KSA539

KSA539
Low Frequency Amplifier

Complement to KSC815
Collector-Base Voltage: VCBO = -60V
Collector Power Dissipation: PC = 400mW
Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol
VCBO

Collector-Base Voltage

Parameter

Ratings
-60

Units
V

VCEO
VEBO

Collector-Emitter Voltage

-45

Emitter-Base Voltage

-5

IC

Collector Current

-200

mA

PC

Collector Power Dissipation

400

mW

TJ

Junction Temperature

150

TSTG

Storage Temperature

-55 ~ 150

Electrical Characteristics Ta=25C unless otherwise noted

Symbol
BVCBO

Parameter
Collector-Base Breakdown Voltage

Test Condition
IC = -100A, IE =0

Min.
-60

BVCEO

Collector-Emitter Breakdown Voltage

IC= -10mA, IB=0

-45

BVEBO

Emitter-Base Breakdown Voltage

IE= -10A, IC=0

-5

ICBO

Collector Cut-off Current

VCB= -45V, IE=0

Typ.

Max.

Units
V
V
V

-100

nA

-100

nA

IEBO

Emitter Cut-off Current

VEB= -3V, IC=0

hFE

DC Current Gain

VCE= -1V IC= -50mA

40

VBE(on)

Base-Emitter On Voltage

VCE= -1V, IC= -10mA

-0.60

-0.65

-0.90

VCE (sat)

Collector-Emitter Saturation Voltage

IC= -150mA, IB= -15mA

-0.25

-0.5

VBE (sat)

Base-Emitter Saturation Voltage

IC= -150mA, IB= -15mA

-0.9

-1.2

240

hFE Classification
Classification

hFE

40 ~ 80

70 ~ 140

120 ~ 240

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

KSA539

Typical Characteristics

1000

-200

VCE = -1V

IB =-0.8mA
-160

IB =-0.7mA

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

-180

IB =-0.6mA

-140

IB =-0.5mA

-120

IB =-0.4mA

-100
-80

IB =-0.3mA

-60

IB =-0.2mA
-40
-20

100

IB =-0.1mA
10

-0

-5

-10

-15

-20

-25

-30

-35

-40

-45

-1

-50

-10

-1000

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. DC current Gain

-10

-200

Ic = 10IB

VCE = -1V

-100

IC[mA], COLLECTOR CURRENT

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-100

VBE(sat)

-1

-0.1

at)
VCE(s

-10

-1

-0.01
-1

-10

-100

-400

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

VBE[V], BASE-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

100

Cob[pF], CAPACITANCE

f = 1MHz
IE = 0

10

1
-1

-10

-100

VCB[V], COLLECTOR BASE VOLTAGE

Figure 5. Collector Output Capacitance

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

KSA539

Package Demensions

TO-92
+0.25

4.58 0.20

4.58 0.15

0.10

14.47 0.40

0.46

1.27TYP
[1.27 0.20]

1.27TYP
[1.27 0.20]
0.20

(0.25)

+0.10

0.38 0.05

1.02 0.10

3.86MAX

3.60

+0.10

0.38 0.05

(R2.29)

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation

Rev. H3