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Features
193
18
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
S
Continuous Drain
Current
Avalanche Current
TC=25C
Power Dissipation B
Power Dissipation
V
A
2.7
IAR
mJ
10
EAR
25
2.1
1.3
TJ, TSTG
-55 to 175
Symbol
t 10s
Steady-State
Steady-State
12.5
PDSM
TA=70C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
30
ID
IDM
PD
TC=100C
TA=25C
Units
V
3.8
TC=100C
Maximum
200
RJA
RJC
Typ
17.1
50
4
Max
30
60
6
Units
C/W
C/W
C/W
AOD450
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=10mA, VGS=0V
200
IGSS
VDS=0V, VGS=30V
VGS(th)
VDS=VGS, ID=250A
ID(ON)
VGS=10V, VDS=15V
10
TJ=55C
VGS=10V, ID=3.8A
TJ=125C
gFS
Forward Transconductance
VSD
IS=1A, VGS=0V
Diode Forward Voltage
G
Maximum Body-Diode Continuous Current
IS
VDS=15V, ID=3.8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Units
Max
VDS=160V, VGS=0V
IDSS
RDS(ON)
Typ
100
nA
0.55
0.70
1.1
1.32
8.7
0.8
215
pF
32
pF
7.2
pF
5.5
3.82
nC
0.92
nC
Qgs
1.42
nC
Qgd
1.47
nC
tD(on)
Turn-On DelayTime
6.3
ns
tr
tD(off)
Turn-Off DelayTime
tf
trr
Qrr
3.3
ns
10.5
ns
2.8
ns
IF=3.8A, dI/dt=100A/s
59
142
ns
nC
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The
Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C.
D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating.
Rev0: Feb 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AOD450
1.0E+02
12
10V
1.0E+01
8V
1.0E+00
VDS=15V
ID(A)
ID(A)
10
6
4
1.0E-01
7V
494
692
1.0E-02
VGS=6V
0
5
10
VDS(Volts)
15
20
800
Normalized On-Resistance
700
VGS=10V
500
400
300
200
0
10
193
18
2.4
600
VGS(Volts)
Figure 2: Transfer Characteristics
RDS(ON) (m)
593
830
1.0E-03
0
1400
2.2
2
VGS=10V, 3.8A
1.8
1.6
1.4
1.2
1
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
59 125
100
142
Temperature (C)
75
150
175
1.0E+01
ID=3.8A
1200
1.0E+00
125C
125C
1.0E-01
1000
IS (A)
RDS(ON) (m)
4.6325C
125C
1.0E-02
800
25C
600
1.0E-03
25C
1.0E-04
400
1.0E-05
200
6
10
12
14
16
18
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOD450
10
VDS=10V
ID=3.8A
250
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
200
150
4.63
100
Coss
50
494
692
Crss
593
830
0
0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
193
18
100.00
200
TJ(Max)=175C, TC=25C
160
10.00
TJ(max)=175C
TC=25C
RDS(ON)
limited
1.00
Power (W)
ID (Amps)
10s
100
120
80
1ms
0.10
DC
40
0.01
0.1
10
VDS (Volts)
100
1000
D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC
RJC=6C/W
0.001
0.01
59 0.1
142
10
10
0
0.0001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
10
100
AOD450
5
Power Dissipation (W)
4
3
2
TA=25C
25
20
15
4.63
10
494
692
5
0
0
0.000001
0.00001
0.0001
0.001
25
50
40
Power (W)
3
2
50
75
100
125
150
TCASE (C)
Figure 13: Power De-rating (Note B)
175
193
18
TA=25C
30
20
10
0
0.001
0
0
25
50
75
100
125
150
175
TCASE (C)
Figure 14: Current De-rating (Note B)
10
ZJA Normalized Transient
Thermal Resistance
593
830
59
0.01
1
142
0.1
10
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=60C/W
Single Pulse
PD
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
10
1000
100
1000
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