
Symbol

Parameter
Inverse diode continuous

IS

Conditions
TC=25C

Values

Unit

min.

typ.

max.

3.2

5.7

forward current
Inverse diode direct current,

ISM

pulsed
Inverse diode forward voltage

VSD

VGS=0V, IF=IS

1.2

Reverse recovery time

trr

VR=350V, IF =IS ,

1000

1700

ns

Reverse recovery charge

Qrr

di F/dt=100A/s

2.3

Typical Transient Thermal Characteristics

Value

Symbol

Unit

Symbol

Value

typ.

Unit

typ.

Thermal resistance

Thermal capacitance

R th1

0.054

R th2

Cth1

0.00005232

0.103

Cth2

0.0002034

R th3

0.178

Cth3

0.0002963

R th4

0.757

Cth4

0.0009103

R th5

0.682

Cth5

0.002084

R th6

0.202

Cth6

0.024

Tj

K/W

R th1

R th,n

T case

Ws/K

E xternal H eatsink

P tot (t)
C th1

C th2

C th,n
T am b

Rev. 2.7

Page 4

2009-11-26

SPP03N60S5
1 Power dissipation

2 Safe operating area

Ptot = f (TC)

ID = f ( V DS )
parameter : D = 0 , T C=25C

40

10 1

SPP03N60S5

A
32
10 0

ID

Ptot

28
24
20
16

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC

10 -1
12
8
4
0
0

20

40

60

80

100

120

10 -2 0
10

160

10

10

10
V
VDS

TC

3 Transient thermal impedance

4 Typ. output characteristic

ZthJC = f (t p)

ID = f (VDS); Tj=25C

parameter: D = tp/T

parameter: tp = 10 s, VGS

10

10

A
K/W

10V

20V
12V

10 0

ID

ZthJC

9V

5
8.5V

4
10 -1

8V

7.5V

7V

1
10 -2 -5
10

10

-4

10

-3

10

-2

10

-1

s 10

tp

Rev. 2.7

0
0

6.5V

10

15

25

VDS

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2009-11-26

SPP03N60S5
5 Drain-source on-state resistance

6 Typ. transfer characteristics

RDS(on) = f (Tj)

ID= f ( VGS ); V DS 2 x ID x RDS(on)max

parameter : ID = 2 A, VGS = 10 V

parameter: tp = 10 s

SPP03N60S5

ID

RDS(on)

98%
typ

0
-60

-20

20

60

100

0
0

180

12

20

VGS

Tj

7 Typ. gate charge

8 Forward characteristics of body diode

VGS = f (QGate)

IF = f (VSD)

parameter: ID = 3.2 A pulsed

parameter: Tj , tp = 10 s

16

10 1

SPP03N60S5

SPP03N60S5

A
0.2 VDS max

10 0
10

IF

VGS

12 0.8 VDS max

10 -1
Tj = 25 C typ

Tj = 150 C typ
Tj = 25 C (98%)

0
0

Tj = 150 C (98%)
2

10

12

14

16 nC 19

QGate

Rev. 2.7

10 -2
0

0.4

0.8

1.2

1.6

2.4 V

VSD
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2009-11-26

SPP03N60S5
9 Avalanche SOA

10 Avalanche energy

IAR = f (tAR)

EAS = f (Tj)

par.: Tj 150 C

par.: ID = 2.4 A, V DD = 50 V

3.5

120

mJ
Tj(START) =25C

IAR

EAS

2.5
80

2
60
1.5

Tj(START) =125C
40

1
20

0.5

0 -3
10

10

-2

10

-1

10

10

10

s 10
tAR

0
20

40

60

80

100

120

160

Tj

11 Drain-source breakdown voltage

12 Typ. capacitances

V(BR)DSS = f (Tj)

C = f (VDS)
parameter: V GS=0V, f=1 MHz

720

10 4

SPP03N60S5

pF

680

10 3

Ciss

660

V(BR)DSS

640

10 2

Coss

620
600
10 1
580

Crss

560
540
-60

-20

20

60

100

180

Tj

Rev. 2.7

10 0
0

10

20

30

40

50

60

70

80

100

VDS

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2009-11-26

SPP03N60S5

Definition of diodes switching characteristics

Rev. 2.7

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SPP03N60S5

PG-TO220-3-1, PG-TO220-3-21

Rev. 2.7

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2009-11-26

SPP03N60S5

Rev. 2.7

Page 10

2009-11-26