TECHNICAL APPRACH

FOR
L BAND (1.28 TO 1.4 GHz) SOLID STATE POWER AMPLIFIER
(SSPA)

NAVANIDHI ELECTRONICS PVT. LTD.

Plot No.21, IDA Mallapur, I.E, NACHARAM
HYDERABD 500076
Phone: 040 27155843, 27157295
Fax 27170244
Website www.navanidhi.com

Technical Approach for 4.0KW (PULSED) PA

To meet the required specification, the L band solid state power amplifier is realized as
per the below block diagram.

1. Directional coupler
The input level +10dBm is fed to the directional coupler (DC), the purpose of the DC is to
monitor the input level to the power amplifier. The output level of the DC is +7.0dBm.
a.
b.
c.
d.
e.
f.

Make
Part No
Frequency
Main line loss
Coupling
Operating temperature

: M/S Mini Circuits

: DBTC-7-152+
: 10-1500MHz
: 3.0 dB Max.
: 7.0 dB
: -40C to +85C

2. Limiter
The output of the DC (+7dBm) is fed to the limiter, it will control the input power
variation (from 0dBm to +30dBm) to limit the 0dBm output, it will provide the protection to
input over drive.
a.
b.
c.
d.
e.
f.

Make
Part No
Frequency
Insertion loss
Output power
Operating temperature

: M/S Mini Circuits

: RLM-23-1WL+
: 100-2500MHz
: 0.7dB
: 0dBm Typ. @ 30dBm
: -40C to +85C

3. Radio frequency switch (R.F.S)

The output of the limiter 0dBm is fed to the RFS, the purpose of the RFS is to switch OFF
the RF input to the amplifier whenever the VSWR, thermal fault or both appears. It has 1.0dB
loss. The output level of the RFS is -1.0dBm.
a.
b.
c.
d.
e.
f.
g.
h.

Make
Part No
Frequency
Isolation
Insertion loss
Input power handling
Operating voltage
Operating temperature

: Hittite
: HMC349MS8G
: DC-4GHz
: 60dB
: 1.0dB
: 30dBm
: +5V DC
: -40C to +85C

4. Digital attenuator (D.A)

The output of the RFS (-1.0dBm) is fed to the digital attenuator (D.A). The purpose of
the D.A is to maintain the output power (amplitude) matching (balancing) among the RF
channels. The output level of the D.A is -7.0dBm.
a.
b.
c.
d.
e.
f.

Make
Part No
Attenuation range
Insertion loss
Operating voltage
Operating temperature

: Hittite
: HMC472LP4
: -0.5 to -31.5dB
: 1.8dB Max.
: +5V DC
: -40C to +85C

5. Phase shifter (P.S)

The output of the D.A (-7.0dBm) is fed to the phase shifter (P.S). The purpose of the
phase shifter is to maintain the phase balance among the RF channels. The phase can be
adjusted from 0 to 360 by varying the control voltage of the phase shifter.
a.
b.
c.
d.
e.
f.

Make
Part No
Insertion loss
Phase range
Control voltage
Operating temperature

: Mini Circuits
: SPHSA-152+
: -4.0dB
: 0 to 360
: 0-15V
: -40C to +85C

6. Pre amplifier
The output of the P.S (-11.0dBm) is fed to the pre amplifier. The gain of the pre amplifier
is +21dB. The output of the pre amplifier is +10dBm. Power handling capability (P1dB
compression) is +18dBm.
a.
b.
c.
d.
e.
f.

Make
Part No
Frequency
Gain
Operating voltage
Operating temperature

: Mini circuits
: MNA 6+
: 0.5 to 2.5GHz
: 21dB
: +5V DC
: -40C to +85C

7. Driver amplifier 1
The output of the pre amplifier (+10dBm) is fed to the driver amplifier 1. The gain of the
driver amplifier1 is +25dB. The output of the driver amplifier1 is +35dBm. Power handling
capability is 10W.
a.
b.
c.
d.
e.
f.

Make
Part No
Frequency
Output power
Gain
Operating voltage

: Freescale semiconductor
: MRF6V10010NR4
: 960 to 1400MHz
: 10W
: 25dB
: 50V DC

8. Driver amplifier 2
The output of the driver amplifier1 (+35dBm) is fed to the driver amplifier2. The gain of
the driver amplifier2 is 18dB.The output of the driver amplifier2 is +53dBm. Power handling
capability is 330W.
a.
b.
c.
d.
e.
f.

Make
Part No
Frequency
Output power
Gain
Operating voltage

: Freescale semiconductor
: MRF6V14300HR3
: 1.2 to 1.4 GHz
: 330W
: 18dB
: 50V DC

9. High power amplifier (H.P.A)

The HPA consists of 1:3 power divider (1No), 1:4 power divider (3 Nos), basic power
modules (12 Nos), 1:4 Power combiner (3 Nos) and 1:3 power combiner (1 No). The output of
the driver amplifier2 (53dBm) is fed to the BPMs 1 to 12 through 1:3 and 1:4 (3 Nos) power
dividers. It is realized by BLL6H1214-500 LDMOS of NXP Semiconductor. The gain of each
module is 15dB, its operating voltage is +50V DC. Power handling capability is 500W. It is
working in L Band 1.2 to 1.4 GHz only. The main reason to select this device is to get the very
low harmonic levels and very less rise time (20nsec) and fall time (6nsec). This device is ment
for radar application only. The outputs of 12 BPMs are combined through 3 nos of 1:4 and 1.3
power combiners. This output is fed to the output port of the amplifier through DDC, which is
realized by micro strip line technique. The loss of the DDC is 0.2dB. The coupling of the DDC is
40dB (FWD&RFL) and directivity is 15dB. The purpose of the DDC is to get the output sampled
forward and reflected powers, which are required for the monitoring and controlling purposes.

10. Basic power module (B.P.M)

a. Make
b. Part No
c. Frequency
d. Output power
e. Gain
f. Operating voltage

: NXP semiconductor
: BLL6H1214-500
: 1.2 to 1.4 GHz
: 500W
: 17dB
: 50V DC

SSPA
SSPA will be realized with 16 nos of 4.0KW amplifier modules and one no of 1:16 power
divider module, these modules will be placed in the mechanical rack in 2X8 matrix to maintain
the required dimensions [1550(L) X 700(B) X 410(H)].
To get the calibration and phase matching of each channel, phase shifter is
provided.
To get the gain matching of the each channel, digital attenuator is provided.
BITS facility is provided for VSWR, thermal and full power output at front panel
LED indication for each channel, and also provision for BITS (other than
calibration output) will be provided through remote interface.
MIL Grade connectors for input/output, power supply and data interface is used.
SSPA/individual modules will meet MIL STD 810G.
Provision for forced air cooling for each channel is provided.
Control & Monitoring Circuit
Control and Monitoring circuit is a system controller assembled in 4KW RF
POWER AMPLIFIER designed to interface with Remote System. It controls the operation of the
Power amplifier based on Remote System interface commands and updates operation status on
demand. It also monitors the amplifier operation, and generates the fault indications, if any
fault occurs. The Control circuit design is based on Microchips Advanced PIC18 series
Microcontroller.