Sie sind auf Seite 1von 33

Outline

Common Source(CS) Configuration


Transfer Characterstics in Common Source(CS)
Configuration

2/12/2015

Recap
Body Effect
CMOS

2/12/2015

Chapter 4

MOS field-Effect
Effect Transistors (MOSFETs)
Figure 4.9

CMOS Transistor

Common Source Amplifier

Two port Network


Biasing to be done
To work at appropriate VGS
and corresponding ID

Common Source Amplifier

V0 = VDD- iDRD

Transconductance
Amplifier
Converted to Voltage
Amplifier

I-V Characterstics of common Source


amplifer
iD

C
B

vGS= vIQ

A
2/12/2015

vDS = vo

I-V Characterstics of common Source


amplifer

2/12/2015

I-V Characterstics of common Source


amplifer
iD

C
B
Load Line
Q

vGS= vIQ
Slope of
Load Line ?
A

2/12/2015

vDS = vo

I-V Characterstics of common Source


amplifer

Y= mx+C

Equation of straight line

Slope of Load line


2/12/2015

I-V Characterstics of common Source


amplifer
iD

C
B

vGS= vIQ

A
2/12/2015

vDS = vo

Transfer Characterstics of common


Source amplifer
v = 5V
DD

Case I

RD = 1K

vGS = 0.6
vt = 0.7

Case II

vGS = 1.2V

11

I-V Characterstics of common Source amplifer

2/12/2015

12

Transfer Characterstics of common Source amplifer


XA :Cut off

AB: Saturation

iD
VDD

VDD =VDSQ

VOB
VOC

BC:Triode
Region

Transfer Characterstics of common Source amplifer

Digital Applications

14

I-V
V and Transfer Characterstics

2/12/2015

15

Operation as Switch

Digital Applications

16

Saturation

VDD =VDSQ

VOB

Operation as Linear Amplifier

Saturation

VDD =VDSQ

VOB

VDSQ close to VDD ?


The positive peaks of the output signals might bump into VDD

VDSQ close to Triode region ?

MOS field-Effect
EffectQ
Transistors
(MOSFETs)
Selection
of
point

Chapter 4

Figure E4.27

Slope of Load line


based on RD

Cutoff Region

2/12/2015

20

Saturation Region

2/12/2015

21

Saturation Region
Saturation

VDD =VDSQ
VOB

2/12/2015

22

Saturation Region

2/12/2015

23

Triode Region

2/12/2015

24

Triode Region

2/12/2015

25

Triode Region

We know

2/12/2015

26

Biasing by Fixing VGS

Selection of R ?
D

2/12/2015

EEE C424/ECE C313

27

Chapter 4
MOS field-Effect
Effect Transistors (MOSFETs)
Biasing
by Fixing
VGS
and Connecting
Figure 4.30
Resistance in the source

FIGURE 4.30 Biasing using a fixed voltage at the gate, VG, and a resistance in the source lead, RS: (a)
basic arrangement; (b) reduced variability in ID

Practical implementation using single and


two supplies

FIGURE 4.30 (c) practical implementation using a single supply

(e) practical implementation using two


supplies.

Coupling of a Signal Source to the gate


using a capacitor CC1

FIGURE 4.30 (d) coupling of a signal source to the gate using a capacitor CC1

Biasing MOSFET using large drain to gate


feedback resistor RG

Biasing MOSFET using constant current


source

Implementation of constant current source


using Current Mirror

Das könnte Ihnen auch gefallen