Bipolar Junction transistor

Holes and electrons

determine device characteristics

Three terminal device

Control of two terminal currents

Amplification and switching through 3rd contact

How can we make a BJT from a pn diode?

Take pn diode
V

Remember reverse bias

characteristics

Reverse saturation current: I0

I0

Test: Multiple choice

Why is the reverse bias current of a pn diode small?

1. Because the bias across the depletion region is

small.
2. Because the current consist of minority carriers
injected across the depletion region.
3. Because all the carriers recombine.

Test: Multiple choice

Why is the reverse bias current of a pn diode small?

1. Because the bias across the depletion region is

small.
2. Because the current consist of minority carriers
injected across the depletion region.
3. Because all the carriers recombine.

How can we make a BJT from a pn diode?

Take pn diode
V

ep

Remember reverse bias

characteristics

Reverse saturation current: I0

Caused by minority carriers
swept across the junction

h+

np and pn low

I0 small
I0

ep

Test: Multiple choice

n
h+

If minority carrier concentration

np and/or pn
can be increased what will
happen to I0?

I0

1. Increase
2. Decrease
3. Remain the same

V
ep

If minority carrier concentration

np and pn

can be increased near the

depletion region edge, then I0
will increase.

n
h+

If np and pn higher

|I0| larger
I0

V
ep

Test: True-False

n
h+
I

If we only increase pn
then |I0| will still increase.
I0

How can we increase the minority carrier

concentration near the depletion region edge?
Take pn diode

V
h+
p

n
e-

Remember forward bias

characteristics

How can we make a hole

injector from a pn diode?
1. By increasing the applied bias, V.
2. By increasing the doping in the p region only
3. By applying a reverse bias.

Hole injector

Take pn diode

h+
p+p

Remember forward bias

characteristics

When using a p+n junction

e-

diode current If hole current

If

Ip pno (eeV/kT-1)
In npo (eeV/kT-1)
Since NA >> ND
np << pn
Ip >> In

Thus:
A forward biased p+n diode is a good hole injector

A reverse biased np diode is a good minority carrier collector

V
I0
V
I
h+
p+

n
h+

e-

ep
If W large, then?

W
1.
2.
3.
4.

Recombination of excess holes will occur and excess will be 0 at end of layer
Recombination of excess holes will occur and excess will be large at end of layer
No recombination of excess holes will occur.
Recombination of excess electrons will occur and excess will be np0 at end of layer

Thus:
A forward biased p+n diode is a good hole injector

A reverse biased np diode is a good minority carrier collector

V
I0
V
I
h+
p+

dpn
n
e- L
p
W

n
h+ x

ep
If W large holes
recombine
Excess hole
concentration reduces
exponentially in W to
some small value.

What is the magnitude of the hole diffusion current at the edge

x=W of the green region?
V
I0
V
I
h+
p+

dpn
n
e- L
p

n
h+ x

ep

W
1.
2.
3.

Magnitude of hole diffusion current at x=W is same as at x=0

Magnitude of hole diffusion current at x=W is almost 0
Magnitude of hole diffusion current cannot be derived from this layer.

Thus:
A forward biased p+n diode is a good hole injector

A reverse biased np diode is a good minority carrier collector

V
I0
V
I
h+
p+

dpn
n
e- L
p
W

Reduce W

n
h+ x

ep
if W large holes
recombine
Since gradient of dpn @
x=W is zero, hole
diffusion current is also
zero

BJT p+np
E: emitter
B: base
C: collector

EB

E
IC

p+

IE

IC

B
n

VVBC

W < Lp

IE

VBC

Base: Short layer with

recombination and no Ohmic
contacts at edges.
Single junction

pno

npo

pno

npo

Double junction

npo

npo

No Ohmic contact thus minority carrier concentration not pno

How will we calculate the minority

carrier concentration in the base?
Rate equation

dp( x, t )
2dp( x, t ) dp( x, t )
Dp

2
t
p
x

Steady state

d 2dp( x) dp( x)
Dp

0
2
p
dx

General solution of second order differential equation

x
x

dp( x) C1 exp
C2 exp
Lp
Lp

With Ohmic contact

C1=0
C20

Without Ohmic contact C10

C20

Planar BJT - npn

For integrated circuits (ICs) all contacts have to be on the top

n+-well for emitter

p+ Si
Ohmic contact B

p-well for base

E

n+ Si
ohmic contact

device insulation
n+ Si
p+ Si

p Si

p+ Si

n Si

p Si

p-substrate
n-well for collector

Carrier flow in BJTs

E

IE

p+

n
holes
IB

IC
e- gain, reverse bias

holes

IE

IC
IB

IB

ICB0
Recombination
e- loss

e- loss, forward bias

IB

IB = IB + IB ICB0

Control by base current : ideal case.

Based upon space charge neutrality
Base region

Electrostatically neutral

IE = Ip
t transit time
t < p

h+
e-

Wb << Lp

recombine with

Based on the given timescales, holes can pass through the narrow base
before a supplied electron recombines with one hole: ic/ib = p/t

The electron supply from the base contact controls the forward bias to
ensure charge neutrality!

How good is the transistor?

Injection of carriers

Wish list:
E IEp B
C
IEp>>IEn
IC
or g = IEp/(IEn + IEp) 1
g: emitter injection efficiency
equilibrium
IC IEp
or B= IC/IEp 1
eVBE>0
B: base transport factor
IEn
or a= IC/IE 1
x
h+ Wb < Lp
a: current transfer ratio
IB IEn + (1-B) IEp
No amplification!
thus b= IC/IB = a/(1-a)
b: current amplification factor
Amplification!
ICB0 ignored

Review 1 BJT basics

IC
Forward active mode (ON)
IE
VBC
V

EB

p+

IE

IC
B
n

VV
BC
p

W < Lp
Forward biased p+n
junction is a hole injector

Reverse biased np junction is

a hole collector

Review 1 BJT basics

IC
Forward active mode (ON)
IE
VBC
V

EB

p+

V
IE IB=IB+IB I C VBC
B
n

W < Lp
Forward biased p+n
junction is a hole injector

Reverse biased np junction is

a hole collector

Review 2
Amplification?
IB = IB + IB ICB0
Recombination only case: IB, ICB0 negligible
ic/ib = p/t
b = p/t

Carriers supplied by the base current stay much

longer in the base: p than the carriers supplied
by the emitter and travelling through the base: t.

But in more realistic case: IB is not negligible

b = IC/IB

With

IB electrons supplied by base = IB = In

IC holes collected by the collector = Ip

Currents?
In order to calculate currents in pn junctions, knowledge of
the variation of the minority carrier concentration is
required in each layer.
The current flowing through the base will be determined by
the excess carrier distribution in the base region.
Simple to calculate when the short diode approximation is
used: this means linear variations of the minority carrier
distributions in all regions of the transistor. (recombination
neglected)
Complex when recombination in the base is also taken into
account: then exponential based minority carrier
concentration in base.

Minority carrier distribution

Assume active mode: VEB>0
& VBC<0
E

Emitter injects majority carriers

into base.
dpn(0)=pno (exp(VEB/VT)-1)

p(x)
dp(x)

Collector collects minority

carriers from base.
dpn(Wb)=pno (exp(VBC/VT)-1)

DpE

Without recombination

pn0
pn0
00

With recombination

DpC
Wb

Currents: simplified case

dp(x)

Assume IB=0 & IBC0= 0

DpE

Then IE = total current crossing

the base-emitter junction
B

Then IC = IEp gradient of excess

hole concentration in the base
IB without recombination is the
loss of electrons via the BE
x
junction: IB

DpC
0

Wb

Then IB = gradient of excess

electron concentration in the
emitter
See expressions for diode current for short diode

Narrow base: no recombination: Ip

minority carrier density gradient in the base
dp(x)

DpE = pn0(e eVEB/kT 1) pn0 e eVEB/kT

DpC = pn0(e e|VBC|/kT 1) -pn0
DpE
Linear variation of excess carrier concentration:
dp( x) Ax B

DpE DpC
DpE
A

Wb
Wb
B DpE DpC DpE

DpC
0

dp( x) DpE 1

W
b

Note: no recombination

Wb x

Collector current: Ip
Diffusion current: I p eADp

ddp( x)
dx

ddp( x)
DpE

dx
Wb
Hole current:

DpE eADp pn0 e

I p eADp

Wb
Wb

eVEB

kT

Collector current I C I p No recombination, thus all injected

holes across the BE junction are
collected.
Base current??

Look at emitter: In
minority carrier density gradient in the emitter
dn(x)

Dnp = np0(e eVEB/kT 1) np0 e eVEB/kT

Dnp

Linear variation of excess carrier concentration:

dn( x) Ax B
A

n p0 Dn p
xe

Dn p
xe

B Dn p

Dn p
x Dn p
dn( x)
xe

0
xe

x
0

Base current: In
ddn( x)
Diffusion current: I n eADn
dx

Base current:I B

In

eADn n p0 e

eVEB

kT

xe

The base contact has to re-supply only the electrons that are
escaping from the base via the base-emitter junction since no
recombination IB=0 and no reverse bias electron injection
into base ICB0=0.

Emitter current
The emitter current is the total current flowing through the
base emitter contact since IE=IC+IB (current continuity)

Emitter current:

Dn n p0 D p pn0
I E I n I p eA

WB
xe

I C I p D p pn0 xe

Current gain: b
I B I n Dn n p0Wb

eVEB

kT

Short layer approach summary

forward active mode

dc(x)
IE = IpEB + InEB

DpE

IC = IpBC + InBC

DnE

IC IpBC = IpEB
IE = IB

+ IC

IB = IE

- IC

IB = InEB

-Xe

DpC
DnC
Wb Xc

General approach also taking

recombination into account.
forward active mode

dc(x)
DpE
DnE

-Xe

-LpE

DpC
DnC LpC
Wb < LnB

x
Xc

Which formulae do we use for the excess minority

carrier concentration in each region?
dc(x)

forward active mode

DpE
DnE

-Xe

-LpE
0

Emitter
Collector

DpC
DnC LpC
Wb < LnB

use LONG diode approximation

dnpE(x)=DnE exp(-(-x)/LpE)
dnpC(x)=DnC exp(-x/LpC)

x
Xc

In the base we must take recombination

into account short diode
approximation cannot be used!
dp(x)

Excess hole concentration dp(x):

d 2dp( x) dp( x)
2
From:
2
dx
Lp

DpE

Exact solution of differential equation:

dp(x) = C1 ex/Lp + C2 e-x/Lp

Constants C1, C2:

DpE = dp(x=0)
DpC = dp(x=Wb)

DpC

Wb

In the base with recombination long

diode approximation can also not be
used!
dp(x)
Exact solution of differential equation:

dp(x) = C1 ex/Lp + C2 e-x/Lp

DpE

Long diode approximation:

dp(x) = C3 e-x/Lp
Boundary condition at BC
junction cannot be guaranteed

DpC LnB
Wb

http://www.ecse.rpi.edu/~schubert/Course-ECSE-2210-Microelectronics-Technology-2010/

Extraction of currents in the

general approach.
forward active mode

dc(x)

IE = IpEB + InEB

DpE

IC = IpBC + InBC
IC IpBC

DnE

IE = IB

+ IC

IB = IE

- IC

-Xe

IB = InEB+ IpEB - IpBC

-LpE

Term due to recombination

DpC
DnC LpC
Wb < LnB

x
Xc

dp(x)
DpE

Currents: Special case when only

recombination in base current is taken
into account: Approximation: IB=0
B

Starting point:
Assume IE=IEp & IBC0= 0

DpC 0

Wb

Then IE = Ip(x=0)
x
and IC = Ip(x=Wb)
IB=IE - IC =IB

All currents are then determined by the

minority carrier gradients in the base.
DpE = pn0(e eVEB/kT 1)

Injection at emitter side:

dp(x)

Collection at collector side: DpC = pn0(e eVCB/kT 1)

DpE

IE = Ip(x=0)

DpC

IC = Ip(x=Wb)
Wb

Expression of the diffusion currents

Diffusion current: Ip (x) = -e A Dp ddp(x)/dx
Emitter current: IE Ip (x=0)
Collector current: IC Ip (x=Wb)

Base current: IB Ip (x=0) - Ip (x=Wb)

Hyperbolic functions

IE e A Dp/Lp (DpE ctnh(Wb/Lp) - DpC csch(Wb/Lp) )

IC e A Dp/Lp (DpE csch(Wb/Lp) - DpC ctnh(Wb/Lp) )
IB e A Dp/Lp ((DpE + DpC) tanh(Wb/2Lp) )
Superposition of the effects of injection/collection at
each junction!
Note: only influence of recombination

Non-ideal effects in BJTs

Base width modulation
V

BE

p+

IE

IC

Bn

VVBC

Original base width

Metallurgic junction

Effective base width

Depletion width
changes with VBC

Base width modulation

Early voltage: VA
I c eA

D p pn0
W
Wbb

eVBE

kT

base width modulated

iC

ideal

VA

-vCE

IB

Conclusions
Characteristics of bipolar transistors are based on
diffusion of minority carriers in the base.
Diffusion is based on excess carrier concentrations:
dp(x)

The base of the BJT is very small:

dp(x) = C1 ex/Lp + C2 e-x/Lp

Base width modulation changes output impedance of

BJT.

Transistor switching
Ic

p-type material
n-type material

iC

iC
ECC

RS
es

ib higher

RL

iB

iE

ECC /RL

ib

On
es

-vCE
ECC

Off

iC
iC

ic=biB
RL

iB

ECC
RS

es

Es
-Es

t
iE

-vCE

iC
ic=biB

iC

RL

ECC

RS

es

Es
-Es

iE

-vCE

iC
icbiB
iC

RL

ECC

RS

es

Es
-Es

Ic= ECC /RL

iE

-vCE

Switching cycle
iB
IB

iC

Switch to ON

IBEs/RS

Switch OFF
RL

iB

ECC

RS

DpE

QB
es

Es
-Es

-IB
DpE

iE
Qs

iC

DpE
t1 ts

ECC /RL

iC
IC
ECC

-vCE

t2

ts
tsd
ICECC/RL

-pn

dp
t2

ts
t1

DpC
0

t0

Wb

Charge in base (linear)

Cut-off

Saturation

VEB<0 & VBC<0

DpE=-pn & DpC=-pn

VEB>0 & VBC0

DpE = pn (eeVEB/kT 1)
DpC = 0 (VBC=0)

dp

DpE
DpE

dp

VBC>0
DpC

-pn

x
Wb

x
Wb

Currents - review.
forward active mode

dc(x)

IE = IpEB + InEB

DpE

IC = IpBC + InBC
IC IpBC

DnE

IE = IB

+ IC

IB = IE

- IC

-Xe

IB = InEB+ IpEB - IpBC

-LpE

Term due to recombination

DpC
DnC LpC
Wb < LnB

x
Xc

Switching cycle - review

Common emitter cicuit
iC
RL

iB

iB
IB

IBEs/RS

-IB
DpE

QB
es

Es
-Es

DpE

iE
Qs

Load line technique

iC
ECC /RL

ECC

-vCE

With IB>ICmax/b

Over-saturation

ECC

RS

Switch to ON

DpE
t1 ts

iC
IC

t2

-pno

dp
t2

ts
t1

DpC

t0

Wb
ICmaxECC/RL

pno << DpE

Switching cycle - review

Common emitter cicuit
iC
RL

iB

Switch OFF

-IB-Es/RS

ECC

RS

DpE

QB
es

Es
-Es

iB
IB

DpE

iE
Qs

Load line technique

iC
ECC /RL

ECC

-vCE

iC
IC

t2 ts
tsd

t3 t4

ICECC/RL

-pno

dp
t2

ts
t3

t4

DpC
0

Wb

Calculating the delays

Since the currents and minority carrier charge
storage are determined by the pn diodes, the
delays are calculated as in the pn diode.
Knowledge of current immediately before and after
switch
Stored minority carrier charge Qp(t) cannot change
immediately delay.

The additional parameter is the restriction on the

maximum collector current imposed by the load.

ON switching

OFF=0ON
RL

C
p

RS

e(t)

B n
p

vbc

ECC

veb

E
iC
dpnB(x)

E I
B
IB
IB

ICsat

QB
IBp
Qsat

IB
IB
0

WB x

t<0
t0

veb= 0ON0.7V
E-p

B-n

tsat
i (t )

dQB (t ) QB (t )

dt
p

t
QB I B p 1 exp

p

&

RS

+E>>0.7V

E
IB
RS

QB

x WB

e A dn

x 0

tsat

pB

( x)dx

t<tsat

iC (t )

QB (t )

t
I B p
1 exp
t
p

ttsat

iC (t )

ECC
I Csat
RL

Driving off
Time to turn the BJT OFF is determined by:
1) The degree of over-saturation (BC junction)
2) The off-switching of the emitter-base diode
ib
IB

ib
IB

CASE 1: OFF=IB=0
0N (saturation)OFF

Qb
IB p

CASE 2: OFF=-IB
0N (saturation)OFF

-IB
Qb
IB p
Qs

Qs = IC t
iC
IC

tsd

-IB p
iC
IC

tsd

OFF switching

0N (saturation)OFF - CASE 1: OFF=IB=0

RL
C
p

RS

e(t)

B n
p

vbc

ECC

veb

E
dpnB(x)

E t<0
IB
t0 IB=0

iC tsd
B

ICsat

QB
IBp

tsd

Qsat

WB x

t<0

veb= 0.7V (ON)0V

E-p

RS

IB

tsd

B-n

E=0V

E
0
RS

tsd
i (t )

dQB (t ) QB (t )

dt
p

t
QB (t ) I B p exp

p
&
QB

tsd

x WB

e A dn pB ( x)dx

x 0

t<tsd

iC (t )

ECC
I Csat
RL

ttsd
iC (t )

QB (t )

I B p

t
exp

p

0N (saturation)OFF - CASE 2: OFF=-IB

RL
C
p

RS

e(t)

B n
p

ECC

veb

E t<0
IB
t0

vbc

dpnB(x)

iC
tsd

ICsat

-IB

QB
IBp

tsd

tsd

Qsat

WB x

tsd

tsd

t<0
veb= 0.7V (ON)-E
E-p

B-n

i (t )

dQB (t ) QB (t )

dt
p

RS

IB

-E

E
RS

t
QB (t ) I B p 2 exp 1

p
&
QB

x WB

e A dn pB ( x)dx

x 0

t<tsd

iC (t )

ECC
I Csat
RL

ttsd

iC (t )

QB (t )

t
I B p
2 exp 1
t
p

0N (saturation)OFF - CASE 1: OFF=IB=0

iC tsd
ICsat

iC

t<tsd
E
iC (t ) CC I Csat
RL

tsd

iC (t )

QB (t )

I B p

t<tsd

iC (t )

ICsat

ttsd

tsd

0N (saturation)OFF - CASE 1: OFF=-IB

ECC
I Csat
RL

ttsd

t
exp

p

iC (t )

QB (t )

tsd

t
I B p
2 exp 1
t
p
t

STORAGE DELAY TIME: tsd

t sd
ECC I B p
iC (t sd ) I Csat

exp

RL
t
p
I B p
t sd p ln

Csat t

iC (t sd ) I Csat

ECC I B p

RL
t

t
2 exp sd

I B p

t sd p ln

1 1 I B p

I Csat t

2 2 I Csat t
shorter delay

Transients
Turn-on: off to saturation
iC
IC

ICECC/RL
t
ts

Time to saturation
ON switching

QB

OFF=0ON

IBp

RL

t
QB I B p 1 exp
p

Qsat

C
RS

e(t)

p
B n
p

vbc

ECC

tsat

veb
iC

iC (t )

ICsat
ttsat

t<tsat

iC (t )

QB (t ) I B p

t
t

ECC
I Csat
RL

t
1 exp

tsat

t=tsat

iC (t sat )

t
I B p
1 exp sat I Csat
p
t

Transients
Turn-on: off to saturation
iC
IC

ICECC/RL
t
ts

ts = p ln(1/( 1 IC/b IB))

ts small when:
p small
IC small compared to b IB
oversaturation

Transients
Turn-off: saturation to off
Storage delay time: tsd
iC
IC

IC ECC/RL

toff ts

Time from saturation

0N (saturation)OFF - CASE 1: OFF=IB=0

iC tsd

ICsat

t<tsd
E
iC (t ) CC I Csat
RL

ttsd
iC (t )

tsd

iC (t sd ) I Csat

QB (t )

I B p

t
exp

p

t
ECC I B p

exp sd

RL
t
p

I B p
t sd p ln

I Csat t

Transients
Turn-off: saturation to off
Storage delay time: tsd
iC
IC

IC ECC/RL

toff ts

Determined by
EB diode

tsd = p ln(b IB /IC)

tsd small when:

p small
BUT
tsd large when:
IC small compared to b IB
NO oversaturation

Transients
Turn-on: off to saturation
iC
IC

ICECC/RL

Turn-off: saturation to off

Storage delay time: tsd
iC
IC

IC ECC/RL

t
ts

ts = p ln(1/( 1 IC/b IB))

ts small when:
p small
IC small compared to b IB
oversaturation

toff ts

Determined by
EB diode

tsd = p ln(b IB /IC)

tsd small when:

p small
BUT
tsd large when:
IC small compared to b IB
NO oversaturation

Solution to dilemma
The Schottky diode clamp
C

I
B

B
metal

0.3 0.7

pn diode

Schottky diode

Large signal equivalent circuit

Switching of BJTs
LARGE SIGNAL
iC
RL

iB

ECC

RS

es

iE

iC

Ebers-Moll large signal circuit model

for large signal analysis in SPICE
Not examinable

Is valid for all bias conditions.

The excess at the BC is taken
into account what is essential
for saturation operation and offcurrents.

Superposition EB & BC influence

Take EB & BC forward biased.
Charge in base:
dp

dp

DpE

dp

DpE
DpC

Wb x

IEN

ICN

Wb x

IEI

DpC
ICI
Wb x
negative

IE = IEN + IEI
IC = ICN + ICI

Where IEN, ICI are pn diode currents of

EB and BC respectively.

Ebers-Moll equations
IE = IEN + IEI
IC = ICN + ICI

Diode currents

IE = IES (eeVEB/kT 1) aI ICS (eeVCB/kT 1)

IC = aN IES (eeVEB/kT 1) ICS (eeVCB/kT 1)

Ebers-Moll equations
IE = IEN + IEI
IC = ICN + ICI

Collected currents

IEI = aI ICI
ICN = aN IEN

a: current transfer factor

IE = IES (eeVEB/kT 1) aI ICS (eeVCB/kT 1)

IC = aN IES (eeVEB/kT 1) ICS (eeVCB/kT 1)

Ebers-Moll equations
IE = IES (eeVEB/kT 1) aI ICS (eeVCB/kT 1)
IC = aN IES (eeVEB/kT 1) ICS (eeVCB/kT 1)

Or:

Where: aN IES = aI ICS

IEO

eVEB/kT
eV
/kT
EB
IIEE == aaII IICC +
(1a
a
)
I
(e
+ IEO (eN I ES1)eV /kT 1)
/kT (e CB
IICC == aaNN IIEE -- (1aCB
1)
I) ICS1)
ICOa(eNeV

ICO
General equivalent circuit based on diode circuit

Equivalent circuit
IE = aI IC + IEO (eeVEB/kT 1)
IC = aN IE - ICO (eeVCB/kT 1)

C
IC

IE
IB
B
Valid for all biasing modes

Description of different transistor regimes

Cut-off

Active

VBE<0 & VCB<0

VBE>0 & VCB<0

IE

IC

IB

IE

IC
IB

B
IE = -(1-aN) IES
IC = (1-aI) ICS

IC = IC0 + aN IE

IC
IE

Small!

IC0, IE=0

-VCB

BJT small signal equivalent

circuit

Now
Amplification and maximum operation
frequency
SMALL SIGNAL equivalent circuit
Cj,BC

Cj,BE
vbe

C
npn

Cd,BE

Rp

gmvbe

Ro

Definition of circuit elements

Transconductance

Vbe

I C I 0 exp

VT

I C
IC
gm

Vbe VT

Cj,BC

Cj,BE

Cd,BE

Rp

gmvbe

Ro

 Base input resistance

I C bI B
gm

I C
Vbe

Vbe b
Rp

I B
gm
Cj,BC

Cj,BE

Cd,BE

Rp

gmvbe

Ro

 Base-emitter input capacitances

Cd , BE

dQb
dVbe

Cj,BE

Depletion capacitance

Cd,BE

Diffusion capacitance

See SG on pn-diode

Cd , BE

IE
B
VT
Cj,BC

Cj,BE

Cd,BE

Rp

gmvbe

Ro

 Base-collector capacitance
Cj,BC

Depletion capacitance
Miller capacitance: feedback between B & C

Cj,BC

Cj,BE

Cd,BE

Rp

gmvbe

Ro

 Output resistance

iC

ideal

Vce Vcb
VA

Vce VA
R0

I C
IC

IB

-vCE

Cj,BC

Cj,BE

Cd,BE

Rp

gmvbe

Ro

Current gain - frequency

Small signal current gain
h fe

ic g m vbe
b

ib
ib
1 j C j , BE Cd , BE Rp
Circuit analysis

ib

Cj,BC

Cj,BE
vbe

Max gain
C

Cd,BE

Rp

gmvbe

Ro

Transit frequency fT
Small signal current gain=1
h fe 1
fT

2p C

j , BE

b
j , BE

Cd , BE

Cd , BE Rp

1
2p

C j , BEVT
IE

total transit time

Base-Emitter charging time

Base transit time

Transit frequency fT
Base transit time
Qb

B t
I C
B

IC I p

Wb2
B
2D

for p+n

D D p ( pnp), Dn (npn)

Note: this approach ignores delay caused by BC junction (see 3rd year)

Simplified small signal equivalent circuit

Common-emitter connection
Active mode:
BE: forward, BC: reverse.
ib

ic

vbe

rbe

bib

rce

or

gmvbe

Small signal equivalent circuit when

other biasing connection is made
Common-base connection
Active mode:
BE: forward, BC: reverse.
E

ie

ic
ie

Cdif

CjE

re

aie

CjC

rc

Conclusion
Delays in BJTs are a result of the storage of
minority carriers.
Main delay in common BJTs is due to the
base transit time t.