Beruflich Dokumente
Kultur Dokumente
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Recap
NMOS Operation in
Cut off ,Linear and Saturation mode
Related Equations
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MOSFET
Linear/Triode Region
MOS transistor can be modelled as linear resistor
r whose value is controlled by v
DS
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DS
13
and L
The effect of channel-length
length modulation is less for a longlong
channel MOSFET than for a short-channel
short
MOSFET.
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Chapter 4
MOS field-Effect
Effect Transistors (MOSFETs)
Modelling
Channel
Length Modulation
Figre 4.17
NMOS Transistor
Depletion - mode
G
D
G
n
S
(assuming
fixed Vds)
Depletion - mode
Enhancement - mode
Devices are cutoff with zero gate bias voltage
Apply +ve voltage to gate to make channel
PMOS Transistor
Chapter 4
MOS field-Effect
Effect Transistors (MOSFETs)
HomeWork
Voltage and Current Equations for PMOS in
Linear and Saturation mode
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Role of substrate
In many applications the source terminal is connected to
the substrate terminal B which results in the PN junction
between the substrate and the induced channel having
zero (cutoff) bias
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Role of substrate
The reverse bias voltage will widen the depletion region
.This in turn reduces the channel depth
28
Role of substrate
The effect of V on the channel can be most
convinently represented as a change in the
threshold voltage Vt
SB
29
Role of substrate
GS
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Temperature Effects
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Temperature Effects
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Chapter 4
MOS field-Effect
Effect Transistors (MOSFETs)
Figure 4.9
CMOS Transistor