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IRFS4229PbF
PDP SWITCH
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E PULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q G for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS min
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100C
TJ max
250
300
42
91
175
V
V
m:
A
C
G
G
D2Pak
Gate
Drain
Source
Description
This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Parameter
VGS
ID @ TC = 25C
Units
Gate-to-Source Voltage
30
45
ID @ TC = 100C
32
IDM
180
IRP @ TC = 100C
91
PD @TC = 25C
Power Dissipation
330
PD @TC = 100C
Power Dissipation
190
2.2
W/C
TJ
-40 to + 175
TSTG
300
10lb in (1.1N m)
Thermal Resistance
Parameter
RJC
RJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
0.45*
62
Units
* RJC (end of life) for D2Pak and TO-262 = 0.65C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150C and is accounted for by the physical wearout of the die attach medium.
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1
09/16/08
IRFS4229PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Min.
250
VDSS/TJ
RDS(on)
VGS(th)
210
42
48
3.0
-14
5.0
20
200
100
-100
nA
Forward Transconductance
Total Gate Charge
83
72
110
Gate-to-Drain Charge
Turn-On Delay Time
26
18
Rise Time
Turn-Off Delay Time
31
30
tst
Fall Time
Shoot Through Blocking Time
100
21
EPULSE
790
VGS(th)/TJ
IDSS
IGSS
gfs
Qg
Qgd
td(on)
tr
td(off)
tf
1390
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4560
390
100
290
LD
4.5
LS
Ciss
Coss
Crss
Coss eff.
mV/C
S
nC
ns
7.5
e
RG = 2.4
ns
See Fig. 22
VDD = 200V, VGS = 15V, RG= 4.7
L = 220nH, C= 0.3F, VGS = 15V
pF
nH
Conditions
BVDSS
VDS = 25V
= 1.0MHz,
VGS = 0V, VDS = 0V to 200V
Between lead,
and center of die contact
Avalanche Characteristics
Parameter
EAS
EAR
VDS(Avalanche)
IAS
d
Repetitive Avalanche Energy c
Repetitive Avalanche Voltagec
Avalanche Currentd
Single Pulse Avalanche Energy
Typ.
Max.
Units
130
mJ
300
33
mJ
26
Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current
ISM
VSD
trr
Qrr
(Body Diode)
Pulsed Source Current
c
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Conditions
MOSFET symbol
45
A
showing the
integral reverse
p-n junction diode.
TJ = 25C, IS = 26A, VGS = 0V
TJ = 25C, IF = 26A, VDD = 50V
180
1.3
190
840
290
1260
ns
nC
di/dt = 100A/s
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IRFS4229PbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
100
BOTTOM
10
5.5V
1
0.1
100
5.5V
10
10
BOTTOM
1
100
0.1
10
100
1000
100
TJ = 175C
10
TJ = 25C
0.1
VDS = 25V
60s PULSE WIDTH
0.01
4.0
5.0
6.0
7.0
ID = 26A
VGS = 10V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8.0
1600
1400
L = 220nH
C = 0.3F
100C
25C
1200
L = 220nH
C = Variable
100C
25C
1200
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
TOP
TOP
800
400
1000
800
600
400
200
150
160
170
180
190
200
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100
110
120
130
140
150
160
170
IRFS4229PbF
2000
1000
L = 220nH
C= 0.3F
C= 0.2F
C= 0.1F
1600
1200
800
400
100
TJ = 175C
10
TJ = 25C
VGS = 0V
0
25
50
75
100
125
0.1
150
0.2
Temperature (C)
C, Capacitance (pF)
20
5000
Ciss
4000
3000
Coss
2000
1000
Crss
1
1.0
1.2
ID= 26A
VDS = 160V
VDS = 100V
16
VDS = 40V
12
10
100
1000
1000
30
20
10
40
60
80
100
120
50
40
20
0.8
100
100sec
10sec
10
1
Tc = 25C
Tj = 175C
Single Pulse
0.1
25
50
75
100
125
150
175
0.6
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6000
0.4
10
100
1000
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0.40
()
RDS (on), Drain-to -Source On Resistance
IRFS4229PbF
ID = 26A
0.30
0.20
TJ = 125C
0.10
TJ = 25C
600
I D
7.4A
13A
BOTTOM 26A
TOP
500
400
300
200
100
0.00
0
5
10
25
100
125
150
175
5.0
140
4.5
120
75
4.0
50
ID = 250A
3.5
3.0
2.5
ton= 1s
Duty cycle = 0.25
Half Sine Wave
Square Pulse
100
2.0
80
60
40
20
1.5
25
50
75
25
50
75
100
125
150
175
TJ , Temperature ( C )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
Ri (C/W)
C
Ci= i/Ri
Ci= i/Ri
(sec)
0.080717 0.000052
0.209555 0.001021
0.159883 0.007276
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
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IRFS4229PbF
Driver Gate Drive
D.U.T
RG
***
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
D=
Period
P.W.
V DD
**
+
-
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple 5%
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET Power MOSFETs
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
VDS
tp
+
V
- DD
IAS
tp
0.01
I AS
Id
Vds
Vgs
L
DUT
1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
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IRFS4229PbF
PULSE A
RG
DRIVER
L
PULSE B
VCC
B
Ipulse
RG
tST
DUT
V DS
V GS
RG
RD
VDS
90%
D.U.T.
+
-V DD
VGS
Pulse Width 1 s
Duty Factor 0.1 %
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10%
VGS
td(on)
tr
t d(off)
tf
IRFS4229PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFS4229PbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25C, L = 0.37mH, RG = 25, IAS = 26A.
Pulse width 400s; duty cycle 2%.
R is measured at TJ of approximately 90C.
Half sine wave with duty cycle = 0.25, ton=1sec.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2008
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